公开(公告)号：US20230212735A1

公开(公告)日：2023-07-06

申请号：US17928709

申请日：2021-04-14

Applicant: Applied Materials, Inc.

Inventor： Nagabhushana NANJUNDAPPA ,  Kirankumar Neelasandra SAVANDAIAH ,  Srinivasa Rao YEDLA ,  Thomas BREZOCZKY ,  Bhaskar PRASAD

IPC: C23C14/54 ,  H01J37/32 ,  C23C14/34 ,  C23C14/50 ,  C23C14/56 ,  C23C14/35

CPC classification number: C23C14/541 ,  H01J37/32724 ,  H01J37/3244 ,  H01J37/32816 ,  C23C14/345 ,  C23C14/50 ,  C23C14/568 ,  C23C14/35 ,  H01J2237/002 ,  H01J2237/20235 ,  H01J2237/334 ,  H01J2237/2005 ,  H01J2237/20278 ,  H01J2237/2007 ,  H01J37/32899 ,  H01J37/32733

Abstract: Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

公开(公告)号：US11646198B2

公开(公告)日：2023-05-09

申请号：US17305938

申请日：2021-07-16

Applicant: Lam Research Corporation

Inventor： Jun Qian ,  Hu Kang ,  Adrien LaVoie ,  Seiji Matsuyama ,  Purushottam Kumar

IPC: C23C16/40 ,  H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/02

CPC classification number: H01L21/0228 ,  C23C16/02 ,  C23C16/45525 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274

Abstract: Methods for depositing films by atomic layer deposition using aminosilanes are provided.

公开(公告)号：US20190198301A1

公开(公告)日：2019-06-27

申请号：US16218931

申请日：2018-12-13

Applicant: Mattson Technology, Inc.

Inventor： Shawming Ma ,  Hua Chung ,  Michael X. Yang ,  Dixit V. Desai ,  Ryan M. Pakulski

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/687

CPC classification number: H01J37/32899 ,  H01J37/32119 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/3341 ,  H01J2237/3342 ,  H01J2237/3345 ,  H01L21/3065 ,  H01L21/68742

Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.

公开(公告)号：US20180261436A1

公开(公告)日：2018-09-13

申请号：US15453868

申请日：2017-03-08

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Yogananda SARODE VISHWANATH ,  Xue Yang CHANG

IPC: H01J37/32

CPC classification number: H01J37/32899 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32834 ,  H01J2237/334

Abstract: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.

公开(公告)号：US20180245217A1

公开(公告)日：2018-08-30

申请号：US15901145

申请日：2018-02-21

Applicant: Ascentool, Inc.

Inventor： George Xinsheng Guo

IPC: C23C16/458 ,  C23C16/04 ,  C23C16/46 ,  C23C16/513

CPC classification number: C23C16/4587 ,  C23C14/044 ,  C23C14/352 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45563 ,  C23C16/46 ,  C23C16/50 ,  C23C16/513 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/345

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

公开(公告)号：US10032872B2

公开(公告)日：2018-07-24

申请号：US14277508

申请日：2014-05-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki

IPC: H01L29/00 ,  H01L29/24 ,  H01L21/02 ,  H01L21/67 ,  H01J37/34 ,  C23C14/35 ,  C23C14/08 ,  C23C14/34 ,  C23C14/56 ,  H01J37/32 ,  H01L21/677 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/24 ,  C23C14/08 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/351 ,  C23C14/56 ,  C23C14/564 ,  C23C14/566 ,  H01J37/32724 ,  H01J37/32899 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/3455 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67748 ,  H01L29/66969 ,  H01L29/7869

Abstract: To manufacture a semiconductor device using an oxide semiconductor with high reliability and less variation in electrical characteristics, objects are to provide a method for manufacturing a semiconductor device with which an oxide semiconductor film with a fairly uniform thickness is formed, a manufacturing apparatus, and a method for manufacturing a semiconductor device with the manufacturing apparatus. In order to form an oxide semiconductor film with a fairly uniform thickness with use of a sputtering apparatus, an oxide semiconductor film the thickness uniformity of which is less than ±3%, preferably less than or equal to ±2% is formed by using a manufacturing apparatus in which a deposition chamber is set to have a reduced pressure atmosphere, preferably, to have a high degree of vacuum and power is adjusted to be applied uniformly to the entire surface of a substrate during film deposition.

公开(公告)号：US09972968B2

公开(公告)日：2018-05-15

申请号：US15133334

申请日：2016-04-20

Applicant: Trumpf Photonics, Inc.

Inventor： Qiang Zhang ,  Haiyan An ,  Hans Georg Treusch

IPC: H01S5/02 ,  H01S5/028 ,  H01S5/343 ,  H01S5/10 ,  H01J37/32 ,  C30B23/06 ,  C30B29/48 ,  C23C14/46

CPC classification number: H01S5/0282 ,  C23C14/021 ,  C23C14/46 ,  C23C14/568 ,  C30B23/02 ,  C30B23/066 ,  C30B29/48 ,  H01J37/32082 ,  H01J37/32743 ,  H01J37/32816 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/327 ,  H01J2237/335 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/10 ,  H01S5/34313 ,  H01S5/4025

Abstract: Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.

公开(公告)号：US09966239B2

公开(公告)日：2018-05-08

申请号：US15619967

申请日：2017-06-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Lee Chen ,  Zhiying Chen

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32935 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32899 ,  H01L21/3065 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other.

公开(公告)号：US09963785B2

公开(公告)日：2018-05-08

申请号：US14667692

申请日：2015-03-25

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Masayuki Asai ,  Koichi Honda ,  Mamoru Umemoto ,  Kazuyuki Okuda

IPC: C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01J37/32 ,  C23C16/52 ,  C23C16/08 ,  C23C16/40 ,  C23C16/509 ,  C23C16/54 ,  H01L21/033 ,  H01L21/3205

CPC classification number: C23C16/52 ,  C23C16/08 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/509 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/0337 ,  H01L21/32051 ,  H01L21/32053

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

公开(公告)号：US09960020B2

公开(公告)日：2018-05-01

申请号：US15328818

申请日：2015-08-05

Applicant: GRENZEBACH MASCHINENBAU GMBH

Inventor： Gerd Kleideiter ,  Thomas Krisch ,  Joerg Fiukowski ,  Olaf Gawer

IPC: C23C14/34 ,  H01J37/32 ,  H01J37/34 ,  C23C14/56 ,  C23C14/52

CPC classification number: H01J37/32834 ,  C23C14/352 ,  C23C14/52 ,  C23C14/562 ,  C23C14/564 ,  C23C14/568 ,  H01J37/32513 ,  H01J37/32761 ,  H01J37/32779 ,  H01J37/32788 ,  H01J37/32816 ,  H01J37/32889 ,  H01J37/32899 ,  H01J37/3405 ,  H01J37/3408

Abstract: Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1). Said apparatus has the following features: a) each of the sputtering segments (3) consists of a tank tub (12) inside which a conveying device (11) is located; the flange (6) of the tank is positioned in the immediate vicinity above the substrate plane (1); a cathode bearing block (5), along with targets (8) and gas inlet ducts (10), is located in the tank cover (4) in the immediate vicinity of the substrate together with splash guards (9); b) in the region of the substrate plane (1), the gas separation segments (2) are provided with a tunnel cover (14) that extends along the entire length of the gas separation segment (2); c) sputtering segments (3) and/or gas separation segments (2) are evacuated using one or more vacuum pumps (15), and the air pumped in said process is trapped in an air reservoir (25) having an adjustable volume.