公开(公告)号：US07119333B2

公开(公告)日：2006-10-10

申请号：US10904438

申请日：2004-11-10

Applicant: Steven B. Herschbein ,  Narender Rana ,  Chad Rue ,  Michael R. Sievers

Inventor： Steven B. Herschbein ,  Narender Rana ,  Chad Rue ,  Michael R. Sievers

IPC: G01N23/225 ,  H01J37/00

CPC classification number: H01J37/244 ,  H01J2237/2448 ,  H01J2237/3174

Abstract: Detection of weak ion currents scattered from a sample by an ion beam is improved by the use of a multiplier system in which a conversion electrode converts incident ions to a number of secondary electrons multiplied by a multiplication factor, the secondary electrons being attracted to an electron detector by an appropriate bias. In one version, the detector is a two stage system, in which the secondary electrons strike a scintillator that emits photons that are detected in a photon detector such as a photomultiplier or a CCD.

Abstract translation: 通过使用其中转换电极将入射离子转换成多个次级电子乘以乘法因子的乘法系统来提高通过离子束从样品散射的弱离子电流的检测，二次电子被吸引到电子 检测器通过适当的偏差。 在一个版本中，检测器是两级系统，其中二次电子撞击发射在诸如光电倍增管或CCD的光子检测器中检测到的光子的闪烁体。

公开(公告)号：US07060995B2

公开(公告)日：2006-06-13

申请号：US10657801

申请日：2003-09-08

Applicant: Camillo Bresolin ,  Valter Soncini ,  Andrea Riva

Inventor： Camillo Bresolin ,  Valter Soncini ,  Andrea Riva

IPC: H01J37/00

CPC classification number: H01J37/3171 ,  H01J37/18 ,  H01J2237/022

Abstract: An ion-implantation machine has an implantation chamber with a vent inlet; a vacuum pump is connected to the implantation chamber through a vacuum valve. A pipe connects the vent inlet of the implantation chamber to a source of a fluid containing oxygen. The fluid containing oxygen is preferably environmental air. A flow-rate control valve is arranged on the pipe and is activated only after closing the vacuum valve.

Abstract translation: 离子注入机具有具有通气口的注入室; 真空泵通过真空阀与注入室连接。 管将注入室的排气入口连接到含有氧气的流体源。 含氧的流体优选是环境空气。 流量控制阀配置在管道上，仅在关闭真空阀后启动。

公开(公告)号：US07023003B2

公开(公告)日：2006-04-04

申请号：US10804890

申请日：2004-03-18

Applicant: Chen-Chung Li ,  Jui-Chun Weng ,  Chi-Chieh Wang ,  Tai-Kun Kao

Inventor： Chen-Chung Li ,  Jui-Chun Weng ,  Chi-Chieh Wang ,  Tai-Kun Kao

IPC: H01J37/00 ,  H01J37/08 ,  H01J37/20

CPC classification number: H01J37/302 ,  H01J37/3171

Abstract: An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.

Abstract translation: 提供具有离子源的离子注入机; 具有固定半径R am的AMU分析磁体; 离子提取电压源; 用于监测植入参数的通信接口; 以及具有数据日志的设备服务器。 离子注入机还具有算术处理器，该算术处理器能够确定注入目标晶片的离子的圆形路径的实时估计半径R e E。 使用离子注入机的方法在被注入到目标晶片中的多个离子中的每一个的AMU上提供互锁。 该方法具有实时确定离子注入机是否将期望的离子注入目标晶片的步骤。 此外，该方法确定R＆gt; am和＆lt;＆gt;＆lt; / SUB之间的偏移的绝对值是否超过预定的半径公差等级L，并且如果超过L则相应地调整注入机。

公开(公告)号：US07002149B2

公开(公告)日：2006-02-21

申请号：US10496571

申请日：2002-11-25

Applicant: Hidemi Shigekawa ,  Osamu Takeuchi ,  Mikio Yamashita ,  Ryuji Morita

Inventor： Hidemi Shigekawa ,  Osamu Takeuchi ,  Mikio Yamashita ,  Ryuji Morita

IPC: H01J37/00

CPC classification number: G01J3/433 ,  G01J3/2889 ,  G01J2001/4242 ,  G01N21/6408 ,  G01N21/6458 ,  G01N2021/6415 ,  G01Q30/02 ,  G01Q60/12 ,  Y10S977/85

Abstract: Disclosed is a measuring apparatus for a physical phenomenon by photoexcitation, in particular a delay time modulated and time-resolved, scanning probe microscope apparatus providing an ultimate resolution both temporal and spatial. The apparatus comprises an ultrashort laser pulse generator (2); a delay time modulating circuit (6) which splits an ultrashort laser pulse (3) produced by the ultrashort laser pulse generator (2) into two and which also modulates a delay time td between the two ultrashort laser pulses (4 and 5) with a frequency (ω); a scanning probe microscope (7); and a lock-in detection unit (8) which performs lock-in detection with the delay time modulation frequency (ω) of a probe signal (11) from the scanning probe microscope (7). It can detect the delay time dependency of the probe signal (11) as its differential coefficient to the delay time, with no substantial influence from fluctuations in the intensity of ultrashort laser pulses (3) while preventing the probe apex (19) from thermal expansion and shrinkage by repeated irradiation with ultrashort laser pulses (3). A photoexcited physical phenomenon dependent on a delay time between ultrashort laser pulses can thus be measured at a temporal resolution in the order of femtoseconds and at a spatial resolution in the order of angstroms.

Abstract translation: 公开了一种通过光激发的物理现象的测量装置，特别是延迟时间调制和时间分辨的扫描探针显微镜装置，其提供了时间和空间上的最终分辨率。 该装置包括超短激光脉冲发生器（2）; 延迟时间调制电路（6），其将由超短激光脉冲发生器（2）产生的超短激光脉冲（3）分成两个，并且还调制两个超短激光器之间的延迟时间t 具有频率（ω）的脉冲（4和5）; 扫描探针显微镜（7）; 以及锁定检测单元（8），其利用来自扫描探针显微镜（7）的探测信号（11）的延迟时间调制频率（ω）执行锁定检测。 探测信号（11）的延迟时间依赖性可以作为其延迟时间的微分系数，而不会因为超短激光脉冲（3）的强度的波动带来实质的影响，同时防止探头顶点（19）的热膨胀 以及通过用超短激光脉冲（3）重复照射来收缩。 因此，依赖于超短激光脉冲之间的延迟时间的光激发物理现象可以以飞秒级的时间分辨率和以埃的空间分辨率测量。

公开(公告)号：US20050241767A1

公开(公告)日：2005-11-03

申请号：US10836516

申请日：2004-04-30

Applicant: David Ferris ,  Aseem Srivastava ,  Maw Tun

Inventor： David Ferris ,  Aseem Srivastava ,  Maw Tun

IPC: C23F1/00 ,  H01J37/00 ,  H01J37/32

CPC classification number: H01J37/32623 ,  H01J37/3244 ,  H01J37/32633

Abstract: A plasma processing system includes at least one multi-piece baffle plate. The multi-piece baffle plate assembly generally comprises at least one annular shaped ring portion having an opening and an insert portion dimensioned to sit within the opening. The individual pieces can be formed of a ceramic material. The effects caused by thermal gradients in the plate during plasma processing are minimized.

Abstract translation: 等离子体处理系统包括至少一个多件挡板。 多件式挡板组件通常包括至少一个环形环部分，其具有开口和尺寸适于位于开口内的插入部分。 各个片可以由陶瓷材料形成。 在等离子体处理期间由板中的热梯度引起的影响被最小化。

公开(公告)号：US06960772B1

公开(公告)日：2005-11-01

申请号：US10709961

申请日：2004-06-09

Applicant: Gary J. Johnson ,  David J. Pinckney

Inventor： Gary J. Johnson ,  David J. Pinckney

IPC: H01J37/00

CPC classification number: H01J37/20 ,  H01J2237/2007 ,  H01J2237/30438 ,  H01J2237/31788

Abstract: A carrier for the masks used in Electron Projection Lithography, or other workpieces used in nanotechnology fields, comprises a rectangular frame having a set of four electrostatic chucks in the top surface for holding the mask above a central aperture that has an electron absorber on the bottom for suppressing backscattering; the frame being supported by a bottom carrier that grips the frame with a set of flexures flexible in the z-direction, stiff in an azimuthal direction and flexible in a radial direction.

Abstract translation: 用于电子投影平版印刷术中的掩模的载体或纳米技术领域中使用的其他工件包括在顶表面中具有一组四个静电卡盘的矩形框架，用于将掩模保持在位于底部的电子吸收体的中心孔上方 用于抑制后向散射; 框架由底部托架支撑，该底托架通过在z方向上具有柔性的一组挠曲来夹持框架，在方位角方向上是刚性的并且在径向上是柔性的。

公开(公告)号：US06900444B2

公开(公告)日：2005-05-31

申请号：US10869368

申请日：2004-06-16

Applicant: Joseph Ferrara ,  Robert John Mitchell

Inventor： Joseph Ferrara ,  Robert John Mitchell

IPC: G01J1/00 ,  G01N21/00 ,  H01J37/00 ,  H01J37/20 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/20207 ,  H01J2237/20221 ,  H01J2237/24528 ,  H01L21/68764 ,  H01L21/68771

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and overlaying an opening in the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having a rotating shaft that protrudes through the first member and an axis of rotation offset from an axis of rotation of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member that extends into the implantation chamber, the third member including a rotatable drive supporting the workpiece having an axis of rotation offset from the axis of rotation of the first rotation member. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.

Abstract translation: 离子束注入机包括用于产生沿着束线移动的离子束的离子束源和注入室，其中工件被定位成与离子束相交，用于通过离子束离子注入工件的表面。 离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构。 工件支撑结构包括可旋转地联接到植入室并覆盖植入室中的开口的第一旋转构件。 工件支撑结构还包括第二旋转构件，其可旋转地联接到第一旋转构件并且具有从第一构件突出的旋转轴和从第一旋转构件的旋转轴线偏移的旋转轴。 工件支撑结构还包括固定地附接到第二旋转构件的第三构件，其延伸到注入室中，第三构件包括支撑工件的可旋转驱动装置，其具有偏离第一旋转构件的旋转轴线的旋转轴线。 第一旋转构件，第二旋转构件和第三旋转构件的可旋转驱动器旋转以沿着用于注入植入表面的移动路径移动工件，其中在撞击植入之前离子束移动通过注入室的距离 工件表面是恒定的。

公开(公告)号：US06881966B2

公开(公告)日：2005-04-19

申请号：US10461702

申请日：2003-06-13

Applicant: Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

Inventor： Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

IPC: H01J27/18 ,  H01J37/00 ,  H01J37/05 ,  H01J37/147 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

Abstract: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.

Abstract translation: 公开了用于离子束的磁偏转器，并且包括第一和第二线圈。 线圈分别位于梁的上方和下方，并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场，其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面，公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性，并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。

公开(公告)号：US06849857B2

公开(公告)日：2005-02-01

申请号：US10471610

申请日：2002-03-22

Applicant: Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

Inventor： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

IPC: H05H1/46 ,  B01J19/08 ,  C23C14/32 ,  H01J37/08 ,  H01J37/30 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/00

CPC classification number: H01J37/32137 ,  H01J37/08 ,  H01J37/30 ,  H01J37/32357 ,  H01J2237/0827

Abstract: A beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), first electrode (4) disposed in the vacuum chamber (3), and a second electrode (5) disposed upstream of the first electrode (4) in the vacuum chamber (3). The beam processing apparatus further comprises a voltage applying unit for applying a variable voltage between the first electrode (4) and the second electrode (5) to alternately extract positive ions (6) and negative ions from the plasma generated by the plasma generator.

Abstract translation: 光束处理装置包括用于保持工件（X）的工件保持器（20），用于在真空室（3）中产生等离子体的等离子体发生器，设置在真空室（3）中的第一电极（4） 第二电极（5），设置在真空室（3）中的第一电极（4）的上游。 光束处理装置还包括用于在第一电极（4）和第二电极（5）之间施加可变电压以从等离子体发生器产生的等离子体中交替地提取正离子（6）和负离子的电压施加单元。

公开(公告)号：US06844560B2

公开(公告)日：2005-01-18

申请号：US10218223

申请日：2002-08-13

Applicant: Marco Wieland ,  Bert Jan Kampherbeek ,  Pieter Kruit

Inventor： Marco Wieland ,  Bert Jan Kampherbeek ,  Pieter Kruit

IPC: G03F7/20 ,  H01J37/073 ,  H01J37/317 ,  H01J37/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/70375 ,  H01J37/073 ,  H01J37/3177 ,  H01J2237/028 ,  H01J2237/31779 ,  H01J2237/31796

Abstract: A lithography system comprising a converter element (7) for receiving light and converting said light in a plurality of electron beams (15) to be directed towards and focused on a substrate (10) to be processed, said plurality of electron beams (15) being used to define a pattern in a resist layer (20) on said substrate (10), wherein said lithography system is provided with a protective foil with holes at the positions of the electron beams (23) being arranged to protect, in use, said converter element (7) from contamination with material from the resist layer (21).

Abstract translation: 一种光刻系统，包括用于接收光的转换元件（7），并将多个电子束（15）中的所述光转换成指向并聚焦在待处理的基板（10）上，所述多个电子束（15） 用于在所述基板（10）上的抗蚀剂层（20）中限定图案，其中所述光刻系统设置有在电子束（23）的位置处具有孔的保护箔， 所述转换器元件（7）不受来自抗蚀剂层（21）的材料的污染。