公开(公告)号：US6150275A

公开(公告)日：2000-11-21

申请号：US250519

申请日：1999-02-16

Applicant: Dong-Il Cho ,  Sangwoo Lee ,  Sangjun Park

Inventor： Dong-Il Cho ,  Sangwoo Lee ,  Sangjun Park

IPC: C23F1/00 ,  B81C1/00 ,  C30B33/00 ,  H01L21/311 ,  H01L21/302

CPC classification number: C30B29/06 ,  B81C1/00801 ,  C30B33/00 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014

Abstract: Disclosed is a micromechanical system fabrication method using (111) single crystalline silicon as a silicon substrate and employing a reactive ion etching process in order to pattern a microstructure that will be separated from the silicon substrate and a selective release-etching process utilizing an aqueous alkaline solution in order to separate the microstructure from the silicon substrate. According to the micromechanical system fabrication method of the present invention, the side surfaces of microstructures can be formed to be vertical by employing the RIE technique. Furthermore, the microstructures can be readily separated from the silicon substrate by employing the selective release-etching technique using slow etching {111} planes as the etch stop in an aqueous alkaline solution. In addition, etched depths can be adjusted during the RIE step, thereby adjusting the thickness of the microstructure and the spacing between the microstructure and the silicon substrate.

Abstract translation: 公开了一种使用（111）单晶硅作为硅衬底并采用反应离子蚀刻工艺以便将从硅衬底分离的微结构图案和利用碱性水溶液的选择性剥离蚀刻工艺的微机械系统制造方法 溶液以将微结构与硅衬底分离。 根据本发明的微机械系统制造方法，通过采用RIE技术，可以将微结构的侧面形成为垂直的。 此外，通过使用选择性剥离蚀刻技术，通过使用慢蚀刻{111}晶面作为碱性水溶液中的蚀刻停止，微结构可以容易地与硅衬底分离。 此外，可以在RIE步骤期间调整蚀刻深度，从而调整微结构的厚度和微结构与硅衬底之间的间隔。

公开(公告)号：US5920013A

公开(公告)日：1999-07-06

申请号：US797376

申请日：1997-02-07

Applicant: William John Boardman ,  John Crumlin ,  John Ralph Lindsey ,  Paul Thomas Carson ,  Judd Steven Carper ,  John Ames ,  Paul Elwin Stevenson

Inventor： William John Boardman ,  John Crumlin ,  John Ralph Lindsey ,  Paul Thomas Carson ,  Judd Steven Carper ,  John Ames ,  Paul Elwin Stevenson

IPC: B81C1/00 ,  G01P15/125

CPC classification number: B81C1/00801 ,  B81C2201/0133 ,  B81C2201/014 ,  B81C2203/031

Abstract: A protective coating is utilized to protect the silicon during a wet chemical etch step in the process of making a micromachine, thereby preventing the formation of etched holes or pits in the micromachine. In another embodiment, silicon sacrificial pedestals are used to eliminate or greatly reduces the electrical potential difference between metal on the glass substrate and the silicon, thereby eliminating arcing and the resulting damage to silicon and metal. These pedestals may be removed after the anodic bond.

Abstract translation: 在制造微机械过程中的湿化学蚀刻步骤期间，使用保护涂层来保护硅，从而防止在微机械中形成蚀刻的孔或凹坑。 在另一个实施例中，硅牺牲基座用于消除或大大降低玻璃基板和硅之间的金属之间的电位差，由此消除电弧和由此导致的对硅和金属的损坏。 这些基座可能在阳极结合之后被去除。

公开(公告)号：US5589083A

公开(公告)日：1996-12-31

申请号：US346205

申请日：1994-11-22

Applicant: Kun-Young Ahn ,  Kyung-Ho Park ,  Kee-Soo Nam ,  Sang-Won Kang

Inventor： Kun-Young Ahn ,  Kyung-Ho Park ,  Kee-Soo Nam ,  Sang-Won Kang

IPC: B41J2/135 ,  B44C1/22 ,  B44C3/00 ,  B81C1/00 ,  G02B1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L29/84 ,  H01L21/00

CPC classification number: B44C1/227 ,  B44C3/005 ,  B81C1/00626 ,  H01L21/2007 ,  B81B2201/047 ,  B81B2201/052 ,  B81B2203/0353 ,  B81B2203/0361 ,  B81C2201/0133 ,  B81C2201/019 ,  Y10S438/973

Abstract: The present invention relates to a method of manufacturing microstructure by the anisotropic etching and bonding of substrates so as to manufacture mechanically functioning micro-structures in various forms by uniting the same or different substrate bonding technique and selective anisotropic etching technique. This invention manufactures a pyramidal optical divider or an optical divider with a pyramidal structure located on a quadrilateral pillar by bonding one substrate on a substrate different in the direction of crystallization and anisotropically etching them thereafter. This invention manufactures variously shaped nozzles by bonding those substrates crystallized in a different direction and anisotropically etching them so that substrates bonded by one photograph transferring process may form different etching holes. This invention manufactures a diaphragm having a uniform thickness and a wide area by bonding two substrates different in the direction of crystallization or in the concentration of an impurity, removing a substrate of prescribed concentration and anisotropically etching only one substrate of the remaining substrates.

Abstract translation: 本发明涉及通过各向异性蚀刻和基板的接合来制造微结构的方法，以便通过结合相同或不同的基板接合技术和选择性各向异性蚀刻技术来制造各种形式的机械功能的微结构。 本发明通过将一个衬底粘结在不同于结晶方向的衬底上并以其各向异性蚀刻的方式制造棱锥形光学分配器或具有位于四边形柱上的锥体结构的光学分配器。 本发明通过将在不同方向上结晶的基片结合在一起，通过各向异性蚀刻它们来制造各种形状的喷嘴，使得通过一次照片转印工艺粘合的基板可以形成不同的蚀刻孔。 本发明通过粘合两个不同结晶方向的基板或杂质浓度，除去规定浓度的基板，并且各向异性蚀刻剩余基板的一个基板，制造具有均匀厚度和宽面积的隔膜。

公开(公告)号：US12098069B2

公开(公告)日：2024-09-24

申请号：US17540750

申请日：2021-12-02

Applicant: Sangwoo Lee

Inventor： Sangwoo Lee

IPC: B81C1/00 ,  A61B5/293 ,  B81B1/00 ,  A61N1/05

CPC classification number: B81C1/00111 ,  A61B5/293 ,  B81B1/008 ,  A61B2562/125 ,  A61N1/0529 ,  B81B2201/055 ,  B81B2203/0361 ,  B81B2203/04 ,  B81C2201/0133

Abstract: A method of manufacturing a plurality of neural probes from a silicon wafer in which after neural probes are formed on one side of a silicon wafer, the other side of the silicon wafter is subject to a dicing process that separates and adjusts the thickness of the neural probes.

公开(公告)号：US12042770B2

公开(公告)日：2024-07-23

申请号：US17520713

申请日：2021-11-07

Applicant: International Business Machines Corporation

Inventor： Joshua T. Smith ,  Stacey Gifford ,  Sung-Cheol Kim ,  Benjamin Wunsch

IPC: B01D71/02 ,  B01D29/00 ,  B01D29/44 ,  B01L3/00 ,  B81C1/00

CPC classification number: B01D71/0213 ,  B01D29/0093 ,  B01D29/44 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/565 ,  B81C1/00119 ,  B01L2300/0861 ,  B01L2300/0896 ,  B01L2300/12 ,  B01L2400/0487 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133

Abstract: An exemplary method includes forming a sacrificial layer along sidewalls of an array of trenches that are indented into a substrate, depositing a fill layer over the sacrificial layer, and then creating an array of gaps between the fill layer and the substrate by removing the sacrificial layer along the sidewalls of the trenches, while maintaining a structural connection between the substrate and the fill layer at the floors of the trenches. The method further includes covering the substrate, the fill layer, and the gaps with a cap layer that seal fluid-tight against the substrate and the fill layer. The method further includes indenting a first reservoir and a second reservoir through the cap layer, and into the substrate and the fill layer, across the lengths of the array of gaps, so that the array of gaps connects the first reservoir in fluid communication with the second reservoir.

公开(公告)号：US20240092634A1

公开(公告)日：2024-03-21

申请号：US17766770

申请日：2020-08-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daiki SUZUKI ,  Takahiro MATSUMOTO ,  Tomoyuki IDE ,  Mikito TAKAHASHI

IPC: B81C1/00 ,  G02B26/08

CPC classification number: B81C1/00142 ,  B81C1/00952 ,  G02B26/0833 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133

Abstract: A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer, a device layer, and an intermediate layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer, the device layer, and the intermediate layer from the wafer and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a part of the intermediate layer is removed from the wafer by anisotropic etching.

公开(公告)号：US20240051819A1

公开(公告)日：2024-02-15

申请号：US18073472

申请日：2022-12-01

Applicant: AAC ACOUSTIC TECHNOLOGIES (SHENZHEN) CO., LTD.

Inventor： Ping-He Chang ,  Kahkeen Lai

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81C2201/0105 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0172

Abstract: A method for manufacturing a MEMS device and the MEMS device are provided. The method includes: depositing a film on at least a part of a surface of a sacrificial layer, defining at least one through hole in the thin film by machining, removing at least a part of a material covered by the thin film in the sacrificial layer, discharging the part of the material removed from the sacrificial layer from the at least one through hole to define a cavity in the sacrificial layer, and depositing a sealing layer on a surface of the thin film facing away from the sacrificial layer to seal the at least one through hole. Compared with the manufacturing method in the related art, the manufacturing method of the disclosure only requires to deposit one layer of thin film, shorten the production period, and has reliable on-site sealing capability.

公开(公告)号：US20230416080A1

公开(公告)日：2023-12-28

申请号：US18250256

申请日：2021-10-21

Applicant: CYTOSURGE AG

Inventor： Edin SARAJLIC

IPC: B81C1/00 ,  G01Q70/12 ,  G01Q70/16

CPC classification number: B81C1/00111 ,  G01Q70/12 ,  G01Q70/16 ,  B81C2201/0133

Abstract: A method of manufacturing a MEMS device comprising a main body and a protrusion. To provide a generic method of manufacturing a protrusion with reduced vulnerability, the method includes creating a recess in a wafer substrate, said recess having an upper recess section and a lower recess section. The upper recess section is created using anisotropic etching and the lower recess section is formed using corner lithography followed by directional etching. Finally, a filler material is introduced in the recess and at least part of the wafer substrate material is removed so as to expose the filler material introduced in the recess. Additionally, the method allows for the batch-wise production of protrusions having oblique ends.

公开(公告)号：US20230239628A1

公开(公告)日：2023-07-27

申请号：US17830448

申请日：2022-06-02

Applicant: Fortemedia, Inc.

Inventor： Li-Jen CHEN ,  Yu-Xuan XU ,  Yu-Ting CHENG ,  Shih-Chin GONG

IPC: H04R9/06 ,  B81C1/00 ,  H04R7/04 ,  H04R7/16 ,  H04R1/02 ,  H04R31/00 ,  H04R9/02 ,  H04R9/04

CPC classification number: H04R9/06 ,  B81C1/00587 ,  H04R1/025 ,  H04R7/04 ,  H04R7/16 ,  H04R9/025 ,  H04R9/047 ,  H04R31/003 ,  H04R31/006 ,  B81C2201/014 ,  B81C2201/0132 ,  B81C2201/0133 ,  H04R2307/025

Abstract: A package structure of a micro speaker is provided. The package structure includes a substrate, a diaphragm, a coil, an etch stop layer, a carrier board, a permanent magnetic element, and package lid. The substrate has a hollow chamber. The diaphragm is suspended over the hollow chamber. The coil is embedded in the diaphragm. The etch stop layer is positioned below the coil and overlaps the coil in the direction that is perpendicular to the top surface of the diaphragm. The etch stop layer is made of a metal material. The carrier board is disposed on the bottom surface of the substrate. The permanent magnetic element is disposed on the carrier board and in the hollow chamber. The package lid is wrapped around the substrate and the diaphragm, and has a lid opening that exposes a portion of the top surface of the diaphragm.

公开(公告)号：US20230213389A1

公开(公告)日：2023-07-06

申请号：US17996125

申请日：2021-04-14

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Geoffroy DUMONT ,  Jean-Jacques YON

IPC: G01J5/04 ,  G01J5/10 ,  G01J5/02 ,  B81B7/00 ,  B81C1/00

CPC classification number: G01J5/045 ,  G01J5/10 ,  G01J5/046 ,  G01J5/0225 ,  B81B7/0051 ,  B81C1/00325 ,  G01J2005/106 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81C2201/0109 ,  B81C2201/0133

Abstract: The invention relates to a method for fabricating a detection device, comprising the following steps: producing thermal detectors and an encapsulating structure by way of mineral sacrificial layers; partially removing the mineral sacrificial layers, by wet chemical etching in an acid medium, so as to free the thermal detectors and to obtain a peripheral wall, and to free an upper portion of the encapsulating thin layer; the peripheral wall then having a lateral recess resulting in a vertical enlargement of the cavity, between the readout substrate and the upper portion, this lateral recess defining an intermediate area; producing reinforcing pillars, arranged in the intermediate area around the matrix-array of thermal detectors.