System and method of correcting errors in SEM-measurements
    101.
    发明授权
    System and method of correcting errors in SEM-measurements 有权
    校正SEM测量误差的系统和方法

    公开(公告)号:US07930654B2

    公开(公告)日:2011-04-19

    申请号:US12112835

    申请日:2008-04-30

    Abstract: Embodiments of the invention relate to correcting errors in scanning electron measurements during measuring structural dimensions of an integrated circuit for optical proximity correction by extracting feature edges of a test pattern within an image, calculating at least one scaling error of the image by comparing the extracted feature edges of assist structures with a layout pattern, modifying feature edges of test structures within the test pattern by incorporating the at least one scaling error so as to at least partially compensate the scaling errors, and verifying a model for optical proximity corrections and/or model input data by using the modified feature edges of the test structures.

    Abstract translation: 本发明的实施例涉及通过提取图像内的测试图案的特征边缘来测量用于光学邻近校正的集成电路的结构尺寸来校正扫描电子测量中的误差,通过将所提取的特征进行比较来计算图像的至少一个缩放误差 具有布局图案的辅助结构的边缘,通过结合至少一个缩放误差来修改测试图案内的测试结构的特征边缘,以便至少部分地补偿缩放误差,以及验证光学邻近校正和/或模型的模型 通过使用测试结构的修改后的特征边缘输入数据。

    Method and system for ultrafast photoelectron microscope
    103.
    发明授权
    Method and system for ultrafast photoelectron microscope 有权
    超快光电子显微镜的方法和系统

    公开(公告)号:US07915583B2

    公开(公告)日:2011-03-29

    申请号:US12234567

    申请日:2008-09-19

    Abstract: An ultrafast system (and methods) for characterizing one or more samples. The system includes a stage assembly, which has a sample to be characterized. The system has a laser source that is capable of emitting an optical pulse of less than 1 ps in duration. The system has a cathode coupled to the laser source. In a specific embodiment, the cathode is capable of emitting an electron pulse less than 1 ps in duration. The system has an electron lens assembly adapted to focus the electron pulse onto the sample disposed on the stage. The system has a detector adapted to capture one or more electrons passing through the sample. The one or more electrons passing through the sample is representative of the structure of the sample. The detector provides a signal (e.g., data signal) associated with the one or more electrons passing through the sample that represents the structure of the sample. The system has a processor coupled to the detector. The processor is adapted to process the data signal associated with the one or more electrons passing through the sample to output information associated with the structure of the sample. The system has an output device coupled to the processor. The output device is adapted to output the information associated with the structure of the sample.

    Abstract translation: 用于表征一个或多个样品的超快系统(和方法)。 该系统包括具有要表征的样品的载物台组件。 该系统具有能够发射持续时间小于1ps的光脉冲的激光源。 该系统具有耦合到激光源的阴极。 在具体实施例中,阴极能够发射持续时间小于1ps的电子脉冲。 该系统具有适于将电子脉冲聚焦到设置在载物台上的样品上的电子透镜组件。 该系统具有适于捕获穿过样品的一个或多个电子的检测器。 通过样品的一个或多个电子代表样品的结构。 检测器提供与通过样品的一个或多个电子相关联的信号(例如,数据信号),其表示样品的结构。 该系统具有耦合到检测器的处理器。 处理器适于处理与通过样本的一个或多个电子相关联的数据信号,以输出与样本的结构相关联的信息。 该系统具有耦合到处理器的输出设备。 输出设备适于输出与样本结构相关联的信息。

    METHOD FOR ADJUSTING IMAGING MAGNIFICATION AND CHARGED PARTICLE BEAM APPARATUS
    104.
    发明申请
    METHOD FOR ADJUSTING IMAGING MAGNIFICATION AND CHARGED PARTICLE BEAM APPARATUS 失效
    调整成像放大和充电颗粒光束装置的方法

    公开(公告)号:US20110042568A1

    公开(公告)日:2011-02-24

    申请号:US12917703

    申请日:2010-11-02

    Abstract: There is provided a method for setting a suitable imaging magnification for each of a plurality of measurement places in a charged particle beam apparatus which images a semiconductor pattern.For a given measuring point coordinate, a line segment or a vertex representing a change in concavity and convexity near the measuring point coordinate is searched, and an imaging magnification is set so that coordinates on a sample corresponding to both ends which gives a length that serves as a reference falls in a field of view of the charged particle beam apparatus by letting a minimum distance be the reference, of distances between line segments representing a change in concavity and convexity from the measuring point coordinate or a distance between neighboring vertexes.

    Abstract translation: 提供了一种用于为对半导体图案进行成像的带电粒子束装置中的多个测量位置中的每一个设置合适的成像倍率的方法。 对于给定的测量点坐标,搜索表示测量点坐标附近的凹凸的变化的线段或顶点,并且设置成像倍率,使得对应于给出服务的长度的两端的样本上的坐标 作为参考,通过使最小距离作为参考,在距离表示距离测量点坐标的凹凸变化的线段之间的距离或相邻顶点之间的距离处落在带电粒子束装置的视野中。

    SYSTEM AND METHOD FOR MATERIAL ANALYSYS OF A MICROSCOPIC ELEMENT
    105.
    发明申请
    SYSTEM AND METHOD FOR MATERIAL ANALYSYS OF A MICROSCOPIC ELEMENT 有权
    微观元素材料分析系统与方法

    公开(公告)号:US20110024622A1

    公开(公告)日:2011-02-03

    申请号:US12864215

    申请日:2009-01-22

    Applicant: Dmitry Shur

    Inventor: Dmitry Shur

    Abstract: A system and a method for material analysis of a microscopic element, the method comprising: illuminating an area that includes at least a portion of the microscopic element by a charged particle beam, detecting particles that are generated in the area in response to the charged particle beam and analyzing the detected particles to provide an indication about a material characteristic of the microscopic element, wherein the operation of illumination is implemented as a sequence of displacement compensation determination periods, each provided between consecutive material analysis periods, the method further comprising evaluating during a displacement compensation determination period, a displacement of the charged particle beam with respect to the microscopic element and during a consecutive material analysis period applying a spatial adjustment measure as required, thereby compensating for a drift of the charged particle beam.

    Abstract translation: 一种用于微观元素的材料分析的系统和方法,所述方法包括:通过带电粒子束照射包括所述微观元素的至少一部分的区域,检测在所述区域中响应于所述带电粒子产生的颗粒 并且分析检测到的颗粒以提供关于微观元件的材料特性的指示,其中照明的操作被实现为位移补偿确定周期的序列,每个位移补偿确定周期在连续的材料分析周期之间提供,该方法还包括在 位移补偿确定周期,相对于微观元件的带电粒子束的位移和在连续的材料分析周期期间根据需要应用空间调整度量,从而补偿带电粒子束的漂移。

    Charged particle beam irradiation system
    106.
    发明授权
    Charged particle beam irradiation system 有权
    带电粒子束照射系统

    公开(公告)号:US07851756B2

    公开(公告)日:2010-12-14

    申请号:US12182709

    申请日:2008-07-30

    Abstract: It is to prevent an image drift from occurring caused by a specimen being charged when observing the specimen including an insulating material.A first scan is performed in a predetermined direction on scanning line and in a predetermined sequential direction of scanning lines and a second scan is performed in a scanning direction different from the predetermined scanning direction and in a sequential direction different from the predetermined sequential direction. An image may be created by repeating the process of executing the second scan after executing the first scan and by requiring the arithmetic average of the frames obtained by the second scans. An image may be created by averaging arithmetically at least one frame obtained by the first scan and at least one frame obtained by the second scan.

    Abstract translation: 这是为了防止在观察包括绝缘材料的试样时由试样充电引起的图像漂移。 在扫描线和扫描线的预定顺序方向上沿预定方向执行第一扫描,并且在与预定扫描方向不同的扫描方向上和沿与预定顺序方向不同的顺序方向上执行第二扫描。 可以通过在执行第一次扫描之后重​​复执行第二扫描的处理并且要求通过第二扫描获得的帧的算术平均来创建图像。 可以通过对由第一扫描获得的至少一帧和通过第二扫描获得的至少一帧进行算术平均来创建图像。

    Charged particle beam apparatus and methods for capturing images using the same
    108.
    发明授权
    Charged particle beam apparatus and methods for capturing images using the same 有权
    带电粒子束装置及使用该装置拍摄图像的方法

    公开(公告)号:US07807980B2

    公开(公告)日:2010-10-05

    申请号:US11647348

    申请日:2006-12-29

    CPC classification number: H01J37/263 H01J37/265 H01J37/28 H01J2237/2826

    Abstract: The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

    Abstract translation: 本发明提供一种用于测量捕获用于测量的图像的半导体装置等的微尺寸(CD值)的带电粒子束装置。 对于本发明,使用用于校准的样品,其上在视场中排列有通过晶体各向异性蚀刻技术产生的表面上具有已知角度的多个多面体结构物体。 基于每个多面体结构物体的图像上的几何变形来计算视野内的每个位置处的束着陆角。 用于均衡视场内每个位置的束着陆角的光束控制参数被预先注册。 当进行尺寸测量时,根据待测图案的位置在观察区域中应用登记的光束控制参数。 因此,本发明提供了减少相对于具有相同束着陆角的样品的电子束着角的变化引起的CD值的变化的方法,以及用于减少由电子差异引起的仪器误差的方法 设备之间的束着陆角度。

    METHOD FOR DETERMINING DISTORTIONS IN A PARTICLE-OPTICAL APPARATUS
    109.
    发明申请
    METHOD FOR DETERMINING DISTORTIONS IN A PARTICLE-OPTICAL APPARATUS 有权
    用于确定颗粒光学装置中的失真的方法

    公开(公告)号:US20100246993A1

    公开(公告)日:2010-09-30

    申请号:US12636592

    申请日:2009-12-11

    Abstract: The invention relates to a method of determining the distortions in the projection system of a TEM, and a method of correcting for these aberrations. The aberrations are determined by collecting a large number of images of a sample, the sample slightly displaced between each acquisition of an image. On the images sub-fields (303, 304-i) showing identical parts of the sample are compared. These sub-fields (303, 304-i) will show small differences, corresponding to differential aberrations. In this way the differential aberrations in a large number of points can determined, after which the aberrations for each point can be determined by integration. By now correcting the position of each detected pixel in an image to be displayed, the displayed image has much reduced aberrations. An advantage of the method according to the invention is that no highly accurate steps of the sample are needed, nor is a sample with known geometry needed.

    Abstract translation: 本发明涉及一种确定TEM的投影系统中的失真的方法,以及一种校正这些像差的方法。 通过收集样本的大量图像来确定像差,样本在每次图像获取之间略微偏移。 在对与样品相同部分显示的图像子场(303,304-i)进行比较。 这些子场(303,304-i)将显示对应于差分像差的小差异。 以这种方式,可以确定大量点中的差分像差,之后可以通过积分确定每个点的像差。 通过现在校正要显示的图像中的每个检测像素的位置,显示的图像具有大大减小的像差。 根据本发明的方法的优点是不需要样品的高精度步骤,也不需要具有已知几何形状的样品。

    Scanning electron microscope and calibration of image distortion
    110.
    发明授权
    Scanning electron microscope and calibration of image distortion 有权
    扫描电子显微镜和图像失真校准

    公开(公告)号:US07750296B2

    公开(公告)日:2010-07-06

    申请号:US11866426

    申请日:2007-10-03

    CPC classification number: H01J37/28 H01J37/265 H01J2237/2826

    Abstract: In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.

    Abstract translation: 在通过测量扫描失真和校准扫描失真来获得没有失真的扫描电子显微镜图像的方法和装置中,存在由于电子束的扫描失真引起的尺寸控制中出现误差的问题。 为了解决这个问题,通过用电子束扫描预定区域来获得图像,从图像中选择多个区域,在每个区域中测量图案间距,并根据结果计算扫描失真量 的测量,然后校正。

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