Abstract:
Embodiments of the invention relate to correcting errors in scanning electron measurements during measuring structural dimensions of an integrated circuit for optical proximity correction by extracting feature edges of a test pattern within an image, calculating at least one scaling error of the image by comparing the extracted feature edges of assist structures with a layout pattern, modifying feature edges of test structures within the test pattern by incorporating the at least one scaling error so as to at least partially compensate the scaling errors, and verifying a model for optical proximity corrections and/or model input data by using the modified feature edges of the test structures.
Abstract:
Charged particle beam equipment has a processing unit for calibrating dimension values of an enlarged specimen image, and means for changing the amount by which a charged particle beam is scanned. Also, a specimen stand has a mechanism for holding a specimen having a periodical structure or a specimen simultaneously having a periodical structure and a non-periodical structure, and a storage device for automatically changing a magnification for an enlarged specimen image, and storing measured values at all magnifications.
Abstract:
An ultrafast system (and methods) for characterizing one or more samples. The system includes a stage assembly, which has a sample to be characterized. The system has a laser source that is capable of emitting an optical pulse of less than 1 ps in duration. The system has a cathode coupled to the laser source. In a specific embodiment, the cathode is capable of emitting an electron pulse less than 1 ps in duration. The system has an electron lens assembly adapted to focus the electron pulse onto the sample disposed on the stage. The system has a detector adapted to capture one or more electrons passing through the sample. The one or more electrons passing through the sample is representative of the structure of the sample. The detector provides a signal (e.g., data signal) associated with the one or more electrons passing through the sample that represents the structure of the sample. The system has a processor coupled to the detector. The processor is adapted to process the data signal associated with the one or more electrons passing through the sample to output information associated with the structure of the sample. The system has an output device coupled to the processor. The output device is adapted to output the information associated with the structure of the sample.
Abstract:
There is provided a method for setting a suitable imaging magnification for each of a plurality of measurement places in a charged particle beam apparatus which images a semiconductor pattern.For a given measuring point coordinate, a line segment or a vertex representing a change in concavity and convexity near the measuring point coordinate is searched, and an imaging magnification is set so that coordinates on a sample corresponding to both ends which gives a length that serves as a reference falls in a field of view of the charged particle beam apparatus by letting a minimum distance be the reference, of distances between line segments representing a change in concavity and convexity from the measuring point coordinate or a distance between neighboring vertexes.
Abstract:
A system and a method for material analysis of a microscopic element, the method comprising: illuminating an area that includes at least a portion of the microscopic element by a charged particle beam, detecting particles that are generated in the area in response to the charged particle beam and analyzing the detected particles to provide an indication about a material characteristic of the microscopic element, wherein the operation of illumination is implemented as a sequence of displacement compensation determination periods, each provided between consecutive material analysis periods, the method further comprising evaluating during a displacement compensation determination period, a displacement of the charged particle beam with respect to the microscopic element and during a consecutive material analysis period applying a spatial adjustment measure as required, thereby compensating for a drift of the charged particle beam.
Abstract:
It is to prevent an image drift from occurring caused by a specimen being charged when observing the specimen including an insulating material.A first scan is performed in a predetermined direction on scanning line and in a predetermined sequential direction of scanning lines and a second scan is performed in a scanning direction different from the predetermined scanning direction and in a sequential direction different from the predetermined sequential direction. An image may be created by repeating the process of executing the second scan after executing the first scan and by requiring the arithmetic average of the frames obtained by the second scans. An image may be created by averaging arithmetically at least one frame obtained by the first scan and at least one frame obtained by the second scan.
Abstract:
A method for aligning an energy beam to an object in an atom probe is disclosed. The method comprises monitoring at least one parameter indicative of an interaction between the energy beam and the object. A signal is generated in response to the interaction of the energy beam and the object. The signal is then used to effectuate control of the alignment of the energy beam to the object.
Abstract:
The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.
Abstract:
The invention relates to a method of determining the distortions in the projection system of a TEM, and a method of correcting for these aberrations. The aberrations are determined by collecting a large number of images of a sample, the sample slightly displaced between each acquisition of an image. On the images sub-fields (303, 304-i) showing identical parts of the sample are compared. These sub-fields (303, 304-i) will show small differences, corresponding to differential aberrations. In this way the differential aberrations in a large number of points can determined, after which the aberrations for each point can be determined by integration. By now correcting the position of each detected pixel in an image to be displayed, the displayed image has much reduced aberrations. An advantage of the method according to the invention is that no highly accurate steps of the sample are needed, nor is a sample with known geometry needed.
Abstract:
In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.