Abstract:
A package of the present invention has a laminate structure of a plurality of ceramic layers, and includes a cavity for housing a light emitting element. A mount surface is defined on a side surface parallel with the depth direction of the cavity. A pair of external electrodes each including a charged electrode portion and a coated electrode portion are formed over the entire length in the laminating direction at two corners defined by intersection of the mount surface and two side surfaces perpendicular to the mount surface. When the package is mounted, a pair of charged electrode portions and a pair of coated electrode portions are soldered to a surface of a substrate.
Abstract:
A semiconductor device with micro connecting elements and method for producing the same disclosed. In one embodiment, the semiconductor device includes a number of micro connecting elements for the high-frequency coupling of components of the semiconductor device. The micro connecting elements have an at least three-layered structural form with a first layer of conducting material, a second layer of insulating material and a third layer of conducting material. In this configuration, the first and third layers and extend along a common center line and shield one another against electromagnetic interference fields. The first and third layers and are fixed on correspondingly adapted pairs of contact terminal areas of the components.
Abstract:
A technique for eliminating electrically conductive vias is disclosed. In one embodiment, the technique is realized as an improved multilayer circuit board for eliminating electrically conductive vias. The multilayer circuit board has a top layer and a buried layer separated by at least one dielectric layer, wherein the buried layer includes an electrically conductive power plane portion and an electrically conductive ground plane portion. The improvement comprises a cavity in the multilayer circuit board extending through the top layer and the at least one dielectric layer so as to expose at least a portion of the power plane portion and the ground plane portion of the buried layer within the cavity. The cavity is sized to accommodate an electronic component therein such that the electronic component makes electrical contact with the exposed portion of the power plane portion and the ground plane portion of the buried layer, thereby eliminating the need for electrically conductive vias electrically connected to the power plane portion and the ground plane portion of the buried layer.
Abstract:
A circuit array substrate 10 includes pixel and connecting edge sections 80 and 90. Connecting edge section 90 is provided with edge portions 5a and shoulder portions 55 of transparent thin resin film 5 over which terminal pins 101 of tape carrier packages (TCP) 100 are disposed. Terminal pins 101 are connected to connecting pads 14 at their contact portions 103. Shoulder portions 55 prevent a coated photoresist film from being excessive in depth and residues of the photoresist film from being left in the foot of edge face 5a in the step of forming metal reflective pixel electrodes. Thus, no residue of the metal film exists after its etching treatment in that step so that no electrical short circuits are caused between connecting pads 14 and adjacent terminal pins 101.
Abstract:
A flip chip package structure comprising a chip, a substrate, at least a first bump and a plurality of second bumps is provided. The chip has a first bump-positioning region and the substrate has a second bump-positioning region. The substrate has at least a first hole and multiple second holes. The first hole and the second holes are located within the second bump-positioning region. The first hole has a depth greater than that of the second hole. The first bump is set up between the first bump-positioning region of the chip and the second bump-positioning region of the substrate. The first bump is bonded to the substrate through the first holes. The second bumps are set up between the first bump-positioning region of the chip and the second bump-positioning region of the substrate. The second bumps are bonded to the substrate through the second holes. The first bump has a volume greater than the volume of the second bump.
Abstract:
An electrode connection structure between outer lead(s) of TCP(s), being first circuit board(s), and actuator member electrode(s) for connection to external circuitry, being second circuit board(s); actuator member(s) electrode(s) for connection to external circuitry being formed in or on floor(s) of recess(es) which is/are step(s) smaller in magnitude than thickness(es) of outer lead(s) protruding from polyimide substrate(s) of TCP(s); adhesive(s) having thickness(es) more or less equal to difference(s) between step(s) and thickness(es) of outer lead(s); and outer lead(s) being electrically and mechanically connected to electrode(s) for connection to external circuitry.
Abstract:
An interposer including a fence that receives and aligns a semiconductor device, such as a flip-chip type semiconductor device, with a substrate. The fence may include edges that are configured to progressively align a semiconductor device with the substrate. The fence may also include one or more laterally recessed regions to facilitate rough alignment of a semiconductor device with the substrate. Methods for fabricating the fence include the use of stereolithographic and molding processes. When stereolithography is used to fabricate the fence, a machine vision system that includes at least one camera operably associated with a computer may be used to control a stereolithography apparatus and facilitates recognition of the position and orientation of substrates on and around which material is to be applied in one or more layers to form the fence. As a result, the substrates need not be precisely mechanically aligned.
Abstract:
A semiconductor device and a method of manufacturing the semiconductor device includes: a first step of interposing a thermosetting anisotropic conductive material 16 between a substrate 12 and a semiconductor chip 20; a second step in which pressure and heat are applied between the semiconductor chip 20 and the substrate 12, an interconnect pattern 10 and electrodes 22 are electrically connected, and the anisotropic conductive material 16 is spreading out beyond the semiconductor chip 20 and is cured in the region of contact with the semiconductor chip 20; and a third step in which the region of the anisotropic conductive material 16 other than the region of contact with the semiconductor chip 20 is heated.
Abstract:
BGA chip module and method for producing the BGA chip module by providing a carrier, forming holes at points at which bonding points of the BGA chip module are to be produced, forming metallization areas on an upper side of the carrier and covering the holes, connecting bonding points of a chip to the metallization areas, and introducing bonding elements into the holes.
Abstract:
A method for implementing a circuit component on a surface of a multilayer circuit board is provided. The circuit component includes a plurality of pins and the circuit board includes a plurality of electrically conductive vias penetrating at least one layer of the circuit board and being arranged so as to form at least one channel for routing one or more traces at one or more signal layers of the circuit board. The method comprises the step of forming at least one pin of the plurality of pins of the circuit component to have a length compatible with a depth of a corresponding via of the circuit board.