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    MULTI-AXIS INTEGRATED MEMS INERTIAL SENSING DEVICE ON SINGLE PACKAGED CHIP
    111.
    发明申请
    MULTI-AXIS INTEGRATED MEMS INERTIAL SENSING DEVICE ON SINGLE PACKAGED CHIP 审中-公开
    单轴集成式MEMS传感器在单包装芯片上的实现

    公开(公告)号：US20140311242A1

    公开(公告)日：2014-10-23

    申请号：US14162718

    申请日：2014-01-23

    Applicant: mCube Inc.

    Inventor： TERRENCE LEE ,  WENHUA ZHANG ,  SUDHEER SRIDHARAMURTHY ,  SHINGO YONEOKA

    IPC: G01C19/56 ,  G01P15/02

    CPC classification number: G01C19/56 ,  B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01C19/5783 ,  G01P1/003 ,  G01P15/02 ,  G01P15/18 ,  G01P2015/0871 ,  G01P2015/088

    Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

    Abstract translation: 多轴集成MEMS惯性传感器装置。 该设备可以在单个芯片上包含一个集成的3轴陀螺仪和3轴加速度计，创建了6轴惯性传感器设备。 通过将加速度计装置添加到陀螺仪装置的中心，该结构在空间上有效地利用了芯片的设计区域。 设计架构可以是几何形状的矩形或方形形状，它利用整个芯片区域，并在一定的区域内最大化传感器尺寸。 MEMS集中在封装中，这有利于传感器的温度性能。 此外，集成的多轴惯性传感器装置的电接合焊盘可以配置在矩形芯片布局的四个角中。 该配置保证了设计的对称性和芯片面积的有效利用。

    MEMS Devices and Methods for Forming Same
    112.
    发明申请
    MEMS Devices and Methods for Forming Same 有权
    MEMS器件及其形成方法

    公开(公告)号：US20140264661A1

    公开(公告)日：2014-09-18

    申请号：US13893058

    申请日：2013-05-13

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

    IPC: B81C3/00 ,  B81B7/00

    CPC classification number: B81B7/04 ,  B81B7/0032 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00293 ,  B81C1/00309 ,  B81C3/001 ,  B81C2203/0118

    Abstract: Embodiments of the present disclosure include MEMS devices and methods for forming MEMS devices. An embodiment is a method for forming a microelectromechanical system (MEMS) device, the method including forming a MEMS wafer having a first cavity, the first cavity having a first pressure, and bonding a carrier wafer to a first side of the MEMS wafer, the bonding forming a second cavity, the second cavity having a second pressure, the second pressure being greater than the first pressure. The method further includes bonding a cap wafer to a second side of the MEMS wafer, the second side being opposite the first side, the bonding forming a third cavity, the third cavity having a third pressure, the third pressure being greater than the first pressure and less than the second pressure.

    Abstract translation: 本公开的实施例包括MEMS器件和用于形成MEMS器件的方法。 一个实施例是用于形成微机电系统（MEMS）装置的方法，该方法包括形成具有第一腔的MEMS晶片，第一腔具有第一压力，并将载体晶片接合到MEMS晶片的第一侧， 接合形成第二腔，所述第二腔具有第二压力，所述第二压力大于所述第一压力。 该方法还包括将盖晶片接合到MEMS晶片的第二侧，第二侧与第一侧相对，接合形成第三腔，第三腔具有第三压力，第三压力大于第一压力 并且小于第二压力。

    SYSTEM AND METHOD FOR REDUCING OFFSET VARIATION IN MULTIFUNCTION SENSOR DEVICES
    113.
    发明申请
    SYSTEM AND METHOD FOR REDUCING OFFSET VARIATION IN MULTIFUNCTION SENSOR DEVICES 有权
    用于减少多功能传感器设备偏移变化的系统和方法

    公开(公告)号：US20140251009A1

    公开(公告)日：2014-09-11

    申请号：US13791329

    申请日：2013-03-08

    Applicant: FREESCALE SEMICONDUCTOR, INC.

    Inventor： Mark E. SCHLARMANN ,  Deyou FANG ,  Keith L. KRAVER ,  Mike A. MARGULES ,  Hiroto SAHARA

    IPC: G01C19/56 ,  B81B5/00

    CPC classification number: G01P9/04 ,  B81B5/00 ,  B81B7/02 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2207/03 ,  G01C19/5776

    Abstract: Systems and methods are provided for improved multifunction sensing. In these embodiments a multifunction sensing device (100) includes a microelectromechanical (MEMS) gyroscope (110) and at least a second sensor (112). The MEMS gyroscope (110) is configured to generate a first clock signal, and the second sensor includes a second clock signal. The multifunction sensing device further includes a reset mechanism (114), the reset mechanism (114) configured to generate a reset signal to set the relative periodic phase alignment of the second clock signal to the first clock signal. Consistently setting the relative periodic phase alignment of the clocks for the other sensor devices (112) to the clock of the MEMS gyroscope (110) can improve the performance of the devices by reducing the probability that varying output offsets will occur in the multiple sensing devices.

    Abstract translation: 提供了用于改进多功能感测的系统和方法。 在这些实施例中，多功能感测装置（100）包括微机电（MEMS）陀螺仪（110）和至少第二传感器（112）。 MEMS陀螺仪（110）被配置为产生第一时钟信号，并且第二传感器包括第二时钟信号。 多功能感测装置还包括复位机构（114），复位机构（114）被配置为产生复位信号，以将第二时钟信号的相对周期性相位对准设置为第一时钟信号。 将其他传感器装置（112）的时钟的相对周期性相位对准一致地设置到MEMS陀螺仪（110）的时钟可以通过减少在多个感测装置中发生变化的输出偏移的概率来改善装置的性能 。

    INERTIAL FORCE SENSOR
    114.
    发明申请
    INERTIAL FORCE SENSOR 有权
    惯性力传感器

    公开(公告)号：US20140238131A1

    公开(公告)日：2014-08-28

    申请号：US14347867

    申请日：2012-09-28

    Applicant: PANASONIC CORPORATION

    Inventor： Shigehiro Yoshiuchi ,  Satoshi Ohuchi ,  Tsuyoshi Fujii ,  Kensaku Yamamoto ,  Hideo Ohkoshi

    IPC: G01P15/08

    CPC classification number: G01C19/5769 ,  B81B7/0048 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/07 ,  G01P15/0802 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    Abstract: An inertial force sensor that can suppress fluctuation of detection sensitivity even if an external stress is applied to the inertial force sensor. Angular velocity sensor (1), that is, an inertial force sensor includes ceramic substrate (6), lower lid (4) adhering to ceramic substrate (6) with adhesives (11a and 11b) (first adhesives), and sensor element (2) adhering to lower lid (4) with adhesives (10a and 10b) (second adhesives). The elastic moduli of adhesives (11a and 11b) are smaller than those of adhesives (10a and 10b).

    Abstract translation: 即使向惯性力传感器施加外部应力也能够抑制检测灵敏度的波动的惯性力传感器。 角速度传感器（1）即惯性力传感器包括陶瓷基板（6），粘合剂（11a和11b）（第一粘合剂）和传感器元件（2）附着在陶瓷基板（6）上的下盖 ）用粘合剂（10a和10b）（第二粘合剂）粘附到下盖（4）上。 粘合剂（11a和11b）的弹性模量小于粘合剂（10a和10b）的弹性模量。

    Systems and methods for a four-layer chip-scale MEMS device
    116.
    发明授权
    Systems and methods for a four-layer chip-scale MEMS device 有权
    用于四层芯片级MEMS器件的系统和方法

    公开(公告)号：US08748206B2

    公开(公告)日：2014-06-10

    申请号：US13295273

    申请日：2011-11-14

    Applicant: Robert D. Horning

    Inventor： Robert D. Horning

    IPC: H01L21/00

    CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2201/019 ,  H01L2224/48091 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Systems and methods for a micro-electromechanical system (MEMS) apparatus are provided. In one embodiment, a system comprises a first double chip that includes a first base layer; a first device layer bonded to the first base layer, the first device layer comprising a first set of MEMS devices; and a first top layer bonded to the first device layer, wherein the first set of MEMS devices is hermetically isolated. The system also comprises a second double chip that includes a second base layer; a second device layer bonded to the second base layer, the second device layer comprising a second set of MEMS devices; and a second top layer bonded to the second device layer, wherein the second set of MEMS devices is hermetically isolated, wherein a first top surface of the first top layer is bonded to a second top surface of the second top layer.

    Abstract translation: 提供了一种用于微机电系统（MEMS）装置的系统和方法。 在一个实施例中，系统包括第一双芯片，其包括第一基层; 结合到第一基底层的第一器件层，第一器件层包括第一组MEMS器件; 以及结合到第一器件层的第一顶层，其中第一组MEMS器件被气密隔离。 该系统还包括第二双芯片，其包括第二基层; 结合到第二基层的第二器件层，第二器件层包括第二组MEMS器件; 以及结合到所述第二器件层的第二顶层，其中所述第二组MEMS器件是气密隔离的，其中所述第一顶层的第一顶表面接合到所述第二顶层的第二顶表面。

    Micromechanical component having a test structure for determining the layer thickness of a spacer layer and method for manufacturing such a test structure
    118.
    发明授权
    Micromechanical component having a test structure for determining the layer thickness of a spacer layer and method for manufacturing such a test structure 有权
    具有用于确定间隔层的层厚度的测试结构的微机械部件和用于制造这种测试结构的方法

    公开(公告)号：US08695427B2

    公开(公告)日：2014-04-15

    申请号：US13116759

    申请日：2011-05-26

    Applicant: Jochen Reinmuth ,  Ralf Boessendoerfer ,  Axel Franke ,  Mirko Hattass

    Inventor： Jochen Reinmuth ,  Ralf Boessendoerfer ,  Axel Franke ,  Mirko Hattass

    IPC: G01P15/125

    CPC classification number: G01B7/085 ,  B81B2201/0242 ,  B81C99/0045 ,  G01P15/125 ,  G01P2015/082 ,  G01P2015/0831

    Abstract: A micromechanical component is described including a substrate having a spacer layer and a test structure for ascertaining the thickness of the spacer layer. The test structure includes a seismic mass, which is elastically deflectable along a measuring axis parallel to the substrate, a first electrode system and a second electrode system for deflecting the seismic mass along the measuring axis, having a mass electrode, which is produced by a part of the seismic mass, and a substrate electrode, which is situated on the substrate in each case, the first electrode system being designed to be thicker than the second electrode system by the layer thickness of the spacer layer.

    Abstract translation: 描述了一种微机械部件，其包括具有间隔层的基板和用于确定间隔层的厚度的测试结构。 测试结构包括沿着平行于基板的测量轴线可弹性偏转的地震质量块，用于沿着测量轴偏转地震质量块的第一电极系统和第二电极系统，具有质量电极，其由 地震质量的一部分，以及基板电极，其位于每种情况下的基板上，第一电极系统被设计为比间隔层的层厚度厚于第二电极系统。

    Micromechanical device including N-type doping for providing temperature compensation and method of designing thereof
    120.
    发明授权
    Micromechanical device including N-type doping for providing temperature compensation and method of designing thereof 有权
    包括用于提供温度补偿的N型掺杂的微机械装置及其设计方法

    公开(公告)号：US08558643B2

    公开(公告)日：2013-10-15

    申请号：US13468052

    申请日：2012-05-10

    Applicant: Mika Prunnila ,  Antti Jaakkola ,  Tuomas Pensala

    Inventor： Mika Prunnila ,  Antti Jaakkola ,  Tuomas Pensala

    IPC: H03H9/24 ,  H03H3/013 ,  H01L29/06 ,  H01L21/00

    CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0177 ,  G06F17/5045 ,  H03H9/02448 ,  H03H9/2447 ,  H03H2009/2442

    Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.

    Abstract translation: 本发明涉及一种微机械装置，其包括能够偏转或谐振并且包括具有不同材料特性的至少两个区域的半导体元件和功能性耦合到所述半导体元件的驱动或感测装置。 根据本发明，所述区域中的至少一个包括一种或多种n型掺杂剂，并且所述区域的相对体积，掺杂浓度，掺杂剂和/或晶体取向被构造成使得广义刚度的温度敏感度 在区域的至少一个温度下符号相反，半导体元件的整体刚度的总体温度漂移在100℃的温度范围内为50ppm以下。该器件可以是谐振器。 还公开了一种设计该设备的方法。

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