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    COMPOSITE CAVITY AND FORMING METHOD THEREOF
    111.
    发明申请
    COMPOSITE CAVITY AND FORMING METHOD THEREOF 审中-公开
    复合孔及其形成方法

    公开(公告)号：US20170044006A1

    公开(公告)日：2017-02-16

    申请号：US15305799

    申请日：2014-11-05

    Applicant: ADVANCED SEMICONDUCTOR MANUFACTURING CO. LTD

    Inventor： Yuanjun Xu ,  Yilin Yan ,  Weijia Xue

    IPC: B81B7/02 ,  B81C1/00

    CPC classification number: B81B7/02 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C1/00396 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2201/0198 ,  B81C2201/053

    Abstract: There is provided a method for forming a composite cavity and a composite cavity formed using the method. The method comprises the following steps: providing a silicon substrate (101); forming an oxide layer on the front side thereof; patterning the oxide layer to form one or more grooves (103), the position of the groove (103) corresponding to the position of small cavity (109) to be formed; providing a bonding wafer (104), which is bonded to the patterned oxide layer to form one or more closed micro-cavity structures (105) between the silicon substrate (101) and the bonding wafer (104); forming a protective film (106) over the bonding wafer (104) and forming a masking layer (107) on the back side of the silicon substrate (101); patterning the masking layer (107), the pattern of the masking layer (107) corresponding to the position of a large cavity (108) to be formed; using the masking layer (107) as a mask, etching the silicon substrate (101) from the back side until the oxide layer at the front side thereof to form the large cavity (108) in the silicon substrate (101); and using the masking layer (107) and the oxide layer as a mask, etching the bonding wafer (104) from the back side through the silicon substrate (101) until the protective film (106) thereover to form one or more small cavities (109) in the bonding wafer (104). The uniformity of thickness of the semiconductor medium layer where the small cavity (109) in the composite cavity is located is well controlled by the present invention.

    Abstract translation: 提供了使用该方法形成复合腔和复合腔的方法。 该方法包括以下步骤：提供硅衬底（101）; 在其前侧形成氧化物层; 图案化氧化物层以形成一个或多个凹槽（103），凹槽（103）的位置对应于待形成的小空腔（109）的位置; 提供接合晶片（104），其接合到所述图案化氧化物层以在所述硅衬底（101）和所述接合晶片（104）之间形成一个或多个闭合微腔结构（105）; 在所述接合晶片（104）上形成保护膜（106），并在所述硅衬底（101）的背侧上形成掩模层（107）; 图案化掩模层（107），对应于待形成的大空腔（108）的位置的掩模层（107）的图案; 使用掩模层（107）作为掩模，从背面蚀刻硅衬底（101）直到其前侧的氧化物层在硅衬底（101）中形成大空腔（108）; 并且使用所述掩模层（107）和所述氧化物层作为掩模，通过所述硅衬底（101）从所述背面蚀刻所述接合晶片（104）直到所述保护膜（106）在其上形成一个或多个小空腔 109）。 复合空腔中的小空腔（109）所在的半导体介质层的厚度均匀性由本发明很好地控制。

    MEMS COMPONENT INCLUDING A DIAPHRAGM ELEMENT WHICH IS ATTACHED VIA A SPRING STRUCTURE TO THE COMPONENT LAYER STRUCTURE
    113.
    发明申请
    MEMS COMPONENT INCLUDING A DIAPHRAGM ELEMENT WHICH IS ATTACHED VIA A SPRING STRUCTURE TO THE COMPONENT LAYER STRUCTURE 审中-公开
    包括通过弹簧结构连接到组件层结构的膜片元件的MEMS组件

    公开(公告)号：US20170022047A1

    公开(公告)日：2017-01-26

    申请号：US15214193

    申请日：2016-07-19

    Applicant: Robert Bosch GmbH

    Inventor： Fabian PURKL ,  Michael Stumber ,  Ricardo Ehrenpfordt ,  Rolf Scheben ,  Benedikt Stein ,  Christoph Schelling

    IPC: B81B3/00 ,  H04R17/02

    CPC classification number: B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0163 ,  H04R17/02 ,  H04R2201/003

    Abstract: Measures are provided, by which mechanical stresses within the diaphragm structure of a MEMS component may be intentionally dissipated, and which additionally enable the implementation of diaphragm elements having a large diaphragm area in comparison to the chip area. The diaphragm element is formed in the layer structure of the MEMS component. It spans an opening in the layer structure and is attached via a spring structure to the layer structure. The spring structure includes at least one first spring component, which is oriented essentially in parallel to the diaphragm element and is formed in a layer plane below the diaphragm element. Furthermore, the spring structure includes at least one second spring component, which is oriented essentially perpendicularly to the diaphragm element. The spring structure is designed in such a way that the area of the diaphragm element is greater than the area of the opening which it spans.

    Abstract translation: 提供了一种措施，通过其可以有意地消散MEMS部件的膜结构内的机械应力，并且这另外使得能够实现与芯片面积相比具有大的隔膜面积的隔膜元件。 隔膜元件形成在MEMS部件的层结构中。 它跨越层结构中的开口并且经由弹簧结构附接到层结构。 弹簧结构包括至少一个第一弹簧部件，其基本上平行于隔膜元件定向并且形成在隔膜元件下方的层平面中。 此外，弹簧结构包括至少一个第二弹簧部件，其基本上垂直于隔膜元件定向。 弹簧结构设计成使得隔膜元件的面积大于它所跨开的开口面积。

    Signal processing platform in an acoustic capture device
    114.
    发明授权
    Signal processing platform in an acoustic capture device 有权
    信号处理平台在声学捕获装置中

    公开(公告)号：US09554214B2

    公开(公告)日：2017-01-24

    申请号：US14795305

    申请日：2015-07-09

    Applicant: Knowles Electronics, LLC

    Inventor： John Nielsen ,  Anders Svava Mortensen ,  Rene Rye Larsen ,  Robert A. Popper ,  Dibyendu Nandy ,  Jacob Midtgaard

    IPC: H04R1/02 ,  H04R3/00 ,  H04R25/00 ,  H04R23/00 ,  H04R1/04 ,  H04R19/00 ,  H04R1/00

    CPC classification number: H04R23/00 ,  B81B2201/0257 ,  H04R1/005 ,  H04R1/04 ,  H04R3/007 ,  H04R19/005 ,  H04R2201/003

    Abstract: A microphone includes a base, a micro electro mechanical system (MEMS) device disposed on the base, and a front end processing apparatus disposed on the base and coupled to the MEMS device, the front end processing apparatus being configured to convert analog signals received from the MEMS device into digital signals. The microphone also includes a DSP apparatus, the DSP apparatus being a digital programmed device with a computer memory, the DSP apparatus configured to process the digital signals received from the front end processing apparatus. The MEMS device, the front end processing apparatus, and DSP apparatus are enclosed within a single microphone enclosure or assembly. During operation the DSP apparatus generates DSP noise. The DSP apparatus includes a noise reduction structure that substantially prevents the DSP noise from reaching or interfering with the operation of the MEMS device or the front end processing apparatus.

    Abstract translation: 麦克风包括基座，设置在基座上的微电子机械系统（MEMS）装置，以及设置在基座上并耦合到MEMS装置的前端处理装置，前端处理装置被配置为将从 将MEMS器件转换为数字信号。 麦克风还包括DSP装置，DSP装置是具有计算机存储器的数字编程装置，DSP装置被配置为处理从前端处理装置接收的数字信号。 MEMS器件，前端处理设备和DSP设备被封装在单个麦克风外壳或组件内。 在操作过程中DSP设备产生DSP噪声。 DSP装置包括基本上防止DSP噪声到达或干扰MEMS装置或前端处理装置的操作的噪声降低结构。

    Hinged MEMS diaphragm
    115.
    发明授权
    Hinged MEMS diaphragm 有权
    铰链MEMS隔膜

    公开(公告)号：US09554213B2

    公开(公告)日：2017-01-24

    申请号：US14935771

    申请日：2015-11-09

    Applicant: The Research Foundation for The State University of New York

    Inventor： Ronald N. Miles ,  Weili Cui

    IPC: H04R19/04 ,  B81C1/00 ,  B81B3/00

    CPC classification number: H04R19/04 ,  B81B3/0027 ,  B81B3/007 ,  B81B2201/0257 ,  B81B2201/042 ,  B81B2203/0127 ,  B81B2207/053 ,  B81C1/00595 ,  H04R2201/003 ,  H04R2307/025

    Abstract: A micromechanical structure, comprising a substrate having a through hole; a residual portion of a sacrificial oxide layer peripheral to the hole; and a polysilicon layer overlying the hole, patterned to have a planar portion; a supporting portion connecting the planar portion to polysilicon on the residual portion; polysilicon stiffeners formed extending beneath the planar portion overlying the hole; and polysilicon ribs surrounding the supporting portion, attached near a periphery of the planar portion. The polysilicon ribs extend to a depth beyond the stiffeners, and extend laterally beyond an edge of the planar portion. The polysilicon ribs are released from the substrate during manufacturing after the planar region, and reduce stress on the supporting portion.

    Abstract translation: 一种微机械结构，包括具有通孔的基板; 在孔周围的牺牲氧化物层的残留部分; 以及覆盖所述孔的多晶硅层，被图案化成具有平面部分; 将所述平面部分连接到所述残余部分上的多晶硅的支撑部分; 形成在覆盖孔的平面部分下方形成的多晶硅加强件; 以及围绕支撑部分的多晶硅肋，附接在平面部分的周边附近。 多晶硅肋延伸到超出加强件的深度，并且横向延伸超过平面部分的边缘。 在平面区域之后的制造过程中，多晶硅肋从基板上释放，并且减小支撑部分的应力。

    Method and structure of MEMS WLCSP fabrication
    116.
    发明授权
    Method and structure of MEMS WLCSP fabrication 有权
    MEMS WLCSP制作的方法和结构

    公开(公告)号：US09540232B2

    公开(公告)日：2017-01-10

    申请号：US14507177

    申请日：2014-10-06

    Applicant: mCube Inc.

    Inventor： Chien Chen Lee

    IPC: B81C1/00

    CPC classification number: B81C1/00301 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2203/0109 ,  B81C2203/0154

    Abstract: A method for fabricating a MEMS-IC device structure can include receiving a CMOS substrate comprising a plurality of CMOS circuits and a surface portion. A MEMS substrate having at least one MEMS device can be received and coupled to the CMOS substrate. The MEMS substrate and the surface portion of the CMOS substrate can be encapsulated with a molding material, which forms a top surface. A first plurality of vias can be created in the molding material from the top surface to the surface portion of the CMOS substrate. A conductive material can be disposed within the first plurality of vias such that the conductive material is electrically coupled to a portion of the CMOS substrate. A plurality of interconnects can be formed from the conductive material to the top surface of the molding material and a plurality of solder balls can be formed upon these interconnects.

    Abstract translation: 制造MEMS-IC器件结构的方法可以包括接收包括多个CMOS电路和表面部分的CMOS衬底。 具有至少一个MEMS器件的MEMS衬底可被接收并耦合到CMOS衬底。 MEMS衬底和CMOS衬底的表面部分可以用形成顶表面的成型材料封装。 可以在模制材料中从CMOS衬底的顶表面到表面部分形成第一多个通孔。 导电材料可以设置在第一多个通孔内，使得导电材料电耦合到CMOS衬底的一部分。 可以从导电材料形成多个互连件到模制材料的顶表面，并且可以在这些互连件上形成多个焊球。

    Double diaphragm MEMS microphone without a backplate element
    118.
    发明授权
    Double diaphragm MEMS microphone without a backplate element 有权
    双隔膜MEMS麦克风无背板元件

    公开(公告)号：US09510107B2

    公开(公告)日：2016-11-29

    申请号：US14198657

    申请日：2014-03-06

    Applicant: Infineon Technologies AG

    Inventor： Alfons Dehe ,  Marina Fekry Megally Bastarous

    IPC: H04R19/04 ,  H04R19/00 ,  B81C1/00

    CPC classification number: H04R19/04 ,  B81B2201/0257 ,  B81C1/00182 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/15151 ,  H01L2924/16152 ,  H04R19/005 ,  H04R2201/003 ,  H01L2924/00014

    Abstract: A sensor structure may include a first suspended structure and a second suspended structure disposed from the first suspended structure to form a volume. The first suspended structure and the second suspended structure may be arranged relative to each other such that a received pressure wave entering the volume between the first suspended structure and the second suspended structure generates a displacement of the first suspended structure to a first direction and a displacement of the second suspended structure to a second direction different from the first direction and the displacement may generate a measurable signal.

    Abstract translation: 传感器结构可以包括第一悬挂结构和从第一悬挂结构设置以形成体积的第二悬挂结构。 第一悬挂结构和第二悬挂结构可以相对于彼此布置，使得进入第一悬挂结构和第二悬置结构之间的体积的接收压力波产生第一悬挂结构朝向第一方向的位移和位移 的第二悬挂结构的第二方向与第一方向不同，并且位移可以产生可测量的信号。

    SYSTEM AND METHOD FOR A MEMS TRANSDUCER
    120.
    发明申请
    SYSTEM AND METHOD FOR A MEMS TRANSDUCER 有权
    一种用于MEMS传感器的系统和方法

    公开(公告)号：US20160340173A1

    公开(公告)日：2016-11-24

    申请号：US14717556

    申请日：2015-05-20

    Applicant: Infineon Technologies AG

    Inventor： Wolfgang Klein ,  Martin Wurzer ,  Stefan Barzen ,  Alfons Dehe

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/007 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C1/00658 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003

    Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a first electrode, a second electrode fixed to an anchor at a perimeter of the second electrode, and a mechanical support separate from the anchor at the perimeter of the second electrode and mechanically connected to the first electrode and the second electrode. The mechanical support is fixed to a portion of the second electrode such that, during operation, a maximum deflection of the second electrode occurs between the mechanical structure and the perimeter of the second electrode.

    Abstract translation: 根据实施例，微机电系统（MEMS）换能器包括第一电极，固定到第二电极的周边处的锚固件的第二电极以及与第二电极的周边处的锚固件分离的机械支撑件，并机械连接 到第一电极和第二电极。 机械支撑件固定到第二电极的一部分，使得在操作期间，第二电极的最大偏转发生在机械结构和第二电极的周边之间。

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