公开(公告)号：US20170044006A1

公开(公告)日：2017-02-16

申请号：US15305799

申请日：2014-11-05

Applicant: ADVANCED SEMICONDUCTOR MANUFACTURING CO. LTD

Inventor： Yuanjun Xu ,  Yilin Yan ,  Weijia Xue

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C1/00396 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2201/0198 ,  B81C2201/053

Abstract: There is provided a method for forming a composite cavity and a composite cavity formed using the method. The method comprises the following steps: providing a silicon substrate (101); forming an oxide layer on the front side thereof; patterning the oxide layer to form one or more grooves (103), the position of the groove (103) corresponding to the position of small cavity (109) to be formed; providing a bonding wafer (104), which is bonded to the patterned oxide layer to form one or more closed micro-cavity structures (105) between the silicon substrate (101) and the bonding wafer (104); forming a protective film (106) over the bonding wafer (104) and forming a masking layer (107) on the back side of the silicon substrate (101); patterning the masking layer (107), the pattern of the masking layer (107) corresponding to the position of a large cavity (108) to be formed; using the masking layer (107) as a mask, etching the silicon substrate (101) from the back side until the oxide layer at the front side thereof to form the large cavity (108) in the silicon substrate (101); and using the masking layer (107) and the oxide layer as a mask, etching the bonding wafer (104) from the back side through the silicon substrate (101) until the protective film (106) thereover to form one or more small cavities (109) in the bonding wafer (104). The uniformity of thickness of the semiconductor medium layer where the small cavity (109) in the composite cavity is located is well controlled by the present invention.

Abstract translation: 提供了使用该方法形成复合腔和复合腔的方法。 该方法包括以下步骤：提供硅衬底（101）; 在其前侧形成氧化物层; 图案化氧化物层以形成一个或多个凹槽（103），凹槽（103）的位置对应于待形成的小空腔（109）的位置; 提供接合晶片（104），其接合到所述图案化氧化物层以在所述硅衬底（101）和所述接合晶片（104）之间形成一个或多个闭合微腔结构（105）; 在所述接合晶片（104）上形成保护膜（106），并在所述硅衬底（101）的背侧上形成掩模层（107）; 图案化掩模层（107），对应于待形成的大空腔（108）的位置的掩模层（107）的图案; 使用掩模层（107）作为掩模，从背面蚀刻硅衬底（101）直到其前侧的氧化物层在硅衬底（101）中形成大空腔（108）; 并且使用所述掩模层（107）和所述氧化物层作为掩模，通过所述硅衬底（101）从所述背面蚀刻所述接合晶片（104）直到所述保护膜（106）在其上形成一个或多个小空腔 109）。 复合空腔中的小空腔（109）所在的半导体介质层的厚度均匀性由本发明很好地控制。

公开(公告)号：US20160358776A1

公开(公告)日：2016-12-08

申请号：US13686058

申请日：2012-11-27

Applicant: International Business Machines Corporation

Inventor： Michael A. Guillorn ,  Kafai Lai ,  Jed W. Pitera ,  Hsinyu Tsai

IPC: H01L21/033 ,  B81B7/00 ,  H01L21/768 ,  H01L21/311 ,  B81C1/00

CPC classification number: G03F7/0002 ,  B81B7/0006 ,  B81B2203/0353 ,  B81B2207/07 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/0035 ,  G03F7/165 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144

Abstract: After formation of a template layer over a neutral polymer layer, a self-assembling block copolymer material is applied and self-assembled. The template layer includes a first linear portion, a second linear portion that is shorter than the first linear portion, and blocking template structures having a greater width than the second linear portion. The self-assembling block copolymer material is phase-separated into alternating lamellae in regions away from the widthwise-extending portion. The blocking template structures perturb, and cause termination of, the lamellae. A cavity parallel to the first and second linear portions and terminating in self-alignment to the blocking template structures is formed upon selective removal of a polymeric block component. The pattern of the cavity can be inverted and transferred into the material layer to form fins having different lengths.

Abstract translation: 在中性聚合物层上形成模板层之后，自组装嵌段共聚物材料被应用并自组装。 模板层包括第一直线部分，比第一直线部分短的第二直线部分，以及阻挡具有比第二直线部分更大的宽度的模板结构。 自组装嵌段共聚物材料在远离宽度方向延伸部分的区域中相分离成交替的薄片。 阻挡模板结构扰乱并导致薄片的终止。 在选择性去除聚合物嵌段组分时，形成平行于第一和第二直线部分并终止于与阻挡模板结构自对准的空腔。 空腔的图案可以反转并转移到材料层中以形成具有不同长度的翅片。

公开(公告)号：US09508562B2

公开(公告)日：2016-11-29

申请号：US14316988

申请日：2014-06-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ji Xu ,  Richard A. Farrell ,  Gerard M. Schmid ,  Moshe E Preil

IPC: H01L21/3213 ,  H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  H01L21/28 ,  G03F7/00 ,  H01L21/311 ,  C08L53/00 ,  G03F1/00

CPC classification number: H01L21/32139 ,  B81C2201/0198 ,  C08L53/00 ,  C08L53/005 ,  G03F1/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816

Abstract: In one example, a method includes forming a template having a plurality of elements above a process layer and forming spacers on sidewalls of the plurality of elements. Portions of the process layer are exposed between adjacent spacers. At least one of the plurality of elements is removed. A mask structure is formed from a directed self-assembly material over the exposed portions. The process layer is patterned using at least the mask structure as an etch mask.

Abstract translation: 在一个示例中，一种方法包括在工艺层上形成具有多个元件的模板，并在多个元件的侧壁上形成间隔物。 处理层的一部分暴露在相邻间隔物之间​​。 去除多个元件中的至少一个。 掩模结构由暴露部分上的定向自组装材料形成。 使用至少掩模结构作为蚀刻掩模对工艺层进行图案化。

公开(公告)号：US09495991B2

公开(公告)日：2016-11-15

申请号：US14419616

申请日：2013-09-09

Applicant: LG CHEM, LTD. ,  IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Yang Kyoo Han ,  Je Gwon Lee ,  Hyun Jin Lee ,  No Ma Kim ,  Sung Soo Yoon ,  Eun Ji Shin ,  Yeon Sik Jung

IPC: G11B5/855 ,  H01L21/3065 ,  G03F7/00 ,  G11B5/84 ,  G11B5/851 ,  H01L21/027 ,  G11B5/74 ,  B81C1/00 ,  B82Y10/00 ,  B82Y40/00 ,  C08F220/18 ,  C08F220/56

CPC classification number: G11B5/855 ,  B81C1/00396 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y40/00 ,  C08F220/18 ,  C08F220/56 ,  C08F2438/03 ,  G03F7/0002 ,  G11B5/746 ,  G11B5/8404 ,  G11B5/851 ,  H01L21/027 ,  H01L21/3065

Abstract: The present invention relates to a method for forming a silicon oxide nanopattern, in which the method can be used to easily form a nanodot or nanohole-type nanopattern, and a metal nanopattern formed by using the same can be properly applied to a next-generation magnetic recording medium for storage information, etc., a method for forming a metal nanopattern, and a magnetic recording medium for information storage using the same.The method for forming a silicon oxide nanopattern includes the steps of forming a block copolymer thin film including specific hard segments and soft segments containing a (meth)acrylate-based repeating unit on silicon oxide of a substrate; conducting orientation of the thin film; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern.

Abstract translation: 形成氧化硅纳米图案的方法包括以下步骤：在基材的氧化硅上形成包含特定硬链段和含有（甲基）丙烯酸酯基重复单元的软链段的嵌段共聚物薄膜; 导电薄膜的取向; 从嵌段共聚物薄膜中选择性地除去软链段; 并使用去除了软链段的嵌段共聚物薄膜作为掩模进行氧化硅的反应离子蚀刻，以形成氧化硅纳米点或纳米孔图案。

公开(公告)号：US20160202473A1

公开(公告)日：2016-07-14

申请号：US15077105

申请日：2016-03-22

Applicant: SUMITOMO PRECISION PRODUCTS CO., LTD.

Inventor： Ryohei UCHINO ,  Gen MATSUOKA

IPC: G02B26/08 ,  B81B3/00

CPC classification number: B81C1/00492 ,  B81B3/0086 ,  B81B2201/042 ,  B81B2203/0136 ,  B81C1/00404 ,  B81C1/00603 ,  B81C2201/0102 ,  B81C2201/0132 ,  B81C2201/0198 ,  G02B26/0841

Abstract: A mirror device includes a frame body, a mirror configured to tilt about a Y-axis with respect to the frame body, a fixed inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction along the Y-axis and provided at the frame body, and a movable inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction and provided at the mirror, the electrodes fingers of the fixed inner comb electrode and the movable inner comb electrode being alternately arranged. The mirror includes a mirror body and an extension extending from the mirror body. Some of the electrode fingers of the movable inner comb electrode are provided at the mirror body, and another electrode fingers of the movable inner comb electrode are provided at the extension.

Abstract translation: 反射镜装置包括框架体，配置成相对于框架体围绕Y轴倾斜的反射镜，固定的内梳状电极，包括沿着Y轴布置在排列方向上的多个电极指， 框体和可动内梳状电极，其包括沿着排列方向布置并设置在反射镜处的多个电极指，固定内梳电极和可移动​​内梳电极的电极指交替布置。 镜子包括镜体和从镜体延伸的延伸部分。 可动内梳电极的一些电极指设置在镜体上，可移动内梳电极的另一电极指在延伸部处设置。

公开(公告)号：US09340415B2

公开(公告)日：2016-05-17

申请号：US14661830

申请日：2015-03-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James C. Baker ,  Patrick I. Oden ,  Robert S. Black

IPC: B81C1/00

CPC classification number: B81C1/00626 ,  B81B3/001 ,  B81B3/007 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/00198 ,  B81C1/00404 ,  B81C2201/0198

Abstract: A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

Abstract translation: MEMS器件形成有轮廓基底和具有互补轮廓的材料层的相对表面。 在一种制造方法中，在衬底上形成第一光致抗蚀剂层。 使用图案掩模使第一光致抗蚀剂层的选定区域曝光。 第一光致抗蚀剂层的曝光区域被热收缩以用轮廓图案化第一光致抗蚀剂层。 在成型的第一光致抗蚀剂层上形成一层材料。

公开(公告)号：US20150380252A1

公开(公告)日：2015-12-31

申请号：US14316988

申请日：2014-06-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ji Xu ,  Richard A. Farrell ,  Gerard M. Schmid ,  Moshe E. Preil

IPC: H01L21/28 ,  H01L21/3213

CPC classification number: H01L21/32139 ,  B81C2201/0198 ,  C08L53/00 ,  C08L53/005 ,  G03F1/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816

Abstract: In one example, a method includes forming a template having a plurality of elements above a process layer and forming spacers on sidewalls of the plurality of elements. Portions of the process layer are exposed between adjacent spacers. At least one of the plurality of elements is removed. A mask structure is formed from a directed self-assembly material over the exposed portions. The process layer is patterned using at least the mask structure as an etch mask.

Abstract translation: 在一个示例中，一种方法包括在工艺层上形成具有多个元件的模板，并在多个元件的侧壁上形成间隔物。 处理层的一部分暴露在相邻间隔物之间​​。 去除多个元件中的至少一个。 掩模结构由暴露部分上的定向自组装材料形成。 使用至少掩模结构作为蚀刻掩模对工艺层进行图案化。

公开(公告)号：US20150266727A1

公开(公告)日：2015-09-24

申请号：US14661830

申请日：2015-03-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James C. Baker ,  Patrick I. Oden ,  Robert S. Black

IPC: B81C1/00

CPC classification number: B81C1/00626 ,  B81B3/001 ,  B81B3/007 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/00198 ,  B81C1/00404 ,  B81C2201/0198

Abstract: A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

Abstract translation: MEMS器件形成有轮廓基底和具有互补轮廓的材料层的相对表面。 在一种制造方法中，在衬底上形成第一光致抗蚀剂层。 使用图案掩模使第一光致抗蚀剂层的选定区域曝光。 第一光致抗蚀剂层的曝光区域被热收缩以用轮廓图案化第一光致抗蚀剂层。 在成型的第一光致抗蚀剂层上形成一层材料。

公开(公告)号：US20150192486A1

公开(公告)日：2015-07-09

申请号：US14543074

申请日：2014-11-17

Applicant: Honeywell International Inc.

Inventor： Carl Stewart ,  Richard Davis ,  Gilberto Morales

IPC: G01L9/00 ,  B81B3/00 ,  B81C1/00 ,  G01L7/08

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/014 ,  B81C2201/0198 ,  B81C2203/0728 ,  G01L7/08 ,  G01L9/0042 ,  G01L9/0044 ,  G01L9/0047 ,  G01L9/0054 ,  G01L9/0055

Abstract: A pressure sensor having a diaphragm having a boss with a pattern. The diaphragm having a boss may be regarded as a bossed diaphragm. The bossed diaphragm may have higher sensitivity than a flat plate diaphragm having the same area as the bossed diaphragm. The bossed diaphragm may incorporate a simple cross pattern that can further improve the sensitivity and linearity of a pressure response of the diaphragm at low pressures. Reduction of sharp edges and corners of the boss and its legs around the periphery of the diaphragm may reduce high stress points and thus increase the burst pressure rating of the bossed diaphragm.

Abstract translation: 一种压力传感器，具有具有带图案的凸台的隔膜。 具有凸台的隔膜可以被认为是凸起的隔膜。 凸起的隔膜可能具有比具有与凸起隔膜相同面积的平板隔膜更高的灵敏度。 凸起的隔膜可以包括简单的交叉图案，其可以进一步提高隔膜在低压下的压力响应的灵敏度和线性。 凸起及其围绕隔膜周边的腿的尖锐边缘和拐角的减小可能会降低高应力点，从而提高凸起隔膜的爆破压力等级。

公开(公告)号：US09006845B2

公开(公告)日：2015-04-14

申请号：US13743300

申请日：2013-01-16

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe

IPC: H01L29/84 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00325 ,  B81B3/0072 ,  B81B2201/0257 ,  B81C1/00158 ,  B81C1/00182 ,  B81C2201/013 ,  B81C2201/0159 ,  B81C2201/0198

Abstract: A MEMS device, a method of making a MEMS device and a system of a MEMS device are shown. In one embodiment, a MEMS device includes a first polymer layer, a MEMS substrate disposed on the first polymer layer and a MEMS structure supported by the MEMS substrate. The MEMS device further includes a first opening disposed in the MEMS substrate and a second opening disposed in the first polymer layer.

Abstract translation: 示出了MEMS器件，制造MEMS器件的方法和MEMS器件的系统。 在一个实施例中，MEMS器件包括第一聚合物层，设置在第一聚合物层上的MEMS衬底和由MEMS衬底支撑的MEMS结构。 MEMS器件还包括设置在MEMS衬底中的第一开口和设置在第一聚合物层中的第二开口。