公开(公告)号：US20180002163A1

公开(公告)日：2018-01-04

申请号：US15543700

申请日：2016-01-14

Applicant: Motion Engine Inc.

Inventor： Robert Mark Boysel

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0118 ,  G01C19/5783 ,  G01C21/16

Abstract: A three dimensional (3D) micro-electro-mechanical system (MEMS) device is provided. The device comprises a central MEMS wafer, and top and bottom cap wafers. The MEMS wafer includes a MEMS structure, such as an inertial sensor. The 5 top cap wafer, the bottom cap wafer and the MEMS wafers are stacked along a stacking axis and together form at least one hermetic cavity enclosing the MEMS structure. At least one of the top cap wafer and the bottom cap wafer is a silicon-on- insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer. At 10 least one electrically conductive path extends through the SOI cap wafer, establishing an electrical convection between an outer electrical contact provided on the SOI cap wafer and the MEMS structure.

公开(公告)号：US09850125B2

公开(公告)日：2017-12-26

申请号：US15041886

申请日：2016-02-11

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81B7/02 ,  B81C1/00 ,  H01L23/00 ,  H01L23/10 ,  H01L25/00

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C1/00238 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/0792 ,  H01L23/10 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/291 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/32145 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/1461 ,  H01L2224/3012 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/00

Abstract: A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure.

公开(公告)号：US20170341929A1

公开(公告)日：2017-11-30

申请号：US15541653

申请日：2015-02-24

Applicant: Mitsubishi Electric Corporation

Inventor： Mika OKUMURA

IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125

CPC classification number: B81B3/0051 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C1/00825 ,  B81C2201/0109 ,  B81C2201/013 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/084 ,  G01P2015/0871

Abstract: A semiconductor device includes a substrate, a beam, a movable structural body, a first stopper member, a second stopper member and a third stopper member. The first stopper member is arranged with a first gap from the movable structural body in an in-plane direction. The second stopper member is arranged with a second gap from the movable structural body in an out-of-plane direction. The third stopper member is arranged opposite to the second stopper member with the movable structural body interposed therebetween in the out-of-plane direction, and is arranged with a third gap from the movable structural body. Consequently, there can be provided a semiconductor device in which excessive displacement of the movable structural body can be suppressed to thereby suppress damage to and breakage of the beam supporting the movable structural body, and a method of manufacturing the same.

公开(公告)号：US09815690B2

公开(公告)日：2017-11-14

申请号：US15212888

申请日：2016-07-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. Herrin ,  Jeffrey C. Maling ,  Anthony K. Stamper

IPC: H05K3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  B81B3/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US20170313576A1

公开(公告)日：2017-11-02

申请号：US15652960

申请日：2017-07-18

Applicant: Foresee Technology Corp.

Inventor： Chien-Chang CHEN ,  Yi-Der LIANG ,  Shiao-Yi LIN ,  Cheng-Kuang YANG

IPC: B81B3/00 ,  B81C1/00 ,  H04R19/00 ,  H04R19/04

CPC classification number: B81B3/0054 ,  B81B3/0078 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0361 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2203/0714 ,  B81C2203/0735 ,  H04R19/005 ,  H04R19/04

Abstract: The present invention disclosed a micro acoustic collector with a lateral cavity, comprising: a base metal layer; a movable film, an annular side wall; a lateral metal layer. The movable film faces towards the base metal layer to form a hollow space. The lateral metal layer is formed at a side of the movable film and around the movable film, fixed by the annular side wall and spaced apart from peripheral of the movable film by a distance, and the lateral metal layer faces towards the base metal layer to form a lateral cavity to assist an acoustic collection.

公开(公告)号：US20170297904A1

公开(公告)日：2017-10-19

申请号：US15205619

申请日：2016-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiang-Chi Lin ,  Jung-Huei Peng ,  Yu-Chia Liu ,  Yi-Chien Wu

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/04 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00285 ,  B81C2201/013 ,  B81C2201/016 ,  B81C2203/0109 ,  B81C2203/035 ,  B81C2203/0714 ,  B81C2203/0792

Abstract: A microelectromechanical systems (MEMS) package with high gettering efficiency is provided. A MEMS device is arranged over a logic chip, within a cavity that is hermetically sealed. A sensing electrode is arranged within the cavity, between the MEMS device and the logic chip. The sensing electrode is electrically coupled to the logic chip and is a conductive getter material configured to remove gas molecules from the cavity. A method for manufacturing the MEMS package is also provided.

公开(公告)号：US20170297895A1

公开(公告)日：2017-10-19

申请号：US15097808

申请日：2016-04-13

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Mohsin Nawaz ,  Alfons Dehe ,  Heiko Froehlich ,  Alessia Scire ,  Steffen Bieselt

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81C1/00166 ,  B81C1/00182 ,  B81C2201/013

Abstract: According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.

公开(公告)号：US09758364B2

公开(公告)日：2017-09-12

申请号：US15162027

申请日：2016-05-23

Applicant: Honeywell International Inc.

Inventor： Gordon A. Shaw ,  Daniel Baseman ,  Chris Finn ,  Jim G. Hunter

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/013 ,  B81C2201/0197

Abstract: Microstructure plating systems and methods are described herein. One method includes depositing a plating-resistant material between a microstructure and a bonding layer, wherein the microstructure comprises a plating process base material and immersing the microstructure in a plating solution.

公开(公告)号：US20170191167A1

公开(公告)日：2017-07-06

申请号：US15465172

申请日：2017-03-21

Applicant: General Electric Company

Inventor： Christopher James Kapusta ,  Marco Francesco Aimi

IPC: C23C28/02 ,  C23F1/00 ,  B23K1/00 ,  B23K35/02 ,  B23K35/30 ,  B81C1/00 ,  C23C14/02 ,  C23C14/16 ,  C23C14/34 ,  C23C14/58 ,  C25D3/50 ,  C25D7/12 ,  C23F4/00 ,  B23K35/26

CPC classification number: C23C28/023 ,  B23K1/0016 ,  B23K35/0222 ,  B23K35/262 ,  B23K35/3013 ,  B23K2101/40 ,  B81C1/00269 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/037 ,  C23C14/025 ,  C23C14/165 ,  C23C14/3414 ,  C23C14/58 ,  C23C28/021 ,  C23F1/00 ,  C23F4/00 ,  C25D3/50 ,  C25D7/123

Abstract: A non-magnetic lid for sealing a hermetic package. The lid includes a molybdenum substrate having a sputtered adhesion layer and a copper seed layer. The lid also includes a plated palladium solder base layer, and has a gold/tin solder preform attached to a sealing surface of the lid.

公开(公告)号：US20170140943A1

公开(公告)日：2017-05-18

申请号：US15318702

申请日：2015-05-29

Applicant: Robert Bosch GmbH

Inventor： Simon Armbruster ,  Benjamin Steuer ,  Stefan Pinter ,  Dietmar Haberer ,  Jochen Tomaschko

IPC: H01L21/48 ,  B81B1/00 ,  B81C1/00

CPC classification number: H01L21/4803 ,  B81B1/00 ,  B81B2203/0315 ,  B81B2203/033 ,  B81B2203/0384 ,  B81C1/00103 ,  B81C1/0042 ,  B81C2201/013 ,  H01L21/3083

Abstract: A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.