Abstract:
A feedthrough capacitor has: a capacitor element body of a substantially rectangular parallelepiped shape in which a plurality of insulator layers are laminated together; a signal internal electrode arranged in the capacitor element body; a ground internal electrode arranged in the capacitor element body and opposed to the signal internal electrode; signal terminal electrodes connected to the signal internal electrode; and a ground terminal electrode connected to the ground internal electrode. The signal terminal electrodes are provided on first and second end faces, respectively, in a longitudinal direction of the capacitor element body. The ground terminal electrode is provided on at least one side face out of first to fourth side faces extending along the longitudinal direction of the capacitor element body. Furthermore, the ground terminal electrode is located nearer at least one end face out of the first end face and the second end face.
Abstract:
A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.
Abstract:
A wiring board (10) of the present invention includes: a through hole (11b), provided in a semiconductor chip mounted region (15), penetrating the wiring board (10); and a groove pattern (13), provided on a solder resist (9) formed on the semiconductor chip mounted region (15), leading to the through hole (11b). The foregoing configuration makes it possible to guide, via the groove pattern (13) to the through hole (11b), moisture that collects in the semiconductor chip mounted region (15) and therefore to effectively discharge the moisture from the semiconductor chip mounted region (15). Thus, a semiconductor device (30) that employs the wiring board (10) does not suffer from vaporization and expansion, inside of it, due to heat that is applied at the time of manufacturing the semiconductor device (30) and at the time of mounting the semiconductor device (30) on a mount substrate. It is therefore possible to reduce expansion of the semiconductor device.
Abstract:
A printed board is mounted with a chip-type solid electrolytic capacitor of a four-terminal structure where a pair of positive electrode terminals are disposed at opposite positions and a pair of negative electrode terminals are disposed at opposite positions on a mounting surface. The printed board has a pair of positive electrode patterns and a pair of negative electrode patterns to which the positive electrode terminals and negative electrode terminals of the chip-type solid electrolytic capacitor are connected, respectively. The printed board further has an inductor section that is insulated from the negative electrode patterns, and electrically connects the positive electrode patterns.
Abstract:
Aspects of the present invention include a system and method for improving the reliability performance of hard disk drives by routing the traces connected to the slider from the trailing edge to the leading edge and having a portion of the traces being under the magnetic slider. Aspects of the present invention can also include routing the traces in a manner that lessens the stress experienced during vibration or shock events.
Abstract:
A printed circuit board (PCB) reduces a simultaneous switching noise (SSN) causing power noise, thereby reducing radiated electromagnetic interference (EMI). In a double-layered PCB, a first substrate is arranged in parallel with a second substrate while being spaced apart from the second substrate by a predetermined distance. The first substrate includes a ground plane, which is deposited over an entirety of the first substrate. The second substrate includes a power plane deposited at a position of a component mounted to the printed circuit board (PCB) to transmit power to the component. Thus, the power trace of the PCB is simplified in structure, thereby reducing EMI radiation noise.
Abstract:
A printed circuit board (PCB) and a semiconductor package that are configured to prevent delamination and voids. In one example embodiment, the semiconductor package includes a PCB having a base substrate on which conductive patterns are formed and which includes an interior region having a die paddle for receiving a semiconductor chip and an exterior region disposed outside the interior region. The PCB also includes a first solder resist formed on a portion of the base substrate corresponding to the interior region and a second solder resist formed on a portion of the base substrate corresponding to the exterior region. The second solder resist may also have a greater surface roughness than the surface roughness of the first solder resist.
Abstract:
A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.
Abstract:
A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.
Abstract:
The invention provides a method and device for building one or more passive components into a chip scale package. The method includes the steps of selecting a passive component having a terminal pitch that is a multiple of the package ball pitch of a chip scale package and mounting the selected passive component terminals to ball sites of the package. A preferred embodiment of the invention uses a single metal layer polyamide tape as the substrate of the package. Additional preferred embodiments of the invention are disclosed in which the terminal pitch multiple of the package ball pitch is one or two. Devices corresponding to the disclosed methods are also disclosed.