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公开(公告)号：US20240351865A1
公开(公告)日：2024-10-24
申请号：US18622059
申请日：2024-03-29
Applicant: Xintec Inc.
Inventor： Jiun-Yen LAI , Wei-Luen SUEN , Ming-Chung CHUNG , Chih-Wei LIU
IPC: B81C1/00
CPC classification number: B81C1/00825 , B81C2201/013 , B81C2201/0143 , B81C2201/0146 , B81C2201/0159
Abstract: A manufacturing method of a micro electro mechanical system (MEMS) device includes forming a buffer protection layer on a semiconductor structure, wherein the semiconductor structure includes a wafer, a MEMS membrane, and an isolation layer between the wafer and the MEMS membrane, and the buffer protection layer is located in a slit of the MEMS membrane and on a surface of the MEMS membrane facing away from the isolation layer; etching the wafer to form a cavity such that a portion of the isolation layer is exposed though the cavity; etching the portion of the isolation layer; and removing the buffer protection layer.
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172.发明公开公开(公告)号：US20240208801A1
公开(公告)日：2024-06-27
申请号：US17747879
申请日：2022-05-18
Applicant: UPBEAT TECHNOLOGY Co., Ltd
Inventor： Hsi-Wen TUNG , Hsien-Lung HO
CPC classification number: B81B3/0021 , B81C1/00182 , B81B2201/0257 , B81B2201/0285 , B81B2203/0315 , B81B2203/0353 , B81C2201/013 , B81C2201/0159 , B81C2201/053
Abstract: A MEM vibration sensor includes a substrate and a sensing-device. The substrate includes a first supporting-portion and a cavity. The sensing-device includes a first sensing-unit, a second sensing-unit, a first metal pad and a second metal pad. The first sensing-unit includes a second supporting-portion and a vibrating-portion. The second supporting-portion is located on the first supporting-portion and is connected to the first supporting-portion via a first dielectric material. The vibrating-portion is located on the cavity, and is connected with the second supporting-portion through an elastic connecting-portion. The second sensing-unit is located on the first sensing-unit and includes a sensing-portion and a third supporting-portion. The sensing-portion is located on the vibrating-portion and has a gap with the vibrating-portion. The third supporting-portion is located on the second supporting-portion, is connected to the sensing-portion, and is connected to the second supporting-portion through a second dielectric material.
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173.发明授权公开(公告)号：US11975964B2
公开(公告)日：2024-05-07
申请号：US17446245
申请日：2021-08-27
Applicant: Robert Bosch GmbH
Inventor： Jochen Reinmuth , Ralf Boessendoerfer
IPC: B81C1/00
CPC classification number: B81C1/00476 , B81C2201/013
Abstract: A method for manufacturing a microelectromechanical structure. The method includes: forming a first and a second functional layer including recesses, a third functional layer, and three insulating layers situated therebetween, a structured lateral area of the third functional layer defining a movable structure, the insulating layers and the first and second functional layers each including a lateral area situated beneath the structured lateral area of the third functional layer and corresponding to a perpendicular projection of the structured lateral area; etching the insulating layers to remove the lateral area of the third insulating layer, and expose the movable structure, all recesses of the first functional layer situated in the lateral area of the first functional layer being formed by narrow trenches, the first functional layer being formed to include an electrically insulated segment in the lateral area which is separated from the remainder of the first functional layer by trenches.
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公开(公告)号：US11944965B2
公开(公告)日：2024-04-02
申请号：US16880247
申请日：2020-05-21
Applicant: IMEC VZW
Inventor： Giuseppe Fiorentino , Simone Severi , Aurelie Humbert
CPC classification number: B01L3/502715 , B01L3/502707 , B29C65/02 , B81C1/00119 , B01L2200/10 , B01L2300/0838 , B01L2300/0887 , B81C2201/013 , B81C2203/03 , B81C2203/031 , B81C2203/036
Abstract: A microfluidic device, a diagnostic device including the microfluidic device and a method for making the microfluidic device are provided. The microfluidic device includes: (i) a transparent substrate comprising a cavity, the cavity opening up to a top of the transparent substrate; (ii) a transparent layer covering the cavity, and (iii) a semiconductor substrate over the transparent layer and the transparent substrate, wherein the semiconductor substrate comprises a through hole overlaying the cavity and exposing the transparent layer.
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公开(公告)号：US20230399226A1
公开(公告)日：2023-12-14
申请号：US17835175
申请日：2022-06-08
Inventor： Fan Hu , Wen-Chuan Tai , Li-Chun Peng , Hsiang-Fu Chen , Ching-Kai Shen , Hung-Wei Liang , Jung-Kuo Tu
CPC classification number: B81B7/008 , B81C3/001 , B81C2201/013 , B81B2203/033 , B81B2207/015
Abstract: The present disclosure relates to an integrated chip including a semiconductor device substrate and a plurality of semiconductor devices arranged along the semiconductor device substrate. A micro-electromechanical system (MEMS) layer overlies the semiconductor device substrate. The MEMS layer includes a first moveable mass and a second moveable mass. A capping layer overlies the MEMS layer. The capping layer has a first lower surface directly over the first moveable mass and a second lower surface directly over the second moveable mass. An outgas layer is on the first lower surface and directly between the first pair of sidewalls. A lower surface of the outgas layer delimits a first cavity in which the first moveable mass is arranged. The second lower surface of the capping layer delimits a second cavity in which the second moveable mass is arranged.
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Patent Agency Ranking
公开(公告)号：US11833542B2
公开(公告)日：2023-12-05
申请号：US16562821
申请日：2019-09-06
Applicant: BFLY Operations, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC classification number: B06B1/02 , B06B1/0292 , B81B3/0021 , B81B7/0077 , B81C1/00158 , G10K9/12 , G10K11/18 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771
Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号：US11772963B2
公开(公告)日：2023-10-03
申请号：US17524140
申请日：2021-11-11
Inventor： Chih-Hang Chang , I-Shi Wang , Jen-Hao Liu
CPC classification number: B81C1/00238 , B81C1/00269 , B81C1/00888 , B81C3/005 , B81C2201/013 , B81C2201/0143 , B81C2201/0146 , B81C2203/035
Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.
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公开(公告)号：US11766696B2
公开(公告)日：2023-09-26
申请号：US16784186
申请日：2020-02-06
Applicant: BFLY Operations, Inc.
Inventor： Lingyun Miao , Jianwei Liu , Jonathan M. Rothberg
CPC classification number: B06B1/0292 , H10N30/06 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81C2201/0101 , B81C2201/013 , B81C2201/0147 , B81C2201/0174 , B81C2203/0714
Abstract: A method of forming an ultrasonic transducer device includes forming a patterned metal electrode layer over a substrate, the patterned metal electrode layer comprising a lower layer and an upper layer formed on the lower layer; forming an insulation layer over the patterned metal electrode layer; and planarizing the insulation layer to the upper layer of the patterned metal electrode layer, wherein the upper layer comprises a electrically conductive material that serves as a chemical mechanical polishing (CMP) stop layer that has CMP selectivity with respect to the insulation layer and the lower layer, and wherein the upper layer has a CMP removal rate slower than that of the insulation layer.
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公开(公告)号：US11696078B2
公开(公告)日：2023-07-04
申请号：US17879454
申请日：2022-08-02
Applicant: QUALCOMM Technologies, Inc.
Inventor： Craig Core , Hamid Basaeri , Robert Littrell
CPC classification number: H04R19/04 , B81B3/0021 , B81C1/00158 , H04R1/04 , H04R7/06 , H04R19/005 , H04R31/003 , B81B2201/0257 , B81B2203/019 , B81B2203/0127 , B81B2203/0315 , B81B2207/012 , B81C2201/013 , H04R2201/003
Abstract: A robust MEMS transducer includes a kinetic energy diverter disposed within its frontside cavity. The kinetic energy diverter blunts or diverts kinetic energy in a mass of air moving through the frontside cavity, before that kinetic energy reaches a diaphragm of the MEMS transducer. The kinetic energy diverter renders the MEMS transducer more robust and resistant to damage from such a moving mass of air.
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公开(公告)号：US11685647B2
公开(公告)日：2023-06-27
申请号：US17188849
申请日：2021-03-01
Applicant: NXP B.V.
Inventor： Mark Douglas Hall , Tushar Praful Merchant , Anirban Roy
IPC: B81C1/00
CPC classification number: B81C1/00031 , B81C1/00166 , B81C1/00349 , B81C2201/013
Abstract: A nanosheet MEMS sensor device and method are described for integrating the fabrication of nanosheet transistors (61) and MEMS sensors (62) in a single nanosheet process flow by forming separate nanosheet transistor and MEMS sensor stacks (12A-16A, 12B-16B) of alternating Si and SiGe layers which are selectively processed to form gate electrodes (49A-C) which replace the silicon germanium layers in the nanosheet transistor stack, to form silicon fixed electrodes using silicon layers (13B-2, 15B-2) on a first side of the MEMS sensor stack, and to form silicon cantilever electrodes using silicon layers (13B-1, 15B-1) on a second side of the MEMS sensor stack by forming a narrow trench opening (54) in the MEMS sensor stack to expose and remove remnant silicon germanium layers on the second side in the MEMS sensor stack.
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