Method of providing electrical interconnect between two layers within a
silicon substrate, semiconductor apparatus, and method of forming
apparatus for testing semiconductor circuitry for operability
    171.
    发明授权
    Method of providing electrical interconnect between two layers within a silicon substrate, semiconductor apparatus, and method of forming apparatus for testing semiconductor circuitry for operability 失效
    在硅衬底内的两层之间提供电互连的方法,半导体装置以及用于测试半导体电路的可操作性的装置的方法

    公开(公告)号:US5419807A

    公开(公告)日:1995-05-30

    申请号:US223642

    申请日:1994-04-06

    Abstract: A method is disclosed of forming a high elevation area and a low elevation area in a substrate and of electrically interconnecting the high elevation area and the low elevation area. The method includes anisotropically etching into a non-masked portion of monocrystalline silicon in a selective manner of one silicon plane relative to another silicon plane to produce a high elevation area and a low elevation area which are laterally angled relative to one another. The high elevation area and the low elevation area thereby interconnected by a substantially planar, non-perpendicularly angled surface. Such areas and plane are then doped to form a continuous electrically conductive and interconnecting diffusion region extending from the high elevation area, through and along the angled surface to the low elevation area. A semiconductor apparatus having the above construction is also disclosed. Also disclosed is an epitaxial silicon growth and etching process, and a semiconductor apparatus having multiple different monocrystalline silicon portions. Further disclosed is a method of producing a testing apparatus having a projection formed essentially of electrically conductive polysilicon.

    Abstract translation: 公开了一种在衬底中形成高仰角区域和低仰角区域并将高高度区域和低仰角区域电连接的方法。 该方法包括以相对于另一硅平面的一个硅平面的选择性方式各向异性蚀刻成单晶硅的非掩模部分,以产生相对于彼此横向成角度的高仰角区域和低仰角区域。 因此,高仰角区域和低仰角区域通过基本上平面的非垂直成角度的表面相互连接。 然后将这样的区域和平面掺杂以形成从高仰角区域延伸穿过且沿着倾斜表面延伸到低仰角区域的连续的导电和互连扩散区域。 还公开了具有上述结构的半导体装置。 还公开了外延硅生长和蚀刻工艺,以及具有多个不同单晶硅部分的半导体器件。 还公开了一种制造具有基本上由导电多晶硅形成的突起的测试装置的方法。

    Solder reflow mounting board
    173.
    发明授权
    Solder reflow mounting board 失效
    焊接回流安装板

    公开(公告)号:US5373113A

    公开(公告)日:1994-12-13

    申请号:US53699

    申请日:1993-04-29

    Applicant: Hideki Ishii

    Inventor: Hideki Ishii

    Abstract: A process for reflow mounting an electronic component includes coating a terminal electrode on a mounting board with a second solder having a second melting point higher than a reflow temperature, placing the mounting board with the electronic component on a mounting land on a conveyor which may be brought into contact with the second solder on the terminal electrode, and heating the mounting board to the reflow temperature. The terminal electrode may be coated with a solder repelling material at a selected dividing area effective for dividing the terminal electrode into a plurality of sections substantially isolated from each other in terms of solder flow. Alternatively, a mounting jig may be used for supporting the mounting board without bringing the second solder on the terminal electrode into contact with the mounting jig.

    Abstract translation: 一种用于回流焊安装电子部件的工艺包括:在具有第二熔点高于回流温度的第二焊料的安装板上涂覆端子电极,将具有电子部件的安装板放置在可以是 与端子电极上的第二焊料接触,并将安装板加热到回流温度。 端子电极可以在选择的分割区域涂覆有排斥材料,其有效地将端子电极分成在焊料流动方面彼此基本隔离的多个部分。 或者,可以使用安装夹具来支撑安装板,而不使端子电极上的第二焊料与安装夹具接触。

    Method of fabricating a parallel processor package
    174.
    发明授权
    Method of fabricating a parallel processor package 失效
    制造并行处理器封装的方法

    公开(公告)号:US5346117A

    公开(公告)日:1994-09-13

    申请号:US97604

    申请日:1993-07-27

    Abstract: Disclosed is a method for manufacturing a stacked circuitized flex structure. The structure is a laminate for Z-axis communication within a parallel processor. This laminate portion provides XY plane and Z-axis interconnection for inter-processor, inter-memory, inter-processor/memory element, and processor to memory bussing interconnection, and communication. Z-axis circuitization is carried out by providing vias and through holes in individual circuitized flex strips. These vias and through holes are circuited and plated. This is followed by filling the vias and through holes with solder and forming solder bumps at the tops and bottoms of the vias and through holes. A sticker sheet with clearance holes for the solder bumps is provided, and a plurality of the circuitized flex strips are laid up for lamination to form a stack of circuitized flexible strips. Lamination is carried out at elevated pressure and temperature to crush the solder bumps, bond, and homogenize solder bump material and fuse the sticker sheets. Next, the stack is cooled to solidify the homogenized solder bump material.

    Abstract translation: 公开了一种用于制造堆叠电路化柔性结构的方法。 该结构是在并行处理器内用于Z轴通信的层压板。 该层压部分为处理器间,存储器间,处理器间/存储器元件以及处理器到存储器总线互连和通信提供XY平面和Z轴互连。 通过在单独的电路化柔性条中设置通孔和通孔来进行Z轴电路化。 这些通孔和通孔被循环和电镀。 然后在通孔和通孔的顶部和底部填充通孔和通孔用焊料和形成焊料凸块。 提供了具有用于焊料凸块的间隙孔的贴纸,并且堆叠多个电路化的柔性条以层压以形成电路化的柔性条的堆叠。 层压在升高的压力和温度下进行,以粉碎焊料凸块,粘合和均质焊料凸块材料并熔合贴纸。 接下来,将堆叠冷却以固化均质化的焊料凸块材料。

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