公开(公告)号：US20230253462A1

公开(公告)日：2023-08-10

申请号：US18107684

申请日：2023-02-09

Applicant: FLOSFIA INC. ,  MIRISE Technologies Corporation ,  DENSO CORPORATION

Inventor： Takashi SHINOHE ,  Hiroyuki ANDO ,  Yasushi HIGUCHI ,  Shinpei MATSUDA ,  Kazuya TANIGUCHI ,  Hiroki WATANABE ,  Hideo MATSUKI

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/04 ,  H01L29/78 ,  C01G55/00 ,  C30B29/68 ,  C30B29/24

CPC classification number: H01L29/24 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02483 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02565 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/045 ,  H01L21/02609 ,  H01L29/7813 ,  C01G55/002 ,  C30B29/68 ,  C30B29/24 ,  C01P2002/50 ,  C01P2006/40 ,  C01P2006/32 ,  C01P2002/72

Abstract: Provided is a crystalline oxide film including: a plane tilted from a c-plane as a principal plane; gallium; and a metal in Group 9 of the periodic table, the metal in Group 9 of the periodic table among all metallic elements in the film having an atomic ratio of equal to or less than 23%.

公开(公告)号：US11594601B2

公开(公告)日：2023-02-28

申请号：US16764622

申请日：2018-11-15

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Masahiro Sugimoto ,  Takashi Shinohe

IPC: H01L29/24 ,  C23C16/40 ,  H01L21/02 ,  H01L21/443 ,  H01L21/465 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H02M3/335

Abstract: A semiconductor apparatus capable of reducing the leakage current in the reverse direction, and keeping characteristics thereof, even when using n type semiconductor (gallium oxide, for example) or the like having a low-loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC is provided. A semiconductor apparatus includes a crystalline oxide semiconductor having a corundum structure as a main component, and an electric field shield layer and a gate electrode that are respectively laminated directly or through other layers on the n type semiconductor layer, wherein the electric field shield layer includes a p type oxide semiconductor, and is embedded in the n type semiconductor layer deeper than the gate electrode.

公开(公告)号：US11495695B2

公开(公告)日：2022-11-08

申请号：US17259630

申请日：2019-07-10

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe ,  Koji Amazutsumi

IPC: H01L29/24 ,  H01L29/872 ,  C23C16/40 ,  H01L21/02 ,  H01L29/66 ,  H02M3/335

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

公开(公告)号：US11462746B2

公开(公告)日：2022-10-04

申请号：US15941165

申请日：2018-03-30

Applicant: FLOSFIA INC.

Inventor： Shingo Yagyu ,  Takuto Igawa ,  Toshimi Hitora

IPC: H01M8/0228 ,  H01M8/026 ,  H01M8/0206 ,  C23C16/448 ,  C23C16/40 ,  H01M8/0215 ,  H01M8/10 ,  H01M8/021

Abstract: In a first aspect of a present inventive subject matter, a multilayer structure includes a base with a surface and an electrically-conductive metal oxide film that is positioned directly or via another layer on the base. At least a part of the surface of the base contains as a major component at least one selected from the group of copper, copper alloy, aluminum, aluminum alloy, magnesium, magnesium alloy, and stainless steel. The electrically-conductive metal oxide film is 30 nm or more in thickness. The multilayer structure is electrically-conductive and has a contact resistance that is 100 mΩcm2 or less.

公开(公告)号：US11424320B2

公开(公告)日：2022-08-23

申请号：US16313272

申请日：2017-06-30

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo Fujita ,  Kentaro Kaneko ,  Toshimi Hitora ,  Tomochika Tanikawa

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L29/24 ,  H01L29/739 ,  H01L29/12 ,  H02M3/28 ,  H01L33/26

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

公开(公告)号：US20220231174A1

公开(公告)日：2022-07-21

申请号：US17711342

申请日：2022-04-01

Applicant: FLOSFIA INC.

Inventor： Osamu IMAFUJI

IPC: H01L29/872 ,  H01L29/66 ,  H01L29/47

Abstract: Provided is a semiconductor element including at least a multilayer structure including a semiconductor layer, a first metal layer, a second metal layer and a third metal layer, the semiconductor layer including an oxide semiconductor film, the first metal layer, the second metal layer and the third metal layer being arranged on the semiconductor layer, the first metal layer, the second metal layer and the third metal layer respectively including one or two or more different metals, the first metal layer being in ohmic contact with the semiconductor layer, the second metal layer being disposed between the first metal layer and the third metal layer, and the second metal layer containing Pt or/and Pd.

公开(公告)号：US20220140083A1

公开(公告)日：2022-05-05

申请号：US17573790

申请日：2022-01-12

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO

IPC: H01L29/12 ,  C23C16/40 ,  H01L29/778 ,  H01L29/812 ,  H01L29/808 ,  H01L29/872 ,  H01L33/26 ,  H01L29/739

Abstract: A first raw material solution containing at least aluminum is atomized to generate first atomized droplets and a second raw material solution containing at least gallium and a dopant is atomized to generate second atomized droplets, and subsequently, the first atomized droplets are carried into a film forming chamber using a first carrier gas and the second atomized droplets are carried into the film forming chamber using a second carrier gas, and then the first atomized droplets and the second atomized droplets are mixed in the film forming chamber, and the mixed atomized droplets are thermally reacted in the vicinity of a surface of the base to form an oxide semiconductor film on the base, the oxide semiconductor film including, as a major component, a metal oxide containing at least aluminum and gallium, wherein the oxide semiconductor film has a mobility of no less than 5 cm2/Vs.

公开(公告)号：US20210335609A1

公开(公告)日：2021-10-28

申请号：US17239986

申请日：2021-04-26

Applicant: FLOSFIA INC.

Inventor： Yuichi OSHIMA ,  Katsuaki KAWARA

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/24 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16

Abstract: A high-quality crystalline film having less impurity of Si and the like and useful in semiconductor devices is provided. A crystalline film containing a crystalline metallic oxide including gallium as a main component, wherein the crystalline film includes a Si in a content of 2×1015 cm−3 or less.

公开(公告)号：US11088242B2

公开(公告)日：2021-08-10

申请号：US16981550

申请日：2020-03-30

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Takahiro Sasaki ,  Toshimi Hitora ,  Isao Takahashi

IPC: C30B29/22 ,  H01L29/04 ,  H01L29/24 ,  H01L21/02 ,  H01C7/04 ,  H01L29/872 ,  H01L29/78 ,  H01C7/02

Abstract: As an aspect of an embodiment, a crystal contains a metal oxide containing Ga and Mn and having a corundum structure.

公开(公告)号：US11069781B2

公开(公告)日：2021-07-20

申请号：US16534318

申请日：2019-08-07

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/772 ,  H01L29/808 ,  H01L29/78 ,  H01L29/872 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/812 ,  H01L33/44 ,  H01L33/26 ,  H01L33/00

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.