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公开(公告)号：US10580620B2
公开(公告)日：2020-03-03
申请号：US15199068
申请日：2016-06-30
Applicant: Applied Materials, Inc.
Inventor： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
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公开(公告)号：US10535502B2
公开(公告)日：2020-01-14
申请号：US15198969
申请日：2016-06-30
Applicant: Applied Materials, Inc.
Inventor： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
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公开(公告)号：US10453656B2
公开(公告)日：2019-10-22
申请号：US15198993
申请日：2016-06-30
Applicant: Applied Materials, Inc.
Inventor： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
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公开(公告)号：US20190085467A1
公开(公告)日：2019-03-21
申请号：US16195670
申请日：2018-11-19
Applicant: Applied Materials, Inc.
Inventor： Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , James D. Carducci , Douglas A. Buchberger, Jr. , Ankur Agarwal , Jason A. Kenney , Leonid Dorf , Ajit Balakrishna , Richard Fovell
Abstract: A plasma reactor for processing a workpiece includes a reactor chamber having a ceiling and a sidewall and a workpiece support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.
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公开(公告)号：US09741546B2
公开(公告)日：2017-08-22
申请号：US13629267
申请日：2012-09-27
Applicant: Applied Materials, Inc.
Inventor： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
IPC: C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , H05H1/46
CPC classification number: H01J37/3244 , H01J37/32082 , H01J37/32091 , H01J37/32495 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01J37/32733 , H01J37/32743 , H01J37/32834 , H01J2237/3321 , H01J2237/3323 , H01J2237/3344 , H05H1/46
Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
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Patent Agency Ranking
16.发明授权Plasma processing system including a symmetrical remote plasma source for minimal ion energy 有权等离子体处理系统包括用于最小离子能量的对称远程等离子体源公开(公告)号：US09449796B2
公开(公告)日：2016-09-20
申请号：US14523177
申请日：2014-10-24
Applicant: APPLIED MATERIALS, INC.
Inventor： Ankur Agarwal , Ajit Balakrishna , Rajinder Dhindsa
CPC classification number: H01J37/3244 , H01J37/32357 , H01J37/32541 , H05H1/46 , H05H2001/466
Abstract: A remote plasma source is enclosed by a pair of counter electrodes of conical or similar shape that are mirror images of one another and connected across a plasma power source.
Abstract translation: 远程等离子体源由一对圆锥形或类似形状的对置电极包围，它们是彼此的镜像并跨越等离子体电源连接。
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17.发明申请PLASMA PROCESSING SYSTEM INCLUDING A SYMMETRICAL REMOTE PLASMA SOURCE FOR MINIMAL ION ENERGY 有权等离子体处理系统，包括用于最小离子能量的对称远程等离子体源公开(公告)号：US20160118223A1
公开(公告)日：2016-04-28
申请号：US14523177
申请日：2014-10-24
Applicant: APPLIED MATERIALS, INC.
Inventor： Ankur Agarwal , Ajit Balakrishna , Rajinder Dhindsa
CPC classification number: H01J37/3244 , H01J37/32357 , H01J37/32541 , H05H1/46 , H05H2001/466
Abstract: A remote plasma source is enclosed by a pair of counter electrodes of conical or similar shape that are mirror images of one another and connected across a plasma power source.
Abstract translation: 远程等离子体源由一对圆锥形或类似形状的对置电极包围，它们是彼此的镜像并跨越等离子体电源连接。
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公开(公告)号：US11315760B2
公开(公告)日：2022-04-26
申请号：US16791947
申请日：2020-02-14
Applicant: Applied Materials, Inc.
Inventor： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
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公开(公告)号：US20220084794A1
公开(公告)日：2022-03-17
申请号：US17023186
申请日：2020-09-16
Applicant: Applied Materials, Inc.
Inventor： Kenneth S. Collins , Michael R. Rice , James D. Carducci , Kartik Ramaswamy , Ajit Balakrishna , Shahid Rauf , Jason Kenney
IPC: H01J37/32 , H01L21/67 , C23C16/52 , C23C16/505 , C23C16/455
Abstract: Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow.
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20.发明授权公开(公告)号：US09896769B2
公开(公告)日：2018-02-20
申请号：US13666280
申请日：2012-11-01
Applicant: APPLIED MATERIALS, INC.
Inventor： Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , James D. Carducci , Douglas A. Buchberger, Jr. , Ankur Agarwal , Jason A. Kenney , Leonid Dorf , Ajit Balakrishna , Richard Fovell
CPC classification number: C23F1/08 , B01J12/002 , C23C14/28 , H01J37/321 , H01J37/3211 , H01J37/32733 , H01J37/32834 , H05H1/46
Abstract: A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.
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