公开(公告)号：US20240018003A1

公开(公告)日：2024-01-18

申请号：US18214937

申请日：2023-06-27

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Son T. Chau

IPC: C01B32/196

CPC classification number: C01B32/196 ,  C01B2204/30

Abstract: A method for removing contaminants from a graphene product uses an accelerated neutral atom beam to remove product contaminants without disruption of the product's crystalline lattice and morphology to enable usage in high purity devices/systems such as exemplified in semi-conductor and like high purity needs applications.

公开(公告)号：US10858732B2

公开(公告)日：2020-12-08

申请号：US16273037

申请日：2019-02-11

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh

IPC: C23C14/00 ,  C23C14/58 ,  H01J37/32 ,  G02B1/12 ,  G02B1/02 ,  H01J37/05 ,  H01J37/317 ,  H01J37/147

Abstract: A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

公开(公告)号：US10670960B2

公开(公告)日：2020-06-02

申请号：US16008573

申请日：2018-06-14

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Kiet A. Chau ,  Son T. Chau

IPC: H01J37/00 ,  G03F1/80 ,  H01J37/317 ,  H01L21/311 ,  H01L21/265 ,  H01L21/02 ,  G03F1/82 ,  H05H3/02 ,  H01J37/147 ,  H01J37/05 ,  H01J37/32 ,  H01L29/36 ,  B24B37/04

Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

公开(公告)号：US20180299771A1

公开(公告)日：2018-10-18

申请号：US16008585

申请日：2018-06-14

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Rangarajan Jagannathan

IPC: G03F1/80 ,  H01L21/311 ,  H01L21/265 ,  H01L21/02 ,  G03F1/82

Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

公开(公告)号：US09799488B2

公开(公告)日：2017-10-24

申请号：US14571533

申请日：2014-12-16

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/08 ,  H01J37/147

CPC classification number: H01J37/3171 ,  C03C23/005 ,  C03C2204/08 ,  H01J37/05 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/15 ,  H01J2237/31701 ,  H01L21/02115 ,  H01L21/02238 ,  H01L21/02274 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32115 ,  H01L29/36 ,  H01M4/04 ,  H01M10/04 ,  H01M10/0585 ,  H01M2004/021 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

Abstract: A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or increase surface area.

公开(公告)号：US20160091787A1

公开(公告)日：2016-03-31

申请号：US14892284

申请日：2014-05-21

Applicant: Sean R. KIRKPATRICK ,  Son CHAU ,  EXOGENESIS CORPORATION

Inventor： Sean R. Kirkpatrick ,  Son T. Chau

IPC: G03F1/62 ,  B29C59/00 ,  B29C39/20

Abstract: A film and method of forming a film provides an unmodified starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, and a modified surface layer of thickness T2 which is less than T1, formed in at least a portion of the second surface, wherein a portion of the modified surface layer is not supported by unmodified starting material removed from the first surface opposite the modified surface layer.

Abstract translation: 薄膜和薄膜的形成方法提供了未改性的原料起始层，起始层具有相对的第一和第二表面，初始厚度T1和厚度T2小于T1的改性表面层形成于 所述第二表面的至少一部分，其中所述改性表面层的一部分不被从所述改性表面层相对的所述第一表面除去的未改性起始材料支撑。

公开(公告)号：US20150038899A1

公开(公告)日：2015-02-05

申请号：US14238503

申请日：2012-08-22

Applicant: EXOGENESIS CORPORATION

Inventor： Laurence B. Tarrant ,  Richard C. Svrluga ,  Sean R. Kirkpatrick

IPC: A61F2/30 ,  A61C8/00 ,  A61L31/16 ,  B05D3/06 ,  A61L31/08 ,  A61C19/06 ,  A61F2/36

CPC classification number: A61F2/30771 ,  A61C8/0013 ,  A61C19/06 ,  A61F2/30942 ,  A61F2/3607 ,  A61F2002/2835 ,  A61F2002/30028 ,  A61F2002/3068 ,  A61L27/047 ,  A61L27/06 ,  A61L27/306 ,  A61L27/32 ,  A61L27/50 ,  A61L27/54 ,  A61L31/08 ,  A61L31/16 ,  A61L2300/414 ,  A61L2300/426 ,  A61L2300/606 ,  A61L2400/18 ,  A61L2420/02 ,  A61L2420/06 ,  A61L2430/02 ,  B05D3/068

Abstract: A bone implantable medical device made from a biocompatible material, preferably comprising titania or zirconia, has at least a portion of its surface modified to facilitate improved integration with bone. The implantable device may incorporate a surface infused with osteoinductive agent and/or may incorporate holes loaded with a therapeutic agent. The infused surface and/or the holes may be patterned to determine the distribution of and amount of osteoinductive agent and/or therapeutic agent incorporated. The rate of release or elution profile of the therapeutic agent may be controlled. Methods for producing such a bone implantable medical device are also disclosed and employ the use of accelerated Neutral Beam irradiation, wherein the Neutral Beam is derived from an accelerated gas cluster ion beam irradiation for improving bone integration.

Abstract translation: 由生物相容性材料（优选包含二氧化钛或氧化锆）制成的骨可植入医疗装置具有至少部分其表面改性以便于改进与骨的整合。 可植入装置可以包含注入骨诱导剂的表面和/或可以掺入装有治疗剂的孔。 输注的表面和/或孔可以被图案化以确定引入的骨诱导剂和/或治疗剂的分布和量。 可以控制治疗剂的释放或洗脱曲线的速率。 还公开了用于生产这种骨可植入医疗装置的方法，并且采用加速中性束照射的方法，其中中性束源自用于改善骨整合的加速气体簇离子束照射。

公开(公告)号：US11004692B2

公开(公告)日：2021-05-11

申请号：US15758436

申请日：2016-07-22

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Richard C. Svrluga

IPC: H01L21/311 ,  H01L21/3213 ,  C03C15/02 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3105 ,  C03C15/00 ,  H01L21/265 ,  H01L21/308

Abstract: A method for shallow etching a substrate surface forms a shallow modified substrate layer overlying unmodified substrate using an accelerated neutral beam and etches the modified layer, stopping at the unmodified substrate beneath, producing controlled shallow etched substrate surfaces.

公开(公告)号：US20200022247A1

公开(公告)日：2020-01-16

申请号：US16576458

申请日：2019-09-19

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Son T. Chau

IPC: H05H3/00

Abstract: The present disclosure present and method and apparatus for controlling the direction of a Neutral Beam derived from a gas cluster ion beam.

公开(公告)号：US20190185991A1

公开(公告)日：2019-06-20

申请号：US16273037

申请日：2019-02-11

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh

IPC: C23C14/58 ,  H01J37/05 ,  G02B1/12 ,  G02B1/02 ,  H01J37/32 ,  H01J37/317

CPC classification number: C23C14/5833 ,  G02B1/02 ,  G02B1/12 ,  H01J37/05 ,  H01J37/147 ,  H01J37/3171 ,  H01J37/32816 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/15 ,  Y10T428/30

Abstract: A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.