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公开(公告)号:US20230352263A1
公开(公告)日:2023-11-02
申请号:US17791295
申请日:2020-01-29
Applicant: Hitachi High-Tech Corporation
Inventor: Kengo ASAI , Hisayuki TAKASU , Toru IWAYA
IPC: H01J37/08 , H01J37/305 , H01J37/302
CPC classification number: H01J37/08 , H01J37/305 , H01J37/302 , H01J2237/0822 , H01J2237/0815
Abstract: An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.
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公开(公告)号:US20220293391A1
公开(公告)日:2022-09-15
申请号:US17637728
申请日:2019-08-23
Applicant: Hitachi High-Tech Corporation
Inventor: Hitoshi KAMOSHIDA , Hisayuki TAKASU , Atsushi KAMINO , Shota AIDA , Megumi NAKAMURA
IPC: H01J37/305 , H01J37/20 , H01J37/304 , H01J37/08
Abstract: The invention provides an ion milling device capable of cross-sectional milling on an all-solid-state battery while reducing an occurrence of a short circuit due to a redeposition film. The ion milling device includes a sample stage 5 on which a sample 8 is placed, an ion source 1 configured to emit an unfocused ion beam 4 toward the sample, a stage controller 6 configured to cause the sample stage to perform a swing operation centered on a swing axis S0 set to be orthogonal to an ion beam center B0 of the ion beam, and cause the sample stage to perform a sliding operation along a line of intersection between a plane (YZ plane) including the ion beam center and perpendicularly intersecting the swing axis and a sample placement surface of the sample stage, in which the stage controller causes, in a first mode operation, the sample stage to perform the swing operation and the ion source to emit the ion beam to mill the sample, and causes in a second mode operation, the sample stage to perform the sliding operation and the ion source to emit the ion beam to remove sputter particles adhered again to the sample in the first mode operation.
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公开(公告)号:US20240194443A1
公开(公告)日:2024-06-13
申请号:US18286826
申请日:2021-05-19
Applicant: Hitachi High-Tech Corporation
Inventor: Kengo ASAI , Hisayuki TAKASU , Shota AIDA
IPC: H01J37/305 , H01J37/08 , H01J37/26
CPC classification number: H01J37/3053 , H01J37/08 , H01J37/265
Abstract: Provided is an ion milling device that can dramatically improve processing speed controllability and processing profile reproducibility. The ion milling device includes: an ion gun attached to a vacuum chamber and configured to emit an unfocused ion beam; a sample stand disposed in the vacuum chamber and configured to hold a sample; an ion beam characteristic measurement mechanism configured to measure an ion beam characteristic for estimating a processing profile of the sample processed by the ion beam; and a control unit. A magnetic field generation device is configured to generate a magnetic field in an ionization chamber of the ion gun and includes an electromagnet including an electromagnetic coil and a magnetic path. The control unit controls a value of a current, which is applied to the electromagnetic coil, based on the ion beam characteristic measured by the ion beam characteristic measurement mechanism.
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公开(公告)号:US20220367148A1
公开(公告)日:2022-11-17
申请号:US17788610
申请日:2019-12-24
Applicant: Hitachi High-Tech Corporation
Inventor: Shota AIDA , Hisayuki TAKASU , Atsushi KAMINO , Hitoshi KAMOSHIDA
IPC: H01J37/305 , H01J37/20
Abstract: Provided is an ion milling apparatus capable of enhancing reproducibility of an ion distribution. The ion milling apparatus includes: an ion source 101; a sample stage 102 on which a sample to be processed by being irradiated with an unfocused ion beam from the ion source 101 is placed; and a measurement member holding unit 106 that holds an ion beam current measurement member 105. A covering material 120 is provided so as to cover at least a surface of the measurement member holding unit 106 and the sample stage 102 facing the ion source 101. A material of the covering material 120 contains, as a main component, an element having an atomic number smaller than that of an element of a material of a structure on which the covering material is provided. The ion beam current measurement member 105 is moved in an irradiation range of the ion beam on a trajectory, which is located between the ion source and the sample stage, in a state where the ion beam is output from the ion source 101 under a first irradiation condition, and an ion beam current flowing when the ion beam current measurement member 105 is irradiated with the ion beam is measured.
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公开(公告)号:US20220319802A1
公开(公告)日:2022-10-06
申请号:US17754069
申请日:2019-09-25
Applicant: Hitachi High-Tech Corporation
Inventor: Megumi NAKAMURA , Hisayuki TAKASU , Kento HORINOUCHI
Abstract: A performance of a sample holder 1 used in a charged particle beam device is improved. A shield plate 2 is connected to a sample stand 7. A sample stand 7 is provided with a pressing member 5 that can move in a direction perpendicular to the shield plate 2 in a state in which the pressing member is attached to the sample stand 7, and has a bar shape. A sample supporting member 4 connected to the pressing member 5 is provided at a position facing the shield plate 2. A spring 6 is provided along an outer circumference of the pressing member 5 and is connected to the sample supporting member 4 and the sample stand 7.
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公开(公告)号:US20210183615A1
公开(公告)日:2021-06-17
申请号:US17270893
申请日:2018-08-31
Applicant: Hitachi High-Tech Corporation
Inventor: Hitoshi KAMOSHIDA , Hisayuki TAKASU , Atsushi KAMINO
IPC: H01J37/304 , H01J37/08
Abstract: Provided is an ion milling device capable of improving the reproducibility of an ion distribution. An ion milling device includes: an ion source (1); a sample stage (2) on which a sample (4) to be processed by being irradiated with an unfocused ion beam from the ion source (1) is placed; and a drive unit (8) configured to be arranged between the ion source (1) and the sample stage (2), and to move a linear ion beam measuring member (7) extending in a first direction to a second direction orthogonal to the first direction, in which the drive unit (8) moves the ion beam measuring member (7) within an emission range of the ion beam in a state where the ion beam is outputted from the ion source (1) under a first emission condition, and an ion beam current flowing through the ion beam measuring member (7) is measured by irradiating the ion beam measuring member (7) with the ion beam.
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