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公开(公告)号：US20240262682A1
公开(公告)日：2024-08-08
申请号：US18423008
申请日：2024-01-25
Applicant: Robert Bosch GmbH
Inventor： Raphael Schuler , Volker Schmitz
IPC: B81C1/00
CPC classification number: B81C1/00285 , B81C2201/0125 , B81C2201/0132 , B81C2201/0198 , B81C2203/0118 , B81C2203/0172
Abstract: A method for producing a micromechanical device. The method includes: providing a MEMS substrate having micromechanical functional layers bounding a cavity; structuring an oxide layer to form an oxide mask having at least one first recess having a first diameter; applying a resist mask to the oxide mask and the first recess; introducing a second recess into the resist mask in the area of the first recess, the second diameter being smaller than the first diameter; introducing a first trench into the MEMS substrate through the second recess; removing the resist mask; introducing a second trench into the MEMS substrate through the first recess and simultaneously deepening the first trench at least through the micromechanical substrate; adjusting a desired gas composition at a desired pressure in the cavity; sealing the first trench using a melt plug by melting substrate material of the MEMS substrate that surrounds the first trench.
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公开(公告)号：US20240100566A1
公开(公告)日：2024-03-28
申请号：US18530629
申请日：2023-12-06
Applicant: BFLY OPERATIONS, INC.
Inventor： Lingyun Miao , Keith G. Fife , Jianwei Liu , Jonathan M. Rothberg
CPC classification number: B06B1/0292 , B81B3/001 , B81C1/00984 , B81B2203/0127 , B81B2203/0315 , B81B2203/0392 , B81C2201/0109 , B81C2201/0125 , B81C2201/0176
Abstract: An ultrasound transducer device made by a process that includes the steps of forming depositing a first layer on a substrate, depositing a second layer on the first layer, patterning the second layer at a region corresponding to a location of a transducer cavity, depositing a third layer that refills regions created by patterning the second layer, planarizing the third layer to a top surface of the second layer, removing the second layer, conformally depositing a fourth layer over the first layer and the third layer, defining the transducer cavity in a support layer formed over the fourth layer; and bonding a membrane to the support layer.
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公开(公告)号：US20240024917A1
公开(公告)日：2024-01-25
申请号：US18376598
申请日：2023-10-04
Applicant: BFLY OPERATIONS, INC.
Inventor： Lingyun Miao , Jianwei Liu
CPC classification number: B06B1/0292 , B81B3/0021 , B81C1/00158 , B81B2201/0271 , B81B2203/0127 , B81C2203/0735 , B81B2207/015 , B81B2207/07 , B81C2201/013 , B81C2201/0125 , B81C2203/036 , B81B2203/04
Abstract: An ultrasound transducer device includes an electrode, a membrane separated from the electrode by a cavity between the membrane and the electrode, a patterned membrane support layer that defines a size and shape of the cavity and that is disposed between the electrode and the membrane, and vias that electrically connect the electrode to a substrate. The vias are disposed in the ultrasound transducer device such that less than 50% of the vias overlap with a support surface of the patterned membrane support layer, in a plan view.
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公开(公告)号：US11678133B2
公开(公告)日：2023-06-13
申请号：US17020153
申请日：2020-09-14
Inventor： Jung-Huei Peng , Chia-Hua Chu , Chun-Wen Cheng , Chin-Yi Cho , Li-Min Hung , Yao-Te Huang
CPC classification number: H04R31/003 , B81C1/00158 , H04R31/006 , B81C2201/013 , B81C2201/0125 , B81C2201/053 , B81C2203/036 , H04R19/005 , H04R19/04 , H04R2201/003 , H04R2307/027
Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
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公开(公告)号：US11667522B2
公开(公告)日：2023-06-06
申请号：US17109405
申请日：2020-12-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Chuan Tai , Fan Hu
CPC classification number: B81B7/02 , B81C1/00047 , B81C1/00333 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2203/0315 , B81C2201/013 , B81C2201/0125 , B81C2203/0109
Abstract: The present disclosure relates to a MEMS package having different trench depths, and a method of fabricating the MEMS package. In some embodiments, a cap substrate is bonded to a device substrate. The cap substrate comprises a cap substrate bonded to a device substrate. The cap substrate comprises a MEMS trench, a scribe trench, and an edge trench respectively recessed from at a front-side surface of the cap substrate. A stopper is disposed within the MEMS trench and raised from a bottom surface of the MEMS trench.
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Patent Agency Ranking
公开(公告)号：US20230149976A1
公开(公告)日：2023-05-18
申请号：US18093701
申请日：2023-01-05
Applicant: BFLY OPERATIONS, INC.
Inventor： Lingyun Miao , Keith G. Fife , Jianwei Liu , Jonathan M. Rothberg
CPC classification number: B06B1/0292 , B81B3/001 , B81C1/00984 , B81B2203/0315 , B81C2201/0176 , B81B2203/0127 , B81C2201/0109 , B81C2201/0125 , B81B2203/0392
Abstract: A method of forming an ultrasonic transducer device involves depositing a first layer on a substrate, depositing a second layer on the first layer, patterning the second layer at a region corresponding to a location of a transducer cavity, depositing a third layer that refills regions created by patterning the second layer, planarizing the third layer to a top surface of the second layer, removing the second layer, conformally depositing a fourth layer over the first layer and the third layer, defining the transducer cavity in a support layer formed over the fourth layer; and bonding a membrane to the support layer.
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公开(公告)号：US09969613B2
公开(公告)日：2018-05-15
申请号：US13861620
申请日：2013-04-12
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US09938137B2
公开(公告)日：2018-04-10
申请号：US15162997
申请日：2016-05-24
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US08211751B2
公开(公告)日：2012-07-03
申请号：US12810279
申请日：2008-12-12
Applicant: Satoshi Yamamoto , Hirokazu Hashimoto
Inventor： Satoshi Yamamoto , Hirokazu Hashimoto
IPC: H01L21/50
CPC classification number: B81C1/00317 , B81C2201/0104 , B81C2201/0108 , B81C2201/0125 , B81C2203/0118 , B81C2203/0145 , H01L27/14618 , H01L27/14627 , H01L27/14683 , H01L2924/0002 , H01L2924/00
Abstract: A method of manufacturing a semiconductor device includes: a bonding step of bonding a first substrate with optical transparency and a second substrate having a surface on which a functional element is provided to each other such that the functional element faces the first substrate; a thinning step of thinning at least one of the first and second substrates; and a through-hole forming step of forming a cavity and a through-hole communicated with the cavity in at least part of a bonding portion between the first and second substrates. According to the present invention, it is possible to prevent irregularities or cracks caused by the presence or absence of the cavity and more regularly thin the substrate. In addition, it is possible to manufacture a semiconductor device capable of contributing to the miniaturization of devices and electronic equipment having the devices, using a more convenient process.
Abstract translation: 一种制造半导体器件的方法包括：将具有光学透明性的第一衬底和第二衬底接合的接合步骤，其中功能元件彼此设置在其上，使得功能元件面向第一衬底; 减薄所述第一和第二基板中的至少一个的薄化步骤; 以及通孔形成步骤，在第一和第二基板之间的接合部分的至少一部分中形成与空腔连通的空腔和通孔。 根据本发明，可以防止由于空腔的存在或不存在引起的不规则或裂纹，并且更规则地使基板变薄。 此外，可以使用更方便的工艺来制造能够有助于具有该器件的器件和电子设备的小型化的半导体器件。
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公开(公告)号：US20090206423A1
公开(公告)日：2009-08-20
申请号：US11920687
申请日：2006-06-02
Applicant: Jyrki Kiihamaki , Hannu Kattelus
Inventor： Jyrki Kiihamaki , Hannu Kattelus
IPC: H01L29/84 , H01L21/306
CPC classification number: B81C1/00611 , B81C2201/0125
Abstract: The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.
Abstract translation: 本发明涉及加速度传感器的制造方法。 在该方法中，使用薄SOI晶片结构，其中蚀刻凹槽，其壁被氧化。 覆盖所有其他材料的厚电极材料层生长在结构的顶部，然后将表面研磨并化学机械地抛光，在结构中蚀刻薄的释放孔，形成结构图案，最后使用 执行氢氟酸溶液以释放旨在移动并打开电容间隙的结构。
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