Nano-Patterned System And Magnetic-Field Applying Device Thereof
    12.
    发明申请
    Nano-Patterned System And Magnetic-Field Applying Device Thereof 有权
    纳米图案系统及其磁场应用器件

    公开(公告)号:US20170018395A1

    公开(公告)日:2017-01-19

    申请号:US15282028

    申请日:2016-09-30

    Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device, which comprises a power supply, a magnetic-field generation device and a pair of magnetic poles. The magnetic-field generation device comprises a coil and a magnetic conductive soft iron core. The power supply is connected to the coil, which is wound on the soft iron core to generate a magnetic field. The soft iron core is of a semi-closed frame structure and the magnetic poles are at the ends of the frame structure. The stage is inside a vacuum chamber. The poles are oppositely arranged inside the vacuum chamber relative to the stage. The coil and the soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the stage and apply a local magnetic field.

    Abstract translation: 纳米图案系统包括真空室,样品台和磁场施加装置,其包括电源,磁场产生装置和一对磁极。 磁场产生装置包括线圈和导磁软铁芯。 电源连接到卷绕在软铁芯上的线圈,以产生磁场。 软铁芯为半闭框架结构,磁极位于框架结构的两端。 舞台在真空室内。 极相对于真空室相对地布置在真空室内。 线圈和软铁芯在真空室外。 软铁芯将线圈产生的磁场引入真空室。 磁极将样品放在载物台上并施加局部磁场。

    System and Method for Controlling Charge-up in an Electron Beam Apparatus
    13.
    发明申请
    System and Method for Controlling Charge-up in an Electron Beam Apparatus 有权
    用于控制电子束装置中电荷的系统和方法

    公开(公告)号:US20150060665A1

    公开(公告)日:2015-03-05

    申请号:US14512672

    申请日:2014-10-13

    Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

    Abstract translation: 本发明提供了用于控制电子束装置中的充电的装置和相应的实施例,其可以在成像扫描的帧周期内在样品表面上产生后不久就消除正电荷。 该方法是使从样品表面发射的二次电子的一些或全部返回到中和积聚在其上的正电荷,从而在有限的时间段内达到电荷平衡。 这些实施例使用控制电极产生延迟场,以将具有低动能的一些二次电子反射回样品表面。

    System and method for controlling charge-up in an electron beam apparatus
    14.
    发明授权
    System and method for controlling charge-up in an electron beam apparatus 有权
    用于控制电子束装置中的电荷的系统和方法

    公开(公告)号:US08907281B2

    公开(公告)日:2014-12-09

    申请号:US14081465

    申请日:2013-11-15

    Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

    Abstract translation: 本发明提供了用于控制电子束装置中的充电的装置和相应的实施例,其可以在成像扫描的帧周期内在样品表面上产生后不久就消除正电荷。 该方法是使从样品表面发射的二次电子的一些或全部返回到中和积聚在其上的正电荷,从而在有限的时间段内达到电荷平衡。 这些实施例使用控制电极产生延迟场,以将具有低动能的一些二次电子反射回样品表面。

    Apparatus for depositing a thin layer of sputtered atoms on a member
    16.
    发明授权
    Apparatus for depositing a thin layer of sputtered atoms on a member 失效
    用于在成员上沉积薄层的溅射原子的装置

    公开(公告)号:US5135634A

    公开(公告)日:1992-08-04

    申请号:US655065

    申请日:1991-02-14

    Inventor: Andrew P. Clarke

    Abstract: A target releases electrons to an anode through a cavity containing gaseous atoms (e.g. argon) having properties of becoming ionized by electron impingement. Magnetic and electrical fields increase the distance of electron travel between the anode and the target, thereby enhancing ion formation from the gaseous atoms. The ions bombard the target and cause it to emit sputtered atoms (e.g. aluminum) which are deposited on a substrate (e.g. wafer) displaced from the target. In one embodiment, a shield disposed between the target and the substrate is shaped, and has a potential, to attract charged particles and prevent them from moving to the substrate. This allows the wafer to be disposed close to the target, thereby enhancing the density, and the thickness uniformity, of the deposition on the substrate. The shield also acts as a getter to remove impurities (e.g. water molecules) from the space between the target and the substrate. In another embodiment the shield has a positive potential to attract electrons and repel ions, thereby funneling ions toward the substrate. The funnel shape is dependent upon the shield voltage. A hood displaced slightly (e.g. 50 mils) from the shield is shaped, and has a potential (e.g. ground), to attract charged particles near the hood and outside of the funnel. The funneled ions and sputtered atoms are deposited on the substrate to generate heat in the substrate, thereby enhancing the properties of the substrate deposition. Sputtered atoms between the shield and the hood form a dielectric to prevent any voltage breakdown between the shield and the hood.

    Abstract translation: 目标通过包含具有通过电子碰撞电离的性质的气态原子(例如氩)的空穴将电子释放到阳极。 磁场和电场增加了电极在阳极和靶之间的行进距离,从而增强了气态原子的离子形成。 离子轰击靶并使其发射溅射的原子(例如铝),其沉积在从靶上移位的衬底(例如晶片)上。 在一个实施例中,设置在靶和衬底之间的屏蔽被成形并具有吸引带电粒子并阻止它们移动到衬底的电位。 这允许晶片靠近靶设置,从而提高衬底上的沉积的密度和厚度均匀性。 护罩还用作吸气剂以从靶和衬底之间的空间去除杂质(例如水分子)。 在另一个实施例中,屏蔽具有吸引电子和排斥离子的正电势,从而使离子向衬底漏斗。 漏斗形状取决于屏蔽电压。 形成从屏蔽件稍微(例如50密耳)的罩罩,并且具有电位(例如接地),以吸引靠近发动机罩和漏斗外部的带电粒子。 漏斗的离子和溅射的原子沉积在衬底上以在衬底中产生热量,从而增强衬底沉积的性质。 屏蔽和罩之间的溅射原子形成电介质,以防止屏蔽和罩之间的任何电压击穿。

    SUBSTRATE TREATING APPARATUS
    19.
    发明公开

    公开(公告)号:US20230207280A1

    公开(公告)日:2023-06-29

    申请号:US18147381

    申请日:2022-12-28

    CPC classification number: H01J37/32568 H01J2237/0262 H01J2237/334

    Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a treatment space, in which a substrate is treated, a support unit that supports the substrate in the treatment space, a shower plate having a through-hole, through which a process gas flows to the treatment space, a plasma source that excites plasma by exciting the process gas supplied to the treatment space, and a density adjusting member that adjusts a density of the plasma generated in the treatment space by changing a dielectric permittivity, and the density adjusting member is located on the shower plate.

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