公开(公告)号：US12142452B2

公开(公告)日：2024-11-12

申请号：US17528268

申请日：2021-11-17

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Victor Brouk ,  Daniel J. Hoffman

IPC: H01J37/08 ,  G01N27/06 ,  H01J37/32

Abstract: Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship d ⁢ V 0 dt - I c C 1 = D to represent a status of a plasma process or the plasma processing chamber, where Ic represents a controllable ion compensation current, D is a unitless value, d ⁢ V 0 dT represents a portion of the modified periodic voltage function that includes a negative voltage ramp, and C1 is an effective capacitance including a capacitance of a substrate support.

公开(公告)号：US12101870B2

公开(公告)日：2024-09-24

申请号：US18094724

申请日：2023-01-09

Applicant: SHINE Technologies, LLC

Inventor： Arne Kobernik ,  Carl Sherven ,  Casey Lamers ,  Chris Seyfert ,  Evan Sengbusch ,  Gabriel Becerra ,  Jin Lee ,  Logan Campbell ,  Mark Thomas ,  Michael Taylor ,  Preston Barrows ,  Ross Radel ,  Tye Gribb

IPC: H05B7/22 ,  H01J37/32 ,  H01J41/14 ,  H05B31/26 ,  H05H1/46 ,  H05H1/54 ,  H05H3/06 ,  H05H5/04 ,  H05H6/00 ,  H05H7/22 ,  H05H9/02 ,  H01J37/08 ,  H01J41/04 ,  H01T23/00

CPC classification number: H05H7/22 ,  H01J37/32082 ,  H01J41/14 ,  H05B31/26 ,  H05H1/46 ,  H05H1/54 ,  H05H3/06 ,  H05H5/04 ,  H05H6/00 ,  H05H9/02 ,  H01J37/08 ,  H01J41/04 ,  H01T23/00 ,  H05H1/4622

Abstract: Provided herein are high energy ion beam generator systems and methods that provide low cost, high performance, robust, consistent, uniform, low gas consumption and high current/high-moderate voltage generation of neutrons and protons. Such systems and methods find use for the commercial-scale generation of neutrons and protons for a wide variety of research, medical, security, and industrial processes.

公开(公告)号：US20240274405A1

公开(公告)日：2024-08-15

申请号：US18647325

申请日：2024-04-26

Applicant: Taiwan Semiconductor Manufacturing Comapny, Ltd.

Inventor： Tsung-Min LIN ,  Sheng-Chi LIN ,  Jui-Feng JAO ,  Fang-Chi CHIEN ,  Lung-Yin TANG

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/038

Abstract: An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.

公开(公告)号：US12051561B2

公开(公告)日：2024-07-30

申请号：US18345618

申请日：2023-06-30

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil Bassom ,  Edward Moore

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/05

Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

公开(公告)号：US20240234079A9

公开(公告)日：2024-07-11

申请号：US17993886

申请日：2022-11-24

Applicant: United Semiconductor (Xiamen) Co., Ltd.

Inventor： Wen Shuo Cui ,  WEN YI TAN

IPC: H01J37/08 ,  H01J37/24 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/242 ,  H01J37/3171

Abstract: The invention provides an ion source structure of an ion implanter, which comprises an arc chamber, a filament in the arc chamber, and a cathode in the arc chamber, wherein the cathode has an upper surface and a lower surface, and at least one of the upper surface and the lower surface is non-planar.

公开(公告)号：US12020896B2

公开(公告)日：2024-06-25

申请号：US16947430

申请日：2020-07-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsung-Min Lin ,  Sheng-Chi Lin ,  Jui-Feng Jao ,  Fang-Chi Chien ,  Lung-Yin Tang

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/038

Abstract: An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.

公开(公告)号：US11978608B2

公开(公告)日：2024-05-07

申请号：US17201436

申请日：2021-03-15

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Yuuji Ishida

IPC: H01J37/08 ,  H01J37/18 ,  H01J37/317 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/18 ,  H01J37/3171 ,  H01J37/32064 ,  H01J37/32614 ,  H01J37/32954

Abstract: There is provided an ion generation device including a plasma generation chamber that generates a plasma for extracting an ion, and a heating device configured to heat the plasma generation chamber by irradiating a member that defines the plasma generation chamber or a member that is to be exposed to the plasma generated inside the plasma generation chamber with a laser beam.

公开(公告)号：US20240120174A1

公开(公告)日：2024-04-11

申请号：US18273325

申请日：2021-01-22

Applicant: Hitachi High-Tech Corporation

Inventor： Shota AIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Hitoshi KAMOSHIDA

IPC: H01J37/305 ,  H01J37/08 ,  H01J37/24

CPC classification number: H01J37/3056 ,  H01J37/08 ,  H01J37/243

Abstract: In order to improve the processing reproducibility, an ion milling device 100 includes a sample chamber 107, a sample stage 102 that is disposed in the sample chamber on which a sample is placed, an ion source 101 that emits an unfocused ion beam toward the sample, a control unit 112 that controls an output of the ion beam, an oscillator 104 that is disposed in the sample chamber, and an oscillation circuit 111 that oscillates the oscillator and outputs an oscillation signal to the control unit, in which the control unit controls the output of the ion beam such that a vibrational frequency change amount of the oscillator per unit time due to deposition of sputtered particles generated by irradiating the sample with the ion beam on the oscillator is kept within a predetermined range.

公开(公告)号：US11955311B2

公开(公告)日：2024-04-09

申请号：US17835875

申请日：2022-06-08

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Shinya Takemura

IPC: H01J37/08 ,  G06N20/00 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/3056 ,  G06N20/00 ,  H01J37/08 ,  H01J37/304 ,  H01J37/3171

Abstract: An ion beam irradiation apparatus includes modules for generating an ion beam according to a recipe, and a control device. The control device receives the recipe including a processing condition for new processing, reads, from a monitored value storage, a monitored value that indicates a state of a module during a last processing immediately before the new processing, inputs the processing condition and the monitored value to a trained machine learning algorithm and receives, as an output from the trained machine learning algorithm, an initial value for the module, and outputs the initial value to the module to set up the module for generating the ion beam.

公开(公告)号：US11887806B2

公开(公告)日：2024-01-30

申请号：US17715690

申请日：2022-04-07

Applicant: Applied Materials, Inc.

Inventor： Graham Wright ,  Ryan C. Prager

IPC: H01J37/08 ,  H01J37/317 ,  C23C14/48 ,  H01J37/05

CPC classification number: H01J37/08 ,  C23C14/48 ,  H01J37/05 ,  H01J37/3171 ,  H01J2237/0815

Abstract: An ion source is provided. The ion source may include an ion chamber to generate an ion beam comprising a metal ion species; and a charge source, coupled to deliver a metal vapor to the ion chamber, the charge source including a charge mixture. The charge mixture may include a first portion, comprising an elemental metal; and a second portion, comprising a heterogeneous metal fluoride compound.