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公开(公告)号：US09850123B2
公开(公告)日：2017-12-26
申请号：US15297661
申请日：2016-10-19
Applicant: MKS Instruments, Inc.
Inventor： Lei Gu , Stephen F. Bart
CPC classification number: B81B7/0048 , B81B2201/0264 , B81C1/00325 , B81C1/00547 , B81C2201/013 , H01L2224/48091 , H01L2924/00014
Abstract: Stress relief structures and methods that can be applied to MEMS sensors requiring a hermetic seal and that can be simply manufactured are disclosed. The system includes a sensor having a first surface and a second surface, the second surface being disposed away from the first surface, the second surface also being disposed away from a package surface and located between the first surface and the package surface, a number of support members, each support member extending from the second surface to the package surface, the support members being disposed on and operatively connected to only a portion of the second surface. The support member are configured to reduce stress produced by package-sensor interaction.
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202.发明授权公开(公告)号：US09828243B2
公开(公告)日：2017-11-28
申请号：US14963844
申请日：2015-12-09
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. Jahnes , Anthony K. Stamper
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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公开(公告)号：US09828241B2
公开(公告)日：2017-11-28
申请号：US15197418
申请日：2016-06-29
Applicant: HYUNDAI MOTOR COMPANY
Inventor： Ilseon Yoo
CPC classification number: B81C1/00269 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2203/04 , B81C2201/013 , B81C2201/0159 , B81C2203/0118 , B81C2203/031 , B81C2203/035 , B81C2203/036
Abstract: A manufacturing method of a MEMS sensor includes forming a first substrate, wherein the first substrate includes a lower electrode provided at one surface thereof, forming a second substrate, wherein the second substrate includes a first concave-convex portion provided at one surface thereof, first-bonding one surface of the first substrate and one surface of the second substrate to face each other, forming a third substrate, wherein the third substrate includes an upper electrode provided at one surface thereof, second-bonding another surface of the second substrate and one surface of the third substrate to face each other, and forming an electrode line on another surface of the third substrate to be connected to the lower electrode and the upper electrode.
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公开(公告)号：US20170327370A1
公开(公告)日：2017-11-16
申请号：US15367766
申请日：2016-12-02
Applicant: INVENSENSE, INC.
Inventor： Julius Ming-Lin Tsai , Michael J. Daneman
CPC classification number: B81B7/007 , B81B3/0029 , B81B2201/032 , B81B2207/012 , B81B2207/07 , B81C1/00182 , B81C1/00269 , B81C1/00301 , B81C2201/013 , B81C2201/019 , B81C2203/0109 , B81C2203/0792
Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.
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公开(公告)号：US20170313575A1
公开(公告)日：2017-11-02
申请号：US15652920
申请日：2017-07-18
Applicant: Foresee Technology Corp.
Inventor： Chien-Chang CHEN , Yi-Der LIANG , Shiao-Yi LIN , Cheng-Kuang YANG
CPC classification number: B81B3/0054 , B81B3/0078 , B81B2201/0257 , B81B2203/0118 , B81B2203/0127 , B81B2203/0307 , B81B2203/0361 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C2201/013 , B81C2201/053 , B81C2203/0714 , B81C2203/0735 , H04R19/005 , H04R19/04
Abstract: The present invention disclosed a micro acoustic collector and CMOS microphone single chip. The micro acoustic collector comprising: a plurality of leaf-shaped structures annularly arranged with symmetry, each of the plurality of leaf-shaped structure having a suspended arm and a restrained arm, and the suspended arm of the plurality of leaf-shaped structures connected to a suspended fulcrum, and a plurality of through-vias formed in the suspended fulcrum and the plurality of leaf-shaped structures; a plurality of support pillars uniformly disposed under edges of the plurality of leaf-shaped structures corresponding to the restrained arms and the suspend arms; and a base metal layer formed under and insulated from the plurality of support pillars, and facing towards the inner-annular-supported acoustic collection film to form a hollow space.
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Patent Agency Ranking
206.发明申请公开(公告)号：US20170267516A1
公开(公告)日：2017-09-21
申请号：US15615238
申请日：2017-06-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-Yen Chou
CPC classification number: B81B3/001 , B81B2203/0163 , B81B2207/012 , B81C1/00801 , B81C1/00952 , B81C2201/013 , B81C2201/014 , B81C2203/0792
Abstract: A method for manufacturing a microelectromechanical systems (MEMS) structure with sacrificial supports to prevent stiction is provided. A first etch is performed into an upper surface of a carrier substrate to form a sacrificial support in a cavity. A thermal oxidation process is performed to oxidize the sacrificial support, and to form an oxide layer lining the upper surface and including the oxidized sacrificial support. A MEMS substrate is bonded to the carrier substrate over the carrier substrate and through the oxide layer. A second etch is performed into the MEMS substrate to form a movable mass overlying the cavity and supported by the oxidized sacrificial support. A third etch is performed into the oxide layer to laterally etch the oxidized sacrificial support and to remove the oxidized sacrificial support. A MEMS structure with anti-stiction bumps is also provided.
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公开(公告)号：US09758369B2
公开(公告)日：2017-09-12
申请号：US15098462
申请日：2016-04-14
Applicant: Robert Bosch GmbH
Inventor： Florian Schoen , Bernhard Gehl
CPC classification number: B81B7/02 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81C1/00214 , B81C2201/0109 , B81C2201/013 , G01L1/148 , G01L9/12 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: A manufacturing method for a MEMS element, by which both a microphone including a microphone capacitor and a pressure sensor including a measuring capacitor are implemented in the MEMS structure. The components of the microphone and pressure sensor are formed in parallel but independently in the layers of the MEMS structure. The pressure sensor diaphragm is structured from a first layer, which functions as a base layer for the microphone diaphragm. The fixed counter-electrode of the measuring capacitor is structured from an electrically conductive second layer which functions as a diaphragm layer of the microphone. The fixed pressure sensor counter-element is structured from third and fourth layers. The third layer functions in the area of the microphone structure as a sacrificial layer, the thickness of which in the area of the microphone structure determines the electrode distance of the microphone capacitor. The microphone counter-element is structured from the fourth layer.
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公开(公告)号：US20170225196A1
公开(公告)日：2017-08-10
申请号：US15581511
申请日：2017-04-28
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC classification number: B06B1/02 , B06B1/0292 , B81B3/0021 , B81B7/0077 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771 , G10K9/12 , G10K11/18
Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号：US20170180900A1
公开(公告)日：2017-06-22
申请号：US15452058
申请日：2017-03-07
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen
CPC classification number: H04R31/003 , B81B3/0021 , B81B3/0086 , B81B2201/0221 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , B81C1/00158 , B81C2201/013 , H04R1/08 , H04R19/005 , H04R31/006 , H04R2201/003
Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.
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210.发明授权公开(公告)号：US09676606B2
公开(公告)日：2017-06-13
申请号：US14699070
申请日：2015-04-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-Yen Chou
IPC: H01L21/768 , B81B3/00 , B81C1/00
CPC classification number: B81B3/001 , B81B2203/0163 , B81B2207/012 , B81C1/00801 , B81C1/00952 , B81C2201/013 , B81C2201/014 , B81C2203/0792
Abstract: A method for manufacturing a microelectromechanical systems (MEMS) structure with sacrificial supports to prevent stiction is provided. A first etch is performed into an upper surface of a carrier substrate to form a sacrificial support in a cavity. A thermal oxidation process is performed to oxidize the sacrificial support, and to form an oxide layer lining the upper surface and including the oxidized sacrificial support. A MEMS substrate is bonded to the carrier substrate over the carrier substrate and through the oxide layer. A second etch is performed into the MEMS substrate to form a movable mass overlying the cavity and supported by the oxidized sacrificial support. A third etch is performed into the oxide layer to laterally etch the oxidized sacrificial support and to remove the oxidized sacrificial support. A MEMS structure with anti-stiction bumps is also provided.
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