公开(公告)号：US20230183057A1

公开(公告)日：2023-06-15

申请号：US18165118

申请日：2023-02-06

Applicant: Stathera IP Holdings Inc.

Inventor： George Xereas ,  Vahid Tayari ,  Ahmed Khorshid ,  Charles Allan

IPC: B81B3/00 ,  B81B7/00 ,  H03H9/02

CPC classification number: B81B3/0021 ,  B81B7/0087 ,  H03H9/02448 ,  B81B2201/0271 ,  H03H2009/2442

Abstract: An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body includes a layer of base material and, deposited on top of the layer of base material, a layer of mismatch material having a mismatch in temperature coefficient of elasticity (TCE) relative to the base material. The base material is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The thickness of the layer of the mismatch material is chosen so as to minimize a first order temperature coefficient of frequency for the resonator body.

公开(公告)号：US20180127268A1

公开(公告)日：2018-05-10

申请号：US15865691

申请日：2018-01-09

Applicant: Murata Manufacturing Co .. Ltd.

Inventor： Masakazu Fukumitsu ,  Shuhei Yamada

IPC: B81C1/00 ,  H03H3/007 ,  H03H9/24 ,  B81B7/00

CPC classification number: B81C1/00269 ,  B81B7/0077 ,  B81B2201/0271 ,  B81B2207/095 ,  B81C2203/0118 ,  B81C2203/035 ,  B81C2203/036 ,  H01L23/02 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405

Abstract: A MEMS device that includes a lower substrate having an element region on a surface thereof; an upper substrate opposed to the lower substrate; and a bonding section that bonds the lower substrate and the upper substrate to each other around the periphery of the element region. The bonding section has a first region, a second region, and a third region which are sequentially provided in this order from a side closer to the element region to a side farther from the element region. At least one of the first region and the third region contains a hyper-eutectic alloy of one of a first component and a second component, and the second region contains a eutectic alloy of the first component and the second component.

公开(公告)号：US09796580B2

公开(公告)日：2017-10-24

申请号：US14738745

申请日：2015-06-12

Applicant: InvenSense, Inc.

Inventor： Peter Smeys ,  Martin Lim

IPC: B81B7/00

CPC classification number: B81B7/007 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00238 ,  B81C2203/0785 ,  B81C2203/0792 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A sensor chip combining a substrate comprising at least one CMOS circuit, a MEMS substrate and another substrate comprising at least one CMOS circuit in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first substrate with a first surface and a second surface comprising at least one CMOS circuit; a MEMS substrate with a first surface and a second surface; and a second substrate comprising at least one CMOS circuit. Where the first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the MEMS substrate. The second surface of the MEMS substrate is attached to the second substrate. The first substrate, the MEMS substrate, the second substrate and the packaging substrate are mechanically attached and provided with electrical inter-connects.

公开(公告)号：US09758371B2

公开(公告)日：2017-09-12

申请号：US15242437

申请日：2016-08-19

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: H01L23/051 ,  B81C1/00 ,  B81B7/00 ,  H01L41/113

CPC classification number: B81C1/00277 ,  B81B7/0035 ,  B81B7/0058 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L23/051 ,  H01L41/1136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

公开(公告)号：US09755612B2

公开(公告)日：2017-09-05

申请号：US14367803

申请日：2012-12-20

Applicant: The Swatch Group Research and Development Ltd

Inventor： Thierry Hessler ,  Silvio Dalla Piazza

IPC: B44C1/22 ,  H03H9/19 ,  B81C1/00 ,  G04C3/12 ,  G04F5/06 ,  G04G17/02 ,  G04B17/06 ,  G04B17/34 ,  B23K26/00 ,  F21V17/02 ,  H01L41/047 ,  H01L41/332 ,  H03H9/215

CPC classification number: H03H9/19 ,  B23K26/53 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81C1/00595 ,  B81C2201/0143 ,  F21V17/02 ,  G04B17/066 ,  G04B17/345 ,  G04C3/12 ,  G04F5/063 ,  G04G17/02 ,  H01L41/0475 ,  H01L41/332 ,  H03H9/215

Abstract: A method for manufacturing a resonator in a substrate, including: a) modifying a structure of at least one region of the substrate to make the at least one region more selective; b) etching the at least one region to selectively manufacture the resonator.

公开(公告)号：US20170217764A1

公开(公告)日：2017-08-03

申请号：US15175724

申请日：2016-06-07

Applicant: NATIONAL TSING HUA UNIVERSITY

Inventor： SHENG-SHIAN LI ,  CHAO-YU CHEN ,  MING-HUANG LI

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81B3/0086 ,  B81B2201/0271 ,  B81C1/00246 ,  B81C1/00333 ,  B81C2203/0742 ,  H03H3/0072 ,  H03H9/2452 ,  H03H2009/02314

Abstract: A CMOS-MEMS resonant transducer and a method for fabricating the same are disclosed, which provide the CMOS-MEMS resonant transducer having narrow gaps(

公开(公告)号：US09650238B2

公开(公告)日：2017-05-16

申请号：US14475487

申请日：2014-09-02

Applicant: Electronics and Telecommunications Research Institute

Inventor： In Bok Baek ,  Han Young Yu ,  Yark Yeon Kim ,  Young Jun Kim ,  Chang Geun Ahn ,  Yong Sun Yoon ,  Bong Kuk Lee ,  Ji Eun Lim ,  Won Ick Jang

IPC: B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  H03H3/007 ,  H03H9/08 ,  H03H9/24 ,  H02N11/00

CPC classification number: B81B7/02 ,  B81B7/0006 ,  B81B7/0093 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/0307 ,  B81C1/00142 ,  B81C1/0019 ,  B81C1/0038 ,  B81C1/00539 ,  H02N11/002 ,  H03H3/0072 ,  H03H9/08 ,  H03H9/2463

Abstract: A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

公开(公告)号：US09643838B1

公开(公告)日：2017-05-09

申请号：US15017209

申请日：2016-02-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chia-Hua Chu ,  Jung-Huei Peng ,  Yi-Chien Wu ,  Li-Min Hung

IPC: H01L23/02 ,  H01L23/22 ,  H01L21/00 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/012 ,  B81C1/00285 ,  B81C2203/0118 ,  B81C2203/0145 ,  B81C2203/0792

Abstract: A semiconductor device includes a substrate, an interconnection layer, an outgassing layer, and a patterned outgassing barrier layer. The interconnection layer is over the substrate. The outgassing layer is over the interconnection layer. The patterned outgassing barrier layer is over the outgassing layer. The patterned outgassing barrier layer includes a plurality of barrier structures and a plurality of openings. The plurality of openings expose a portion of an upmost surface of the outgassing layer, and a bottommost surface of the patterned outgassing barrier layer is substantially coplanar with the upmost surface of the outgassing layer.

公开(公告)号：US20170121172A1

公开(公告)日：2017-05-04

申请号：US15405911

申请日：2017-01-13

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Jia Jie Xia ,  Nagarajan Ranganathan ,  Rakesh Kumar ,  Aveek Nath Chatterjee

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/016 ,  B81B2201/0271 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C1/00253 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2201/053 ,  B81C2203/0735 ,  B81C2203/0771 ,  B81C2203/0792

Abstract: Integrated MEMS-CMOS devices and integrated circuits with MEMS devices and CMOS devices are provided. An exemplary integrated MEMS-CMOS device is vertically integrated and includes a substrate having a first side and a second side opposite the first side. Further, the exemplary vertically integrated MEMS-CMOS device includes a CMOS device located in and/or over the first side of the substrate. Also, the exemplary vertically integrated MEMS-CMOS device includes a MEMS device located in and/or under the second side of the substrate.

公开(公告)号：US09559660B2

公开(公告)日：2017-01-31

申请号：US13985876

申请日：2012-02-17

Applicant: Tuomas Pensala ,  Antti Jaakkola ,  Maria Ganchenkova ,  Mika Prunnila ,  Jyrki Kiihamaki

Inventor： Tuomas Pensala ,  Antti Jaakkola ,  Maria Ganchenkova ,  Mika Prunnila ,  Jyrki Kiihamaki

IPC: H03H9/24 ,  H03H3/013 ,  H03H9/02 ,  H03H3/007 ,  B81B3/00 ,  H01L41/18

CPC classification number: H03H9/02448 ,  B81B3/0078 ,  B81B2201/0271 ,  H01L41/18 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/2447 ,  H03H2009/02503 ,  H03H2009/02519 ,  H03H2009/241 ,  H03H2009/2442 ,  Y10T29/42

Abstract: The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

Abstract translation: 本发明涉及一种微机械装置及其制造方法。 该装置包括由半导体材料制成的振荡或偏转元件，其包括n型掺杂剂和功能性地连接到所述振荡或偏转元件的激励或感测装置。 根据本发明，振荡或偏转元件基本均匀地掺杂有所述n型掺杂剂。 本发明允许设计具有低温度漂移的各种实用谐振器。