公开(公告)号：US10770553B2

公开(公告)日：2020-09-08

申请号：US16143757

申请日：2018-09-27

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Takashi Shinohe ,  Shingo Yagyu ,  Takuto Igawa

IPC: H01L29/267 ,  H01L29/04 ,  H01L21/02 ,  H01L29/24 ,  H01L29/778 ,  H01L29/737 ,  H01L29/22

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an ε-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.

公开(公告)号：US10460934B2

公开(公告)日：2019-10-29

申请号：US16106753

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi Oshima ,  Shizuo Fujita ,  Kentaro Kaneko ,  Makoto Kasu ,  Katsuaki Kawara ,  Takashi Shinohe ,  Tokiyoshi Matsuda ,  Toshimi Hitora

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/04 ,  H01L29/872

Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106 cm−2.

公开(公告)号：US20190165383A1

公开(公告)日：2019-05-30

申请号：US16197592

申请日：2018-11-21

Applicant: FLOSFIA INC. ,  EYETEC CO., LTD. ,  KYOTO UNIVERSITY

Inventor： Shizuo FUJITA ,  Masafumi ONO ,  Takayuki UCHIDA ,  Kentaro KANEKO ,  Takashi TANAKA ,  Shingo YAGYU ,  Takashi SHINOHE ,  Takuto IGAWA

IPC: H01M8/0228 ,  H01M8/026 ,  H01M8/021 ,  H01M8/0215 ,  C23C16/40 ,  C23C16/448

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a base including a first metal as a major component and a second metal that is different from the first metal, and a thermal oxide film of the base arranged on the base and containing an oxide of the first metal and an oxide of the second metal. The first metal contained in the base is more in atomic composition ratio than the second metal contained in the base. The first metal of the oxide contained in the thermal oxide film is less in atomic composition ratio than the first metal contained in the base. The second metal of the oxide contained in the thermal oxide film is equal to or more in atomic ratio than the first metal of the oxide contained in the thermal oxide film.

公开(公告)号：US20190157400A1

公开(公告)日：2019-05-23

申请号：US16313239

申请日：2017-06-30

Applicant: FLOSFIA INC.

Inventor： Tomochika TANIKAWA ,  Toshimi HITORA

IPC: H01L29/24 ,  C01G55/00 ,  H01L35/22 ,  H01L21/02 ,  H01L33/26

Abstract: A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.

公开(公告)号：US20190148482A1

公开(公告)日：2019-05-16

申请号：US16245991

申请日：2019-01-11

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/04 ,  H01L29/24 ,  H01L29/26 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/477

Abstract: Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

公开(公告)号：US20190057866A1

公开(公告)日：2019-02-21

申请号：US16106931

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi OSHIMA ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Makoto KASU ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/24 ,  C30B25/04 ,  C30B25/18 ,  C30B29/20

Abstract: According to an aspect of a present inventive subject matter, a crystal includes: a corundum-structured oxide semiconductor as a major component, the corundum-structured oxide semiconductor including gallium and/or indium and doped with a dopant including germanium; a principal plane; a carrier concentration that is 1×1018/cm3 or more; and an electron mobility that is 20 cm2/Vs or more.

公开(公告)号：US20170200790A1

公开(公告)日：2017-07-13

申请号：US15320253

申请日：2015-07-21

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L29/778 ,  H01L29/808 ,  H01L29/772 ,  H01L29/739 ,  H01L33/26 ,  H01L29/78 ,  H01L29/66 ,  H01L33/00 ,  H01L29/812 ,  H01L21/02 ,  C23C16/448 ,  C23C16/44 ,  C23C16/40 ,  H01L29/872

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US20150194479A1

公开(公告)日：2015-07-09

申请号：US14233699

申请日：2013-09-24

Applicant: FLOSFIA INC.

Inventor： Kentaro Kaneko ,  Toshimi Hitora ,  Takashi Hirao

IPC: H01L29/04 ,  H01L21/02 ,  H01L29/24

CPC classification number: H01L29/04 ,  C30B25/02 ,  C30B29/20 ,  C30B29/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/24

Abstract: There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.

Abstract translation: 提供了包括质量好的刚玉水晶膜的半导体器件。 提供了一种半导体器件，其包括各自具有刚玉晶体结构的基底基板，半导体层和绝缘膜。 具有刚玉晶体结构的材料包括能够用作绝缘膜的许多类型的氧化膜。 由于所有的基底，半导体层和绝缘膜都具有刚玉晶体结构，所以可以在基底基板上实现质量好的半导体层和绝缘膜。

公开(公告)号：US12148804B2

公开(公告)日：2024-11-19

申请号：US17259622

申请日：2019-07-10

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe ,  Koji Amazutsumi

IPC: H01L29/24 ,  H01L29/417 ,  H01L29/872

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.

公开(公告)号：US12100769B2

公开(公告)日：2024-09-24

申请号：US17613346

申请日：2020-05-22

Applicant: FLOSFIA INC.

Inventor： Mitsuru Okigawa

IPC: H01L29/47 ,  H01L29/786 ,  H01L29/872

CPC classification number: H01L29/7869 ,  H01L29/47 ,  H01L29/872

Abstract: An object of the disclosure is to provide a semiconductor device with low-loss and suppressed leakage current, which is particularly useful for power devices. A semiconductor device including a semiconductor layer including an oxide semiconductor having a corundum structure as a main component, and a Schottky electrode including a first electrode layer and a second electrode layer having a higher conductivity than the first electrode layer, wherein an outer edge portion of the second electrode layer is electrically connected to the semiconductor layer at an electrical connection region through the first electrode layer, and an outer edge portion of the first electrode layer is located outside an outer edge portion of the electrical connection region.