公开(公告)号：US20180291505A1

公开(公告)日：2018-10-11

申请号：US16006010

申请日：2018-06-12

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

公开(公告)号：US10023958B2

公开(公告)日：2018-07-17

申请号：US14533496

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

公开(公告)号：US09911591B2

公开(公告)日：2018-03-06

申请号：US15142497

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Mark Saly ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/336 ,  H01L21/02 ,  C23C16/455 ,  C23C16/04 ,  C23C16/50 ,  H01L21/311 ,  H01L21/67 ,  C07F7/00 ,  H01L21/3105 ,  H01L21/32

CPC classification number: H05K1/0296 ,  C07F7/00 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/50 ,  G03G15/50 ,  G03G15/80 ,  G03G21/1652 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/3105 ,  H01L21/31133 ,  H01L21/32 ,  H01L21/67207 ,  H05K1/0269 ,  H05K1/117 ,  H05K3/4015 ,  H05K3/403 ,  H05K2201/0394 ,  H05K2201/09063 ,  H05K2201/09181 ,  H05K2201/10287 ,  H05K2201/10363

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.

公开(公告)号：US09685325B2

公开(公告)日：2017-06-20

申请号：US14795521

申请日：2015-07-09

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Jessica Sevanne Kachian

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/32 ,  C23C16/36 ,  C23C16/455

CPC classification number: H01L21/02529 ,  C23C16/325 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/4554 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

Abstract: Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma.

公开(公告)号：US20170114459A1

公开(公告)日：2017-04-27

申请号：US15297270

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Keiichi Tanaka ,  Eswaranand Venkatasubramanian ,  Mandyam Sriram ,  Bhaskar Jyoti Bhuyan ,  Pramit Manna ,  David Thompson ,  Andrew Short

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/762 ,  C23C16/02

CPC classification number: C23C16/45527 ,  C23C16/02 ,  C23C16/04 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45534 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76224

Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US20160099146A1

公开(公告)日：2016-04-07

申请号：US14873866

申请日：2015-10-02

Applicant: Applied Materials, Inc.

Inventor： Mark Saly

IPC: H01L21/02 ,  C01B33/12 ,  H01L21/28

CPC classification number: C01B33/12 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided are methods of depositing silicon-containing films utilizing certain precursors at temperatures of 400° C. or higher. Certain methods comprise exposing a substrate surface to a silicon precursor and another precursor to achieve various films. Examples of silicon-containing films which can be deposited include SiN, SiC, SiO2, SiCN, etc.

Abstract translation: 提供了在400℃或更高的温度下使用某些前体沉积含硅膜的方法。 某些方法包括将衬底表面暴露于硅前体和另一前体以实现各种膜。 可以沉积的含硅膜的实例包括SiN，SiC，SiO 2，SiCN等

公开(公告)号：US20150162191A1

公开(公告)日：2015-06-11

申请号：US14560517

申请日：2014-12-04

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson

IPC: H01L21/02 ,  C07F7/10

CPC classification number: C07F7/10 ,  C23C16/45553 ,  H01L21/02123 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.

Abstract translation: 提供了基于硅环丙烷的化合物及其制备方法。 还提供了在膜沉积工艺中使用所述化合物沉积包含硅的膜的方法。 某些方法包括将基底表面暴露于基于硅环丙烷的前体和各种组合的共试剂中。

公开(公告)号：US20240343748A1

公开(公告)日：2024-10-17

申请号：US18743333

申请日：2024-06-14

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan

IPC: C07F11/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

CPC classification number: C07F11/00 ,  C23C16/0209 ,  C23C16/0227 ,  C23C16/0254 ,  C23C16/45527 ,  C23C16/56

Abstract: Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20240339358A1

公开(公告)日：2024-10-10

申请号：US18131956

申请日：2023-04-07

Applicant: Applied Materials, Inc.

Inventor： Jesus Candelario Mendoza-Gutierrez ,  Aaron Dangerfield ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Yang Zhou ,  Yong Jin Kim ,  Carmen Leal Cervantes ,  Ge Qu ,  Zhiyuan Wu ,  Feng Chen ,  Kevin Kashefi

IPC: H01L21/768 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/76846 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/76877

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM has a general formula I to XIX, wherein R, R′, R1, R2, R3, R4, and R5 are independently selected from hydrogen (H), alkyl, alkene, alkyne, and aryl, n is from 1 to 20, m is from 1 to 20, x is from 1 to 2, and y is from 1 to 2. A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

公开(公告)号：US12084464B2

公开(公告)日：2024-09-10

申请号：US17100292

申请日：2020-11-20

Applicant: Applied Materials, Inc. ,  Wayne State University

Inventor： Thomas Knisley ,  Keenan N. Woods ,  Mark Saly ,  Charles H. Winter ,  Stefan Cwik

IPC: C07F13/00 ,  C23C16/06 ,  C23C16/455

CPC classification number: C07F13/005 ,  C23C16/06 ,  C23C16/45553

Abstract: Halide ligand free rhenium complexes are described as well as methods for depositing rhenium-containing films. Some embodiments provide a rhenium complex with a general formula of O3ReO-M-R1R2R3, where M is a group IV element, R1 is selected from H, alkyl, alkenyl, alkynyl, an aromatic ring, or alkoxy, and R2 and R3 are each independently selected from H, alkyl, alkenyl, alkynyl, an aromatic ring, or alkoxy, or R2 and R3 join together to form a ring structure or an oxo group. Some embodiments provide a rhenium complex with a general formula of Re(NR′)3(NHR″), where R′ and R″ are independently selected from H, alkyl, alkenyl, alkynyl, or an aromatic ring.