公开(公告)号：US20140016798A1

公开(公告)日：2014-01-16

申请号：US13937067

申请日：2013-07-08

Applicant: Wolfson Microelectronics plc

Inventor： Richard Ian Laming ,  Anthony Traynor

IPC: B81C1/00 ,  B81B3/00 ,  H04R3/00

CPC classification number: B81C1/00158 ,  B81B3/0027 ,  B81B2201/0257 ,  B81C1/00246 ,  B81C1/00904 ,  B81C2201/056 ,  G01L9/0073 ,  H04R3/005 ,  H04R19/005 ,  H04R19/04

Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) apparatus on a substrate comprises the steps of processing the substrate so as to fabricate an electronic circuit; depositing a first electrode that is operably coupled with the electronic circuit; depositing a membrane so that it is mechanically coupled to the first electrode; applying a sacrificial layer; depositing a structural layer and a second electrode that is operably coupled with the electronic circuit so that the sacrificial layer is disposed between the membrane and the structural layer so as to form a preliminary structure; singulating the substrate; and removing the sacrificial layer so as to form a MEMS structure, in which the step of singulating the substrate is carried out before the step of removing the sacrificial layer.

Abstract translation: 在基板上制造微电子机械系统（MEMS）装置的方法包括以下步骤：处理基板以制造电子电路; 沉积与电子电路可操作耦合的第一电极; 沉积膜，使得其机械耦合到第一电极; 施加牺牲层; 沉积与电子电路可操作地耦合的结构层和第二电极，使得牺牲层设置在膜和结构层之间，以便形成初步结构; 单片基片; 以及去除所述牺牲层以形成MEMS结构，其中在去除所述牺牲层的步骤之前执行所述衬底的单分离步骤。

公开(公告)号：US08142669B2

公开(公告)日：2012-03-27

申请号：US11676353

申请日：2007-02-19

Applicant: Akira Akiba ,  Shun Mitarai

Inventor： Akira Akiba ,  Shun Mitarai

IPC: H01L21/302 ,  B81C1/00

CPC classification number: B81C1/00896 ,  B81B2207/015 ,  B81C2201/056

Abstract: An electromechanical element includes a mechanically movable element through a hollow formed on a substrate, and a plurality of holes formed in the movable element. In the electromechanical element, the plurality of holes are arranged such that at least two holes are in a same line, at least one hole is in another line located adjacent to the one line with at least two holes, and a distance between one of the holes arranged in the same line and the other hole located at the closest position from the one of the two holes arranged in the same line is longer than a distance between the holes adjacently arranged in the same line.

Abstract translation: 机电元件包括​​通过形成在基板上的中空的机械可移动元件和形成在可移动元件中的多个孔。 在机电元件中，多个孔布置成使得至少两个孔处于相同的线中，至少一个孔位于与具有至少两个孔的一条线相邻的另一条线中，并且其中一个之间的距离 布置在同一条线上的孔和位于与布置在同一条线上的两个孔中的一个最靠近的位置处的另一个孔比相邻排列在同一直线上的孔之间的距离更长。

公开(公告)号：US20090165295A1

公开(公告)日：2009-07-02

申请号：US12233142

申请日：2008-09-18

Applicant: Adam L. Cohen ,  Gang Zhang ,  Fan-Gang Tseng

Inventor： Adam L. Cohen ,  Gang Zhang ,  Fan-Gang Tseng

IPC: H05K3/00 ,  H05K3/02 ,  H05K3/10 ,  H05K3/22 ,  C25D5/02

CPC classification number: B81C1/00611 ,  B81B2201/042 ,  B81C1/00126 ,  B81C2201/0107 ,  B81C2201/0122 ,  B81C2201/056 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H01P11/007 ,  H05K3/4647 ,  Y10T29/49155

Abstract: Various embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer. In other embodiments, electrochemically fabricated structures are formed on dielectric substrates.

Abstract translation: 各种实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种介电材料形成的多层中尺度或微结构结构的电化学制造。 在一些实施方案中，电介质材料是可UV固化的光聚合物。 在其它实施例中，在电介质基底上形成电化学制造的结构。

公开(公告)号：US20080174204A1

公开(公告)日：2008-07-24

申请号：US11676353

申请日：2007-02-19

Applicant: Akira Akiba ,  Shun Mitarai

Inventor： Akira Akiba ,  Shun Mitarai

IPC: B81B7/00 ,  B81C1/00 ,  C23F1/00

CPC classification number: B81C1/00896 ,  B81B2207/015 ,  B81C2201/056

Abstract: An electromechanical element includes a mechanically movable element through a hollow formed on a substrate, and a plurality of holes formed in the movable element. In the electromechanical element, the plurality of holes are arranged such that at least two holes are in a same line, at least one hole is in another line located adjacent to the one line with at least two holes, and a distance between one of the holes arranged in the same line and the other hole located at the closest position from the one of the two holes arranged in the same line is longer than a distance between the holes adjacently arranged in the same line.

Abstract translation: 机电元件包括​​通过形成在基板上的中空的机械可移动元件和形成在可移动元件中的多个孔。 在机电元件中，多个孔布置成使得至少两个孔处于相同的线中，至少一个孔位于与具有至少两个孔的一条线相邻的另一条线中，并且其中一个之间的距离 布置在同一条线上的孔和位于与布置在同一条线上的两个孔中的一个最靠近的位置处的另一个孔比相邻排列在同一直线上的孔之间的距离更长。

公开(公告)号：US20030132824A1

公开(公告)日：2003-07-17

申请号：US10342778

申请日：2003-01-15

Applicant: Intel Corporation

Inventor： Qing Ma

IPC: H01H051/22

CPC classification number: B81B3/007 ,  B81B2201/014 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C2201/056 ,  H01H1/20 ,  H01H59/0009 ,  H01H2001/0084 ,  H01H2059/0036 ,  H01H2059/0063 ,  Y10T29/49002 ,  Y10T29/49016 ,  Y10T29/49082 ,  Y10T29/49105 ,  Y10T29/49128 ,  Y10T29/49147

Abstract: A microelectromechanical system (MEMS) switch having a high-resonance-frequency beam is disclosed. The MEMS switch includes first and second spaced apart electrical contacts, and an actuating electrode. The beam is adapted to establish contact between the electrodes via electrostatic deflection of the beam as induced by the actuating electrode. The beam may have a cantilever or bridge structure, and may be hollow or otherwise shaped to have a high resonant frequency. Methods of forming the high-speed MEMS switch are also disclosed.

Abstract translation: 公开了一种具有高共振频率波束的微机电系统（MEMS）开关。 MEMS开关包括第一和第二间隔开的电触头和致动电极。 光束适于通过由致动电极引起的光束的静电偏转来建立电极之间的接触。 梁可以具有悬臂或桥结构，并且可以是中空的或以其它方式成形为具有高共振频率。 还公开了形成高速MEMS开关的方法。

公开(公告)号：US20020197762A1

公开(公告)日：2002-12-26

申请号：US10193804

申请日：2002-07-11

Applicant: Microscan systems Incorporated

Inventor： Andrew J. Zosel ,  Joel A. Kubby ,  Jingkuang Chen ,  Peter M. Gulvin ,  Chuang-Chia Lin ,  Alex T. Tran

IPC: H01L021/00 ,  H01L021/30 ,  H01L021/46 ,  H01L021/301 ,  H01L021/78

CPC classification number: B81C1/00666 ,  B81B2203/058 ,  B81C2201/014 ,  B81C2201/0164 ,  B81C2201/056 ,  G02B26/0833

Abstract: The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.

Abstract translation: 本发明提供一种微机械或微机电结构。 该结构通过包括在衬底层上限定由绝缘体层分离的单晶硅层上的结构的工艺来制造; 沉积和蚀刻单晶硅层上的多晶硅层，其余的聚硅氧烷形成该结构的机械或光学元件; 暴露单晶硅层的选定区域; 并释放形成的结构。

公开(公告)号：US06268232B1

公开(公告)日：2001-07-31

申请号：US09302224

申请日：1999-04-29

Applicant: Helmut Skapa ,  Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Heinz-Georg Vossenberg

Inventor： Helmut Skapa ,  Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Heinz-Georg Vossenberg

IPC: H01L2100

CPC classification number: G01P15/0802 ,  B81B2201/0235 ,  B81C1/00571 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2201/056 ,  B81C2203/0109 ,  G01P1/023

Abstract: A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.

Abstract translation: 用于制造微机械部件，特别是表面微机械加速度传感器的方法涉及准备衬底并在衬底上提供绝缘层，其中掩埋有图案化的电路迹线层。 包括第一区域和第二区域的导电层设置在绝缘层上，并且可移动元件通过形成第一多个沟槽而被构造在第一区域中，并且通过使用蚀刻剂去除至少一部分 绝缘层从导电层下面。 通过构造第二多个沟槽，形成接触元件并在第二区域中电连接到电路迹线层，并且所得到的可移动元件被封装在第一区域中。 在第二区域中形成接触元件的第二多个沟槽首先在形成在第一区域中的可移动元件的封装之后形成。

公开(公告)号：US5334342A

公开(公告)日：1994-08-02

申请号：US58521

申请日：1993-05-04

Applicant: Alan B. Harker ,  Jeffrey F. DeNatale ,  Patrick J. Hood ,  John F. Flintoff

Inventor： Alan B. Harker ,  Jeffrey F. DeNatale ,  Patrick J. Hood ,  John F. Flintoff

IPC: B81B3/00 ,  B81C99/00 ,  C23C16/02 ,  C23C16/27 ,  G02B1/11 ,  G03F7/00 ,  B29C33/76 ,  C23C16/22

CPC classification number: G02B1/118 ,  B81C1/00111 ,  B81C1/00198 ,  B81C1/0038 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/274 ,  C23C16/277 ,  G03F7/00 ,  B81B2201/035 ,  B81B2201/047 ,  B81C2201/0191 ,  B81C2201/056 ,  Y10T428/30

Abstract: A high temperature resist process is combined with microlithographic patterning for the production of materials, such as diamond films, that require a high temperature deposition environment. For diamond films, a high temperature silicon nitride resist can be used for microlithographic patterning of a silicon substrate to provide a uniform distribution of diamond nucleation sites and to improve diamond film adhesion to the substrate. A fine-grained nucleation geometry, established at the nucleation sites, is maintained as the diamond film is deposited over the entire substrate after the silicon nitride resist is removed. The process can be extended to form surface relief features, such as "moth eye" surfaces, and microstructures of fine-grained polycrystalline diamond, such as rotatable microgears and surface relief patterns, that have the desirable characteristics of hardness, wear resistance, thermal conductivity, chemical inertness, anti-reflectance, and a low coefficient of friction.

Abstract translation: 将高温抗蚀剂工艺与用于生产需要高温沉积环境的材料（例如金刚石膜）的微光刻图案组合。 对于金刚石膜，可以使用高温氮化硅抗蚀剂用于硅衬底的微光刻图案以提供金刚石成核位点的均匀分布并且改善金刚石膜对衬底的粘附。 在去除氮化硅抗蚀剂之后，在整个衬底上沉积金刚石膜，保持在成核位置建立的细晶粒成核几何形状。 该过程可以扩展以形成具有理想的硬度，耐磨性，导热性的特征的表面浮雕特征，例如“蛾眼”表面和细晶粒多晶金刚石的微观结构，例如可旋转的微观尺寸和表面浮雕图案 ，化学惰性，抗反射性和低摩擦系数。

公开(公告)号：US12070307B2

公开(公告)日：2024-08-27

申请号：US17132165

申请日：2020-12-23

Applicant: International Business Machines Corporation

Inventor： Neil Ebejer ,  Ute Drechsler ,  Patrick Ruch

IPC: A61B5/145 ,  A61B5/00 ,  A61B5/1473 ,  H05K3/00 ,  A61B10/00

CPC classification number: A61B5/14514 ,  A61B5/1473 ,  A61B5/685 ,  H05K3/0014 ,  A61B2010/008 ,  A61B2562/125 ,  B81C2201/0101 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0147 ,  B81C2201/056

Abstract: A sensor device, such as a biosensor, may comprise a polymer substrate, which is structured so as to form sets of microneedles and respective vias. The microneedles extend, each, from a base surface of the substrate. Each of the vias extends through a thickness of the substrate, thereby forming a corresponding set of apertures on the base surface. Each of the apertures is adjacent to a respective one of the microneedles. The device further may comprise two or more electrodes, these including a sensing electrode and a reference electrode. Each electrode may comprise an electrically conductive material layer that coats a region of the substrate, so as to coat at least some of the microneedles and neighboring portions of said base surface. Related devices, apparatuses, and methods of fabrication and use of such devices may be provided.

公开(公告)号：US20180237292A1

公开(公告)日：2018-08-23

申请号：US15901196

申请日：2018-02-21

Applicant: Infineon Technologies AG

Inventor： Markus Kahn ,  Anna-Katharina Kaiser ,  Soenke Pirk ,  Juergen Steinbrenner ,  Julia-Magdalena Straeussnigg

IPC: B81C1/00 ,  H04R19/04 ,  H04R19/00

CPC classification number: B81C1/00801 ,  B81C2201/0133 ,  B81C2201/0176 ,  B81C2201/053 ,  B81C2201/056 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.