Abstract:
Method and apparatus for measuring the radiation originating from one side of a wafer of semiconductor material using a pyrometer, wherein non-blackbody compensation radiation is projected onto that side to compensate for the reflectivity of the wafer of material and wherein the intensity of the non-blackbody compensation radiation is controlled subject to the amount of radiation measured by the pyrometer.
Abstract:
An interferometric sensor (10) employs a sensing optical fiber (12) and a reference optical fiber (14). The sensing fiber (12) has a coating 16 thereon responsive to radiated thermal energy while the reference fiber is shielded therefrom. Both the sensing and reference fibers are subjected to the same ambient environment so that both fibers are subjected to heating by convection or conduction in essentially the same amounts. As a result, the sensor (10) is substantially nonresponsive to convected or conducted thermal energy while being highly responsive to radiated energy, particularly in the 6-30 micron wavelength region.
Abstract:
A method for contactlessly establishing a temperature of a surface includes determining the temperature measurement values of the plurality of blind pixels and determining temperature measurement values of the plurality of measurement pixels. The method further includes determining a temperature measurement value and a temperature measurement values by subtracting the temperature measurement value of the first blind pixel of the plurality of blind pixels from a temperature measurement value of a second blind pixel of the plurality of blind. The method further includes correcting the temperature measurement values by pixel-associated temperature drift components in each case, wherein the temperature drift components are determined using the temperature measurement value and/or the temperature measurement value.
Abstract:
A semiconductor device for measuring IR radiation comprising: at least one sensor pixel; at least one reference pixel shielded from said IR radiation comprising a heater; a controller adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.
Abstract:
An infrared sensor assembly for sensing infrared radiation from an object is disclosed. The infrared sensor assembly comprises a sensor array comprising a plurality of sensing elements, provided on or embedded in a substrate extending in a substrate plane. The sensor array comprises at least two infrared sensing elements, each infrared sensing element having a radiation responsive element providing a proportionate electrical signal in response to infrared radiation incident thereto and at least two blind sensing elements, at least one blind sensing element being interspersed among the at least two sensing elements, each blind sensing element being shielded from incident infrared radiation from the object and providing a proportionate electrical signal in response to parasitic thermal fluxes. The output of the sensor array is a function of the infrared sensing elements and of the blind sensing elements such that parasitic thermal fluxes are at least partly compensated for.
Abstract:
A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.
Abstract:
Provided is an infrared image sensor for detecting infrared rays. The infrared image sensor includes a light-receiving unit including a pixel region in which a plurality of pixels are arranged and at least one reference pixel; a difference circuit for acquiring a first differential signal that is a differential signal between a signal of one pixel contained in the pixel region and a signal of the reference pixel and a second differential signal that is a differential signal between signals of two predetermined pixels out of the pixels contained in the pixel region; and a pixel signal calculating unit that calculates a signal of each of the pixels on the basis of the first differential signal and the second differential signal.
Abstract:
The invention relates to a passive microbolometer (12), comprising a reflective screen (17) and a suspended membrane with the function of radiation absorber, thermometer and electrical connection. The membrane is supported by at least two anchor elements (15) fixed to a support substrate (16). The reflective screen (17) may be embodied by at least one layer (18) of metallic material with a thickness of the order of 500 Å to 2000 Å. The screen (17) is arranged beneath the membrane in electrical contact with the membrane absorber element (13) such as to reduce the area resistance of the unit made up of the screen (17) and the absorbing element (13) and to avoid the absorption of radiation by the latter.
Abstract:
Method and device for direct, non-contact temperature measure of a body. A laser beam is reflected from the surface of the body and detected along with the Planck radiation. The detected signal is analyzed using signal correlation technique to generate an output signal proportional to the Johnson noise introduced into the reflected laser beam as a direct measure of the absolute temperature of the body.
Abstract:
A thermopile detector means for a temperature measuring instrument physically and electrically configured to supply an output signal which indicates target temperature substantially independent of the influence of ambient temperature changes. The detector means includes a first thermopile device exposed to radiation from the target and a transducer means, preferably a second thermopile device, shielded from the target and connected in series opposition to the first.