Abstract:
An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
Abstract:
A particle source in which energy selection occurs by sending a beam of electrically charged particles eccentrically through a lens so that energy dispersion will occur in an image formed by the lens. By projecting this image onto a slit in an energy selecting diaphragm, it is possible to allow only particles in a limited portion of the energy spectrum to pass. Consequently, the passed beam will have a reduced energy spread. The energy dispersed spot is imaged on the slit by a deflector. When positioning the energy dispersed spot on the slit, central beam is deflected from the axis to such an extent that it is stopped by the energy selecting diaphragm. Hereby reflections and contamination resulting from this beam in the region after the diaphragm are avoided. Also electron-electron interaction resulting from the electrons from the central beam interacting with the energy filtered beam in the area of deflector is avoided.
Abstract:
Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
Abstract:
In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
Abstract:
A cathode sub-assembly is comprised of a retainer, a cathode and a collar, each of which has smooth unthreaded surfaces that slidably engage each other. A shield serves to hold the sub-assembly in a support plate. The cathode projects from the sub-assembly into an arc chamber with a tortuous path created therebetween for passage of a plasma flow.
Abstract:
A gas field ionization ion source apparatus is provided which is small-sized, has high-performance, and is capable of performing a tilt adjustment in a state in which an emitter tip position is maintained approximately constant. An emitter (1) is surrounded by a chamber wall (4) of an emitter chamber and ions are emitted from the tip of the emitter (1). A gas that is an ion material is introduced into the emitter chamber, through an extraction electrode (3) to which a high voltage is applied and a tube (15). The emitter (1) is cooled by a freezing means (10) through a metallic net (11) and an emitter base (12). The emitter base (12) is fixed to a movable portion (13a) of a tilting means (13). The movable portion (13a) is connected to a non-movable portion (13b) through a sliding surface (14). The sliding surface (14) forms a part of a cylindrical surface whose central axis is an axis that passes through the tip of the emitter (1) and is orthogonal to an optical axis. If the surface forms such a shape, and the amount of sliding of the sliding surface (14) is controlled, control on the tilt of the emitter (1) can be performed without moving the tip of the emitter (1).
Abstract:
There is provided an ion beam generating apparatus capable of reducing power consumption and obtain highly-accurate uniformity in a substrate process without providing a mechanism to rotate a substrate. Each of ion beam generating apparatuses 1a and 1b includes a discharging tank for generating plasma, an extraction electrode including an inclined portion arranged so as to be inclined with respect to an irradiated surface for extracting an ion generated in the discharging tank, a rotating driving unit 30 provided out of the discharging tank for rotating the extraction electrode, and a rotation supporting member 31 for coupling the rotating driving unit 30 and the extraction electrode 7, wherein an insulator block 34 arranged around the rotation supporting member 31 is included in the discharging tank.
Abstract:
Provided are a large-current and highly stable gas field ionization ion source, and a high-resolution ion microscope with a large focal depth.The present invention relates to an ion microscope provided with a gas field ionization ion source, in which disposed are a refrigerator for cooling the gas field ionization ion source independent of the main body of the ion microscope, and a refrigerant circulation circuit cooling mechanism for circulating a refrigerant between the gas field ionization ion source and the refrigerator. Consequently it is possible to reduce the mechanical vibration of the refrigerator, which propagates to the gas field ionization ion source, and to achieve both the improvement of the brightness of the ion source and the improvement of ion beam focusing performance.
Abstract:
An ion source apparatus has an ion source assembly and a neutralizer. The ion source assembly has a body, a heat-dissipating device, an anode chunk and a gas distributor. The heat-dissipating device has a thermal transfer plate and a first thermal side sheet. The thermal transfer plate has a top, a protrusion and an annular disrupting recess. The protrusion is formed at the top of the thermal transfer plate. The disrupting recess is radially formed around the protrusion. The first thermal side sheet surrounds the protrusion. The gas distributor is mounted securely in the protrusion. Because the protrusion is located between the gas distributor and the first thermal side sheet and the disrupting recess is radially formed around the protrusion, accumulated ions, molecules and deposition film particles are longitudinally disrupted and do not form a short circuit between the gas distributor and the first thermal side sheet.
Abstract:
A cathode sub-assembly is comprised of a retainer, a cathode and a collar, each of which has smooth unthreaded surfaces that slidably engage each other. A shield serves to hold the sub-assembly in a support plate. The cathode projects from the sub-assembly into an arc chamber with a tortuous path created therebetween for passage of a plasma flow.