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    Micromachined electron or ion-beam source and secondary pickup for scanning probe microscopy or object modification
    21.
    发明授权
    Micromachined electron or ion-beam source and secondary pickup for scanning probe microscopy or object modification 有权
    用于扫描探针显微镜或物体修改的微加工电子或离子束源和辅助拾取器

    公开(公告)号：US07960695B1

    公开(公告)日：2011-06-14

    申请号：US11383356

    申请日：2006-05-15

    Applicant: Victor B. Kley

    Inventor： Victor B. Kley

    IPC: G01N13/16

    CPC classification number: G01Q30/02 ,  G01Q60/38 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/1205 ,  H01J2237/1503 ,  H01J2237/2583 ,  H01J2237/2803

    Abstract: An e-beam or ion beam imaging and exposure system is built into the end of an AFM cantilever which images using the scanning capabilities built into the AFM. In one embodiment, a boron doped diamond cold cathode is formed into the cantilever with an associated accelerating electrode and secondary electron collection electrode. The assembly is brought within a few nanometers of the object to be imaged or exposed using the AFM. One or more gas channels built into the cantilever assembly provide a positive pressure of inert gas to prevent oxidative erosion of the cold cathode and can bleed any surface charge build up on the sample surface. After secondaries are collected the cantilever is moved to the next area to be exposed.

    Abstract translation: 电子束或离子束成像和曝光系统内置在AFM悬臂的末端，使用内置于AFM中的扫描功能的图像。 在一个实施例中，硼掺杂的金刚石冷阴极与相关联的加速电极和二次电子收集电极形成为悬臂。 使用AFM将组件置于要成像或暴露的物体的几纳米内。 内置在悬臂组件中的一个或多个气体通道提供惰性气体的正压力，以防止冷阴极的氧化侵蚀，并且可能导致在样品表面上积累的任何表面电荷。 收集次级后，将悬臂移至下一个要暴露的区域。

    ELECTRON BEAM PROCESSING DEVICE
    22.
    发明申请
    ELECTRON BEAM PROCESSING DEVICE 有权
    电子束加工装置

    公开(公告)号：US20100012860A1

    公开(公告)日：2010-01-21

    申请号：US12502567

    申请日：2009-07-14

    Applicant: Franz Vokurka

    Inventor： Franz Vokurka

    IPC: B01J19/08

    CPC classification number: B23K15/06 ,  B23K15/002 ,  H01J37/023 ,  H01J37/147 ,  H01J37/16 ,  H01J37/315 ,  H01J2237/0245 ,  H01J2237/1503 ,  H01J2237/166

    Abstract: An electron beam processing device includes a chamber housing that defines a chamber interior space and has a first opening. A carriage is movable along the first opening. An electron beam generator is disposed on the carriage so that the generated electron beam passes through the first opening when the carriage moves along the first opening. A disk is disposed between the chamber housing and the carriage and is rotatable about a rotational axis, which is perpendicular to the first opening, at least between a first rotational position and a second rotational position. The disk has a second opening spaced from the rotational axis of the disk in the radial direction. The rotational axis of the disk is disposed so that the first opening always overlaps the second opening at least along an electron beam propagation axis when the disk rotates between the first and second rotational positions.

    Abstract translation: 电子束处理装置包括限定腔室内部空间并具有第一开口的腔室壳体。 托架可沿着第一开口移动。 电子束发生器设置在滑架上，使得当滑架沿着第一开口移动时，所产生的电子束通过第一开口。 盘被布置在腔室壳体和托架之间，并且可绕至少在第一旋转位置和第二旋转位置之间绕与第一开口垂直的旋转轴线旋转。 盘具有沿径向与盘的旋转轴线间隔开的第二开口。 盘的旋转轴线设置成使得当盘在第一和第二旋转位置之间旋转时，至少第一开口总是与电子束传播轴线重叠。

    APPARATUS AND METHODS FOR ION BEAM IMPLANTATION USING RIBBON AND SPOT BEAMS
    23.
    发明申请
    APPARATUS AND METHODS FOR ION BEAM IMPLANTATION USING RIBBON AND SPOT BEAMS 有权
    使用RIBBON和SPOT BEA的离子束植入的装置和方法

    公开(公告)号：US20090189096A1

    公开(公告)日：2009-07-30

    申请号：US12194515

    申请日：2008-08-19

    Applicant: Jiong CHEN ,  Nicholas R. White

    Inventor： Jiong CHEN ,  Nicholas R. White

    IPC: H01J37/08 ,  G21K1/00

    CPC classification number: H01J37/08 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/083 ,  H01J2237/1503 ,  H01J2237/201 ,  H01J2237/31701

    Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.

    Abstract translation: 公开了一种具有多种工作模式的离子注入装置。 离子注入装置具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 公开了一种二路光束线，其中第二路径包括并入能量过滤的减速或加速系统。 最后，公开了离子注入的方法，其中注入模式可以从目标的一维扫描切换到二维扫描。

    Ion implanter and ion implant method thereof
    27.
    发明授权
    Ion implanter and ion implant method thereof 有权
    离子注入机及其离子注入方法

    公开(公告)号：US08987691B2

    公开(公告)日：2015-03-24

    申请号：US13746257

    申请日：2013-01-21

    Applicant: Advanced Ion Beam Technology, Inc.

    Inventor： Zhimin Wan ,  John D. Pollock ,  Don Berrian

    IPC: H01J37/00 ,  H01L21/265 ,  C23C14/04 ,  C23C14/48 ,  C23C14/50 ,  H01J37/09 ,  H01J37/317

    CPC classification number: H01L21/265 ,  C23C14/04 ,  C23C14/48 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

    Abstract: An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.

    Abstract translation: 公开了一种离子注入机和离子注入方法。 基本上，晶片沿着一个方向移动，并且具有孔的孔径机构沿着另一个方向移动，使得被孔径过滤的离子束的投影面积在晶片上被二维地扫描。 因此，可以简化移动晶片所需的硬件和/或操作。 此外，当提供带状离子束时，孔的形状/尺寸可以类似于传统点波束的尺寸/形状，从而可以实现传统的二维扫描。 可选地，当将离子束注入到晶片中时，可以固定离子束路径而不扫描离子束，而在穿过离子束的孔移动期间，孔径的区域也可以是可调节的。

    Electron beam processing device
    28.
    发明授权
    Electron beam processing device 有权
    电子束处理装置

    公开(公告)号：US08076658B2

    公开(公告)日：2011-12-13

    申请号：US12502567

    申请日：2009-07-14

    Applicant: Franz Vokurka

    Inventor： Franz Vokurka

    IPC: G21K5/10 ,  B23K15/00

    CPC classification number: B23K15/06 ,  B23K15/002 ,  H01J37/023 ,  H01J37/147 ,  H01J37/16 ,  H01J37/315 ,  H01J2237/0245 ,  H01J2237/1503 ,  H01J2237/166

    Abstract: An electron beam processing device includes a chamber housing that defines a chamber interior space and has a first opening. A carriage is movable along the first opening. An electron beam generator is disposed on the carriage so that the generated electron beam passes through the first opening when the carriage moves along the first opening. A disk is disposed between the chamber housing and the carriage and is rotatable about a rotational axis, which is perpendicular to the first opening, at least between a first rotational position and a second rotational position. The disk has a second opening spaced from the rotational axis of the disk in the radial direction. The rotational axis of the disk is disposed so that the first opening always overlaps the second opening at least along an electron beam propagation axis when the disk rotates between the first and second rotational positions.

    Abstract translation: 电子束处理装置包括限定腔室内部空间并具有第一开口的腔室壳体。 托架可沿着第一开口移动。 电子束发生器设置在滑架上，使得当滑架沿着第一开口移动时，所产生的电子束通过第一开口。 盘被布置在腔室壳体和托架之间，并且可绕至少在第一旋转位置和第二旋转位置之间绕与第一开口垂直的旋转轴线旋转。 盘具有沿径向与盘的旋转轴线间隔开的第二开口。 盘的旋转轴线设置成使得当盘在第一和第二旋转位置之间旋转时，至少第一开口总是与电子束传播轴线重叠。

    Systems And Methods For Scanning A Beam Of Charged Particles
    30.
    发明申请
    Systems And Methods For Scanning A Beam Of Charged Particles 有权
    扫描束带电粒子的系统和方法

    公开(公告)号：US20110186747A1

    公开(公告)日：2011-08-04

    申请号：US13028188

    申请日：2011-02-15

    Applicant: John Ruffell

    Inventor： John Ruffell

    IPC: H01J3/32 ,  H01J3/30 ,  H01J3/34

    CPC classification number: H01L21/68764 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/049 ,  H01J2237/057 ,  H01J2237/1503 ,  H01J2237/20207 ,  H01J2237/30472 ,  H01L21/68771

    Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

    Abstract translation: 离子注入装置的系统和方法包括用于沿入射束轴产生离子束的离子源。 离子注入装置包括耦合到旋转机构的光束偏转组件，其使射束偏转组件围绕入射光束轴线旋转并偏转离子束。 至少一个晶片保持器保持目标晶片，并且旋转机构操作以将离子束引导至至少一个晶片保持器中的一个，其也旋转以保持恒定的注入角度。

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