公开(公告)号：US20160064231A1

公开(公告)日：2016-03-03

申请号：US14505168

申请日：2014-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Ankur Agarwal ,  Shahid Rauf ,  Kartik Ramaswamy

IPC: H01L21/3065

CPC classification number: H01L21/30655 ,  B81C1/00531 ,  H01J37/32357 ,  H01J37/32706 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32135

Abstract: An etch process gas is provided to a main process chamber having an electron beam plasma source, and during periodic passivation operations a remote plasma source provides passivation species to the main process chamber while ion energy is limited below an etch ion energy threshold. During periodic etch operations, flow from the remote plasma source is halted and ion energy is set above the etch threshold.

Abstract translation: 将蚀刻工艺气体提供给具有电子束等离子体源的主处理室，并且在周期性钝化操作期间，远程等离子体源向主处理室提供钝化物质，同时将离子能量限制在蚀刻离子能量阈值以下。 在周期性蚀刻操作期间，停止来自远程等离子体源的流动并将离子能量设定在蚀刻阈值以上。

公开(公告)号：US20160048111A1

公开(公告)日：2016-02-18

申请号：US14460640

申请日：2014-08-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Lawrence Wong ,  Kartik Ramaswamy ,  Yang Yang ,  Steven Lane ,  Richard Fovell

IPC: G05B13/02

CPC classification number: H01J37/32935 ,  C23F1/00 ,  H01J37/32082 ,  H01L21/67253

Abstract: Plural sensors on an interior surface of a reactor chamber are linked by respective RF communication channels to a hub inside the reactor chamber, which in turn is linked to a process controller outside of the chamber.

Abstract translation: 在反应室的内表面上的多个传感器通过相应的RF连通通道连接到反应器室内的轮毂，反应器室又连接到室外的过程控制器。

公开(公告)号：US09082591B2

公开(公告)日：2015-07-14

申请号：US13863614

申请日：2013-04-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Shahid Rauf ,  Jonathan Liu ,  Jason A. Kenney ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J7/24 ,  H05B31/26 ,  H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32082

Abstract: An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface.

Abstract translation: 电感耦合等离子体反应器具有三个同心线圈天线和分流器电路，其分别控制三个线圈天线中的每一个中的电流，通过响应于从一个线圈天线接收的线圈天线之间的期望的电流分配，改变分流器电路中的两个可变阻抗元件 用户界面。

公开(公告)号：US20150170943A1

公开(公告)日：2015-06-18

申请号：US14108719

申请日：2013-12-17

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Srinivas Nemani ,  Bradley Howard ,  Yogananada Sarode Vishwanath

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/3244

Abstract: An exemplary semiconductor processing system may include a processing chamber and a first plasma source. The first plasma source may utilize a first electrode positioned externally to the processing chamber, and the first plasma source may be configured to generate a first plasma. The processing system may further comprise a second plasma source separate from the first plasma source that utilizes a second electrode separate from the first electrode. The second electrode may be positioned externally to the processing chamber, and the second plasma source may be configured to generate a second plasma within the processing chamber. The processing system may further comprise a showerhead disposed between the relative locations of the first plasma electrode and the second plasma electrode.

Abstract translation: 示例性的半导体处理系统可以包括处理室和第一等离子体源。 第一等离子体源可以利用位于处理室外部的第一电极，并且第一等离子体源可以被配置为产生第一等离子体。 处理系统还可以包括与第一等离子体源分离的第二等离子体源，其利用与第一电极分开的第二电极。 第二电极可以位于处理室的外部，并且第二等离子体源可以被配置为在处理室内产生第二等离子体。 处理系统还可以包括布置在第一等离子体电极和第二等离子体电极的相对位置之间的喷头。

公开(公告)号：US20150170924A1

公开(公告)日：2015-06-18

申请号：US14108692

申请日：2013-12-17

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Srinivas Nemani ,  Bradley Howard ,  Yogananda Sarode Vishwanath

IPC: H01L21/3065 ,  C23C16/513 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01J37/32495 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

Abstract translation: 示例性半导体处理系统可以包括与具有顶板的处理室耦合的远程等离子体源。 入口组件可以用于将远程等离子体源与顶板耦合，并且可以包括安装组件，其在实施例中可以包括至少两个组件。 入口组件还可以包括限定与注射口流体连接的多个分配通道的前体分布组件。

公开(公告)号：US20150075717A1

公开(公告)日：2015-03-19

申请号：US14026205

申请日：2013-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Kenneth S. Collins ,  Shahid Rauf ,  Steven Lane ,  Yang Yang ,  Lawrence Wong

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J2237/3348

Abstract: An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to an array of radial toroidal channels in the ceiling.

Abstract translation: RF等离子体源具有谐振器，其短路端连接到处理室顶部并感应耦合到天花板中的径向环形通道阵列。

公开(公告)号：US20140312766A1

公开(公告)日：2014-10-23

申请号：US14319089

申请日：2014-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Jason A. Kenney ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: H01J37/32 ,  C23C16/505

CPC classification number: H01J37/3211 ,  C23C16/505 ,  H01J37/32119 ,  H01J37/32183 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract translation: 等离子体反应器具有具有两个线圈天线的顶部电感耦合等离子体源，并且对称和径向RF馈送以及围绕对称和径向RF馈送的圆柱形RF屏蔽。 径向RF馈送对称地馈送到等离子体源。

公开(公告)号：US20140265910A1

公开(公告)日：2014-09-18

申请号：US14174511

申请日：2014-02-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/3299

Abstract: Phase angle between opposing electrodes in a plasma reactor is controlled in accordance with a user selected phase angle. Direct digital synthesis of RF waveforms of different phases for the different electrodes is employed. The synthesis is synchronized with a reference clock. The address generator employed for direct digital synthesis is synchronized with an output clock signal that is generated in phase with the reference clock using a phase lock loop. The phase lock loop operates only during a limited initialization period.

Abstract translation: 根据用户选择的相位角来控制等离子体反应器中的相对电极之间的相位角。 采用不同电极的不同相的RF波形的直接数字合成。 该合成与参考时钟同步。 用于直接数字合成的地址发生器与使用锁相环与参考时钟同相产生的输出时钟信号同步。 锁相环只在有限的初始化时段内工作。

公开(公告)号：US20140232263A1

公开(公告)日：2014-08-21

申请号：US14270578

申请日：2014-05-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Jason A. Kenney ,  Shahid Rauf ,  Kenneth S. Collins ,  Yang Yang ,  Steven Lane ,  Yogananda Sarode Vishwanath

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  C23C16/45563 ,  C23C16/509 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract translation: 等离子体反应器具有架空多重线圈天线，包括平行的螺旋线圈天线以及围绕对称和径向射频馈送的对称和径向射频馈送以及圆柱形RF屏蔽。 径向RF馈送对称地馈送到等离子体源。

公开(公告)号：US20140034239A1

公开(公告)日：2014-02-06

申请号：US13958890

申请日：2013-08-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Yang Yang ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Douglas A. Buchberger, JR. ,  Lawrence Wong ,  Nipun Misra

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6833

Abstract: A plasma reactor includes an RF-driven wafer support electrode underlying a process zone and two (or more) counter electrodes overlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract translation: 等离子体反应器包括位于处理区下面的RF驱动的晶片支撑电极和覆盖处理区并面对处理区的不同部分的两个（或更多个）对电极，两个（或更多个）可变电抗连接在相应的计数器之间 电极和接地，以及控制可变电抗以控制诸如等离子体离子密度或离子能量之类的等离子体参数分布的控制器。