公开(公告)号：US20230167543A1

公开(公告)日：2023-06-01

申请号：US18101944

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Mats LARSSON ,  Kevin A. PAPKE ,  Chirag Shaileshbhai KHAIRNAR ,  Rajasekhar PATIBANDLA ,  Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/56 ,  C23C16/513 ,  C23C16/44 ,  C04B35/18 ,  C04B35/44 ,  C04B35/10 ,  C04B35/20 ,  C04B35/505 ,  C04B35/14 ,  C04B35/04 ,  C04B35/16 ,  C04B35/01 ,  C04B35/195

CPC classification number: C23C16/0281 ,  C23C16/405 ,  C23C16/56 ,  C23C16/513 ,  C23C16/4404 ,  C04B35/18 ,  C04B35/44 ,  C04B35/10 ,  C04B35/20 ,  C04B35/505 ,  C04B35/14 ,  C04B35/04 ,  C04B35/16 ,  C04B35/01 ,  C04B35/195 ,  Y10S156/914 ,  Y10T428/1317 ,  Y10T428/12743 ,  Y10T428/1259 ,  Y10T428/12667 ,  Y10T428/12764 ,  Y10T428/12604 ,  Y10T428/31504 ,  Y10T428/12736 ,  Y10T428/1266 ,  Y10T428/12597 ,  Y10T428/12611 ,  Y10T428/31678 ,  C04B2235/96

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

公开(公告)号：US20230027683A1

公开(公告)日：2023-01-26

申请号：US17961040

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Lit Ping LAM ,  Preetham RAO ,  Kartik SHAH ,  Ian ONG ,  Nyi O. MYO ,  Brian H. BURROWS

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US20200013589A1

公开(公告)日：2020-01-09

申请号：US16401871

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan BALARAMAN ,  Sathyanarayana BINDIGANAVALE ,  Rajasekhar PATIBANDLA ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR ,  Mats LARSSON ,  Kevin A. PAPKE ,  William M. LU

IPC: H01J37/32 ,  H01L21/687 ,  C23C14/16 ,  C23C14/06 ,  C23C16/06 ,  C23C16/34

Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

公开(公告)号：US20180066382A1

公开(公告)日：2018-03-08

申请号：US15809088

申请日：2017-11-10

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Anzhong CHANG ,  Edric TONG ,  Kin Pong LO ,  James Francis MACK ,  Zhiyuan YE ,  Kartik SHAH ,  Errol Antonio C. Sanchez ,  David K. CARLSON ,  Satheesh KUPPURAO ,  Joseph M. RANISH

IPC: C30B25/14 ,  C30B25/10 ,  C30B25/08 ,  H01L21/67

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

公开(公告)号：US20160348276A1

公开(公告)日：2016-12-01

申请号：US15167480

申请日：2016-05-27

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Surajit KUMAR ,  Kartik SHAH ,  Mehmet Tugrul SAMIR

IPC: C30B25/16 ,  C23C16/48

CPC classification number: C23C16/482 ,  C23C16/481 ,  C30B25/08 ,  C30B25/105

Abstract: A reflector for processing a semiconductor substrate is provided. The reflector includes an annular body having an outer edge, an inner edge, and a bottom side. The bottom side includes a plurality of first surfaces and a plurality of second surfaces. Each first surface and each second surface is positioned at a different angular location around the annular body. Each first surface is a curved surface having a radius of curvature from about 1.50 inches to about 2.20 inches.

Abstract translation: 提供了一种用于处理半导体衬底的反射器。 反射器包括具有外边缘，内边缘和底侧的环形体。 底侧包括多个第一表面和多个第二表面。 每个第一表面和每个第二表面位于围绕环形体的不同的角位置。 每个第一表面是具有约1.50英寸至约2.20英寸的曲率半径的曲面。

公开(公告)号：US20160133504A1

公开(公告)日：2016-05-12

申请号：US14885016

申请日：2015-10-16

Applicant: Applied Materials, Inc.

Inventor： Schubert S. CHU ,  Kartik SHAH ,  Anhthu NGO ,  Karthik RAMANATHAN ,  Nitin PATHAK ,  Nyi O. MYO ,  Paul BRILLHART ,  Richard O. COLLINS ,  Kevin Joseph BAUTISTA ,  Edric TONG ,  Zhepeng CONG ,  Anzhong CHANG ,  Kin Pong LO ,  Manish HEMKAR

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  C23C16/4583 ,  H01L21/67115

Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

Abstract translation: 本公开的实施方式一般涉及用于半导体衬底的热处理的基座。 在一个实施方式中，基座包括围绕并联接到内部区域的第一边缘和设置在内边缘和第一边缘之间的第二边缘。 第二边缘包括具有形成在其中的多个切口的成角度的支撑表面，并且成角度的支撑表面相对于内部区域的顶部表面倾斜。

公开(公告)号：US20150340266A1

公开(公告)日：2015-11-26

申请号：US14698793

申请日：2015-04-28

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  H01L21/673

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract translation: 在一个实施例中，提供了用于热处理的基座。 基座包括围绕并连接到内部盘的外缘，外缘具有内边缘和外边缘。 所述感受器还包括一个或多个结构，用于当所述基底由所述基座支撑时减小基底和所述基座之间的接触表面积。 所述一个或多个结构中的至少一个结合到靠近外缘的内边缘的内部盘。

公开(公告)号：US20150233016A1

公开(公告)日：2015-08-20

申请号：US14613186

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Anzhong CHANG ,  Edric TONG ,  Kin Pong LO ,  James Francis MACK ,  Zhiyuan YE ,  Kartik SHAH ,  Errol Antonio C. SANCHEZ ,  David K. CARLSON ,  Satheesh KUPPURAO ,  Joseph M. RANISH

IPC: C30B25/14 ,  C30B25/08

CPC classification number: C30B25/14 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67115

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

Abstract translation: 本文提供的实施方案通常涉及用于将气体输送到半导体处理室的装置。 外延半导体处理室的上部石英圆顶具有形成在其中的多个孔，前体气体通过上部圆顶的孔设置在腔室的处理容积中。 气体输送管从圆顶的孔延伸到法兰盘，在该法兰盘中管耦合到气体输送管线。 气体输送装置使得气体能够通过石英上部圆顶被输送到衬底上方的处理体积。