公开(公告)号：US09580302B2

公开(公告)日：2017-02-28

申请号：US14207433

申请日：2014-03-12

Applicant: Versana Micro Inc.

Inventor： Bishnu Prasanna Gogoi

IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

Abstract translation: 提供了具有多个传感器的蜂窝电话，该传感器被配置为检测和测量不同的感兴趣的参数。 手机包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 手机将要直接测量的第一个参数耦合到直接传感器。 相反，手机可以间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到手机。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

公开(公告)号：US20160376146A1

公开(公告)日：2016-12-29

申请号：US14748482

申请日：2015-06-24

Applicant: Raytheon Company

Inventor： Buu Q. Diep ,  Adam M. Kennedy ,  Thomas Allan Kocian ,  Mark Lamb

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0058 ,  B81B7/0041 ,  B81B2201/0207 ,  B81B2201/04 ,  B81C1/00269 ,  B81C1/00317 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/0145 ,  B81C2203/019

Abstract: A microelectromechanical systems (MEMS) package includes a substrate extending between a first pair of outer edges to define a length and a second pair of outer edges to define a width. A seal ring assembly is disposed on the substrate and includes at least one seal ring creating a first boundary point adjacent to at least one MEMS device and a second boundary point adjacent at least one of the outer edges. The package further includes a window lid on the seal ring assembly to define a seal gap containing the at least one MEMS device. The seal ring assembly anchors the window lid to the substrate at the second boundary point such that deflection of the window lid into the seal gap is reduced.

Abstract translation: 微机电系统（MEMS）封装包括在第一对外边缘之间延伸以限定长度的基板和限定宽度的第二对外边缘。 密封环组件设置在基板上，并且包括至少一个密封环，其形成与至少一个MEMS装置相邻的第一边界点和邻近至少一个外边缘的第二边界点。 封装还包括在密封环组件上的窗口盖，以限定包含至少一个MEMS器件的密封间隙。 密封圈组件在第二边界点将窗口盖固定到基底，使得窗口盖进入密封间隙的偏转减小。

公开(公告)号：US20160362293A1

公开(公告)日：2016-12-15

申请号：US14738745

申请日：2015-06-12

Applicant: InvenSense, Inc.

Inventor： Peter SMEYS ,  Martin LIM

IPC: B81B7/00

CPC classification number: B81B7/007 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00238 ,  B81C2203/0785 ,  B81C2203/0792 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A sensor chip combining a substrate comprising at least one CMOS circuit, a MEMS substrate and another substrate comprising at least one CMOS circuit in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first substrate with a first surface and a second surface comprising at least one CMOS circuit; a MEMS substrate with a first surface and a second surface; and a second substrate comprising at least one CMOS circuit. Where the first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the MEMS substrate. The second surface of the MEMS substrate is attached to the second substrate. The first substrate, the MEMS substrate, the second substrate and the packaging substrate are mechanically attached and provided with electrical inter-connects.

Abstract translation: 公开了一种传感器芯片，其组合包括至少一个CMOS电路，MEMS基板和包括垂直堆叠的一个封装中的至少一个CMOS电路的另一基板的基板。 所述封装包括传感器芯片，还包括具有第一表面的第一基板和包括至少一个CMOS电路的第二表面; 具有第一表面和第二表面的MEMS衬底; 以及包括至少一个CMOS电路的第二衬底。 其中第一衬底的第一表面附接到封装衬底，并且第一衬底的第二表面附接到MEMS衬底的第一表面。 MEMS基板的第二表面附接到第二基板。 第一基板，MEMS基板，第二基板和封装基板机械地连接并设置有电连接。

公开(公告)号：US20160167953A1

公开(公告)日：2016-06-16

申请号：US15049339

申请日：2016-02-22

Applicant: Versana Micro Inc

Inventor： BISHNU PRASANNA GOGOI

IPC: B81B7/02

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

Abstract translation: 公开了一种单片集成多传感器（MIMS）。 MIM集成电路包括多个传感器。 例如，集成电路可以包括三个或更多个传感器，其中每个传感器测量不同的参数。 三个或更多个传感器可以共享一个或多个层以形成每个传感器结构。 在一个实施例中，三个或更多个传感器可以包括MEM传感器结构。 可以形成在MIM集成电路上的传感器的示例是惯性传感器，压力传感器，触觉传感器，湿度传感器，温度传感器，麦克风，力传感器，负载传感器，磁传感器， 流量传感器，光传感器，电场传感器，电阻抗传感器，电偶皮响应传感器，化学传感器，气体传感器，液体传感器，固体传感器和生物传感器。

公开(公告)号：US09266717B2

公开(公告)日：2016-02-23

申请号：US14207419

申请日：2014-03-12

Applicant: Versana Micro Inc.

Inventor： Bishnu Prasanna Gogoi

IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。

公开(公告)号：US20140268524A1

公开(公告)日：2014-09-18

申请号：US14207477

申请日：2014-03-12

Applicant: BISHNU PRASANNA GOGOI

Inventor： BISHNU PRASANNA GOGOI

IPC: H05K7/02

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. An example of a distributed sensor system comprises a first sensor node and a second sensor node. Each sensor node has a plurality of sensors or a MIMS device. Each sensor node can also include electronic circuitry or a power source. A joint region is coupled between a first flexible interconnect region and a second flexible interconnect region. The first sensor node is coupled to the first flexible interconnect region. Similarly, the second sensor node is coupled to the second flexible interconnect region.

Abstract translation: 公开了一种在操作环境中提供空间和时间数据的分布式传感器系统。 分布式传感器节点可以耦合在一起以形成分布式传感器系统。 例如，分布式传感器系统包括物理耦合并且能够以分布式方式收集关于环境的数据的传感器节点（SN）的集合。 分布式传感器系统的示例包括第一传感器节点和第二传感器节点。 每个传感器节点具有多个传感器或MIMS装置。 每个传感器节点还可以包括电子电路或电源。 联接区域耦合在第一柔性互连区域和第二柔性互连区域之间。 第一传感器节点耦合到第一柔性互连区域。 类似地，第二传感器节点耦合到第二柔性互连区域。

公开(公告)号：US20140264658A1

公开(公告)日：2014-09-18

申请号：US14207433

申请日：2014-03-12

Applicant: BISHNU PRASANNA GOGOI

Inventor： BISHNU PRASANNA GOGOI

IPC: H01L27/02 ,  H01L27/16

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

Abstract translation: 提供了具有多个传感器的蜂窝电话，该传感器被配置为检测和测量不同的感兴趣的参数。 手机包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 手机将要直接测量的第一个参数耦合到直接传感器。 相反，手机可以间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到手机。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

公开(公告)号：US20140053966A1

公开(公告)日：2014-02-27

申请号：US13688714

申请日：2012-11-29

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy

IPC: B05D5/06

CPC classification number: B81C1/00325 ,  B05D5/061 ,  B81B7/0067 ,  B81B2201/0207 ,  B81C2203/0118

Abstract: Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.

Abstract translation: 提供了通过盖晶片的抗反射涂层引起的减少晶片弓的方法。 该方法可以利用其中具有至少一个开口的荫罩，其位于帽晶片中的相对凹陷区域。 该方法还可以包括将至少一层抗反射涂层材料通过荫罩沉积到盖晶片的平面侧上，以在平面侧上提供不连续的涂层。

公开(公告)号：US20130112876A1

公开(公告)日：2013-05-09

申请号：US13670892

申请日：2012-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-hyun NAM ,  Hae-seok PARK

IPC: G01J5/12

CPC classification number: G01J5/12 ,  B81B2201/0207 ,  G01J5/024 ,  G01J5/0285 ,  G01J5/045 ,  G01J5/046 ,  G01J5/06 ,  G01J5/0853

Abstract: In some example embodiments, an infrared detector may comprise a substrate; a resonator spaced apart from the substrate, the resonator absorbing incident infrared light; a thermoelectric material layer contacting the resonator and having a variable resistance according to temperature variation due to the absorbed incident infrared light; a lead wire electrically connecting the thermoelectric material layer and the substrate; a heat separation layer between the substrate and the thermoelectric material layer, the heat separation layer preventing heat from being transferred from the thermoelectric material layer to the substrate; and/or a ground plane layer preventing the incident infrared light from proceeding toward the substrate. The heat separation layer may at least reduce heat transfer from the thermoelectric material layer to the substrate. The ground plane layer may at least reduce an amount of the incident infrared light that reaches the substrate.

Abstract translation: 在一些示例性实施例中，红外检测器可以包括基底; 谐振器，其与所述衬底间隔开，所述谐振器吸收入射的红外光; 接触谐振器的热电材料层，并且由于吸收的入射红外光而具有根据温度变化的可变电阻; 电连接所述热电材料层和所述基板的引线; 在所述基板和所述热电材料层之间的热分离层，所述热分离层防止热量从所述热电材料层转移到所述基板; 和/或防止入射的红外光向衬底延伸的接地层。 热分离层可以至少减少从热电材料层到基底的热传递。 接地层可以至少减少到达基板的入射红外光的量。

公开(公告)号：US08004162B2

公开(公告)日：2011-08-23

申请号：US12545524

申请日：2009-08-21

Applicant: Nobuyuki Koike ,  Takashi Tamura

Inventor： Nobuyuki Koike ,  Takashi Tamura

IPC: H01L41/08

CPC classification number: B81B3/0081 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81B2201/032 ,  G01C19/56 ,  G01C25/00 ,  H01L41/0933 ,  H01L41/1132 ,  H01L41/1136 ,  H01L41/316 ,  Y10T29/42

Abstract: A piezoelectric device is provided and includes a substrate, a first electrode film, a piezoelectric film, and a second electrode film. The first electrode film is formed on the substrate. The piezoelectric film is represented by Pb1+X(ZrYTi1−Y)O3+X(0≦X≦0.3, 0≦Y≦0.55) and a peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less. The second electrode film is laminated on the piezoelectric film.

Abstract translation: 提供一种压电装置，包括基板，第一电极膜，压电膜和第二电极膜。 第一电极膜形成在基板上。 压电薄膜由Pb1 + X（ZrYTi1-Y）O3 + X（0＆nlE; X＆lt; NlE; 0.3,0＆nlE; Y＆nlE; 0.55）表示，通过X射线衍射法测得的烧绿石相的峰强度为10％ 相对于钙钛矿相的（100）面取向，（001）面取向，（110）面取向，（101）面取向和（111）面取向的峰值强度之和小， 所述压电膜形成在所述第一电极膜上，膜厚度为400nm以上且1000nm以下。 第二电极膜层叠在压电膜上。