公开(公告)号：US20050064137A1

公开(公告)日：2005-03-24

申请号：US10988333

申请日：2004-11-11

Applicant: Alan Hunt ,  Ernest Hasselbrink ,  Edgar Meyhofer ,  Kevin Ke

Inventor： Alan Hunt ,  Ernest Hasselbrink ,  Edgar Meyhofer ,  Kevin Ke

IPC: B23K26/06 ,  B23K26/073 ,  B23K26/36 ,  B23K26/38 ,  B32B3/10

CPC classification number: B23K26/06 ,  B23K26/0624 ,  B23K26/0665 ,  B23K26/073 ,  B23K26/1224 ,  B23K26/142 ,  B23K26/146 ,  B23K26/36 ,  B23K26/361 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2101/40 ,  B23K2103/30 ,  B23K2103/50 ,  B81C1/00492 ,  B81C2201/0143 ,  B82Y30/00 ,  B82Y40/00 ,  C03C23/0025 ,  Y10T428/24273 ,  Y10T428/24562 ,  Y10T428/24744

Abstract: The invention provides a versatile technique for machining of nanometer-scale features using tightly-focused ultrashort laser pulses. By the invention, the size of features can be reduced far below the wavelength of light, thus enabling nanomachining of a wide range of materials. The features may be extremely small, of nanometer size, and are highly reproducible.

Abstract translation: 本发明提供了一种用于使用紧密聚焦的超短激光脉冲来加工纳米尺度特征的通用技术。 通过本发明，特征的尺寸可以降低到远低于光的波长，从而使得能够对宽范围的材料进行纳米加工。 特征可能非常小，纳米尺寸，并且具有高度可重复性。

公开(公告)号：US20040099636A1

公开(公告)日：2004-05-27

申请号：US10301208

申请日：2002-11-21

Inventor： Lawrence Scipioni

IPC: C23F001/00

CPC classification number: G21K1/087 ,  B81C1/00547 ,  B81C2201/0143 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3056 ,  H01J37/3174 ,  H01J2237/31732

Abstract: The present disclosure relates to a method for generating a three-dimensional microstructure in an object. In one embodiment, a method for fabricating a microscopic three-dimensional structure is provided. A work piece is provided that includes a target area at which the three-dimensional structure is to be fabricated. The target area has a plurality of virtual dwell points. A shaped beam is provided to project onto the work piece. The intersection of the shaped beam with the work piece defines a beam incidence region that has a desired shape. The beam incidence region is sufficiently large to encompass multiple ones of the virtual dwell points. The shaped beam is moved across the work piece such that different ones of the virtual dwell points come into it and leave it as the beam moves across the work piece thereby providing different doses to different ones of the virtual dwell points as the different dwell points remain in the beam incidence region for different lengths of time during the beam scan. In this way, a desired dose array of beam particles is applied onto the target area to form the three dimensional microstructure.

Abstract translation: 本公开涉及一种用于在物体中产生三维微结构的方法。 在一个实施例中，提供了一种用于制造微观三维结构的方法。 提供了包括要制造三维结构的目标区域的工件。 目标区域具有多个虚拟驻留点。 提供成形梁以投影到工件上。 成形梁与工件的交点限定了具有所需形状的射束入射区域。 光束入射区域足够大以包含多个虚拟驻留点。 成形的梁移动穿过工件，使得不同的虚拟停留点进入并离开它，当梁移动穿过工件，从而当不同的停留点保持不同时向不同的虚拟停留点提供不同的剂量 在光束入射区域中在束扫描期间不同长度的时间。 以这种方式，将期望的束粒子的剂量阵列施加到目标区域上以形成三维微结构。

公开(公告)号：US06627842B1

公开(公告)日：2003-09-30

申请号：US09374905

申请日：1999-08-13

Applicant: Stephen J. Fonash ,  A. Kaan Kalkan

Inventor： Stephen J. Fonash ,  A. Kaan Kalkan

IPC: B23K1500

CPC classification number: B81C1/00111 ,  B81C1/00492 ,  B81C2201/0143

Abstract: The method of the invention produces protruding features on a glass layer. Initially, a conductive layer is applied to the glass layer and is coupled to a source of reference potential. This conductive layer prevents a build-up of electrons in the glass layer when it is exposed to an electron beam. Thereafter, an electron beam is directed at combined layers in areas where protruding features are to be produced. The energy, current density and duration of application of the electron beam are controlled so as to create a melt/softened region within the glass layer. Such softening and differences in expansion rates between the softened glass and the surrounding glass causes a protruding feature to appear on the surface of the glass layer.

Abstract translation: 本发明的方法在玻璃层上产生突出特征。 最初，将导电层施加到玻璃层并耦合到参考电位源。 当导电层暴露于电子束时，该导电层防止玻璃层中电子的积聚。 此后，在要产生突出特征的区域中电子束被引导到组合层。 控制电子束的能量，电流密度和持续时间以在玻璃层内产生熔融/软化区域。 软化玻璃和周围玻璃之间的这种软化和膨胀率的差异导致出现在玻璃层的表面上的突出特征。

公开(公告)号：US11703331B2

公开(公告)日：2023-07-18

申请号：US17205562

申请日：2021-03-18

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Inventor： Khalil Najafi ,  Sajal Singh ,  Jae Yoong Cho

IPC: G01C19/5783 ,  G01C19/00 ,  H03H3/007 ,  G01C19/5691 ,  B81B3/00 ,  H03H9/02 ,  G01C19/5684 ,  B81C1/00 ,  H03H9/24

CPC classification number: G01C19/5783 ,  B81B3/0021 ,  B81C1/00444 ,  G01C19/005 ,  G01C19/5684 ,  G01C19/5691 ,  H03H3/0072 ,  H03H9/02259 ,  H03H9/2405 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0143 ,  H03H2009/02496

Abstract: Three-dimensional (3D) micro-scale shells are presented with openings of various sizes and geometries on the surface. The shell consist of a suspended ring-shaped resonator, multiple support beams, a support post, and a cap region that connects the support beams to the support post. Shells with openings of various sizes and geometries allow the creation of micro electromechanical systems (MEMS) sensors and actuators with a wide range of engineered mechanical and electrical properties. The openings on the shell surface can, for example, control the mechanical quality factor (Q) and resonance frequencies of the shell when the shell is used as a suspended proof mass of a mechanical resonator of a vibratory gyroscope. The shells can also serve as mechanical supporting layers and/or an electrode connection layer for MEMS actuators and sensors that use 3D shells as proof masses.

公开(公告)号：US11673797B2

公开(公告)日：2023-06-13

申请号：US17192126

申请日：2021-03-04

Applicant: Shanghai Industrial μTechnology Research Institute

Inventor： Shinan Wang

IPC: B81C1/00 ,  B81B1/00 ,  G01L9/00

CPC classification number: B81C1/00047 ,  B81B1/002 ,  G01L9/0042 ,  B81B2201/0264 ,  B81B2201/051 ,  B81B2203/0315 ,  B81C2201/0143 ,  B81C2201/0146 ,  B81C2201/0181

Abstract: A microstructure and a method for manufacturing the same includes: disposing a liquid film on a surface of a substrate, wherein a solid-liquid interface is formed where the liquid film is in contact with the substrate; and irradiating the substrate with a laser of a predetermined waveband to etch the substrate at the solid-liquid interface, wherein the position where the laser is irradiated on the solid-liquid interface moves at least along a direction parallel to the surface of the substrate, and the absorption rate of the liquid film for the laser is greater than the absorption rate of the substrate for the laser.

公开(公告)号：US20180194616A1

公开(公告)日：2018-07-12

申请号：US15743326

申请日：2016-05-24

Applicant: Robert Bosch GmbH

Inventor： Joerg Muchow ,  Rainer Straub ,  Stefan Pinter

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00103 ,  B81B7/0058 ,  B81B2201/042 ,  B81B2203/0384 ,  B81C1/00317 ,  B81C2201/0133 ,  B81C2201/0143 ,  B81C2201/0154 ,  B81C2203/0136 ,  G02B1/14 ,  G02B26/0833

Abstract: A manufacturing method for a micromechanical window structure including the steps: providing a substrate, the substrate having a front side and a rear side; forming a first recess on the front side; forming a coating on the front side and on the first recess; and forming a second recess on the rear side, so that the coating is at least partially exposed, whereby a window is formed by the exposed area of the coatings.

公开(公告)号：US10020200B1

公开(公告)日：2018-07-10

申请号：US14966165

申请日：2015-12-11

Applicant: Multibeam Corporation

Inventor： Kevin M. Monahan ,  Theodore A. Prescop ,  Michael C. Smayling ,  David K. Lam

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/308 ,  H01L21/66

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

公开(公告)号：US10003014B2

公开(公告)日：2018-06-19

申请号：US14310844

申请日：2014-06-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L21/311 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  G11C2211/5615 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

公开(公告)号：US20180005922A1

公开(公告)日：2018-01-04

申请号：US15630363

申请日：2017-06-22

Applicant: CORNING INCORPORATED

Inventor： Daniel Wayne Levesque, JR. ,  Garrett Andrew Piech ,  Aric Bruce Shorey

IPC: H01L23/48 ,  B81C1/00 ,  H01L21/268 ,  H01L21/683 ,  H01L21/311 ,  B81B7/00 ,  H01L21/762 ,  H01L21/768 ,  H01L21/306

CPC classification number: H01L23/481 ,  B81B7/0006 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2203/031 ,  H01L21/268 ,  H01L21/30604 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/49827 ,  H01L2221/68359

Abstract: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

公开(公告)号：US20170362082A1

公开(公告)日：2017-12-21

申请号：US15610987

申请日：2017-06-01

Applicant: HITACHI, LTD.

Inventor： Keiji WATANABE ,  Shuntaro MACHIDA ,  Katsuya MIURA ,  Aki TAKEI ,  Tetsufumi KAWAMURA ,  Nobuyuki SUGII ,  Daisuke RYUZAKI

IPC: B81C1/00 ,  B81C99/00

CPC classification number: B81C1/00531 ,  B05D3/064 ,  B81C99/0025 ,  B81C2201/0132 ,  B81C2201/0136 ,  B81C2201/0143 ,  Y10S148/042 ,  Y10S438/924

Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.