Abstract:
A method for fabricating packaged semiconductor devices (100) with an open cavity (110a) in panel format; placing (process 201) on an adhesive carrier tape a panel-sized grid of metallic pieces having a flat pad (230) and symmetrically placed vertical pillars (231); attaching (process 202) semiconductor chips (101) with sensor systems face-down onto the tape; laminating (process 203) and thinning (process 204) low CTE insulating material (234) to fill gaps between chips and grid; turning over (process 205) assembly to remove tape; plasma-cleaning assembly front side, sputtering and patterning (process 206) uniform metal layer across assembly and optionally plating (process 209) metal layer to form rerouting traces and extended contact pads for assembly; laminating (process 212) insulating stiffener across panel; opening (process 213) cavities in stiffener to access the sensor system; and singulating (process 214) packaged devices by cutting metallic pieces.
Abstract:
Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
Abstract:
In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer.
Abstract:
This disclosure provides systems, methods, and apparatus for fabricating electromechanical systems devices. In one aspect, a method of sealing an electromechanical systems device includes etching a sacrificial layer. The sacrificial layer is formed between a surface of a substrate and a shell layer and is etched through etch holes in the shell layer formed over the electromechanical systems device. The etch holes in the shell layer have a diameter greater than about one micron. The shell layer is then treated. A seal layer is deposited on the treated shell layer. The seal layer hermetically seals the electromechanical systems device.
Abstract:
An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.
Abstract:
A thin film device and fabrication method providing optimum tear resistance. A thin film layer is formed with a first and second of rows of holes. The holes in each row are spaced-apart along an axis which extends along an edge of the layer. The holes in one row are in overlapping relationship with adjacent holes in the other row. The holes have a diameter which is sufficiently large so that an imaginary line extending perpendicular from any location along the edge will intersect at least one hole, thus preventing further propagation of any tears or cracks which start from the edge.
Abstract:
An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.
Abstract:
Multilayer structures are electrochemically fabricated on a temporary (e.g. conductive) substrate and are thereafter bonded to a permanent (e.g. dielectric, patterned, multi-material, or otherwise functional) substrate and removed from the temporary substrate. In some embodiments, the structures are formed from top layer to bottom layer, such that the bottom layer of the structure becomes adhered to the permanent substrate, while in other embodiments the structures are formed from bottom layer to top layer and then a double substrate swap occurs. The permanent substrate may be a solid that is bonded (e.g. by an adhesive) to the layered structure or it may start out as a flowable material that is solidified adjacent to or partially surrounding a portion of the structure with bonding occurring during solidification. The multilayer structure may be released from a sacrificial material prior to attaching the permanent substrate or it may be released after attachment.
Abstract:
This method for sealing a cavity of a component placed in the chamber is carried out by physical vapour deposition (PVD) of germanium or silicon.
Abstract:
A method for applying anti-stiction material to a micro device includes encapsulating a micro device in a chamber, vaporizing anti-stiction material in a container to form vaporized anti-stiction material, transferring the vaporized anti-stiction material from the container to the chamber, and depositing the vaporized anti-stiction material on a surface of the micro device.