公开(公告)号：US09865421B2

公开(公告)日：2018-01-09

申请号：US15291962

申请日：2016-10-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Davide Giuseppe Patti ,  Gianleonardo Grasso

IPC: H01L29/76 ,  H01L29/94 ,  H01J9/02 ,  H01L29/78 ,  H01L29/12 ,  H01L29/66 ,  H01J21/10 ,  G01K7/01 ,  H01J1/304

CPC classification number: H01J9/025 ,  G01K7/01 ,  H01J1/3044 ,  H01J21/10 ,  H01J21/105 ,  H01L29/12 ,  H01L29/66969 ,  H01L29/7827

Abstract: An integrated vacuum microelectronic structure is described as having a highly doped semiconductor substrate, a first insulating layer placed above said doped semiconductor substrate, a first conductive layer placed above said first insulating layer, a second insulating layer placed above said first conductive layer, a vacuum trench formed within said first and second insulating layers and extending to the highly doped semiconductor substrate, a second conductive layer placed above said vacuum trench and acting as a cathode, a third metal layer placed under said highly doped semiconductor substrate and acting as an anode, said second conductive layer is placed adjacent to the upper edge of said vacuum trench, the first conductive layer is separated from said vacuum trench by portions of said second insulating layer and is in electrical contact with said second conductive layer.

公开(公告)号：US09633812B1

公开(公告)日：2017-04-25

申请号：US15281768

申请日：2016-09-30

Applicant: William J. Senisi

Inventor： William J. Senisi

IPC: H01J19/78 ,  H01J21/10

CPC classification number: H01J19/78 ,  H01J21/10 ,  H03F3/183 ,  H03F3/187 ,  H03F2200/03 ,  H03F2200/549 ,  H03F2200/91

Abstract: Various examples are directed to analog vacuum tube emulator circuits. In various examples, a vacuum tube emulator circuit may comprise a first circuit and a second circuit. The first circuit may be effective to receive, a first voltage, a second voltage, and a third voltage. The first circuit may be effective to develop, at an input of the first circuit, a first current based on the first voltage, the second voltage, and the third voltage. The first circuit may output the first current to an output node. The second circuit may be effective to receive the first voltage, the second voltage, and the third voltage. The second circuit may be effective to develop, at an input of the second circuit, a second current based on the first voltage, the second voltage, and the third voltage. The second circuit may output the second current to the output node.

公开(公告)号：US20160211107A1

公开(公告)日：2016-07-21

申请号：US15000392

申请日：2016-01-19

Applicant: NORITAKE ITRON CORPORATION ,  NORITAKE CO., LIMITED

Inventor： Kazunori TATSUDA ,  Tadami MAEDA ,  Misa YAMANAKA

IPC: H01J21/06 ,  H01J19/70

CPC classification number: H01J21/06 ,  H01J19/32 ,  H01J19/38 ,  H01J19/70 ,  H01J21/10

Abstract: An object of the present invention is to provide a vacuum tube with a structure close to that of an inexpensive and easily available vacuum fluorescent display which easily operates as an analog amplifier. A vacuum tube subject to the present invention comprises: a filament which is tensioned linearly and emits thermoelectrons, an anode arranged parallel to the filament, and a grid arranged between the filament and the anode such that the grid faces the anode. The present invention is characterized in that a distance between the filament and the grid is between 0.2 mm and 0.6 mm, including 0.2 mm and 0.6 mm.

Abstract translation: 本发明的一个目的是提供一种具有接近于便于操作的模拟放大器的便宜且容易获得的真空荧光显示器的结构的真空管。 根据本发明的真空管包括：线状拉伸并发射热电子的细丝，平行于灯丝布置的阳极和布置在灯丝和阳极之间的格栅，使得栅格面向阳极。 本发明的特征在于，细丝与网格之间的距离在0.2mm至0.6mm之间，包括0.2mm和0.6mm。

公开(公告)号：US09099272B2

公开(公告)日：2015-08-04

申请号：US14250932

申请日：2014-04-11

Applicant: Micron Technology, Inc.

Inventor： Neal R. Rueger

IPC: H01J21/00 ,  H01J9/18 ,  B82Y15/00 ,  H01J21/04 ,  H01J21/10 ,  H01J9/02 ,  H01J63/02 ,  B82Y99/00

CPC classification number: H01J9/18 ,  B82Y15/00 ,  B82Y99/00 ,  H01J9/025 ,  H01J21/04 ,  H01J21/10 ,  H01J63/02 ,  H01J2201/30469 ,  Y10S977/939

Abstract: The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

Abstract translation: 本公开包括场发射装置实施例。 本公开还包括用于形成场发射器件的方法实施例。 一个装置实施例包括限定内部空间的壳体，该内部空间包括下部分和上部部分，位于壳体下部的阴极，耦合到阴极的细长纳米结构，位于壳体上部的阳极，以及 位于细长纳米结构和阳极之间的控制网格，以控制阳极和细长纳米结构之间的电子流。

公开(公告)号：US09093508B1

公开(公告)日：2015-07-28

申请号：US14684044

申请日：2015-04-10

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

Inventor： Deyuan Xiao

IPC: H01L29/775 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/775 ,  B82Y40/00 ,  H01J21/10 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/1033 ,  H01L29/26 ,  H01L29/42392 ,  H01L29/66477 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/78696

Abstract: A method is provided for fabricating a nano field-effect vacuum tube. The method includes providing a substrate having an insulating layer and a sacrificial layer; and forming a sacrificial line, a source sacrificial layer and a drain sacrificial layer. The method also includes forming a trench in the insulating layer; and forming a dielectric layer on the surface of the sacrificial line. Further, the method includes forming a metal layer on the dielectric layer to fill up the trench, cover the sacrificial line and expose the source sacrificial layer and the drain sacrificial layer; and removing the source sacrificial layer and the drain sacrificial layer. Further, the method also includes removing the sacrificial line to form a through channel; forming an isolation layer on the metal layer; and forming a source region and a drain region on the insulating layer at both ends of the metal layer.

Abstract translation: 提供了一种用于制造纳米场效应真空管的方法。 该方法包括提供具有绝缘层和牺牲层的衬底; 以及形成牺牲线，源牺牲层和漏极牺牲层。 该方法还包括在绝缘层中形成沟槽; 以及在所述牺牲线的表面上形成介电层。 此外，该方法包括在电介质层上形成金属层以填充沟槽，覆盖牺牲线并暴露源牺牲层和漏牺牲层; 以及去除源牺牲层和漏极牺牲层。 此外，该方法还包括去除牺牲线以形成通道; 在所述金属层上形成隔离层; 以及在金属层两端的绝缘层上形成源区和漏区。

公开(公告)号：US09025353B2

公开(公告)日：2015-05-05

申请号：US13253877

申请日：2011-10-05

Applicant: Curtis A. Birnbach

Inventor： Curtis A. Birnbach

IPC: H02M5/22 ,  G05F1/10

CPC classification number: H01G4/35 ,  G05F1/10 ,  H01J5/02 ,  H01J7/16 ,  H01J19/24 ,  H01J19/42 ,  H01J19/54 ,  H01J19/70 ,  H01J19/82 ,  H01J21/10 ,  H02H3/08 ,  H02H9/02 ,  H02H9/08

Abstract: High voltage high current regulator circuit for regulating current is interposed between first and second terminals connected to an external circuit and comprises at least one main-current carrying cold-cathode field emission electron tube conducting current between the first and second terminals. First and second grid-control cold-cathode field emission electron tubes provide control signals for first and second grids of the at least one main-current carrying cold-cathode field emission electron tube for positive and negative excursions of voltage on the first and second terminals, respectively. The current regulator circuit may be accompanied by a voltage-clamping circuit that includes at least one cold-cathode field emission electron tube. At least two cold-cathode field emission electron tubes, configured to operate at high voltage and high current, are preferably contained within a single vacuum enclosure and are interconnected to provide a circuit function, so as to form a high voltage high current vacuum integrated circuit.

Abstract translation: 用于调节电流的高压大电流调节器电路被插入在连接到外部电路的第一和第二端子之间，并且包括在第一和第二端子之间传导电流的至少一个主电流负载冷阴极场致发射电子管。 第一和第二格栅控制冷阴极场发射电子管提供用于至少一个主电流负载冷阴极场发射电子管的第一和第二栅极的控制信号，用于在第一和第二端子上的正和负偏移电压 ， 分别。 电流调节器电路可以伴随着包括至少一个冷阴极场发射电子管的电压钳位电路。 配置为在高电压和高电流下操作的至少两个冷阴极场发射电子管优选地包含在单个真空外壳内并且互连以提供电路功能，以便形成高压大电流真空集成电路 。

公开(公告)号：US08115187B2

公开(公告)日：2012-02-14

申请号：US12124475

申请日：2008-05-21

Applicant: Brent M. Segal ,  Jonathan W. Ward ,  Thomas Rueckes

Inventor： Brent M. Segal ,  Jonathan W. Ward ,  Thomas Rueckes

IPC: H01L29/02

CPC classification number: H01J21/10 ,  H01J3/021 ,  H01J19/38 ,  H01J2203/0232 ,  Y10S977/742

Abstract: Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.

Abstract translation: 提供具有碳纳米管膜，层，带和织物的真空微电子器件。 本发明公开了包括三端（发射极，栅极和阳极）的三极管结构的微电子真空装置，以及诸如四极和五极管的高阶器件，所有这些都使用碳纳米管来形成 设备。 在某些实施例中，纳米管织物的图案化部分可以用作栅极/栅极部件，导电迹线等。纳米管织物可以悬挂或保形地设置。 在某些实施例中，使用用于加强纳米管织物层的方法。 公开了用于施加，选择性地去除（例如蚀刻）悬浮和加强垂直和水平布置的纳米管织物的各种方法，以及CMOS兼容的制造方法。 在某些实施例中，纳米管织物三极管提供可用于辐射密集型应用中的高速，小规模，低功率的器件。

公开(公告)号：US20100289577A1

公开(公告)日：2010-11-18

申请号：US12619407

申请日：2009-11-16

Applicant: Curtis A. Birnbach

Inventor： Curtis A. Birnbach

IPC: H03F3/02

CPC classification number: A23L3/263 ,  A61L2/0011 ,  A61L2/082 ,  A61L11/00 ,  B09C1/002 ,  B09C1/08 ,  C02F1/008 ,  C02F1/305 ,  C02F1/307 ,  C02F2201/008 ,  C02F2201/326 ,  C02F2303/04 ,  H01J21/10 ,  H01J35/065 ,  H01J35/08 ,  H01J35/16 ,  H01J2235/062 ,  H01J2235/068 ,  H01J2235/086 ,  H01J2235/087 ,  H05G1/22

Abstract: Disclosed is a cascade voltage amplifier for producing an amplified output in pulse or continuous wave form comprises at least one non-final stage with an electron tube configured as a switching and Class A or C amplifying structure. A final stage comprises an electron tube configured as a Class A or C amplifying structure. The at least one non-final stage and the final stage are connected in series, and the amplified output has a voltage of at least 1000 volts. Further disclosed is a method of activating a plurality of cascaded electron tube stages within a common vacuum enclosure. Beneficially, a sufficient amount of energy supplied to the first stage serially propagates through any intervening stage to the final stage so as to facilitate activation of all tube stages.

Abstract translation: 公开了用于产生脉冲或连续波形的放大输出的级联电压放大器，包括至少一个非最终级，其中电子管被配置为开关和A类或C类放大结构。 最后阶段包括配置为A类或C类放大结构的电子管。 至少一个非最终级和最后级串联连接，放大的输出具有至少1000伏特的电压。 进一步公开的是在公共真空外壳内激活多个级联的电子管级的方法。 有利地，提供给第一级的足够量的能量连续地通过任何中间阶段传播到最后阶段，以便促进所有管段的活化。

公开(公告)号：US20100072878A1

公开(公告)日：2010-03-25

申请号：US12521641

申请日：2006-12-29

Applicant: Francesca Brunetti ,  Aldo Di Carlo ,  Massimiliano Lucci ,  Silvia Orlanducci ,  Riccardo Riccitelli ,  Maria Letizia Terranova

Inventor： Francesca Brunetti ,  Aldo Di Carlo ,  Massimiliano Lucci ,  Silvia Orlanducci ,  Riccardo Riccitelli ,  Maria Letizia Terranova

IPC: H01J29/46 ,  H01J9/02

CPC classification number: H01J21/10 ,  H01J3/021

Abstract: Disclosed herein is a high frequency, cold cathode, triode-type, field-emitter vacuum tube including a cathode structure, an anode structure spaced from the cathode structure, and a control grid, wherein the cathode structure and the anode structure are formed separately and bonded together with the interposition of spacers, and the control grid is integrated in the anode structure.

Abstract translation: 本文公开了一种包括阴极结构，与阴极结构间隔开的阳极结构和控制栅格的高频，冷阴极，三极管型场致发射器真空管，其中阴极结构和阳极结构分开形成， 与间隔物的插入结合在一起，并且控制栅格集成在阳极结构中。

公开(公告)号：US20080258600A1

公开(公告)日：2008-10-23

申请号：US11690918

申请日：2007-04-17

Applicant: Robert Carl Murray ,  Karim Younsi ,  Fengfeng Tao ,  Seyed Gholamali Saddoughi

Inventor： Robert Carl Murray ,  Karim Younsi ,  Fengfeng Tao ,  Seyed Gholamali Saddoughi

IPC: H01J29/70

CPC classification number: H01J21/10

Abstract: A high-frequency, high-voltage electron switch includes an electron source, a steering mechanism, a mask or anode plate, and a target. The electron source produces a beam of electrons with a voltage of at least about 1 kV that impinges upon the anode plate. The steering mechanism scans the electron beam across the anode plate at a scanning frequency of at least about 10 MHz. A hole or aperture is provided in the anode plate that allows the electron beam to pass through and produce a pulsed, high-voltage current in the target with a very high-frequency repetition rate and a very fast rise time. The pulsed, high-voltage current produced in the target can be used to cause a high-voltage source to turn on and off.

Abstract translation: 高频，高压电子开关包括电子源，转向机构，掩模或阳极板以及靶。 电子源产生具有至少约1kV的电压撞击在阳极板上的电子束。 转向机构以至少约10MHz的扫描频率扫描横跨阳极板的电子束。 在阳极板中设置有孔或孔，允许电子束通过，并以非常高的频率重复率和非常快的上升时间在靶中产生脉冲的高电压电流。 目标中产生的脉冲高压电流可用于使高压源导通和关断。