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    Apparatus and method for pulsed plasma processing of a semiconductor substrate
    32.
    发明申请
    Apparatus and method for pulsed plasma processing of a semiconductor substrate 有权
    用于半导体衬底脉冲等离子体处理的装置和方法

    公开(公告)号：US20010023743A1

    公开(公告)日：2001-09-27

    申请号：US09860698

    申请日：2001-05-16

    Inventor： Stephen E. Savas

    IPC: C23F001/02

    CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32706 ,  H01J2237/004 ,  H01J2237/3345

    Abstract: Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple sufficient power into the plasma to produce a high density of ions (null1011cmnull3) for etching. Preferably, the low power cycles allow electrons to cool off to reduce the average random (thermal) electron velocity in the plasma. Preferably, the low power cycle is limited in duration as necessary to prevent excessive plasma loss to the walls or due to recombination of negative and positive ions. It is an advantage of these and other aspects of the present invention that average electron thermal velocity is reduced, so fewer electrons overcome the plasma sheath and accumulate on substrate or mask layer surfaces. A separate power source alternates between high and low power cycles to accelerate ions toward the substrate being etched. In one embodiment, a strong bias is applied to the substrate in short bursts. Preferably, multiple burst occur during the average transit time for an ion to cross the plasma sheath and reach the substrate surface. Ions are pulsed toward the surface for etching. These ions are not deflected into sidewalls as readily as ions in conventional low energy etch processes due to reduced charge buildup and the relatively low duty cycle of power used to pulse ions toward the substrate surface.

    Abstract translation: 用于改进蚀刻工艺的装置和方法。 电源在高功率和低功率周期之间交替产生和维持等离子体放电。 优选地，高功率循环将足够的功率耦合到等离子体中以产生用于蚀刻的高密度离子（> = 1011cm-3）。 优选地，低功率周期允许电子冷却以降低等离子体中的平均随机（热）电子速度。 优选地，低功率循环的持续时间受到限制，以防止对壁的过度等离子体损失或由于负离子和正离子的复合。 本发明的这些和其它方面的优点是平均电子热速度降低，因此较少的电子克服了等离子体鞘并积聚在衬底或掩模层表面上。 单独的电源在高功率和低功率循环之间交替，以将离子加速朝向被蚀刻的衬底。 在一个实施例中，以短脉冲串将强偏压施加到衬底。 优选地，在平均通过时间期间发生多次爆发，以使离子穿过等离子体护套并到达衬底表面。 离子脉冲朝表面进行蚀刻。 这些离子由于电荷累积减少和脉冲离子朝向衬底表面的相对低的功率占空比而不会像传统的低能量蚀刻工艺中的离子一样容易地偏转到侧壁中。

    Apparatus and method for pulsed plasma processing of a semiconductor substrate
    33.
    发明授权
    Apparatus and method for pulsed plasma processing of a semiconductor substrate 失效
    用于半导体衬底脉冲等离子体处理的装置和方法

    公开(公告)号：US06253704B1

    公开(公告)日：2001-07-03

    申请号：US09398553

    申请日：1999-09-17

    Applicant: Stephen E. Savas

    Inventor： Stephen E. Savas

    IPC: C23C1600

    CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32706 ,  H01J2237/004 ,  H01J2237/3345

    Abstract: Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple sufficient power into the plasma to produce a high density of ions (≳1011cm−3) for etching. Preferably, the low power cycles allow electrons to cool off to reduce the average random (thermal) electron velocity in the plasma. Preferably, the low power cycle is limited in duration as necessary to prevent excessive plasma loss to the walls or due to recombination of negative and positive ions. It is an advantage of these and other aspects of the present invention that average electron thermal velocity is reduced, so fewer electrons overcome the plasma sheath and accumulate on substrate or mask layer surfaces. A separate power source alternates between high and low power cycles to accelerate ions toward the substrate being etched. In one embodiment, a strong bias is applied to the substrate in short bursts. Preferably, multiple burst occur during the average transit time for an ion to cross the plasma sheath and reach the substrate surface. Ions are pulsed toward the surface for etching. These ions are not deflected into sidewalls as readily as ions in conventional low energy etch processes due to reduced charge buildup and the relatively low duty cycle of power used to pulse ions toward the substrate surface.

    Abstract translation: 用于改进蚀刻工艺的装置和方法。 电源在高功率和低功率周期之间交替产生和维持等离子体放电。 优选地，高功率循环将足够的功率耦合到等离子体中以产生用于蚀刻的高密度离子（>〜1011cm-3）。 优选地，低功率周期允许电子冷却以降低等离子体中的平均随机（热）电子速度。 优选地，低功率循环的持续时间受到限制，以防止对壁的过度等离子体损失或由于负离子和正离子的复合。 本发明的这些和其它方面的优点是平均电子热速度降低，因此较少的电子克服了等离子体鞘并积聚在衬底或掩模层表面上。 单独的电源在高功率和低功率循环之间交替，以将离子加速朝向被蚀刻的衬底。 在一个实施例中，以短脉冲串将强偏压施加到衬底。 优选地，在平均通过时间期间发生多次爆发，以使离子穿过等离子体护套并到达衬底表面。 离子脉冲朝表面进行蚀刻。 这些离子由于电荷累积减少和脉冲离子朝向衬底表面的相对低的功率占空比而不会像传统的低能量蚀刻工艺中的离子一样容易地偏转到侧壁中。

    Method for reducing ESD and imaging damage during focused ion beam definition of magnetoresistive head write track width
    34.
    发明授权
    Method for reducing ESD and imaging damage during focused ion beam definition of magnetoresistive head write track width 失效
    在磁阻头写入磁道宽度的聚焦离子束定义期间减少ESD和成像损伤的方法

    公开(公告)号：US6137660A

    公开(公告)日：2000-10-24

    申请号：US999293

    申请日：1997-12-29

    Applicant: Charles Partee ,  James R. Carter

    Inventor： Charles Partee ,  James R. Carter

    IPC: G11B5/31 ,  G11B5/39 ,  G11B5/40 ,  G11B5/127

    CPC classification number: G11B5/3903 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3967 ,  G11B5/314 ,  G11B5/40 ,  H01J2237/004 ,  H01J2237/3174

    Abstract: A magnetoresistive read/recording head for use in a fixed disk drive data storage device is formed by the steps of first, photolithographically depositing the head on one surface of a slider block, second, applying, a conductive film preferably of carbon or a silicon/carbon multi-layer film over the head and onto the block surface, and then milling the write tip portion of the head with a focused ion beam. The remaining conductive film is then removed in an oxygen plasma which chemically removes the remaining conductive film. The conductive layer is transparent to the focused ion beam and conducts electrostatic charge away from the head during the milling operation thus preventing electrostatic discharges from occurring which otherwise would damage the head.

    Abstract translation: 通过以下步骤形成用于固定盘驱动器数据存储装置的磁阻读取/记录头：首先将光头光刻淀积在滑动块的一个表面上，其次，施加优选碳或硅/ 碳多层膜在头部和块表面上，然后用聚焦离子束研磨头部的写入尖端部分。 然后在氧等离子体中除去剩余的导电膜，其中化学去除剩余的导电膜。 导电层对聚焦离子束是透明的，并且在研磨操作期间将静电电荷从头部传导出去，从而防止静电放电，否则会损坏头部。

    Scanning electron beam microscope
    35.
    发明授权
    Scanning electron beam microscope 有权
    扫描电子束显微镜

    公开(公告)号：US6066849A

    公开(公告)日：2000-05-23

    申请号：US149767

    申请日：1998-09-08

    Applicant: Douglas K. Masnaghetti ,  Stefano E. Concina ,  Stanley S. Sun ,  Waiman Ng ,  David L. Adler

    Inventor： Douglas K. Masnaghetti ,  Stefano E. Concina ,  Stanley S. Sun ,  Waiman Ng ,  David L. Adler

    IPC: H01L21/66 ,  H01J37/20 ,  H01J37/22 ,  H01J37/248 ,  H01J37/28 ,  H01J37/244

    CPC classification number: H01J37/28 ,  H01J2237/004 ,  H01J2237/2817

    Abstract: A method and apparatus for generating an image of a specimen with a scanning electron microscope (SEM) is disclosed. The SEM has a source unit for directing an electron beam substantially towards a portion of the specimen, a detector for detecting particles that are emitted from the specimen, and an image generator for generating the image of the specimen from the emitted particles. The image features are controlled by conditions under which the image is generated. The specimen is scanned under a first set of conditions to generate a first image during a first image phase. The specimen is then scanned under a second set of conditions during a setup phase. The second set of conditions are selected to control charge on the specimen. The specimen is then scanned under the first set of conditions to generate a second image during a second image phase. The features of the second image are controlled by the first and second sets of conditions.

    Abstract translation: 公开了一种用扫描电子显微镜（SEM）产生样本图像的方法和装置。 SEM具有用于将电子束基本上朝向样本的一部分引导的源单元，用于检测从样本发射的颗粒的检测器，以及用于从所发射的颗粒产生样本的图像的图像发生器。 图像特征由生成图像的条件控制。 在第一组条件下扫描样本以在第一图像阶段期间产生第一图像。 然后在设置阶段，在第二组条件下扫描样品。 选择第二组条件来控制样品上的电荷。 然后在第一组条件下扫描样品，以在第二图像阶段期间产生第二图像。 第二图像的特征由第一和第二组条件控制。

    Apparatus and method for pulsed plasma processing of a semiconductor substrate
    36.
    发明授权
    Apparatus and method for pulsed plasma processing of a semiconductor substrate 失效
    用于半导体衬底脉冲等离子体处理的装置和方法

    公开(公告)号：US5983828A

    公开(公告)日：1999-11-16

    申请号：US727209

    申请日：1996-10-08

    Applicant: Stephen E. Savas

    Inventor： Stephen E. Savas

    IPC: H01J37/32 ,  C23C16/00

    CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32706 ,  H01J2237/004 ,  H01J2237/3345

    Abstract: Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple sufficient power into the plasma to produce a high density of ions (>10.sup.11 cm.sup.-3) for etching. Preferably, the low power cycles allow electrons to cool off to reduce the average random (thermal) electron velocity in the plasma. Preferably, the low power cycle is limited in duration as necessary to prevent excessive plasma loss to the walls or due to recombination of negative and positive ions. It is an advantage of these and other aspects of the present invention that average electron thermal velocity is reduced, so fewer electrons overcome the plasma sheath and accumulate on substrate or mask layer surfaces. A separate power source alternates between high and low power cycles to accelerate ions toward the substrate being etched. In one embodiment, a strong bias is applied to the substrate in short bursts. Preferably, multiple burst occur during the average transit time for an ion to cross the plasma sheath and reach the substrate surface. Ions are pulsed toward the surface for etching. These ions are not deflected into sidewalls as readily as ions in conventional low energy etch processes due to reduced charge buildup and the relatively low duty cycle of power used to pulse ions toward the substrate surface.

    Abstract translation: 用于改进蚀刻工艺的装置和方法。 电源在高功率和低功率周期之间交替产生和维持等离子体放电。 优选地，高功率循环将足够的功率耦合到等离子体中以产生用于蚀刻的高密度离子（+ E，ut1 + EE1011cm-3）。 优选地，低功率周期允许电子冷却以降低等离子体中的平均随机（热）电子速度。 优选地，低功率循环的持续时间受到限制，以防止对壁的过度等离子体损失或由于负离子和正离子的复合。 本发明的这些和其它方面的优点是平均电子热速度降低，因此较少的电子克服了等离子体鞘并积聚在衬底或掩模层表面上。 单独的电源在高功率和低功率循环之间交替，以将离子加速朝向被蚀刻的衬底。 在一个实施例中，以短脉冲串将强偏压施加到衬底。 优选地，在平均通过时间期间发生多次爆发，以使离子穿过等离子体护套并到达衬底表面。 离子脉冲朝表面进行蚀刻。 这些离子由于电荷累积减少和脉冲离子朝向衬底表面的相对低的功率占空比而不会像传统的低能量蚀刻工艺中的离子一样容易地偏转到侧壁中。

    Electron beam exposure system having an electrostatic deflector wherein an electrostatic charge-up is eliminated
    37.
    发明授权
    Electron beam exposure system having an electrostatic deflector wherein an electrostatic charge-up is eliminated 失效
    具有静电偏转器的电子束曝光系统，其中消除了静电充电

    公开(公告)号：US5245194A

    公开(公告)日：1993-09-14

    申请号：US872194

    申请日：1992-04-22

    Applicant: Yoshihisa Oae ,  Hiroshi Yasuda

    Inventor： Yoshihisa Oae ,  Hiroshi Yasuda

    IPC: G03F7/20 ,  G21K5/04 ,  H01J37/147 ,  H01J37/305 ,  H01L21/30

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1477 ,  H01J2237/004 ,  H01J2237/31776

    Abstract: An electron beam exposure system comprises an electron beam source for producing an electron beam, an electron lens system for focusing the electron beam on an object, and an electrostatic deflector supplied with a control signal for deflecting the electron beam in response to the control signal, wherein the electrostatic deflector comprises a sleeve extending in an axial direction and having an outer surface and a corresponding inner surface. A plurality of electrodes are provided on the outer surface of the sleeve with a separation from each other in a circumferential direction. The sleeve has a finite conductivity such that an electric current flows along the sleeve in the circumferential direction when a control voltage is applied across the plurality of electrodes.

    Abstract translation: 电子束曝光系统包括用于产生电子束的电子束源，用于将电子束聚焦在物体上的电子透镜系统和提供有用于响应于控制信号偏转电子束的控制信号的静电偏转器， 其中所述静电偏转器包括在轴向方向上延伸并具有外表面和相应的内表面的套筒。 多个电极设置在套筒的外表面上，在圆周方向上彼此分离。 套管具有有限的导电性，使得当跨越多个电极施加控制电压时，电流沿圆周方向流过套管。

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