公开(公告)号：US20150130353A1

公开(公告)日：2015-05-14

申请号：US14578575

申请日：2014-12-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Tsung LIN ,  Hsiao-Yin HSIEH ,  Chi-Hao HUANG ,  Hong-Shing CHOU ,  Yeh-Chieh WANG

IPC: H01J37/08 ,  H01J37/244 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/0203 ,  H01J2237/024 ,  H01J2237/026 ,  H01J2237/08 ,  H01J2237/303 ,  H01J2237/30405

Abstract: An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.

Abstract translation: 一种用于延长离子源的使用寿命的装置，包括电弧室，其包含要顺序使用的多个阴极，以及多个防水剂，以在不使用时保护阴极。 电弧室包括限定反应腔的电弧室壳体，气体注入开口，多个阴极和至少一个排斥元件。 用于延长离子源的使用寿命的方法包括向离子源中的电弧室的第一阴极提供电力，操作第一阴极，检测第一阴极的故障或性能下降，激励第二阴极，以及 与第二阴极连续操作电弧室。

公开(公告)号：US20150008213A1

公开(公告)日：2015-01-08

申请号：US14325146

申请日：2014-07-07

Applicant: FEI Company

Inventor： Thomas G. Miller ,  Shouyin Zhang

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/08 ,  H01J37/321 ,  H01J37/32504 ,  H01J2237/0206 ,  H01J2237/026 ,  H01J2237/31749

Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.

Abstract translation: 用于聚焦带电粒子束系统的电感耦合等离子体源包括在等离子体室内的导电屏蔽，以便减少与等离子体的电容耦合。 通过偏置电极或等离子体将内部导电屏蔽层保持在与等离子体源大致相同的电位。 内部屏蔽允许在等离子体室的外部使用更多种类的冷却方法。

公开(公告)号：US20120280136A1

公开(公告)日：2012-11-08

申请号：US13353032

申请日：2012-01-18

Applicant: Shouyin Zhang ,  Noel Smith ,  Walter Skoczylas

Inventor： Shouyin Zhang ,  Noel Smith ,  Walter Skoczylas

IPC: H01J3/14

CPC classification number: H01J37/08 ,  H01J27/16 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/026 ,  H01J2237/038 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a dielectric liquid that insulates and cools the plasma chamber. A flow restrictor at an electrical potential that is a large fraction of the plasma potential reducing arcing because the voltage drop in the gas occurs primarily at relative high pressure.

Abstract translation: 用于聚焦带电粒子束系统的电感耦合等离子体源包括绝缘和冷却等离子体室的电介质液体。 由于气体中的电压降主要发生在相对较高的压力下，电流下的流量限制器是等离子体电位降低电弧的大部分。

公开(公告)号：US20120085937A1

公开(公告)日：2012-04-12

申请号：US13082364

申请日：2011-04-07

Applicant: Steven Thomas Coyle ,  John Andrew Hunt

Inventor： Steven Thomas Coyle ,  John Andrew Hunt

IPC: G21K5/00

CPC classification number: G21F3/00 ,  G01N1/32 ,  H01J37/31 ,  H01J2237/026 ,  H01J2237/2007 ,  H01J2237/3118

Abstract: Disclosed are embodiments of an ion beam sample preparation thermal management apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. A heat sink means is configured to conduct heat away from the sample undergoing sample preparation in the ion beam. The ion beam irradiating means may modulate ion beam intensity between at least two intensities. The shield retention stage may be stationary or rotating.

Abstract translation: 公开了用于使用这些实施例的离子束样品制备热管理装置和方法的实施方案。 该装置包括在真空室中的离子束照射装置，其可以将离子定向到样品，阻挡部分朝向样品的离子的屏蔽件，以及具有屏蔽保持装置的屏蔽保持台，该屏蔽保持装置可替换地和可移除地将屏蔽保持在 一个位置。 当屏蔽保持在屏蔽保持阶段时，屏蔽具有与屏蔽保持平台上的辅助基准特征相交的基准特征。 屏蔽件具有能够将样品耐久地粘附到屏蔽件的特征，以用离子束处理样品。 屏蔽和屏蔽保持阶段的补充基准特征使得样品能够准确和可重复地定位在用于样品处理和再处理的设备中。 散热装置被配置为将热量从在离子束中进行样品制备的样品导出。 离子束照射装置可以在至少两个强度之间调制离子束强度。 屏蔽保持阶段可以是静止的或旋转的。

公开(公告)号：US07718045B2

公开(公告)日：2010-05-18

申请号：US11426775

申请日：2006-06-27

Applicant: Jennifer W. Tiller ,  Anantha Subramani ,  Michael S. Cox ,  Keith A. Miller

Inventor： Jennifer W. Tiller ,  Anantha Subramani ,  Michael S. Cox ,  Keith A. Miller

IPC: C23C14/34

CPC classification number: H01J37/3405 ,  H01J37/32623 ,  H01J2237/0206 ,  H01J2237/026

Abstract: The invention generally provides a ground shield for use in a physical vapor deposition (PVD) chamber. In one embodiment, a ground shield includes a generally cylindrical body comprising an outer wall, an inner upper wall, an inner lower wall having a diameter less than a diameter of the inner upper wall and a reentrant feature coupling the upper and inner lower walls. The reentrant feature advantageously prevents arching between the shield and target, which promotes greater process uniformity and repeatability along with longer chamber component service life.

Abstract translation: 本发明通常提供用于物理气相沉积（PVD）室的接地屏蔽。 在一个实施例中，接地屏蔽包括大致圆柱形的主体，其包括外壁，内上壁，直​​径小于内上壁的直径的内下壁和连接上下壁的可重入特征。 可折入特征有利于防止护罩和靶之间的拱形，这促进了更大的工艺均匀性和重复性以及更长的腔室部件使用寿命。

公开(公告)号：US07675046B2

公开(公告)日：2010-03-09

申请号：US11527842

申请日：2006-09-27

Applicant: Kasegn D. Tekletsadik ,  Russell J. Low

Inventor： Kasegn D. Tekletsadik ,  Russell J. Low

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J37/16 ,  H01J2237/0206 ,  H01J2237/026 ,  H01J2237/038 ,  H01J2237/08

Abstract: An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor. An ion implanter is also provided. The ion implanter includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulated conductor. The insulated conductor is disposed proximate an exterior portion of the terminal structure to modify an electric field about the terminal structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kV/inch disposed about a conductor.

Abstract translation: 一种装置包括导电结构和布置在导电结构的外部附近的绝缘导体，以修改围绕导电结构的电场。 绝缘导体具有介于绝缘体上的介电强度大于75千伏（kV）/英寸的导体周围。 还提供了离子注入机。 离子注入机包括被配置为提供离子束的离子源，限定空腔的端子结构，至少部分地设置在空腔内的离子源和绝缘导体。 绝缘导体设置在端子结构的外部附近以修改围绕端子结构的电场。 绝缘导体具有介于绝缘体上的介电强度大于75kV /英寸的导体周围。

公开(公告)号：US07579604B2

公开(公告)日：2009-08-25

申请号：US11445722

申请日：2006-06-02

Applicant: John W. Vanderpot ,  Yongzhang Huang

Inventor： John W. Vanderpot ,  Yongzhang Huang

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

Abstract translation: 提供了用于减轻与离子注入相关的污染的系统，方法和装置。 提供了一种位于离子源和终端之间的离子源，终端站和质量分析器，其中离子源由离子源形成，并且基于位置，选择性地通过质量分析器传送到终端站 光束挡块组件。 光束停止组件选择性地防止离子束进入和/或离开质量分析器，其中最小化在诸如离子注入系统的启动的过渡期间与不稳定离子源相关联的污染。

公开(公告)号：US20090075121A1

公开(公告)日：2009-03-19

申请号：US12205885

申请日：2008-09-07

Applicant: Naruhisa NAGATA

Inventor： Naruhisa NAGATA

IPC: G11B5/72 ,  C23C16/513

CPC classification number: G11B5/8408 ,  C23C16/26 ,  C23C16/45591 ,  C23C16/513 ,  H01J37/09 ,  H01J37/32431 ,  H01J2237/026 ,  H01J2237/3321

Abstract: An apparatus and method for forming a carbon protective layer on a substrate using a plasma CVD method allows a more uniform in-plane distribution of the carbon protective layer thickness. The apparatus includes an annular anode that generates a plasma beam and a disk-shaped shield disposed between the anode and the substrate. The anode, the shield, and the substrate are concentrically arranged so that a straight line connecting the centers of the anode and the substrate is perpendicular to the deposition surface of the substrate where the carbon protective layer is to be formed. The center of the shield is also on the straight line.

Abstract translation: 使用等离子体CVD法在基板上形成碳保护层的装置和方法允许碳保护层厚度的更均匀的面内分布。 该装置包括产生等离子体束的环形阳极和设置在阳极和衬底之间的盘形屏蔽。 阳极，屏蔽体和基板同心配置，使得连接阳极和基板的中心的直线垂直于要形成碳保护层的基板的沉积表面。 盾牌的中心也在直线上。

公开(公告)号：US20070295602A1

公开(公告)日：2007-12-27

申请号：US11426775

申请日：2006-06-27

Applicant: Jennifer W. Tiller ,  Anantha Subramani ,  Michael S. Cox ,  Keith A. Miller

Inventor： Jennifer W. Tiller ,  Anantha Subramani ,  Michael S. Cox ,  Keith A. Miller

IPC: C23C14/00

CPC classification number: H01J37/3405 ,  H01J37/32623 ,  H01J2237/0206 ,  H01J2237/026

Abstract: The invention generally provides a ground shield for use in a physical vapor deposition (PVD) chamber. In one embodiment, a ground shield includes a generally cylindrical body comprising an outer wall, an inner upper wall, an inner lower wall having a diameter less than a diameter of the inner upper wall and a reentrant feature coupling the upper and inner lower walls. The reentrant feature advantageously prevents arching between the shield and target, which promotes greater process uniformity and repeatability along with longer chamber component service life.

Abstract translation: 本发明通常提供用于物理气相沉积（PVD）室的接地屏蔽。 在一个实施例中，接地屏蔽包括大致圆柱形的主体，其包括外壁，内上壁，直​​径小于内上壁的直径的内下壁和连接上下壁的可重入特征。 可折入特征有利于防止护罩和靶之间的拱形，这促进了更大的工艺均匀性和重复性以及更长的腔室部件使用寿命。

公开(公告)号：US07232997B2

公开(公告)日：2007-06-19

申请号：US11106368

申请日：2005-04-14

Applicant: Klaus Edinger ,  Josef Sellmair ,  Thorsten Hofmann

Inventor： Klaus Edinger ,  Josef Sellmair ,  Thorsten Hofmann

IPC: G01N23/00

CPC classification number: H01J37/026 ,  G01N23/2273 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/0044 ,  H01J2237/026

Abstract: An apparatus for investigating and/or modifying a sample with charged particles, in particular a scanning electron microscope, is provided. The apparatus comprises a beam (1, 2) of charged particles, a shielding element (10) having an opening (30) for the beam of charged particles to pass through, wherein the opening (30) is sufficiently small and the shielding element (10) sufficiently closely positioned to the surface (20) of the sample to reduce the influence of charge accumulation effects at the surface on the beam of charged particles.

Abstract translation: 提供了一种用于研究和/或修饰具有带电粒子的样品的装置，特别是扫描电子显微镜。 该设备包括带电粒子的束（1,2），具有用于带电粒子束通过的开口（30）的屏蔽元件（10），其中开口（30）足够小并且屏蔽元件 10）足够紧密地定位于样品的表面（20），以减少带电粒子束上的表面处的电荷累积效应的影响。