中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

81 records (took 0.022 seconds)

    Magnetic domain imaging system
    31.
    发明授权
    Magnetic domain imaging system 有权
    磁畴成像系统

    公开(公告)号：US08158940B2

    公开(公告)日：2012-04-17

    申请号：US12781121

    申请日：2010-05-17

    Applicant: Takeshi Tomita

    Inventor： Takeshi Tomita

    IPC: H01J37/26 ,  H01J37/147 ,  H01J3/14

    CPC classification number: H01J37/266 ,  H01J37/147 ,  H01J2237/1405 ,  H01J2237/2008 ,  H01J2237/2588

    Abstract: A magnetic domain imaging system is offered which permits application of a strong magnetic field to a specimen. The imaging system includes a transmission electron microscope having an objective lens. The specimen that is magnetic in nature is placed in the upper polepiece of the objective lens. An electron beam transmitted through the specimen is imaged and displayed on a display device. A field application coil assembly for applying a magnetic field to the specimen and two deflection coil assemblies for bringing the beam deflected by the field applied to the specimen back to the optical axis are mounted in the upper polepiece.

    Abstract translation: 提供了磁场成像系统，其允许对样本施加强磁场。 成像系统包括具有物镜的透射电子显微镜。 本质上是磁性的样品被放置在物镜的上极片中。 通过试样透射的电子束被成像并显示在显示装置上。 用于向样本施加磁场的场应用线圈组件和用于将由施加到样本的磁场偏转的光束引导到光轴的两个偏转线圈组件安装在上极靴中。

    Multi beam charged particle device
    33.
    发明授权
    Multi beam charged particle device 有权
    多光束带电粒子装置

    公开(公告)号：US06943349B2

    公开(公告)日：2005-09-13

    申请号：US10258869

    申请日：2001-04-27

    Applicant: Pavel Adamec ,  Ralf Degenhardt ,  Hans-Peter Feuerbaum ,  Harry Munack ,  Dieter Winkler

    Inventor： Pavel Adamec ,  Ralf Degenhardt ,  Hans-Peter Feuerbaum ,  Harry Munack ,  Dieter Winkler

    IPC: G01Q30/02 ,  H01J37/04 ,  H01J37/09 ,  H01J37/26 ,  G21K1/08 ,  G01N23/00 ,  H01J3/14 ,  H01J37/28

    CPC classification number: H01J37/04 ,  H01J37/09 ,  H01J37/266

    Abstract: The present invention provides an improved column for a charged particle beam device. The column comprises an aperture plate having multiple apertures to produce multiple beams of charged particles and a deflector to influence the beams of charged particles so that each beam appears to come from a different source. Furthermore, an objective lens is used in order to focus the charged-particle beams onto the specimen. Due to the deflector, multiple images of the source are created on the surface of the specimen whereby all the images can be used for parallel data acquisition. Accordingly, the speed of data acquisition is increased. With regard to the focusing properties of the objective lens, the beams of charged particles can basically be treated as independent particle beams which do not negatively affect each other. Accordingly, each beam basically provides the same resolution as the beam of a conventional charged particle beam device.

    Abstract translation: 本发明提供了一种用于带电粒子束装置的改进的柱。 柱包括具有多个孔的孔板，以产生多个带电粒子束和偏转器，以影响带电粒子束，使得每个束似乎来自不同的源。 此外，使用物镜以将带电粒子束聚焦到样本上。 由于偏转器，在样品的表面上产生了源的多个图像，从而所有图像可以用于并行数据采集。 因此，数据采集的速度增加。 关于物镜的聚焦特性，带电粒子束基本上可以被视为不会相互影响的独立的粒子束。 因此，每个光束基本上提供与常规带电粒子束装置的光束相同的分辨率。

    Method of determining degree of charge-up induced by plasma used for manufacturing semiconductor device and apparatus therefor
    34.
    发明申请
    Method of determining degree of charge-up induced by plasma used for manufacturing semiconductor device and apparatus therefor 失效
    确定用于制造半导体器件的等离子体引起的充电程度的方法及其装置

    公开(公告)号：US20040061052A1

    公开(公告)日：2004-04-01

    申请号：US10673581

    申请日：2003-09-30

    Inventor： Ji-Soo Kim ,  Wan-Jae Park ,  Kyoung-Sub Shin

    IPC: G01N023/00 ,  G21K007/00 ,  G01R031/305

    CPC classification number: H01J37/32935 ,  H01J37/266 ,  H01J2237/004 ,  H01J2237/2594

    Abstract: In a method for determining the degree of charge-up induced by plasma used for manufacturing a semiconductor device and an apparatus therefor, a predetermined region on a surface of a wafer on which a plasma process has been performed is repeatedly scanned with a primary electron beam. Secondary electrons generated by a reaction between the primary electron beam and the surface of the wafer that are emitted to the outside of the surface of the wafer are collected. The degree of charge-up induced at the surface of the wafer by the plasma used during the plasma process is determined from the change in the amount of collected secondary electrons. Determination as to whether a contact hole is opened or as to the degree of degradation of a gate insulating layer is made based on the degree of charge-up.

    Abstract translation: 在用于确定用于制造半导体器件的等离子体引起的充电程度的方法及其装置中，在其上进行了等离子体处理的晶片的表面上的预定区域被一次电子束 。 收集由一次电子束和晶片表面之间的反应产生的二次电子，这些二次电子被发射到晶片表面的外部。 由等离子体工艺中使用的等离子体在晶片表面引起的充电程度由收集的二次电子量的变化确定。 基于充电的程度来确定接触孔是打开还是关于栅极绝缘层的劣化程度。

    Method and apparatus for detecting magnetism by means of electron spin polarization measurements through dielectronic transition
    36.
    发明授权
    Method and apparatus for detecting magnetism by means of electron spin polarization measurements through dielectronic transition 失效
    通过电子转移的电子自旋极化测量来检测磁性的方法和装置

    公开(公告)号：US4455486A

    公开(公告)日：1984-06-19

    申请号：US292203

    申请日：1981-08-12

    Applicant: Carl Rau

    Inventor： Carl Rau

    IPC: G01N23/201 ,  H01J37/26 ,  G01N23/00

    CPC classification number: G01N23/201 ,  H01J37/266

    Abstract: A beam of particles which undergoes a known charge state change in response to an exchange of two electrons having preoriented moments is generated. The beam is focused on a body, the magnetic properties of which are to be determined, in such a manner that the beam is reflected from the surface of the body. The number of particle charge state changes which occurred are measured in the reflected beam and provide an indication of the square of the magnetic value of the body and shows the magnetic state of the surface of the body.

    Abstract translation: 产生经历已知电荷状态的响应于具有预取向力矩的两个电子的交换的粒子束。 光束被聚焦在要被确定的磁性质的主体上，使得光束从身体的表面反射。 在反射光束中测量发生的粒子电荷状态变化的数量，并提供身体的磁性值的平方的指示，并显示身体的表面的磁状态。

    Apparatus and method for contact-free potential measurements of an electronic composition
    37.
    发明授权
    Apparatus and method for contact-free potential measurements of an electronic composition 失效
    电子组合物的无接触电势测量的装置和方法

    公开(公告)号：US4277679A

    公开(公告)日：1981-07-07

    申请号：US105892

    申请日：1979-12-21

    Applicant: Hans P. Feuerbaum

    Inventor： Hans P. Feuerbaum

    IPC: H01J37/28 ,  G01R31/26 ,  G01R31/302 ,  G01R31/305 ,  H01J37/26 ,  H01J49/48 ,  H01L21/66 ,  G01N23/00

    CPC classification number: H01J49/488 ,  G01R31/305 ,  H01J37/266

    Abstract: A method and apparatus for the contact-free potential measurement at an electronic component using an electron beam wherein a predetermined potential is applied to the measuring point and the output voltage of a controlled gain amplifier is set to a predetermined reference value U.sub.S by means of controlling a photomultiplier voltage U.sub.PM and the photomultiplier voltage U.sub.PM is maintained constant. The measuring voltage U.sub.M is then determined from the difference of the voltages U.sub.R -U.sub.S between the control unit output voltage U.sub.R and the index value voltage U.sub.S. The method and apparatus allow the quantitative potential measurement to be made on the conducting paths of an integrated circuit without utilizing manual adjustments.

    Abstract translation: 使用电子束的电子部件的无接触电位测定方法和装置，其中通过控制将控制增益放大器的预定电位施加到测量点并将受控增益放大器的输出电压设置为预定的参考值US 光电倍增管电压UPM和光电倍增管电压UPM保持不变。 然后根据控制单元输出电压UR和指标值电压US之间的电压UR-US的差确定测量电压UM。 该方法和装置允许在集成电路的导电路径上进行定量电位测量，而不用手动调整。

    Mobile ion film memory
    38.
    发明授权
    Mobile ion film memory 失效

    公开(公告)号：US3995190A

    公开(公告)日：1976-11-30

    申请号：US643399

    申请日：1975-12-22

    Applicant: Francis John Salgo

    Inventor： Francis John Salgo

    IPC: G11C11/23 ,  G11C13/04 ,  H01J29/00 ,  H01J31/58 ,  H01J37/26 ,  H01J29/36

    CPC classification number: H01J31/58 ,  G11C11/23 ,  G11C13/048 ,  H01J29/00 ,  H01J37/266 ,  Y10T428/31801

    Abstract: A memory device and method is disclosed wherein positions of ions associated with a film are varied locally with respect to the film's surface by an electric field. A writing and erasing field is created by voltage modulating the film's conducting substrate in syncronization with low intensity electron bombardment of a local area of the film's surface by a scanning electron beam.The ion's position in the film varies the film's surface potential and alters the angular distribution imparted by its surface to primary diffracted and secondary emitted electrons. In the invention's read mode a scanning electron beam, combined with a detector discriminator, analyzes these emitted electrons to determine the surface potential at each address on the film thus reading out data stored in the film. A second means of reading out stored information utilizing detection of low energy electrons selectively diffracted by ions near the film's surface is disclosed.

Patent Agency Ranking