公开(公告)号：US10774423B2

公开(公告)日：2020-09-15

申请号：US14552273

申请日：2014-11-24

Applicant: Applied Materials, Inc.

Inventor： Karthik Janakiraman ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Mark A. Fodor ,  Dale R. Du Bois ,  Amit Bansal ,  Mohamad Ayoub ,  Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  C23C16/503 ,  C23C16/505 ,  H01J37/32 ,  C23C16/509

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

公开(公告)号：US10410869B2

公开(公告)日：2019-09-10

申请号：US15633366

申请日：2017-06-26

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Kelvin Chan ,  Hien Minh Le ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Karthik Janakiraman

IPC: C23C16/06 ,  H01L21/3205 ,  C23C16/505 ,  H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  C23C16/02 ,  C23C16/40 ,  C23C28/00 ,  H01L27/11582

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US10056279B2

公开(公告)日：2018-08-21

申请号：US15004406

申请日：2016-01-22

Applicant: Applied Materials, Inc.

Inventor： Karthik Janakiraman ,  Hari K. Ponnekanti ,  Juan Carlos Rocha ,  Mukund Srinivasan

IPC: H01L21/677

CPC classification number: H01L21/67709 ,  H01L21/67736 ,  H01L21/67742

Abstract: A system for processing a substrate is provided including a first planar motor, a substrate carrier, a first processing chamber, and a first lift. The first planar motor includes a first arrangement of coils disposed along a first horizontal direction, a top surface parallel to the first horizontal direction, a first side, a second side. The substrate carrier has a substrate supporting surface parallel to the first horizontal direction. The first processing chamber has an opening to receive a substrate disposed on the substrate carrier. The first lift includes a second planar motor having a second arrangement of coils disposed along the first horizontal direction. A top surface top surface of the second planar motor is parallel to the first horizontal direction. The first lift is configured to move the top surface of the second planar motor between a first vertical location and a second vertical location.

公开(公告)号：US20170114453A1

公开(公告)日：2017-04-27

申请号：US15297257

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Rui Cheng ,  Pramit Manna ,  Kelvin Chan ,  Karthik Janakiraman ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: C23C16/24 ,  C23C16/455

CPC classification number: C23C16/24 ,  C23C16/04 ,  C23C16/045 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/4584

Abstract: Methods for depositing film comprising cyclical exposure of a substrate surface to a precursor and a degas environment to remove gas evolved from the film. Some embodiments further comprise the incorporation poisoning the top of a feature to inhibit film growth at the top of the feature. Some embodiments further comprising etching a portion of the film deposited at the top of a feature between cycles to increase gap-fill uniformity.

公开(公告)号：US12062567B2

公开(公告)日：2024-08-13

申请号：US16844764

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Rui Cheng ,  Diwakar Kedlaya ,  Satish Radhakrishnan ,  Anton V. Baryshnikov ,  Venkatanarayana Shankaramurthy ,  Karthik Janakiraman ,  Paul L. Brillhart ,  Badri N. Ramamurthi

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6838 ,  H01J37/32724 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/67253 ,  H01J2237/186 ,  H01J2237/24585

Abstract: Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.

公开(公告)号：US11961739B2

公开(公告)日：2024-04-16

申请号：US17063339

申请日：2020-10-05

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

CPC classification number: H01L21/0337 ,  C23C16/38 ,  H01L21/0332

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

公开(公告)号：US11830706B2

公开(公告)日：2023-11-28

申请号：US16703140

申请日：2019-12-04

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Jian Li ,  Satish Radhakrishnan ,  Rui Cheng ,  Diwakar N. Kedlaya ,  Juan Carlos Rocha-Alvarez ,  Umesh M. Kelkar ,  Karthik Janakiraman ,  Sarah Michelle Bobek ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Byung Seok Kwon

IPC: H01L21/67 ,  H05B3/10 ,  H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/46 ,  H05B3/14

CPC classification number: H01J37/32724 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  H01J37/32715 ,  H01L21/67103 ,  H05B3/10 ,  H05B3/143 ,  H01J2237/2007 ,  H01J2237/3321

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

公开(公告)号：US11798820B2

公开(公告)日：2023-10-24

申请号：US17094969

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Diwakar Kedlaya ,  Fang Ruan ,  Zubin Huang ,  Ganesh Balasubramanian ,  Kaushik Alayavalli ,  Martin Seamons ,  Kwangduk Lee ,  Rajaram Narayanan ,  Karthik Janakiraman

IPC: H01L21/67 ,  G01N21/3504 ,  G01N21/25 ,  C23C16/52

CPC classification number: H01L21/67069 ,  C23C16/52 ,  G01N21/255 ,  G01N21/3504 ,  H01L21/67253

Abstract: A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.

公开(公告)号：US20230309300A1

公开(公告)日：2023-09-28

申请号：US17705135

申请日：2022-03-25

Applicant: Applied Materials, Inc.

Inventor： Dimitrios Pavlopoulos ,  Rui Cheng ,  Qinghua Zhao ,  Karthik Janakiraman

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/02

CPC classification number: H01L27/11582 ,  H01L27/1157 ,  H01L21/02208

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. Alternating layers of material may be formed on the substrate. One or more recesses may be formed in the alternating layers of material. The methods may include forming a first silicon-containing material. The first silicon-containing material may extend into the one or more recesses formed in the alternating layers of material. The methods may include providing a halogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming a silicon-and-halogen-containing material. The silicon-and-halogen-containing material may overly the first silicon-containing material. The methods may include forming a second silicon-containing material. The second silicon-containing material may overly the silicon-and-halogen-containing material.

公开(公告)号：US11699577B2

公开(公告)日：2023-07-11

申请号：US17330061

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle Bobek ,  Ruiyun Huang ,  Abdul Aziz Khaja ,  Amit Bansal ,  Dong Hyung Lee ,  Ganesh Balasubramanian ,  Tuan Anh Nguyen ,  Sungwon Ha ,  Anjana M. Patel ,  Ratsamee Limdulpaiboon ,  Karthik Janakiraman ,  Kwangduk Douglas Lee

IPC: H01J37/32 ,  B08B7/00 ,  C23C14/56

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C14/564 ,  H01J37/32449 ,  H01J37/32504 ,  H01J2237/335

Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.