公开(公告)号：US11017997B2

公开(公告)日：2021-05-25

申请号：US16477671

申请日：2018-01-11

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Maribel Maldonado-Garcia

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  H01L21/687

Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

公开(公告)号：US20210043448A1

公开(公告)日：2021-02-11

申请号：US17081256

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mihaela A. Balseanu ,  Li-Qun Xia ,  Dongqing Yang ,  Lala Zhu ,  Malcolm J. Bevan ,  Theresa Kramer Guarini ,  Wenbo Yan

IPC: H01L21/02 ,  H01L21/3105 ,  C23C16/458 ,  C23C16/455 ,  C23C16/04 ,  C23C16/02 ,  C23C16/56

Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.

公开(公告)号：US20200332415A1

公开(公告)日：2020-10-22

申请号：US16637170

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Zhelin Sun ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Yijun Liu ,  Lin Yang

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/02

Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.

公开(公告)号：US20200312653A1

公开(公告)日：2020-10-01

申请号：US16753534

申请日：2018-10-05

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela Balseanu ,  Ning Li

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/04 ,  C23C16/455

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

公开(公告)号：US20200235104A1

公开(公告)日：2020-07-23

申请号：US16839392

申请日：2020-04-03

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Jianxin Lei ,  Wenting Hou ,  Mihaela Balseanu ,  Ning Li ,  Sanjay Natarajan ,  Gill Yong Lee ,  In Seok Hwang ,  Nobuyuki Sasaki ,  Sung-Kwan Kang

IPC: H01L27/108 ,  H01L21/3213 ,  H01L21/033

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.

公开(公告)号：US20160322214A1

公开(公告)日：2016-11-03

申请号：US15142514

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

Abstract translation: 用于形成SiCN，SiCO和SiCON膜的方法包括将衬底表面循环暴露于含硅气体，含碳气体和等离子体。 一些实施方案还包括在至少等离子体暴露之前加入氧化剂。

公开(公告)号：US09297073B2

公开(公告)日：2016-03-29

申请号：US14625846

申请日：2015-02-19

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Wenbo Yan ,  Victor Nguyen ,  Cong Trinh ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: B44C1/22 ,  C23C16/455 ,  H01L21/3065

CPC classification number: C23C16/45534 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3065

Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.

Abstract translation: 本文公开的实施例通常涉及衬底的处理，更具体地涉及使用沉积蚀刻循环来精确控制膜厚度的方法。 特别地，本公开的实施例可以用于在填充高纵横比特征期间控制膜厚度。

公开(公告)号：US20230369031A1

公开(公告)日：2023-11-16

申请号：US18127213

申请日：2023-03-28

Applicant: Applied Materials, Inc.

Inventor： Tomohiko Kitajima ,  Ning Li ,  Chang Seok Kang ,  Naomi Yoshida

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  C23C16/02 ,  C23C16/56 ,  C23C16/34 ,  C23C16/36 ,  C23C16/38

CPC classification number: H01J37/32899 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/67167 ,  C23C16/0227 ,  C23C16/56 ,  C23C16/345 ,  C23C16/36 ,  C23C16/38 ,  C23C16/342 ,  H01J2237/335 ,  H01J2237/332 ,  H01J2237/336 ,  H01J37/32816 ,  H01J2237/20278

Abstract: Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying the silicon-containing dielectric layer. The processing method is performed in a processing tool without breaking vacuum.

公开(公告)号：US20220307134A1

公开(公告)日：2022-09-29

申请号：US17840797

申请日：2022-06-15

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu

IPC: C23C16/455 ,  C23C16/36 ,  H01L29/78 ,  H01L21/02

Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.

公开(公告)号：US20220262619A1

公开(公告)日：2022-08-18

申请号：US17667704

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidl Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.