-
公开(公告)号：US06787387B2
公开(公告)日：2004-09-07
申请号：US10601470
申请日：2003-06-23
Applicant: Kimiya Ikushima , Hiroyoshi Komobuchi , Mikiya Uchida
Inventor： Kimiya Ikushima , Hiroyoshi Komobuchi , Mikiya Uchida
IPC: H01L2100
CPC classification number: G01J5/20 , B81B3/0072 , B81B2201/0207 , B81B2203/0127 , B81C1/00047 , B81C1/00801 , B81C2201/0109 , B81C2201/014 , G01F1/6845 , G01J5/023 , G01J5/024 , G01J5/045 , G01J5/10 , G01J5/34
Abstract: A method for fabricating an electronic device includes the steps of: preparing a cavity defining sacrificial layer, at least the upper surface of which is covered with an etch stop layer; forming at least one first opening in the etch stop layer, thereby partially exposing the surface of the cavity defining sacrificial layer; etching the cavity defining sacrificial layer through the first opening, thereby defining a provisional cavity under the etch stop layer and a supporting portion that supports the etch stop layer thereon; and etching away a portion of the etch stop layer, thereby defining at least one second opening that reaches the provisional cavity through the etch stop layer and expanding the provisional cavity into a final cavity.
-
公开(公告)号：US20040053435A1
公开(公告)日：2004-03-18
申请号：US10601470
申请日：2003-06-23
Applicant: Matsushita Electric Industrial Co., Ltd.
Inventor： Kimiya Ikushima , Hiroyoshi Komobuchi , Mikiya Uchida
IPC: H01L021/00
CPC classification number: G01J5/20 , B81B3/0072 , B81B2201/0207 , B81B2203/0127 , B81C1/00047 , B81C1/00801 , B81C2201/0109 , B81C2201/014 , G01F1/6845 , G01J5/023 , G01J5/024 , G01J5/045 , G01J5/10 , G01J5/34
Abstract: A method for fabricating an electronic device includes the steps of: preparing a cavity defining sacrificial layer, at least the upper surface of which is covered with an etch stop layer; forming at least one first opening in the etch stop layer, thereby partially exposing the surface of the cavity defining sacrificial layer; etching the cavity defining sacrificial layer through the first opening, thereby defining a provisional cavity under the etch stop layer and a supporting portion that supports the etch stop layer thereon; and etching away a portion of the etch stop layer, thereby defining at least one second opening that reaches the provisional cavity through the etch stop layer and expanding the provisional cavity into a final cavity.
Abstract translation: 一种制造电子器件的方法包括以下步骤：制备限定牺牲层的空腔，其至少其上表面被蚀刻停止层覆盖; 在蚀刻停止层中形成至少一个第一开口，从而部分地暴露限定牺牲层的空腔的表面; 蚀刻通过所述第一开口限定牺牲层的所述腔，从而在所述蚀刻停止层下方限定临时空腔，以及在其上支撑所述蚀刻停止层的支撑部分; 并且蚀刻掉蚀刻停止层的一部分，从而限定通过蚀刻停止层到达临时腔的至少一个第二开口，并将临时空腔膨胀成最终空腔。
-
公开(公告)号：US20240043264A1
公开(公告)日：2024-02-08
申请号：US18266514
申请日：2021-12-09
Applicant: Obsidian Sensors, Inc.
Inventor： Tallis CHANG , Sean ANDREWS
CPC classification number: B81B7/0006 , B81C3/001 , B81B2201/0207 , B81B2207/07 , B81C2203/035
Abstract: Some embodiments include methods of manufacturing a plurality of MEMS devices, each device including a first material and a second material with different CTE. The method includes providing a carrier with substantially equal CTE as the first material, the carrier comprising a plurality of cavities. The method also includes positioning a plurality of components in respective cavities of the carrier, the components comprising the second material. In some embodiments, the method includes positioning a layer of the first material on the second material components. In some embodiments, the method includes bonding the first material layer and the second material components. The method also includes removing the carrier and singulating the first material layer to produce the plurality of MEMS devices.
-
公开(公告)号：US11845653B2
公开(公告)日：2023-12-19
申请号：US17440175
申请日：2020-04-01
Applicant: Meridian Innovation Pte Ltd
Inventor： Wan Chia Ang , Piotr Kropelnicki , Ilker Ender Ocak
IPC: B81C1/00
CPC classification number: B81C1/00238 , B81B2201/0207 , B81B2207/012 , B81C2201/0194 , B81C2203/0714 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771 , B81C2203/0792
Abstract: A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.
-
公开(公告)号：US20180299329A1
公开(公告)日：2018-10-18
申请号：US15485942
申请日：2017-04-12
Applicant: RAYTHEON COMPANY
Inventor： Paolo Masini , John William Devitt
CPC classification number: G01J5/046 , B81B3/0081 , B81B2201/0207 , G01J5/0245 , G01J5/045 , G01J5/06 , G01J5/20 , G01J5/22 , G01J2005/065 , H01L31/02164
Abstract: Methods and apparatus for preventing solar damage, and other heat-related damage, to uncooled microbolometer pixels. In certain examples, at least some of the pixels of an uncooled microbolometer are configured with a bimetallic thermal shorting structure that protects the pixel(s) from excessive heat damage. In other examples a thermochroic membrane that becomes highly reflective at temperatures above a certain threshold is applied over the microbolometer pixels to prevent the pixels from being damaged by excessive heat.
-
Patent Agency Ranking
46.发明申请公开(公告)号：US20180215610A1
公开(公告)日：2018-08-02
申请号：US15928008
申请日：2018-03-21
Applicant: ULIS
Inventor： Jérôme Favier , David Bunel
CPC classification number: B81B7/0038 , B81B2201/0207 , B81C1/00269 , B81C1/00285 , B81C2203/0145 , B81C2203/019 , G01J5/20 , H01L23/564 , H01L31/186 , H01L2224/48091 , H01L2924/00014
Abstract: A device having a microelectronic component housed in a hermetically sealed housing having a vacuum inner space, and including a getter that substantially traps only hydrogen, is inert to oxygen and/or to nitrogen, and is housed in said inner space. Each of the constituent parts of the device being likely to degas into the inner space is a mineral material.
-
公开(公告)号：US09969610B2
公开(公告)日：2018-05-15
申请号：US15416206
申请日：2017-01-26
Applicant: Raytheon Company
Inventor： Buu Q. Diep , Adam M. Kennedy , Thomas Allan Kocian , Mark Lamb
IPC: H01L31/0203 , B81B7/00 , B81C1/00
CPC classification number: B81B7/0058 , B81B7/0041 , B81B2201/0207 , B81B2201/04 , B81C1/00269 , B81C1/00317 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/019
Abstract: A microelectromechanical systems (MEMS) package includes a substrate extending between a first pair of outer edges to define a length and a second pair of outer edges to define a width. A seal ring assembly is disposed on the substrate and includes at least one seal ring creating a first boundary point adjacent to at least one MEMS device and a second boundary point adjacent at least one of the outer edges. The package further includes a window lid on the seal ring assembly to define a seal gap containing the at least one MEMS device. The seal ring assembly anchors the window lid to the substrate at the second boundary point such that deflection of the window lid into the seal gap is reduced.
-
公开(公告)号：US09862594B2
公开(公告)日：2018-01-09
申请号：US14207461
申请日：2014-03-12
Applicant: Versana Micro Inc.
Inventor： Bishnu Prasanna Gogoi
CPC classification number: B81B7/02 , B81B2201/0207 , B81B2201/0214 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2207/012 , B81B2207/05 , B81B2207/09 , H01L27/14 , H01L27/16 , H01L27/22 , H01L41/1132 , H01L41/1138 , H01L2924/00 , H05K7/02
Abstract: A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device.
-
公开(公告)号：US09771258B2
公开(公告)日：2017-09-26
申请号：US14748482
申请日：2015-06-24
Applicant: Raytheon Company
Inventor： Buu Q. Diep , Adam M. Kennedy , Thomas Allan Kocian , Mark Lamb
IPC: H01L23/498 , B81C1/00 , B81B7/00
CPC classification number: B81B7/0058 , B81B7/0041 , B81B2201/0207 , B81B2201/04 , B81C1/00269 , B81C1/00317 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/019
Abstract: A microelectromechanical systems (MEMS) package includes a substrate extending between a first pair of outer edges to define a length and a second pair of outer edges to define a width. A seal ring assembly is disposed on the substrate and includes at least one seal ring creating a first boundary point adjacent to at least one MEMS device and a second boundary point adjacent at least one of the outer edges. The package further includes a window lid on the seal ring assembly to define a seal gap containing the at least one MEMS device. The seal ring assembly anchors the window lid to the substrate at the second boundary point such that deflection of the window lid into the seal gap is reduced.
-
50.发明申请公开(公告)号：US20170137281A1
公开(公告)日：2017-05-18
申请号：US15320719
申请日：2015-07-07
Applicant: ULIS
Inventor： Jérôme Favier , David Bunel
CPC classification number: B81B7/0038 , B81B2201/0207 , B81C1/00269 , B81C1/00285 , B81C2203/0145 , B81C2203/019 , G01J5/20 , H01L23/564 , H01L31/186 , H01L2224/48091 , H01L2924/00014
Abstract: A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion.Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300° C.
-
-
-
-
-
-
-
-
-
Search Results
84
records
(took 0.015 seconds)
