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公开(公告)号：US12070773B2
公开(公告)日：2024-08-27
申请号：US18099456
申请日：2023-01-20
Applicant: BFLY OPERATIONS, INC.
Inventor： Lingyun Miao , Jianwei Liu , Keith G. Fife
CPC classification number: B06B1/0292 , B81B3/0021 , B81C1/00158 , B81B2201/0271 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81C2201/0125 , B81C2201/013 , B81C2201/0176 , B81C2203/03
Abstract: An ultrasonic transducer device includes a patterned film stack disposed on first regions of a substrate, the patterned film stack including a metal electrode layer and a bottom cavity layer formed on the metal electrode layer. The ultrasonic transducer device further includes a planarized insulation layer disposed on second regions of the substrate layer, a cavity formed in a membrane support layer and a CMP stop layer, the CMP stop layer including a top layer of the patterned film stack and the membrane support layer formed over the patterned film stack and the planarized insulation layer. The ultrasonic transducer device also includes a membrane bonded to the membrane support layer. The CMP stop layer underlies portions of the membrane support layer but not the cavity.
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公开(公告)号：US20240270565A1
公开(公告)日：2024-08-15
申请号：US18642889
申请日：2024-04-23
Inventor： Kuei-Sung Chang , Shang-Ying Tsai , Wei-Jhih Mao
CPC classification number: B81B3/0054 , B81C1/0019 , B81B2203/0163 , B81C2201/0125 , B81C2201/0132
Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure comprising a spring structure. A first substrate underlies a second substrate. The first and second substrates at least partially define a cavity. A microelectromechanical systems (MEMS) component is arranged in the cavity. The spring structure is disposed between a region of the second substrate and the MEMS component. The spring structure comprises a first layer and a second layer. The first layer continuously extends along a first vertical surface of the second layer.
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公开(公告)号：US11993510B2
公开(公告)日：2024-05-28
申请号：US17840936
申请日：2022-06-15
Inventor： Kuei-Sung Chang , Shang-Ying Tsai , Wei-Jhih Mao
CPC classification number: B81B3/0054 , B81C1/0019 , B81B2203/0163 , B81C2201/0125 , B81C2201/0132
Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including a composite spring. A first substrate underlies a second substrate. A third substrate overlies the second substrate. The first, second, and third substrates at least partially define a cavity. The second substrate comprises a moveable mass in the cavity and between the first and third substrates. The composite spring extends from a peripheral region of the second substrate to the moveable mass. The composite spring is configured to suspend the moveable mass in the cavity. The composite spring includes a first spring layer comprising a first crystal orientation, and a second spring layer comprising a second crystal orientation different than the first crystal orientation.
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公开(公告)号：US11873212B2
公开(公告)日：2024-01-16
申请号：US17184443
申请日：2021-02-24
Applicant: XINTEC INC.
Inventor： Wei-Luen Suen , Jiun-Yen Lai , Hsing-Lung Shen , Tsang-Yu Liu
CPC classification number: B81B7/0067 , B81C1/00317 , B81B2203/0353 , B81C2201/0125 , B81C2201/0132 , B81C2201/0194
Abstract: A chip package includes a semiconductor substrate and a metal layer. The semiconductor substrate has an opening and a sidewall surrounding the opening, in which an upper portion of the sidewall is a concave surface. The semiconductor substrate is made of a material including silicon. The metal layer is located on the semiconductor substrate. The metal layer has plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, in which the metal layer is made of a material including aluminum.
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公开(公告)号：US11806747B2
公开(公告)日：2023-11-07
申请号：US17953155
申请日：2022-09-26
Applicant: BFLY OPERATIONS, INC.
Inventor： Lingyun Miao , Jianwei Liu
CPC classification number: B06B1/0292 , B81B3/0021 , B81C1/00158 , B81B2201/0271 , B81B2203/0127 , B81B2203/04 , B81B2207/015 , B81B2207/07 , B81C2201/013 , B81C2201/0125 , B81C2203/036 , B81C2203/0735
Abstract: An ultrasound transducer device includes an electrode, a membrane, and vias. The membrane is separated from the electrode by a cavity between the membrane and the electrode. The vias electrically connect the electrode to a substrate disposed on an opposite side of the electrode from a side facing the membrane. The vias are disposed in the ultrasound transducer device such that greater than 50% of the vias overlap with the cavity in a plan view.
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Patent Agency Ranking
公开(公告)号：US20230149977A1
公开(公告)日：2023-05-18
申请号：US18099456
申请日：2023-01-20
Applicant: BFLY OPERATIONS, INC.
Inventor： Lingyun Miao , Jianwei Liu , Keith G. Fife
CPC classification number: B06B1/0292 , B81B3/0021 , B81C1/00158 , B81B2201/0271 , B81B2203/0127 , B81C2203/03 , B81B2203/04 , B81C2201/0125 , B81C2201/013 , B81C2201/0176 , B81B2203/0315
Abstract: An ultrasonic transducer device includes a patterned film stack disposed on first regions of a substrate, the patterned film stack including a metal electrode layer and a bottom cavity layer formed on the metal electrode layer. The ultrasonic transducer device further includes a planarized insulation layer disposed on second regions of the substrate layer, a cavity formed in a membrane support layer and a CMP stop layer, the CMP stop layer including a top layer of the patterned film stack and the membrane support layer formed over the patterned film stack and the planarized insulation layer. The ultrasonic transducer device also includes a membrane bonded to the membrane support layer. The CMP stop layer underlies portions of the membrane support layer but not the cavity.
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公开(公告)号：US20180179052A1
公开(公告)日：2018-06-28
申请号：US15894119
申请日：2018-02-12
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US09988262B2
公开(公告)日：2018-06-05
申请号：US15704537
申请日：2017-09-14
Applicant: Infineon Technologies AG
Inventor： Dominic Maier , Joachim Mahler , Daniel Porwol , Alfred Sigl
IPC: B81C1/00
CPC classification number: B81C1/00047 , B81C1/00666 , B81C2201/0125 , B81C2201/013 , B81C2203/0118 , B81C2203/0127
Abstract: A method for fabricating an electronic device is disclosed. In one example, the method comprises providing a semiconductor wafer, forming a plurality of cavities into the semiconductor wafer, filling a stabilization material into the cavities, fabricating a temporary panel by applying a cap sheet onto the semiconductor wafer, the cap sheet covering the cavities, singulating the temporary panel into a plurality of semiconductor devices, fabricating an embedded wafer by embedding the semiconductor devices in an encapsulant, removing the cap sheet of each one of the semiconductor devices, and singulating the embedded wafer into a plurality of electronic devices.
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公开(公告)号：US09663357B2
公开(公告)日：2017-05-30
申请号：US14963362
申请日：2015-12-09
Applicant: Texas Instruments Incorporated
Inventor： Jie Mao , Hau Nguyen , Luu Nguyen , Anindya Poddar
IPC: H01L21/683 , B81C1/00 , B81B7/00
CPC classification number: B81C1/00873 , B81B7/007 , B81B2201/0214 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2201/0292 , B81B2201/047 , B81B2207/07 , B81B2207/098 , B81C1/00333 , B81C2201/0125 , B81C2201/0132 , B81C2201/0159 , B81C2201/0181 , B81C2201/0188 , B81C2203/0136 , H01L21/561 , H01L21/568 , H01L21/6836 , H01L23/3121 , H01L24/19 , H01L2221/68359 , H01L2224/04105 , H01L2224/96 , H01L2924/3511
Abstract: A method for fabricating packaged semiconductor devices (100) with an open cavity (110a) in panel format; placing (process 201) on an adhesive carrier tape a panel-sized grid of metallic pieces having a flat pad (230) and symmetrically placed vertical pillars (231); attaching (process 202) semiconductor chips (101) with sensor systems face-down onto the tape; laminating (process 203) and thinning (process 204) low CTE insulating material (234) to fill gaps between chips and grid; turning over (process 205) assembly to remove tape; plasma-cleaning assembly front side, sputtering and patterning (process 206) uniform metal layer across assembly and optionally plating (process 209) metal layer to form rerouting traces and extended contact pads for assembly; laminating (process 212) insulating stiffener across panel; opening (process 213) cavities in stiffener to access the sensor system; and singulating (process 214) packaged devices by cutting metallic pieces.
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公开(公告)号：US09630831B1
公开(公告)日：2017-04-25
申请号：US14883908
申请日：2015-10-15
Inventor： Jung-Huei Peng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
CPC classification number: B81C1/00238 , B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81C1/00285 , B81C2201/0125 , B81C2201/0154 , B81C2201/019 , B81C2203/0118 , B81C2203/035 , B81C2203/0792
Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
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