Patent search cpc:"B81C2201/0181" Page 5

41.

发明申请
Method For Electrochemical Fabrication 审中-公开
Title translation: 电化学制造方法

公开(公告)号：US20070181430A1

公开(公告)日：2007-08-09

申请号：US11622279

申请日：2007-01-11

Applicant: Adam Cohen

Inventor： Adam Cohen

IPC: C25D5/02

CPC classification number: C25D5/10 , B33Y10/00 , B33Y70/00 , B81C1/00126 , B81C2201/0181 , B81C2201/0197 , B81C2201/032 , C25D1/00 , C25D1/003 , C25D5/022 , C25D5/12 , C25D5/22 , C25D17/06 , H01L21/2885 , H05K3/241 , Y10T428/12486 , Y10T428/239

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。还公开了电镀制品和电镀装置。

42.

发明申请
Tear-resistant thin film methods of fabrication 有权
Title translation: 抗撕裂薄膜制造方法

公开(公告)号：US20060232374A1

公开(公告)日：2006-10-19

申请号：US11396234

申请日：2006-03-31

Applicant: A. Johnson

Inventor： A. Johnson

IPC: H01C1/012

CPC classification number: B81B3/0072 , A61F2/2403 , A61F2/82 , A61F2210/0014 , B81C2201/0181 , B81C2201/038 , Y10T428/24479

Abstract: A thin film device and fabrication method providing optimum tear resistance. A thin film layer is formed with a first and second of rows of holes. The holes in each row are spaced-apart along an axis which extends along an edge of the layer. The holes in one row are in overlapping relationship with adjacent holes in the other row. The holes have a diameter which is sufficiently large so that an imaginary line extending perpendicular from any location along the edge will intersect at least one hole, thus preventing further propagation of any tears or cracks which start from the edge.

Abstract translation: 薄膜器件和提供最佳抗撕裂性的制造方法。薄膜层形成有第一排和第二排孔。沿着沿着该层的边缘延伸的轴线，每行中的孔间隔开。一排中的孔与另一排中的相邻孔重叠。这些孔具有足够大的直径，使得从沿着边缘的任何位置垂直延伸的假想线将与至少一个孔相交，从而防止从边缘开始的任何撕裂或裂纹的进一步传播。

43.

发明申请
Method for electrochemical fabrication 审中-公开

公开(公告)号：US20040065552A1

公开(公告)日：2004-04-08

申请号：US10677409

申请日：2003-10-01

Applicant: University of Southern California

Inventor： Adam L. Cohen

IPC: C25D005/02

CPC classification number: C25D5/10 , B33Y10/00 , B33Y70/00 , B81C1/00126 , B81C2201/0181 , B81C2201/0197 , B81C2201/032 , C25D1/00 , C25D1/003 , C25D5/022 , C25D5/12 , C25D5/22 , C25D17/06 , H01L21/2885 , H05K3/241 , Y10T428/12486 , Y10T428/239

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

44.

发明公开
MICRO-ELECTRO MECHANICAL SYSTEM AND MANUFACTURING METHOD THEREOF 审中-公开

公开(公告)号：US20240083742A1

公开(公告)日：2024-03-14

申请号：US18510628

申请日：2023-11-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Li YANG , Kai-Di WU , Ming-Da CHENG , Wen-Hsiung LU , Cheng Jen LIN , Chin Wei KANG

IPC: B81B3/00 , B81C1/00

CPC classification number: B81B3/0081 , B81C1/0069 , B81B2203/0127 , B81B2203/019 , B81B2203/0353 , B81B2207/015 , B81C2201/013 , B81C2201/0181 , B81C2203/032 , B81C2203/0735

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

45.

发明公开
MEMS MICROPHONE WITH AN ANCHOR 审中-公开

公开(公告)号：US20230234837A1

公开(公告)日：2023-07-27

申请号：US18156181

申请日：2023-01-18

Applicant: SKYWORKS GLOBAL PTE. LTD.

Inventor： Guofeng Chen , Yu Hui , Myeong Gweon Gu , Jae Hyung Lee , Jaemyoung Jhung

IPC: B81C1/00 , B81B3/00

CPC classification number: B81C1/00158 , B81B3/0021 , B81C2201/0105 , B81C2201/0132 , B81C2201/0181 , B81C2203/0118 , B81B2201/0257 , B81B2203/0353 , B81B2203/0307 , B81B2203/04 , B81B2203/0315 , B81B2203/0127

Abstract: A method for manufacturing a microelectromechanical systems microphone comprises depositing a membrane on a first sacrificial layer on a substrate, releasing the membrane by removing the first sacrificial layer, depositing a resist layer on the membrane, and patterning the resist layer to expose the membrane, such that at least one section of resist layer remains at at least one edge of the membrane to form an anchor. A microphone manufactured by this method is also provided. There is also provided a method for manufacturing a microelectromechanical systems microphone comprising depositing a membrane on a first sacrificial layer deposited on a substrate, releasing the membrane by removing at least the first sacrificial layer, depositing a resist layer on membrane, patterning the resist layer to expose an edge of the membrane, and forming an anchor at the exposed edge of the membrane. A microphone manufactured by this method is also provided.

46.

发明申请
Mems Manufacturing Method and Mems Manufacturing Apparatus 审中-公开

公开(公告)号：US20180267075A1

公开(公告)日：2018-09-20

申请号：US15763240

申请日：2016-03-18

Applicant: Hitachi, Ltd.

Inventor： Shuntaro MACHIDA , Nobuyuki SUGII , Keiji WATANABE , Daisuke RYUZAKI , Tetsufumi KAWAMURA , Kazuki WATANABE

IPC: G01P15/08 , B81C99/00

CPC classification number: G01P15/0802 , B81C99/001 , B81C99/0025 , B81C99/0065 , B81C2201/0143 , B81C2201/0181 , B81C2203/038 , G01P15/125

Abstract: For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

47.

发明申请
LOW FRICTION COATING FORMED OF BORON-DOPED ZINC OXIDE THIN FILM AND MICROMACHINE 审中-公开

公开(公告)号：US20180155183A1

公开(公告)日：2018-06-07

申请号：US15576376

申请日：2016-05-25

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Michiko SASAKI , Masahiro GOTO , Akira KASAHARA , Masahiro TOSA

IPC: B81B3/00 , C23C14/35 , C10M103/06 , C23C14/08

CPC classification number: B81B3/0005 , B81B3/0078 , B81B7/02 , B81B2201/035 , B81C2201/0119 , B81C2201/0181 , C10M103/06 , C10M2201/0623 , C23C14/08 , C23C14/086 , C23C14/35

Abstract: Low friction coating of the present invention includes a boron-doped zinc oxide thin film, wherein piezoelectric polarization in a vertical direction perpendicular to a film surface and a lateral direction horizontal to the film surface occurs and a magnitude of the piezoelectric polarization in the vertical direction is within 150 pm and a magnitude of the piezoelectric polarization in the lateral direction is within 100 pm at 90% or more of measurement points. This makes it possible to greatly decrease the friction in a nanometer order.

48.

发明申请
PROCESS FOR PRODUCING AN ELECTROMECHANICAL DEVICE 审中-公开

公开(公告)号：US20180148328A1

公开(公告)日：2018-05-31

申请号：US15825818

申请日：2017-11-29

Applicant: Commissariat a l'energie atomique et aux energies alternatives

Inventor： Vincent AGACHE , Francois BALERAS

IPC: B81C1/00

CPC classification number: B81C1/00476 , B81B3/0021 , B81B2201/0214 , B81B2201/0264 , B81B2203/0118 , B81C1/00944 , B81C1/00952 , B81C2201/0109 , B81C2201/0132 , B81C2201/0176 , B81C2201/0178 , B81C2201/0181 , B81C2201/019 , B81C2201/053

Abstract: The invention is a process for producing an electromechanical device including a movable portion that is able to deform with respect to a fixed portion. The process implements steps based on fabrication microtechnologies, applied to a substrate including an upper layer, an intermediate layer and a lower layer. These steps are: a) forming first apertures in the upper layer; b) forming an empty cavity in the intermediate layer, which step is referred to as a pre-release step because a central portion of the upper layer lying between the first apertures is pre-released; c) applying what is called a blocking layer to the upper layer, this layer covering the first apertures, the blocking layer and the central portion together forming a suspended microstructure above the empty cavity; d) producing a boundary trench in the suspended microstructure, so as to form, in this microstructure, a movable portion and a fixed portion, the movable portion forming a movable member of the electromechanical device.