Abstract:
An electron beam device for inspecting a target substrate or specimen thereon includes a beam separator with an asymmetric quadrupole electrostatic deflector for improving field uniformity for a single direction of deflection. The asymmetric quadrupole electrostatic deflector includes two orthogonal electrode plates spanning roughly 60 degrees and two electrode plates spanning roughly 120 degrees, the two latter plates defining a unidirectional deflection field. The device generates a primary electron beam and focuses the primary electron beam along an optical axis into the target substrate. Secondary electrons detected at the target substrate are focused into a secondary electron beam. The beam separator with asymmetric quadrupole electrostatic deflector deflects the secondary electron beam away from the axis of the primary electron beam in the direction of deflection and into a detector array.
Abstract:
It is possible to determine an optimal parasitic aberration adjustment amount even when the relationship of the parasitic aberration adjustment amount with respect to the field intensity of multiple poles changes nonlinearly. To this end, in the present invention, an aberration correction amount is computed by measuring an aberration coefficient of an optical unit of a charged particle beam device, and at the same time, the present value of a power supply control value applied to an aberration corrector is measured. Then, the parasitic aberration adjustment amount for suppressing the amount of a parasitic aberration generated in the aberration corrector is computed on the basis of the aberration correction amount and the present value of the power supply control value.
Abstract:
A spherical aberration corrector is offered which permits a correction of deviation of the circularity of at least one of an image and a diffraction pattern and a correction of on-axis aberrations to be carried out independently. The spherical aberration corrector (100) is for use with a charged particle beam instrument (1) for obtaining the image and the diffraction pattern and has a hexapole field generating portion (110) for producing plural stages of hexapole fields, an octopole field superimposing portion (120) for superimposing an octopole on at least one of the plural stages of hexapole fields to correct deviation of the circularity of at least one of the image and diffraction pattern, and a deflection portion (130) for deflecting a charged particle beam.
Abstract:
One embodiment relates to an apparatus for aberration correction in an electron beam lithography system. An inner electrode surrounds a pattern generating device, and there is at least one outer electrode around the inner electrode. Each of the inner and outer electrodes has a planar surface in a plane of the pattern generating device. Circuitry is configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode. The voltage levels may be set to correct a curvature of field in the electron beam lithography system. Another embodiment relates to an apparatus for aberration correction used in an electron based system, such as an electron beam inspection, or review, or metrology system. Other embodiments, aspects and features are also disclosed.
Abstract:
A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.
Abstract:
The chromatic aberration corrector (100) has a first multipole element (110) for producing a first electromagnetic field and a second multipole element (120) for producing a second electromagnetic field. The first multipole element (110) first, second, and third portions (110a, 110b, 110c) arranged along an optical axis (OA) having a thickness and producing a quadrupole field in which an electric quadrupole field and a magnetic quadrupole field are superimposed. In the first and third portions (110a, 110c), the electric quadrupole field is set stronger than the magnetic quadrupole field. In the second portion (110b), the magnetic quadrupole field is set stronger than the electric quadrupole field. The second portion (110b) produces a two-fold astigmatism component that is opposite in sign to two-fold astigmatism components produced by the first portion (110a) and third portion (110c).
Abstract:
A transmission electron microscope includes an electron beam source to generate an electron beam. Beam optics are provided to converge the electron beam. An aberration corrector corrects the electron beam for at least a spherical aberration. A specimen holder is provided to hold a specimen in the path of the electron beam. A detector is used to detect the electron beam transmitted through the specimen. The transmission electron microscope may operate in an incoherent mode and may be used to locate a sequence of objects on a molecule.
Abstract:
A correction device for a charged particle beam device for decreasing, correcting or inverting (that is adjusting) the spherical aberration of a charged particle beam is described. The correction principle is similar to that of common multipole-Correctors. But unlike common devices of that kind this new correction device gets along entirely with plane apertures having specially shaped holes in order to supply the multipoles required for correction and is therefore predestined for miniaturization and the use in multi column devices.
Abstract:
A method of compensating mechanical, magnetic and/or electrostatic inaccuracies in a scanning charged particle beam device is described. The method includes an alignment procedure, wherein the following steps are conducted: compensating 4-fold astigmatism with an element having at least 8-pole compensation capability, wherein the aligning and compensating steps of the alignment procedure act on a charged particle beam with beam dimensions in two orthogonal directions each of at least 50 μm and coaxially aligned with at least the element having at least the 8-pole compensation capability.
Abstract:
The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.