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    Charged particle beam apparatus
    41.
    发明授权
    Charged particle beam apparatus 有权
    带电粒子束装置

    公开(公告)号：US09502212B2

    公开(公告)日：2016-11-22

    申请号：US14760259

    申请日：2014-01-22

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Yuzuru Mizuhara ,  Miki Isawa ,  Minoru Yamazaki ,  Hitoshi Tamura ,  Hideyuki Kazumi

    IPC: H01J37/26 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28

    CPC classification number: H01J37/268 ,  H01J37/1472 ,  H01J37/244 ,  H01J37/265 ,  H01J37/266 ,  H01J37/28 ,  H01J37/3178 ,  H01J2237/24564 ,  H01J2237/28 ,  H01J2237/2809

    Abstract: An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams (2(a), 2(b)) emitted from a sample (23) are deflected by a charged particle deflector (33) in a state in which the sample (23) is irradiated with a charged particle beam (1), and information regarding a sample potential is detected by using a signal obtained at that time.

    Abstract translation: 本发明的目的是提供一种能够通过使用带电粒子束来测量样品表面的电位或检测由于样品充电而发生变化的装置状态的变化的补偿值的方法和装置， 通过测量由带电粒子束的照射引起的样品电位。 为了实现该目的，提供了一种方法和装置，其中从样品（23）发射的带电粒子束（2（a），2（b））由带电粒子偏转器（33）在某种状态下偏转 其中样品（23）被带电粒子束（1）照射，并且通过使用当时获得的信号来检测关于样品电位的信息。

    Charged Particle Beam Apparatus
    42.
    发明申请
    Charged Particle Beam Apparatus 有权
    带电粒子束装置

    公开(公告)号：US20150348748A1

    公开(公告)日：2015-12-03

    申请号：US14760259

    申请日：2014-01-22

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Yuzuru MIZUHARA ,  Miki ISAWA ,  Minoru YAMAZAKI ,  Hitoshi TAMURA ,  Hideyuki KAZUMI

    IPC: H01J37/244 ,  H01J37/26 ,  H01J37/147 ,  H01J37/28

    CPC classification number: H01J37/268 ,  H01J37/1472 ,  H01J37/244 ,  H01J37/265 ,  H01J37/266 ,  H01J37/28 ,  H01J37/3178 ,  H01J2237/24564 ,  H01J2237/28 ,  H01J2237/2809

    Abstract: An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams (2(a), 2(b)) emitted from a sample (23) are deflected by a charged particle deflector (33) in a state in which the sample (23) is irradiated with a charged particle beam (1), and information regarding a sample potential is detected by using a signal obtained at that time.

    Abstract translation: 本发明的目的是提供一种能够通过使用带电粒子束来测量样品表面的电位或检测由于样品充电而发生变化的装置状态的变化的补偿值的方法和装置， 通过测量由带电粒子束的照射引起的样品电位。 为了实现该目的，提供了一种方法和装置，其中从样品（23）发射的带电粒子束（2（a），2（b））由带电粒子偏转器（33）在某种状态下偏转 其中样品（23）被带电粒子束（1）照射，并且通过使用当时获得的信号来检测关于样品电位的信息。

    Electron microscope
    43.
    发明授权
    Electron microscope 有权
    电子显微镜

    公开(公告)号：US08841615B2

    公开(公告)日：2014-09-23

    申请号：US13637227

    申请日：2011-02-22

    Applicant: Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

    Inventor： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

    IPC: H01J37/26 ,  H01J37/073

    CPC classification number: H01J37/26 ,  H01J37/073 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557

    Abstract: An electron microscope which utilizes a polarized electron beam and can obtain a high contrast image of a sample is provided. The microscope includes: a laser; a polarization apparatus that polarizes a laser beam into a circularly polarized laser beam; a semiconductor photocathode that is provided with a strained superlattice semiconductor layer and generates a polarized electron beam when irradiated with the circularly polarized laser beam; a transmission electron microscope that utilizes the polarized electron beam; an electron beam intensity distribution recording apparatus arranged at a face reached by the polarized electron beam that has transmitted through the sample. An electron beam intensity distribution recording apparatus records an intensity distribution before and after the polarization of the electron beam is reversed, and a difference acquisition apparatus calculates a difference therebetween.

    Abstract translation: 提供了利用偏振电子束并且可以获得样品的高对比度图像的电子显微镜。 显微镜包括：激光; 将激光束偏振成圆偏振激光束的偏振装置; 半导体光电阴极，其设置有应变超晶格半导体层，并且当被圆偏振激光束照射时产生偏振电子束; 利用偏振电子束的透射电子显微镜; 电子束强度分布记录装置，布置在透过样品的偏振电子束所达到的面上。 电子束强度分布记录装置记录电子束的偏振前后的强度分布，差分获取装置计算其间的差。

    Magnetic Domain Imaging System
    45.
    发明申请
    Magnetic Domain Imaging System 有权
    磁畴成像系统

    公开(公告)号：US20100294932A1

    公开(公告)日：2010-11-25

    申请号：US12781121

    申请日：2010-05-17

    Applicant: Takeshi Tomita

    Inventor： Takeshi Tomita

    IPC: H01J37/26 ,  H01J37/147

    CPC classification number: H01J37/266 ,  H01J37/147 ,  H01J2237/1405 ,  H01J2237/2008 ,  H01J2237/2588

    Abstract: A magnetic domain imaging system is offered which permits application of a strong magnetic field to a specimen. The imaging system includes a transmission electron microscope having an objective lens. The specimen that is magnetic in nature is placed in the upper polepiece of the objective lens. An electron beam transmitted through the specimen is imaged and displayed on a display device. A field application coil assembly for applying a magnetic field to the specimen and two deflection coil assemblies for bringing the beam deflected by the field applied to the specimen back to the optical axis are mounted in the upper polepiece.

    Abstract translation: 提供了磁场成像系统，其允许对样本施加强磁场。 成像系统包括具有物镜的透射电子显微镜。 本质上是磁性的样品被放置在物镜的上极片中。 通过试样透射的电子束被成像并显示在显示装置上。 用于向样本施加磁场的场应用线圈组件和用于将由施加到样本的磁场偏转的光束引导到光轴的两个偏转线圈组件安装在上极靴中。

    Method of determining degree of charge-up induced by plasma used for manufacturing semiconductor device and apparatus therefor
    47.
    发明授权
    Method of determining degree of charge-up induced by plasma used for manufacturing semiconductor device and apparatus therefor 有权
    确定用于制造半导体器件的等离子体引起的充电程度的方法及其装置

    公开(公告)号：US06657192B1

    公开(公告)日：2003-12-02

    申请号：US09640088

    申请日：2000-08-17

    Applicant: Ji-soo Kim ,  Wan-jae Park ,  Kyoung-sub Shin

    Inventor： Ji-soo Kim ,  Wan-jae Park ,  Kyoung-sub Shin

    IPC: G01N2300

    CPC classification number: H01J37/32935 ,  H01J37/266 ,  H01J2237/004 ,  H01J2237/2594

    Abstract: In a method for determining the degree of charge-up induced by plasma used for manufacturing a semiconductor device and an apparatus therefor, a predetermined region on a surface of a wafer on which a plasma process has been performed is repeatedly scanned with a primary electron beam. Secondary electrons generated by a reaction between the primary electron beam and the surface of the wafer that are emitted to the outside of the surface of the wafer are collected. The degree of charge-up induced at the surface of the wafer by the plasma used during the plasma process is determined from the change in the amount of collected secondary electrons. Determination as to whether a contact hole is opened or as to the degree of degradation of a gate insulating layer is made based on the degree of charge-up.

    Abstract translation: 在用于确定用于制造半导体器件的等离子体引起的充电程度的方法及其装置中，在其上进行了等离子体处理的晶片的表面上的预定区域被一次电子束 。 收集由一次电子束和晶片表面之间的反应产生的二次电子，这些二次电子被发射到晶片表面的外部。 由等离子体工艺中使用的等离子体在晶片表面引起的充电程度由收集的二次电子量的变化确定。 基于充电的程度来确定接触孔是打开还是关于栅极绝缘层的劣化程度。

    Method of inspecting pattern and inspecting instrument
    49.
    发明授权
    Method of inspecting pattern and inspecting instrument 有权
    检查模式和检验仪器的方法

    公开(公告)号：US06586952B2

    公开(公告)日：2003-07-01

    申请号：US09881000

    申请日：2001-06-15

    Applicant: Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

    Inventor： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

    IPC: G01R31305

    CPC classification number: H01J37/222 ,  G01R31/307 ,  H01J37/256 ,  H01J37/263 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2813 ,  H01J2237/2817 ,  H01J2237/304

    Abstract: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

    Abstract translation: 电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。 结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷 作为亮度的差异。 通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。 故障部分的图像，亮度和分布信息在检查后自动保存并输出。

    Mobile ion film memory
    50.
    发明授权
    Mobile ion film memory 失效
    手机离子膜记忆

    公开(公告)号：US4090253A

    公开(公告)日：1978-05-16

    申请号：US643546

    申请日：1975-12-22

    Applicant: Francis John Salgo

    Inventor： Francis John Salgo

    IPC: G11C11/23 ,  G11C13/04 ,  H01J29/00 ,  H01J31/58 ,  H01J37/26 ,  G11C11/42

    CPC classification number: G11C11/23 ,  G11C13/048 ,  H01J29/00 ,  H01J31/58 ,  H01J37/266

    Abstract: A memory device and method is disclosed wherein positions of ions associated with a film are varied locally with respect to the film's surface by an electric field. A writing and erasing field is created by voltage modulating the film's conducting substrate in synchronization with low intensity electron bombardment of a local area of the film's surface by a scanning electron beam.The ion's position in the film varies the film's surface potential and alters the angular distribution imparted by its surface to primary diffracted and secondary emitted electrons. In the invention's read mode a scanning electron beam, combined with a detector discriminator, analyzes these emitted electrons to determine the surface potential at each address on the film thus reading out data stored in the film. A second means of reading out stored information utilizing detection of low energy electrons selectively diffracted by ions near the film's surface is disclosed.

    Abstract translation: 公开了一种存储器件和方法，其中与膜相关的离子的位置通过电场相对于膜的表面局部变化。 通过扫描电子束与薄膜表面的局部区域的低强度电子轰击同步地对薄膜的导电基板进行电压调制来创建写入和擦除场。

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