公开(公告)号：US20230298911A1

公开(公告)日：2023-09-21

申请号：US18323941

申请日：2023-05-25

Applicant: Applied Materials, Inc.

Inventor： Ravikumar Patil

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/673 ,  H01J37/32

CPC classification number: H01L21/67115 ,  H01J37/32082 ,  H01L21/67346 ,  H01L21/68785

Abstract: Exemplary substrate processing system may include a chamber body that defines a processing region. The systems may include a liner positioned atop the chamber body. The liner may include first disconnect members. The systems may include a faceplate that is positioned atop the liner. The systems may include a support disposed within the chamber body. The support may include a plate comprising a heater. The plate may include second disconnect members. The support may include a shaft coupled with the plate. The support may include a dynamic plate disposed about the shaft below the plate. The support may include metallic straps that couple the plate with the dynamic plate. The dynamic plate may include inner disconnect members and outer disconnect members. Inner disconnect members may be engageable with second disconnect members in a transfer position. Outer disconnect members may be engageable with first disconnect members in a process position.

公开(公告)号：US20230253183A1

公开(公告)日：2023-08-10

申请号：US18133356

申请日：2023-04-11

Applicant: Reno Technologies, Inc.

Inventor： Anton Mavretic ,  Ian M. Costanzo ,  Ronald Anthony Decker

IPC: H01J37/32 ,  H01L21/3065 ,  H02M3/335 ,  H03H7/40 ,  H01L21/311 ,  H01L21/02 ,  H03K17/687 ,  H03H7/38 ,  H04B1/44 ,  H01L29/20 ,  H01L29/778 ,  H01L29/861

CPC classification number: H01J37/32082 ,  H01L21/3065 ,  H02M3/33569 ,  H03H7/40 ,  H01L21/31116 ,  H01L21/02274 ,  H03K17/687 ,  H01L28/40 ,  H03H7/38 ,  H04B1/44 ,  H01L29/2003 ,  H01L29/7787 ,  H01L29/861 ,  H01L28/20 ,  H01J2237/334 ,  H03K2017/6875 ,  H03K17/691

Abstract: In one embodiment, an impedance matching network includes a variable reactance circuit having fixed reactance components and corresponding switching circuits. Each switching circuit includes a diode and a driver circuit. The driver circuit includes, coupled in series, a biasing current source positioned to provide a bias current to bias the diode, a first switch, a second switch, and a resistor. For each diode of each switching circuit, the control circuit is configured to receive a value related to a voltage drop on the resistor and, based on the value related to the voltage drop, adjust the bias current being provided by the biasing current source.

公开(公告)号：US11721545B2

公开(公告)日：2023-08-08

申请号：US17035107

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar Singh ,  Rick Kustra ,  Vinayak Vishwanath Hassan ,  Bhaskar Kumar ,  Krishna Nittala ,  Pramit Manna ,  Kaushik Comandoor Alayavalli ,  Ganesh Balasubramanian

IPC: H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  B08B7/00 ,  C23C16/505 ,  C23C16/26 ,  C23C16/44

CPC classification number: H01L21/02274 ,  B08B7/0035 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32862 ,  H01L21/02115 ,  H01L21/0332

Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 Å in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

公开(公告)号：US20230238226A1

公开(公告)日：2023-07-27

申请号：US17974045

申请日：2022-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Hyun LEE ,  Su Ji GIM ,  Dong Jun KA ,  Kyung Nam KANG ,  Hong Sik PARK ,  Deok Cheon SON ,  Jeong Yeon SONG ,  Sun Hee CHOY

IPC: H01J37/32 ,  H01L21/285 ,  C23C16/505 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01J37/32816 ,  H01J37/32743 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/28568 ,  C23C16/505 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45536 ,  H01J2237/3321 ,  H01J37/32862 ,  H01J2237/182 ,  H01J37/32082

Abstract: A semiconductor device manufacturing method comprising loading a substrate into a substrate treatment apparatus, performing a deposition process on the substrate, and cleaning the substrate treatment apparatus. The substrate treatment apparatus includes a housing defining a treatment area in which the deposition process is performed, a gas supply supplying a first process gas at a flow rate of 1000 sccm to 15000 sccm and supplying a second process gas, a remote plasma supply connected to the gas supply, generating a first process plasma and a second process plasma by applying RF power to plasma-process the first process gas and the second process gas, and a shower head installed in the housing to supply the first process plasma and the second process plasma to the treatment area. The second process plasma cleans a membrane material deposited on an inner wall of the housing.

公开(公告)号：US11670491B2

公开(公告)日：2023-06-06

申请号：US16929881

申请日：2020-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-chun Yang ,  Po-Wei Liang ,  Chao-Hung Wan ,  Yi-Ming Lin ,  Liu Che Kang

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/32082 ,  H01J2237/0266

Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.

公开(公告)号：US11664247B2

公开(公告)日：2023-05-30

申请号：US17072750

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Ravikumar Patil

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/687 ,  H01L21/673 ,  H01J37/32

CPC classification number: H01L21/67115 ,  H01J37/32082 ,  H01L21/67346 ,  H01L21/68785

Abstract: Exemplary substrate processing system may include a chamber body that defines a processing region. The systems may include a liner positioned atop the chamber body. The liner may include first disconnect members. The systems may include a faceplate that is positioned atop the liner. The systems may include a support disposed within the chamber body. The support may include a plate comprising a heater. The plate may include second disconnect members. The support may include a shaft coupled with the plate. The support may include a dynamic plate disposed about the shaft below the plate. The support may include metallic straps that couple the plate with the dynamic plate. The dynamic plate may include inner disconnect members and outer disconnect members. Inner disconnect members may be engageable with second disconnect members in a transfer position. Outer disconnect members may be engageable with first disconnect members in a process position.

公开(公告)号：US11664232B2

公开(公告)日：2023-05-30

申请号：US17098426

申请日：2020-11-15

Applicant: SPTS Technologies Limited

Inventor： Huma Ashraf ,  Kevin Riddell ,  Codrin Prahoveanu

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/67 ,  H01L21/683 ,  H01L29/16

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32715 ,  H01L21/308 ,  H01L21/67069 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/334 ,  H01L29/16 ,  H01L29/1608

Abstract: A structure comprising a substrate and a component which forms involatile metal etch products is plasma etched. A structure comprising a substrate and a component which forms involatile metal etch products is provided. The structure is positioned on a support within a chamber having a first gas inlet arrangement comprising one or more gas inlets and a second gas inlet arrangement comprising one or more gas inlets. The structure is etched by performing a first plasma etch step using a first etch process gas mixture which is only introduced into the chamber through the first gas inlet arrangement. The structure is further etched by performing a second plasma etch step using a second etch process gas mixture which is only introduced into the chamber through the second gas inlet arrangement.

公开(公告)号：US20230162953A1

公开(公告)日：2023-05-25

申请号：US17913008

申请日：2020-03-23

Applicant: LAM RESEARCH CORPORATION

Inventor： Hui Ling HAN ,  Seetharaman RAMACHANDRAN

IPC: H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01L21/68735 ,  H01J2237/24585 ,  H01J2237/024 ,  H01J2237/24578 ,  H01J2237/334

Abstract: A substrate processing system includes a substrate support assembly to support a semiconductor substrate during processing of the semiconductor substrate in the substrate processing system. A first edge ring is arranged around the substrate support assembly. The first edge ring is movable relative to the substrate support assembly. A second edge ring is arranged around the substrate support assembly and under the first edge ring. A controller is configured to compensate a height of the first edge ring based on erosion of the first and second edge rings.

公开(公告)号：US20190237337A1

公开(公告)日：2019-08-01

申请号：US16328228

申请日：2018-01-31

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako MATSUI ,  Tatehito USUI ,  Masaru IZAWA ,  Kenichi KUWAHARA

IPC: H01L21/3065 ,  H01L21/66 ,  H01L21/308 ,  H01L21/67 ,  H01J37/32 ,  G01B11/06

CPC classification number: H01L21/30655 ,  G01B11/0625 ,  H01J37/32082 ,  H01J37/32715 ,  H01J37/32963 ,  H01J2237/24578 ,  H01J2237/332 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

Abstract: In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time. There are included the depo process (S1) of introducing a reactive gas having a deposit property to a processing chamber and forming a deposit layer over the surface of a pattern to be etched of a substrate to be etched, the etching process (S2) of removing a reaction product of the deposit layer and the surface of the pattern to be etched, and a monitoring process (S3) of irradiating light to the pattern to be etched at the time of the depo process of cycle etching for executing two processes alternately and working a fine pattern and monitoring a change amount of the film thickness of the deposit layer by change of a coherent light having a specific wavelength reflected by the pattern to be etched, the depo process being for forming the deposit layer, in which a processing condition of processes for forming the deposit layer of the next cycle and onward of cycle etching is determined so that an indicator of the depo film thickness calculated from the change amount of the film thickness of the deposit layer monitored falls in a predetermined range compared to reference data.

公开(公告)号：US20190212128A1

公开(公告)日：2019-07-11

申请号：US16356317

申请日：2019-03-18

Applicant: Applied Materials, Inc.

Inventor： Khokan C. PAUL ,  Edward BUDIARTO ,  Todd EGAN ,  Mehdi VAEZ-IRAVANI ,  Jeongmin LEE ,  Dale R. DU BOIS ,  Terrance Y. LEE

IPC: G01B11/06 ,  H01J37/32 ,  C23C16/52 ,  H01L21/66 ,  C23C16/509 ,  G01B7/06

CPC classification number: G01B11/0616 ,  C23C16/509 ,  C23C16/52 ,  G01B7/085 ,  H01J37/32082 ,  H01J37/32935 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/30

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.