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    ELECTRON BEAM APPARATUS WITH ADJUSTABLE AIR GAP
    41.
    发明申请
    ELECTRON BEAM APPARATUS WITH ADJUSTABLE AIR GAP 审中-公开
    电子束设备与可调节的空气隙

    公开(公告)号：US20170062172A1

    公开(公告)日：2017-03-02

    申请号：US15246821

    申请日：2016-08-25

    Applicant: Energy Sciences Inc.

    Inventor： Imtiaz J. Rangwalla ,  Rich Alexy ,  Edward Maguire

    IPC: H01J37/02 ,  H01J37/30

    CPC classification number: G21K5/00 ,  G21K5/02

    Abstract: An electron beam processing apparatus for treating a substrate is provided. The apparatus has an electron beam generating assembly housed in a chamber that includes a filament for generating a plurality of electrons upon heating. The apparatus may also have a foil support assembly that is configured to direct the plurality of electrons through a thin foil out of the chamber. The apparatus may further have a processing assembly that is configured to pass the substrate by the thin foil so that the plurality of electrons penetrates the substrate and cause a chemical reaction. A distance of an air gap between the thin foil and the substrate may be adjustable.

    Abstract translation: 提供了一种用于处理基板的电子束处理装置。 该装置具有容纳在包括用于在加热时产生多个电子的细丝的室中的电子束产生组件。 该装置还可以具有箔支撑组件，其被配置成将多个电子引导通过薄膜离开室。 该设备还可以具有处理组件，该处理组件被配置为通过薄箔使衬底通过，使得多个电子穿透衬底并引起化学反应。 薄箔和基板之间的气隙的距离可以是可调节的。

    Substrate processing apparatus and substrate processing method using same
    43.
    发明授权
    Substrate processing apparatus and substrate processing method using same 有权
    基板处理装置及其基板处理方法

    公开(公告)号：US09564287B2

    公开(公告)日：2017-02-07

    申请号：US14036885

    申请日：2013-09-25

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

    IPC: H01J37/32 ,  H01J37/02

    CPC classification number: H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

    Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

    Abstract translation: 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

    High-power pulsed magnetron sputtering process as well as a high-power electrical energy source
    44.
    发明授权
    High-power pulsed magnetron sputtering process as well as a high-power electrical energy source 有权
    大功率脉冲磁控溅射工艺以及大功率电能源

    公开(公告)号：US09551066B2

    公开(公告)日：2017-01-24

    申请号：US12510543

    申请日：2009-07-28

    Applicant: Jones Alami ,  Georg Erkens ,  Jürgen Müller ,  Jörg Vetter

    Inventor： Jones Alami ,  Georg Erkens ,  Jürgen Müller ,  Jörg Vetter

    IPC: C23C14/34 ,  C23C14/35 ,  C23C14/06 ,  H01J37/34 ,  H01J37/02

    CPC classification number: C23C14/3485 ,  C23C14/06 ,  C23C14/35 ,  H01J37/026 ,  H01J37/3408 ,  H01J37/3444 ,  H01J37/3467

    Abstract: A high-power pulsed magnetron sputtering process, wherein within a process chamber by means of an electrical energy source a sequence of complex discharge pulses is produced by applying an electrical voltage between an anode and a cathode in order to ionize a sputtering gas. The complex discharge pulse is applied for a complex pulse time. The cathode has a target comprising a material to be sputtered for the coating of a substrate, and the complex discharge pulse includes an electrical high-power sputtering pulse having a negative polarity with respect to the anode and being applied for a first pulse-time, the high-power sputtering pulse being followed by an electrical low-power charge cleaning pulse having a positive polarity with respect to the anode and being applied for a second pulse-time. The ratio τ1/τ2 of the first pulse-time (τ1) in proportion to the second pulse-time (τ2) is 0.5 at the most.

    Abstract translation: 一种高功率脉冲磁控溅射工艺，其中通过电能源在处理室内，通过在阳极和阴极之间施加电压来产生一系列复杂的放电脉冲，以便电离溅射气体。 复合放电脉冲施加于复数脉冲时间。 阴极具有包括用于涂覆基板的溅射材料的靶，并且复合放电脉冲包括相对于阳极具有负极性并被施加第一脉冲时间的电高功率溅射脉冲， 高功率溅射脉冲之后是相对于阳极具有正极性并被施加第二脉冲时间的电低功率电荷清除脉冲。 与第二脉冲时间（τ2）成比例的第一脉冲时间（τ1）的比率τ1/τ2最多为0.5。

    Charged-particle beam device for irradiating a charged particle beam on a sample
    45.
    发明授权
    Charged-particle beam device for irradiating a charged particle beam on a sample 有权
    用于将带电粒子束照射在样品上的带电粒子束装置

    公开(公告)号：US09543113B2

    公开(公告)日：2017-01-10

    申请号：US14759241

    申请日：2014-01-10

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Yasushi Ebizuka ,  Seiichiro Kanno ,  Naoya Ishigaki ,  Masashi Fujita

    IPC: H01L21/00 ,  H01J37/20 ,  H01J37/02 ,  H01J37/28 ,  H01J37/09

    CPC classification number: H01J37/20 ,  H01J37/026 ,  H01J37/09 ,  H01J37/28 ,  H01J2237/2007

    Abstract: The present invention explains a charged-particle beam device for the purpose of highly accurately measuring electrostatic charge of a sample in a held state by an electrostatic chuck (105). In order to attain the object, according to the present invention, there is proposed a charged-particle beam device including an electrostatic chuck (105) for holding a sample on which a charged particle beam is irradiated and a sample chamber (102) in which the electrostatic chuck (105) is set. The charged-particle beam device includes a potential measuring device that measures potential on a side of an attraction surface for the sample of the electrostatic chuck (105) and a control device that performs potential measurement by the potential measuring device in a state in which the sample is attracted by the electrostatic chuck (105).

    Abstract translation: 本发明解释了一种带电粒子束装置，用于通过静电卡盘（105）高度准确地测量处于保持状态的样品的静电荷。 为了达到上述目的，本发明提出一种带电粒子束装置，其特征在于，包括：静电卡盘（105），用于保持照射有带电粒子束的样品和样品室（102），所述样品室 静电吸盘（105）被设定。 带电粒子束装置包括：电位测量装置，其测量用于静电卡盘（105）的样本的吸引表面的电位;以及控制装置，其通过电位测量装置进行电位测量，其中， 样品被静电吸盘（105）吸引。

    ALIGNING A FEATURELESS THIN FILM IN A TEM
    47.
    发明申请
    ALIGNING A FEATURELESS THIN FILM IN A TEM 有权
    在TEM中标记一个无特征薄膜

    公开(公告)号：US20160104596A1

    公开(公告)日：2016-04-14

    申请号：US14878513

    申请日：2015-10-08

    Applicant: FEI Company

    Inventor： Bart Buijsse ,  Gijs van Duinen

    IPC: H01J37/02 ,  H01J37/153 ,  H01J37/26

    CPC classification number: H01J37/023 ,  H01J37/153 ,  H01J37/26 ,  H01J37/261 ,  H01J2237/024 ,  H01J2237/1532 ,  H01J2237/1534 ,  H01J2237/2602 ,  H01J2237/2614

    Abstract: When preparing a Hole-Free Phase Plates (HFPP) a preferably featureless thin film should be placed with high accuracy in the diffraction plane of the TEM, or a plane conjugate to it. Two methods for accurately placing the thin film in said plane are described. One method uses a Ronchigram of the thin film while the TEM is in imaging mode, and the magnification of the Ronchigram is tuned so that the magnification in the middle of the Ronchigram is infinite. The second method uses electrons scattered by the thin film while the TEM is in diffraction mode. When the thin film does not coincide with the diffraction plane, electrons scattered by the thin film seem to originate from another location than the cross-over of the zero beam. This is observed as a halo. The absence of the halo is proof that the thin film coincides with the diffraction plane.

    Abstract translation: 当准备无孔相板（HFPP）时，应该在TEM的衍射平面或与其共轭的平面上以高精度放置优选无特征薄膜。 描述了将薄膜准确地放置在所述平面中的两种方法。 当TEM处于成像模式时，一种方法使用薄膜的Ronchigram，并且调整Ronchigram的放大倍率，使得Ronchigram中间的放大倍率是无穷大的。 第二种方法是在TEM处于衍射模式时使用由薄膜散射的电子。 当薄膜与衍射平面不一致时，由薄膜散射的电子似乎源自与零光束交叉的另一位置。 这被观察为光环。 光晕的不存在证明薄膜与衍射平面重合。

    Mask cover, charged particle beam drawing apparatus and charged particle beam drawing method
    48.
    发明授权
    Mask cover, charged particle beam drawing apparatus and charged particle beam drawing method 有权
    掩模罩，带电粒子束拉制装置和带电粒子束拉制法

    公开(公告)号：US09299531B2

    公开(公告)日：2016-03-29

    申请号：US14257641

    申请日：2014-04-21

    Applicant: NUFLARE TECHNOLOGY, INC.

    Inventor： Yu Asami ,  Michihiro Kawaguchi

    IPC: G01N21/00 ,  H01J37/02 ,  H01J37/317 ,  H01J37/30

    CPC classification number: H01J37/026 ,  H01J37/3002 ,  H01J37/3174 ,  H01J2237/31788

    Abstract: A mask cover according to one embodiment of the present invention comprises a frame body having an opening at the center, a conductive earth plate installed on the frame body such that its end protrudes into the opening of the frame body, an earth pin provided on the end of the earth plate and electrically connected to the earth plate, and a conductive cover part surrounding the earth pin such that the tip end of the earth pin protrudes and a gap is present between the cover part and the earth pin.

    Abstract translation: 根据本发明的一个实施例的掩模罩包括：在中心具有开口的框架体，安装在框架体上的导电接地板，使其端部突出到框体的开口中， 接地板的端部并且电连接到接地板，以及围绕接地引脚的导电覆盖部分，使得接地引脚的尖端突出并且在盖部分和接地引脚之间存在间隙。

    Uniformity Control using Adjustable Internal Antennas
    49.
    发明申请
    Uniformity Control using Adjustable Internal Antennas 有权
    使用可调内部天线的均匀性控制

    公开(公告)号：US20160079042A1

    公开(公告)日：2016-03-17

    申请号：US14484018

    申请日：2014-09-11

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Alexandre Likhanskii ,  Svetlana B. Radovanov

    IPC: H01J37/32 ,  H01J37/02

    CPC classification number: H01J37/023 ,  H01J37/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H01J2237/061 ,  H01J2237/0817

    Abstract: A plasma chamber having improved plasma density is disclosed. The plasma chamber utilizes internal antennas. These internal antennas can be manipulated in a variety of ways to control the uniformity of the plasma density. In some embodiments, the conductive coil within the antenna is translated from a first location to a second location. For example, the entirety of the internal antennas may be translated within the plasma chamber. In another embodiment, the conductive coil disposed within the outer tube is translated relative to its outer tube. In another embodiment, the conductive coil within the outer tube may be bent and may be rotated within the outer tube. In another embodiment, the outer tube may also be bent and rotated. In other embodiments, ferromagnetic segments may be disposed in the outer tube to focus or block the electromagnetic energy emitted from the conductive coil.

    Abstract translation: 公开了一种具有改善的等离子体密度的等离子体室。 等离子体室采用内部天线。 可以以各种方式操纵这些内部天线以控制等离子体密度的均匀性。 在一些实施例中，天线内的导电线圈从第一位置转换到第二位置。 例如，整个内部天线可以在等离子体室内平移。 在另一个实施例中，设置在外管内的导电线圈相对于其外管平移。 在另一个实施例中，外管内的导电线圈可以被弯曲并且可以在外管内旋转。 在另一个实施例中，外管也可以被弯曲和旋转。 在其他实施例中，铁磁段可以设置在外管中以聚焦或阻挡从导电线圈发射的电磁能。

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