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    METHOD AND APPARATUS FOR LASER-BEAM PROCESSING AND METHOD FOR MANUFACTURING INK JET HEAD
    51.
    发明申请
    METHOD AND APPARATUS FOR LASER-BEAM PROCESSING AND METHOD FOR MANUFACTURING INK JET HEAD 审中-公开
    激光加工的方法和装置及制造喷墨头的方法

    公开(公告)号：US20140245608A1

    公开(公告)日：2014-09-04

    申请号：US14349477

    申请日：2012-10-03

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Hiroyuki Morimoto ,  Kosuke Kurachi

    IPC: B23K26/36 ,  B23K26/40 ,  B41J2/16 ,  B23K26/12

    CPC classification number: B41J2/16 ,  B23K26/0622 ,  B23K26/1224 ,  B23K26/361 ,  B23K26/40 ,  B23K26/60 ,  B23K2103/50 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1634 ,  B81C1/00515 ,  B81C2201/0143 ,  Y10T29/49401

    Abstract: In removal processing using a pulsed laser beam, processing deviation occurs in the depthwise direction to cause a processing error in a predetermined removal shape.A first pulsed laser beam L1 is a pulsed laser beam having a wavelength that exhibits transmittance to a workpiece 6, and a second pulsed laser beam L2 is a pulsed laser beam having a wavelength that exhibits absorption to the workpiece 6. The first pulsed laser beam L1 is focused into the workpiece 6, and a focal point P1 of the first pulsed laser beam L1 is scanned along the outline of a predetermined removal region R1 to form a modified portion 6A along the outline of the predetermined removal region R1. Next, removal processing is performed by scanning the second pulsed laser beam L2 in a region enclosed by the modified portion 6A.

    Abstract translation: 在使用脉冲激光束的去除处理中，在深度方向发生处理偏差，导致预定的去除形状的处理误差。 第一脉冲激光束L1是具有对工件6具有透射率的波长的脉冲激光束，第二脉冲激光束L2是具有对工件6具有吸收的波长的脉冲激光束。第一脉冲激光束 L1被聚焦到工件6中，并且沿着预定去除区域R1的轮廓扫描第一脉冲激光束L1的焦点P1，以沿着预定去除区域R1的轮廓形成修改部分6A。 接下来，通过在由修改部分6A包围的区域中扫描第二脉冲激光束L2来执行去除处理。

    Electron beam processing with condensed ice
    52.
    发明授权
    Electron beam processing with condensed ice 有权
    用冷凝冰进行电子束加工

    公开(公告)号：US08790863B2

    公开(公告)日：2014-07-29

    申请号：US13881504

    申请日：2011-10-26

    Applicant: Daniel Branton ,  Anpan Han ,  Jene A. Golovchenko

    Inventor： Daniel Branton ,  Anpan Han ,  Jene A. Golovchenko

    IPC: G03F7/38 ,  B82B3/00 ,  G03F7/16

    CPC classification number: G03F7/2059 ,  B81C1/00531 ,  B81C2201/0143 ,  B81C2201/0159 ,  B82Y10/00 ,  B82Y40/00 ,  G01N23/2251 ,  H01J37/3174 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/2002 ,  H01J2237/2803 ,  H01J2237/2809 ,  H01J2237/31796 ,  H01L21/0331 ,  H01L22/12 ,  H01L51/0014 ,  H01L51/0048

    Abstract: In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the substrate surface through the water condensate layer. The water condensate layer integrity is maintained during electron beam scanning to prevent electron-beam contamination from reaching the substrate during electron beam scanning. Then one or more regions of the layer can be locally removed by directing an electron beam at the regions. A material layer can be deposited on top of the water condensate layer and any substrate surface exposed at the one or more regions, and the water condensate layer and regions of the material layer on top of the layer can be removed, leaving a patterned material layer on the substrate.

    Abstract translation: 在固态基板成像方法中，将蒸气冷凝成固态基板表面的无定形固体水凝结物层。 然后通过沿着衬底表面扫描电子束通过水凝结层产生衬底表面的至少一部分的图像。 在电子束扫描期间维持水凝结层的完整性，以防止电子束扫描期间电子束污染到达衬底。 然后可以通过在该区域处引导电子束来局部地去除该层的一个或多个区域。 材料层可以沉积在水冷凝物层的顶部和在一个或多个区域暴露的任何基底表面，并且水凝结物层和该层顶部上的材料层的区域可以被去除，留下图案化的材料层 在基板上。

    Laser processing method
    53.
    发明授权
    Laser processing method 有权
    激光加工方法

    公开(公告)号：US08673167B2

    公开(公告)日：2014-03-18

    申请号：US13361079

    申请日：2012-01-30

    Applicant: Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

    Inventor： Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

    IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC classification number: H01L23/481 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2103/50 ,  B81B2203/0353 ,  B81B2203/0384 ,  B81C1/00087 ,  B81C2201/0143 ,  H01L21/30608 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

    Abstract: A laser processing method for forming a hole in a sheet-like object to be processed made of silicon comprises a depression forming step of forming a depression in a part corresponding to the hole on a laser light entrance surface side of the object, the depression opening to the laser light entrance surface; a modified region forming step of forming a modified region along a part corresponding to the hole in the object by converging a laser light at the object after the depression forming step; and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the hole in the object; wherein the modified region forming step exposes the modified region or a fracture extending from the modified region to an inner face of the depression.

    Abstract translation: 在由硅制成的待加工的片状物体中形成孔的激光加工方法包括凹陷形成步骤，在与物体的激光入射面侧的孔对应的部分形成凹部，凹部开口 到激光入射面; 改变区域形成步骤，通过在所述凹陷形成步骤之后会聚所述物体上的激光，沿着与所述物体中的所述孔相对应的部分形成改质区域; 以及在改质区域形成工序后对物体进行各向异性蚀刻的蚀刻工序，以沿着改质区域选择性地进行蚀刻，并在物体上形成孔; 其中所述改性区域形成步骤将所述改性区域或从所述改质区域延伸的断裂暴露于所述凹陷的内表面。

    METHOD OF MANUFACTURING BASE BODY HAVING MICROSCOPIC HOLE, AND BASE BODY
    55.
    发明申请
    METHOD OF MANUFACTURING BASE BODY HAVING MICROSCOPIC HOLE, AND BASE BODY 审中-公开
    具有微孔孔和基体的制备基体的方法

    公开(公告)号：US20130309445A1

    公开(公告)日：2013-11-21

    申请号：US13952141

    申请日：2013-07-26

    Applicant: The University Of Tokyo ,  Fujikura Ltd.

    Inventor： Osamu NUKAGA ,  Satoshi YAMAMOTO ,  Kazuhito TABATA ,  Masakazu SUGIYAMA

    IPC: B32B3/26 ,  B81C1/00

    CPC classification number: B81C1/00547 ,  B23K26/50 ,  B32B3/266 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0353 ,  B81C1/00507 ,  B81C2201/013 ,  B81C2201/0143 ,  C03C15/00 ,  C03C23/0025 ,  Y10T428/24273

    Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.

    Abstract translation: 一种制造具有微小孔的基体的方法，包括：通过用具有脉冲持续时间的第一激光的焦点在基体上扫描来形成第一改质区域和第二改质区域中的至少一个 皮秒或更少; 通过用脉冲持续时间为皮秒或更小的第二激光的焦点扫描基体的内部，形成由多个第三改质区域和第四改质区域形成的周期性修饰基团; 获得形成为使得第一改质区域和第二改质区域与改性基团重叠或接触的基体; 并通过蚀刻去除第一改质区和第三改质区而形成微孔。

    Electron Beam Processing With Condensed Ice
    56.
    发明申请
    Electron Beam Processing With Condensed Ice 有权
    冷凝电子束加工

    公开(公告)号：US20130288182A1

    公开(公告)日：2013-10-31

    申请号：US13881504

    申请日：2011-10-26

    Applicant: Daniel Branton ,  Anpan Han ,  Jene A. Golovchenko

    Inventor： Daniel Branton ,  Anpan Han ,  Jene A. Golovchenko

    IPC: G03F7/20

    CPC classification number: G03F7/2059 ,  B81C1/00531 ,  B81C2201/0143 ,  B81C2201/0159 ,  B82Y10/00 ,  B82Y40/00 ,  G01N23/2251 ,  H01J37/3174 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/2002 ,  H01J2237/2803 ,  H01J2237/2809 ,  H01J2237/31796 ,  H01L21/0331 ,  H01L22/12 ,  H01L51/0014 ,  H01L51/0048

    Abstract: In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the substrate surface through the water condensate layer. The water condensate layer integrity is maintained during electron beam scanning to prevent electron-beam contamination from reaching the substrate during electron beam scanning. Then one or more regions of the layer can be locally removed by directing an electron beam at the regions. A material layer can be deposited on top of the water condensate layer and any substrate surface exposed at the one or more regions, and the water condensate layer and regions of the material layer on top of the layer can be removed, leaving a patterned material layer on the substrate.

    Abstract translation: 在固态基板成像方法中，将蒸气冷凝成固态基板表面的无定形固体水凝结物层。 然后通过沿着衬底表面扫描电子束通过水凝结层产生衬底表面的至少一部分的图像。 在电子束扫描期间维持水凝结层的完整性，以防止电子束扫描期间电子束污染到达衬底。 然后可以通过在该区域处引导电子束来局部地去除该层的一个或多个区域。 材料层可以沉积在水冷凝物层的顶部和在一个或多个区域暴露的任何基底表面，并且水凝结物层和该层顶部上的材料层的区域可以被去除，留下图案化的材料层 在基板上。

    High Resolution Plasma Etch
    57.
    发明申请
    High Resolution Plasma Etch 审中-公开
    高分辨率等离子体蚀刻

    公开(公告)号：US20130192758A1

    公开(公告)日：2013-08-01

    申请号：US13669195

    申请日：2012-11-05

    Applicant: FEI Company

    Inventor： Milos Toth ,  Noel Smith

    IPC: B05C21/00

    CPC classification number: B05C21/005 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01J2237/31749

    Abstract: An apparatus for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

    Abstract translation: 一种用于制造微观结构的装置，其使用诸如光束诱导的前体分解的光束过程，以精确图案沉积掩模，然后选择性等离子体束，包括以下步骤：首先创建保护掩模 使用诸如电子束，聚焦离子束（FIB）或激光工艺的光束过程在衬底的表面部分上，并且其次使用选择性等离子体束蚀刻工艺来蚀刻未掩模的衬底部分。 可选地，包括去除保护掩模的第三步骤可以用第二种，实质上相对地选择的等离子体束工艺进行。

    PLATFORM WITH ASPHERICAL MEMBRANE BED, PRESSURE SENSOR WITH SUCH A PLATFORM AND METHOD FOR THEIR MANUFACTURE
    58.
    发明申请
    PLATFORM WITH ASPHERICAL MEMBRANE BED, PRESSURE SENSOR WITH SUCH A PLATFORM AND METHOD FOR THEIR MANUFACTURE 审中-公开
    带平面膜的平台，具有这种平台的压力传感器及其制造方法

    公开(公告)号：US20130047738A1

    公开(公告)日：2013-02-28

    申请号：US13696453

    申请日：2011-04-14

    Applicant: Anh Tuan Tham ,  Dieter Stolze ,  Rafael Teipen

    Inventor： Anh Tuan Tham ,  Dieter Stolze ,  Rafael Teipen

    IPC: B81C1/00 ,  C01B33/02 ,  G01L9/00

    CPC classification number: G01L19/0618 ,  B81C1/00103 ,  B81C2201/0143 ,  G01L7/082 ,  Y10T428/24479

    Abstract: A method for the manufacture of a platform having a membrane bed includes providing a platform body, which comprises silicon; and removing silicon material from a surface of the platform body by means of laser ablation. Preferably, this is followed by oxidizing the ablated surface and then etching the oxidized surface. In an example of the invention, a resulting pressure sensor comprises two platforms, each with a membrane bed having a contour for supporting a measuring membrane, wherein the contour essentially corresponds to a bend line of the measuring membrane.

    Abstract translation: 一种用于制造具有膜床的平台的方法，包括提供包括硅的平台体; 以及通过激光烧蚀从平台体的表面去除硅材料。 优选地，随后氧化烧蚀表面，然后蚀刻氧化表面。 在本发明的一个实例中，所得到的压力传感器包括两个平台，每个平台具有用于支撑测量膜的轮廓的膜床，其中轮廓基本上对应于测量膜的弯曲线。

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