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    Multi-Layer Encapsulated Structures
    56.
    发明申请
    Multi-Layer Encapsulated Structures 有权
    多层封装结构

    公开(公告)号：US20140004374A1

    公开(公告)日：2014-01-02

    申请号：US14017510

    申请日：2013-09-04

    Applicant: Microfabrica Inc.

    Inventor： Adam L. Cohen

    IPC: C25D1/00 ,  C25D5/02

    CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

    Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

    Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。 还公开了电镀制品和电镀装置。

    Method of manufacturing semiconductor device
    57.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US08617970B2

    公开(公告)日：2013-12-31

    申请号：US13582134

    申请日：2011-02-23

    Applicant: Makoto Koto

    Inventor： Makoto Koto

    IPC: H01L21/20

    CPC classification number: H01L21/0262 ,  B81B2203/0361 ,  B81C1/00095 ,  B81C2201/0181 ,  B82Y10/00 ,  B82Y40/00 ,  G01N27/4146 ,  G01N27/4148 ,  H01L21/02373 ,  H01L21/02521 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0676

    Abstract: The present invention relates to a method of manufacturing a semiconductor device by which the length of nanowires perpendicularly formed can be fabricated with high reproducibility. The method of manufacturing a semiconductor device includes the steps of forming a first layer; forming a stop layer on the first layer, the stop layer having a higher Young's modulus than the first layer; forming a recess by partially removing the first layer and the stop layer; growing nanowires in the recess; forming a planarizing layer; removing the planarizing layer to the level of the stop layer to expose the nanowires from the surface of the planarizing layer; and forming an electrode so as to be in contact with the upper ends of the nanowires.

    Abstract translation: 本发明涉及一种制造半导体器件的方法，通过该方法可以以高再现性制造垂直形成的纳米线的长度。 制造半导体器件的方法包括形成第一层的步骤; 在所述第一层上形成停止层，所述停止层具有比所述第一层更高的杨氏模量; 通过部分去除第一层和止挡层形成凹部; 在休息中增长纳米线; 形成平坦化层; 将所述平坦化层去除到所述停止层的水平面以从所述平坦化层的表面露出所述纳米线; 并形成与纳米线的上端接触的电极。

    Method for Electrochemical Fabrication
    59.
    发明申请
    Method for Electrochemical Fabrication 审中-公开
    电化学加工方法

    公开(公告)号：US20120234688A1

    公开(公告)日：2012-09-20

    申请号：US13441136

    申请日：2012-04-06

    Applicant: Adam L. Cohen

    Inventor： Adam L. Cohen

    IPC: C25D5/02 ,  C25D5/48

    CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

    Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

    Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。 还公开了电镀制品和电镀装置。

    SWITCH AND METHOD FOR MANUFACTURING THE SAME, AND RELAY
    60.
    发明申请
    SWITCH AND METHOD FOR MANUFACTURING THE SAME, AND RELAY 审中-公开
    开关及其制造方法和继电器

    公开(公告)号：US20110209970A1

    公开(公告)日：2011-09-01

    申请号：US13029898

    申请日：2011-02-17

    Applicant: Takahiro Masuda ,  Naoki Yoshitake ,  Kenichi Hinuma ,  Junya Yamamoto ,  Takashi Fujisawa ,  Takeshi Fujiwara

    Inventor： Takahiro Masuda ,  Naoki Yoshitake ,  Kenichi Hinuma ,  Junya Yamamoto ,  Takashi Fujisawa ,  Takeshi Fujiwara

    IPC: H01H59/00 ,  H01H11/00

    CPC classification number: H01H1/06 ,  B81B2201/014 ,  B81C1/00166 ,  B81C2201/0177 ,  B81C2201/0181 ,  B81C2201/0184 ,  H01H1/0036 ,  H01H2001/0052 ,  Y10T29/49105

    Abstract: A switch and a relay include a contact with a smooth contacting surface. A side surface of a fixed contact faces a side surface of a movable contact. The fixed contact has an insulating layer and a base layer stacked on a fixed contact substrate, and a first conductive layer formed thereon through electrolytic plating. The side surface of the first conductive layer that faces the movable contact becomes the fixed contact (contacting surface). The movable contact has an insulating layer and a base layer stacked on the movable contact substrate, and a movable contact formed thereon through electrolytic plating. A side surface of a second conductive layer that faces the fixed contact becomes the movable contact (contacting surface). The fixed contact and the movable contact have surfaces that contact the side surfaces of the mold portion when growing the first and second conductive layers through electrolytic plating.

    Abstract translation: 开关和继电器包括具有光滑接触表面的触点。 固定触点的侧表面面对活动触点的侧表面。 固定触点具有层叠在固定接触基板上的绝缘层和基层，以及通过电解电镀形成在其上的第一导电层。 第一导电层的面对可动触点的侧表面成为固定触点（接触面）。 可动触头具有堆叠在可动触点基板上的绝缘层和基极层，以及通过电解电镀形成的可动触点。 面对固定触点的第二导电层的侧表面成为可动触头（接触面）。 固定触点和可动触点具有通过电解电镀生长第一和第二导电层时与模具部分的侧表面接触的表面。

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