中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

292 records (took 0.016 seconds)

    Microbridge structure and method for forming a microstructure suspended by a micro support
    51.
    发明授权
    Microbridge structure and method for forming a microstructure suspended by a micro support 失效
    用于形成由微型载体悬挂的微结构的微桥结构和方法

    公开(公告)号：US6130109A

    公开(公告)日：2000-10-10

    申请号：US966311

    申请日：1997-11-07

    Applicant: Hubert Jerominek ,  Martin Renaud ,  Nicholas R. Swart

    Inventor： Hubert Jerominek ,  Martin Renaud ,  Nicholas R. Swart

    IPC: B81B3/00 ,  G01J5/20 ,  H01L21/00

    CPC classification number: B81C1/00142 ,  G01J5/20 ,  B81B2203/0315 ,  B81C2201/053

    Abstract: The microbridge structure comprises a substrate layer provided with two first electrical contacts, a microstructure provided with two second electrical contacts, and a micro support for suspending the microstructure over and at a predetermined distance from the substrate layer. The micro support extends along a vertical axis. The micro support has a central upper cavity extending along the vertical axis within the micro support. The micro support has a lower end connected to the substrate layer and an upper end connected to the microstructure for supporting the microstructure with respect to the substrate layer. The micro support is a multilayer micro support comprising two conductive paths and a layer made of dielectric material. The conductive paths and the layer of the micro support extend from the upper end to the lower end thereof. The two conductive paths connect respectively the two first contacts to the two second contacts. The present invention is also concerned with a method for forming a microstructure suspended by a micro support.

    Abstract translation: 微桥结构包括设置有两个第一电触点的基底层，设置有两个第二电触点的微结构，以及用于将微结构悬置在基底层上方且距离基底层预定距离的微支撑。 微支架沿垂直轴线延伸。 微支架具有在微支架内沿着垂直轴延伸的中心上腔。 微支撑件具有连接到基底层的下端，并且连接到微结构的上端相对于基底层支撑微结构。 微载体是包含两个导电路径和由电介质材料制成的层的多层微载体。 导电路径和微支架的层从其上端延伸到下端。 两个导电路径将两个第一触点分别连接到两个第二触点。 本发明还涉及一种形成由微型载体悬挂的微结构的方法。

    Method for producing an acceleration sensor
    52.
    发明授权
    Method for producing an acceleration sensor 失效
    加速度传感器的制造方法

    公开(公告)号：US5525549A

    公开(公告)日：1996-06-11

    申请号：US49801

    申请日：1993-04-21

    Applicant: Tsuyoshi Fukada ,  Yoshimi Yoshino ,  Yukihiko Tanizawa

    Inventor： Tsuyoshi Fukada ,  Yoshimi Yoshino ,  Yukihiko Tanizawa

    IPC: B81B3/00 ,  G01L9/00 ,  G01P15/08 ,  G01P15/12 ,  H01L21/3063 ,  H01L21/78 ,  H01L21/64

    CPC classification number: B81C1/00888 ,  B81C1/00158 ,  G01L9/0055 ,  G01P15/0802 ,  G01P15/123 ,  H01L21/3063 ,  H01L21/78 ,  B81B2201/0235 ,  B81C2201/0114 ,  B81C2201/053 ,  Y10S148/028 ,  Y10S148/159 ,  Y10S438/977

    Abstract: A method for producing a semiconductor device that is capable of solving problems related to dicing a metal thin film used for electrochemical etching. According to the method, an n type epitaxial thin layer is formed on a p type single-crystal silicon wafer. An n.sup.+ type diffusion layer is formed in a scribe line area on the epitaxial layer. An n.sup.+ type diffusion layer is formed in an area of the epitaxial layer which corresponds to a predetermined portion of the wafer. An aluminum film is formed over the diffusion layers. The aluminum film has a clearance for passing a dicing blade. Portions of the wafer are electrochemically etched by supplying electricity through the aluminum film and the diffusion layers, to leave portions of the epitaxial layer. The wafer is diced into chips along the scribe line area. Each of the chips forms a separate semiconductor device. The electrochemical etching of the wafer is carried out after the formation of the aluminum film by immersing the wafer in a KOH aqueous solution and by supplying electricity through the aluminum film. The electrochemical etching is terminated at an inflection point where an etching current inflects to a constant level from a peak level. During the electrochemical etching, the diffusion layer reduces horizontal resistance in the epitaxial layer, so that the etched parts receive a sufficient potential to perform the etching.

    Abstract translation: 一种能够解决与用于电化学蚀刻的金属薄膜切割相关的问题的半导体器件的制造方法。 根据该方法，在p型单晶硅晶片上形成n型外延薄层。 在外延层上的划线区域中形成n +型扩散层。 在对应于晶片的预定部分的外延层的区域中形成n +型扩散层。 在扩散层上形成铝膜。 铝膜具有用于通过切割刀片的间隙。 通过供电通过铝膜和扩散层对晶片的一部分进行电化学蚀刻，以留下外延层的部分。 晶片沿着划线区切成芯片。 每个芯片形成单独的半导体器件。 通过将晶片浸入KOH水溶液中并通过铝膜供电，在形成铝膜之后进行晶片的电化学蚀刻。 在蚀刻电流从峰值水平变为恒定水平的拐点处终止电化学蚀刻。 在电化学蚀刻期间，扩散层减小外延层中的水平电阻，使得蚀刻部分具有足够的电位进行蚀刻。

    PRESSURE SENSING MODULE AND MANUFACTURING METHOD THEREOF
    53.
    发明公开
    PRESSURE SENSING MODULE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20240327205A1

    公开(公告)日：2024-10-03

    申请号：US18614740

    申请日：2024-03-25

    Applicant: Coretronic MEMS Corporation

    Inventor： Mei-Ling Chen ,  Tsung-Heng Wu

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00182 ,  B81B3/0021 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/115 ,  B81C2201/0132 ,  B81C2201/053

    Abstract: A pressure sensing module includes a substrate and a sensing layer. The substrate has a first surface and a second surface opposite to each other. The substrate includes a stepped cavity and an opening. The stepped cavity extends from the first surface to the second surface, the opening extends from the second surface to the first surface, and the stepped cavity communicates with the opening. The sensing layer is disposed on the first surface of the substrate and covers the first surface of the substrate. The sensing layer includes at least one sensing element and a cross-shaped structure. The cross-shaped structure includes a central portion and a plurality of extending portions connecting the central portion. The central portion and the extending portions respectively include at least one hollow portion. An orthographic projection of the central portion of the cross-shaped structure on the substrate overlaps with the opening of the substrate.

Patent Agency Ranking