公开(公告)号：US06274881B1

公开(公告)日：2001-08-14

申请号：US09297210

申请日：1999-06-17

Applicant: Koji Akiyama ,  Hideo Kurokawa

Inventor： Koji Akiyama ,  Hideo Kurokawa

IPC: H01L2906

CPC classification number: H01J1/304 ,  H01J1/308 ,  H01J2329/00

Abstract: In an electron emission element having an emitter section for emitting electrons, the emitter section includes, on a first conductive electrode, a structure in which at least a first semiconductor layer, a second semiconductor layer, an insulating layer and a second conductive electrode are deposited sequentially; and the first and second semiconductor layers include at least one of carbon, silicon and germanium as a main component, and the first semiconductor layer includes at least one type of atoms among carbon atom, oxygen atoms and nitrogen atoms which is different from the main component.

Abstract translation: 在具有用于发射电子的发射极部分的电子发射元件中，发射极部分在第一导电电极上包括其中沉积至少第一半导体层，第二半导体层，绝缘层和第二导电电极的结构 顺序地 并且第一和第二半导体层包括碳，硅和锗中的至少一种作为主要成分，并且第一半导体层包括与主要成分不同的碳原子，氧原子和氮原子中的至少一种原子 。

公开(公告)号：US6140664A

公开(公告)日：2000-10-31

申请号：US408088

申请日：1995-03-21

Applicant: Evert Seevinck ,  Tjerk G. Spanjer

Inventor： Evert Seevinck ,  Tjerk G. Spanjer

IPC: H01J1/308 ,  H01J1/30 ,  H01J29/04 ,  H01J29/50 ,  H01L29/12

CPC classification number: H01J1/308 ,  H01J29/04 ,  H01J2201/319

Abstract: To prevent breakdown of an insulating layer located underneath a gate electrode, the gate electrode is connected to an external terminal via a high-ohmic resistor. The high-ohmic resistor may form part of a resistive network for biasing voltages for a plurality of gate electrodes. The resistive network may be realised partly on the insulating layer.

Abstract translation: 为了防止位于栅电极下方的绝缘层的击穿，栅电极通过高欧姆电阻连接到外部端子。 高欧姆电阻可以形成用于多个栅电极的偏置电压的电阻网络的一部分。 电阻网络可以部分地实现在绝缘层上。

公开(公告)号：US6084340A

公开(公告)日：2000-07-04

申请号：US253082

申请日：1999-02-19

Applicant: Peter Bachmann ,  Detlef Wiechert ,  Klaus Rademacher ,  Howard Wilson

Inventor： Peter Bachmann ,  Detlef Wiechert ,  Klaus Rademacher ,  Howard Wilson

IPC: H01J1/30 ,  H01J1/308 ,  H01J1/05 ,  H01J1/02 ,  H01J1/16 ,  H01J63/04

CPC classification number: H01J1/308 ,  H01J2201/30457

Abstract: In an electron-emitting component with a cold cathode comprising a substrate and a cover layer with a diamond-containing material consisting of nano-crystalline diamond having a Raman spectrum with three lines, i.e. at K=1334.+-.4 cm.sup.-1 with a half-width value of 12.+-.6 cm.sup.-1, at K=1140.+-.20 cm.sup.-1 and at K=1470.+-.20 cm.sup.-1, the cold cathode exhibits a low extraction field strength, a stable emission at pressures below 10.sup.-4 mbar, a steep current-voltage characteristic and stable emission currents in excess of 1 microampere/mm.sup.2. The electron emission of the component demonstrates a long-time stability, and a constant intensity of the electron beam across its cross-section.

Abstract translation: 在具有冷阴极的电子发射部件中，包括基底和具有含金刚石材料的覆盖层，所述金刚石材料由具有三条线的拉曼光谱的纳米晶体金刚石组成，即在K = 1334 +/- 4cm -1处， 在K = 1140 +/- 20cm -1处，在K = 1470 +/- 20cm -1处的半值宽度为12 +/- 6cm -1，冷阴极表现出较低的提取场强， 在低于10-4毫巴的压力下稳定发射，电流电压特性曲线陡峭，发射电流稳定在1微安/毫米2以上。 元件的电子发射表现出长时间的稳定性，电子束横截面的恒定强度。

公开(公告)号：US6014118A

公开(公告)日：2000-01-11

申请号：US906641

申请日：1997-08-07

Applicant: Jon K. Edwards ,  Constantine N. Anagnostopoulos

Inventor： Jon K. Edwards ,  Constantine N. Anagnostopoulos

IPC: B41J2/44 ,  G06K15/12 ,  G09G3/20 ,  G09G3/22 ,  H01J1/308 ,  H01J31/12 ,  H04N1/036

CPC classification number: H01J31/12 ,  G06K15/1238 ,  G09G3/22 ,  H01J1/308 ,  G09G3/20

Abstract: Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, combines semiconductor charge-coupled devices for receiving the charges, associated small-scale field emission arrays for converting the charges to imagewise pattern of electron emissions, an electron multiplier for intensifying the electron emissions, and a luminescent phosphor layer susceptible to light output according to the impact of the intensified electron emission. The light output may be directed onto a photosensitive image recording medium to provide for image recording. Second and third embodiments of the contemplated image source provide light output that forms an image to be viewed directly.

Abstract translation: 用于将以串行电荷的形式的图像数据转换为高分辨率成像光图案的图像源组合用于接收电荷的半导体电荷耦合器件，用于将电荷转换成电子发射的成像模式的相关联的小尺度场发射阵列 ，用于增强电子发射的电子倍增器，以及根据强化的电子发射的影响对光输出敏感的发光荧光体层。 光输出可以被引导到感光图像记录介质上以提供图像记录。 预期图像源的第二和第三实施例提供形成要直接观看的图像的光输出。

公开(公告)号：US5710478A

公开(公告)日：1998-01-20

申请号：US698260

申请日：1996-08-14

Applicant: Seigo Kanemaru ,  Junji Itoh

Inventor： Seigo Kanemaru ,  Junji Itoh

IPC: H01J1/304 ,  H01J1/308 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J1/308 ,  H01J2201/319

Abstract: A field emission device of simple structure enables stabilization and control of field emission current. A three-dimensional emitter formed on a base member incorporates therein a source layer on the side in contact with the base member, a drain layer on the side of the distal end including a tip and a channel region layer between the source layer and the drain layer. A gate is formed near the emitter. A strong electric field generated by applying a voltage to the gate causes cold electrons to be emitted from the emitter tip and the voltage applied to the gate also controls the conductivity of the channel region layer, whereby the field emission current emitted from the tip of the emitter is stabilized and controlled.

Abstract translation: 具有简单结构的场致发射器件可实现场发射电流的稳定和控制。 形成在基底构件上的三维发射体在其中包括与基底构件接触的一侧的源极层，在远端侧的漏极层包括尖端和在源极层和漏极之间的沟道区域层 层。 在发射极附近形成栅极。 通过向栅极施加电压产生的强电场使得发射极尖端发出冷电子，并且施加到栅极的电压也控制沟道区域层的导电性，从而从 发射极稳定并受到控制。

公开(公告)号：US5604355A

公开(公告)日：1997-02-18

申请号：US442565

申请日：1995-05-16

Applicant: Tom Van Zutphen

Inventor： Tom Van Zutphen

IPC: H01J1/304 ,  H01J1/308 ,  H01J29/04

CPC classification number: H01J29/04 ,  H01J1/308

Abstract: By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structures (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant to damage during manufacture and use of a vacuum tube. The semiconductor zones (26, 27, 32, 33) are thus also utilized for realizing electron optics (particle optics).

Abstract translation: 通过提供具有额外的齐纳或雪崩结构（分别为26,27和32,33）的冷阴极（7）的半导体器件，获得了坚固的结构，其在真空管的制造和使用期间耐受损坏。 因此，半导体区域（26,27,32,33）也用于实现电子光学（粒子光学）。

公开(公告)号：US5442192A

公开(公告)日：1995-08-15

申请号：US187258

申请日：1994-01-27

Applicant: Herbert Goronkin ,  Lawrence N. Dworsky

Inventor： Herbert Goronkin ,  Lawrence N. Dworsky

IPC: H01J1/308 ,  H01L27/14 ,  H01L29/161

CPC classification number: H01J1/308

Abstract: A heterostructure electron emitter including a substrate having a surface with a predetermined potential barrier and a quantum well formed in the substrate adjacent the surface. Contacts are positioned on the substrate for coupling free electrons to the substrate and into the quantum well. An acoustic wave device is positioned on the substrate so as to direct acoustic waves to strike the free electrons in the quantum well and excite the free electrons sufficiently to cause the free electrons to overcome the potential barrier and to be emitted from the surface of the substrate.

Abstract translation: 异质结构电子发射体包括具有预定势垒的表面的衬底和与衬底相邻的表面形成的量子阱。 触点位于衬底上，用于将自由电子耦合到衬底并进入量子阱。 声波器件位于衬底上，以引导声波冲击量子阱中的自由电子，并充分激发自由电子，使自由电子克服势垒并从衬底的表面发射 。

公开(公告)号：US5233196A

公开(公告)日：1993-08-03

申请号：US764772

申请日：1991-09-24

Applicant: Masahiko Okunuki ,  Haruhito Ono

Inventor： Masahiko Okunuki ,  Haruhito Ono

IPC: H01J1/312 ,  H01J1/308 ,  H01J3/18 ,  H01J37/063 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01L21/30

CPC classification number: H01J37/063 ,  H01J1/308 ,  H01J2201/319 ,  H01J2237/062 ,  H01J2237/06325 ,  H01J2237/1202

Abstract: An electron beam apparatus for applying an electron beam from an electron source onto a target plane is characterized by comprising one sheet of electrode disposed between said electron source for emitting the electron beam in parallel or substantially parallel and a target arrangement position, and a power source for supplying a desired voltage to said electrode.

Abstract translation: 用于将来自电子源的电子束施加到目标平面上的电子束装置的特征在于包括设置在所述电子源之间的一片电极，用于平行或基本平行地发射电子束和目标布置位置，以及电源 用于向所述电极提供所需的电压。

公开(公告)号：US4994708A

公开(公告)日：1991-02-19

申请号：US515352

申请日：1990-04-30

Applicant: Akira Shimizu ,  Takeo Tsukamoto ,  Akira Suzuki ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

Inventor： Akira Shimizu ,  Takeo Tsukamoto ,  Akira Suzuki ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

IPC: H01J1/308 ,  H01J21/10

CPC classification number: H01J1/308 ,  H01J21/105

Abstract: A cold cathode device wherein a cold cathode and an anode face each other with an electron transit path intermediated therebetween, and one or more control electrodes structurally insulated from the said cathode and the anode, are provided exposing to the electron transit path. A cold cathode vacuum tube has an electron emission element having a p-type semiconductor region on an electron emission side and a work function lowering region with junctional relation to the p-type semiconductor region; and a plate electrode structurally insulated from the electron emission element by using an insulation layer which is formed with an electron transmit path corresponding in position to an electron emission area of the electron emission element.

Abstract translation: 一种冷阴极器件，其中冷阴极和阳极彼此面对并具有中间的电子传输路径，以及与所述阴极和阳极结构绝缘的一个或多个控制电极暴露于电子传输路径。 冷阴极真空管具有在电子发射侧具有p型半导体区域的电子发射元件和与p型半导体区域具有连接关系的功函数降低区域; 以及通过使用形成有与电子发射元件的电子发射区域相对应的电子发射路径的绝缘层与电子发射元件结构地绝缘的平板电极。

公开(公告)号：US4736135A

公开(公告)日：1988-04-05

申请号：US875801

申请日：1986-06-18

Applicant: Jan Zwier ,  Johannes H. A. Vasterink ,  Johannes Van Esdonk

Inventor： Jan Zwier ,  Johannes H. A. Vasterink ,  Johannes Van Esdonk

IPC: H01J1/304 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J3/02 ,  H01J1/13 ,  H01J5/02

CPC classification number: H01J1/32 ,  H01J1/308 ,  H01J1/34 ,  H01J3/02 ,  H01J2201/3423

Abstract: In order to improve the stability of a cold cathode (5) of the reverse biased junction type, a vacuum space (2) is coupled with a reservoir (10), within which a source (21) of material reducing the work function, for example caesium, is present. By influencing the vapor pressure and the temperature in component parts (13, 16) of the reservoir (10) and in the source (21), loss of caesium due to adsorption or other phenomena occurring at the emitting surface (8) of the cathode (5) can be compensated for by an incident flow of caesium (25).

Abstract translation: 为了提高反向偏置接合型的冷阴极（5）的稳定性，真空空间（2）与储存器（10）联接，在该储存器内部将减少功函数的材料源（21）用于 例如铯，存在。 通过影响储存器（10）和源（21）的部件（13,16）中的蒸汽压力和温度，由于在阴极的发射表面（8）处发生的吸附或其它现象引起的铯的损失 （5）可以通过铯（25）的入射流补偿。