Charged Particle Beam Device
    52.
    发明公开

    公开(公告)号:US20230343548A1

    公开(公告)日:2023-10-26

    申请号:US18333637

    申请日:2023-06-13

    Inventor: Takuma YAMAMOTO

    CPC classification number: H01J37/222 H01J37/244 H01J37/28

    Abstract: Even when the amount of overlay deviation between patterns located in different layers is large, correct measurement of the amount of overlay deviation is stably performed. The charged particle beam device includes a charged particle beam irradiation unit that irradiates a sample with a charged particle beam, a first detection unit that detects secondary electrons from the sample, a second detection unit that detects backscattered electrons from the sample, and an image processing unit that generates a first image including an image of a first pattern located on the surface of the sample based on an output of the first detection unit, and generates a second image including an image of a second pattern located in a lower layer than the surface of the sample based on an output of the second detection unit. A control unit adjusts the position of a measurement area in the first image based on a first template image for the first image, and adjusts the position of a measurement area in the second image based on a second template image for the second image.

    CHARGED PARTICLE BEAM APPARATUS AND PROCESSOR SYSTEM

    公开(公告)号:US20230335373A1

    公开(公告)日:2023-10-19

    申请号:US18131891

    申请日:2023-04-07

    Abstract: There is provided a technique capable of reducing deterioration of a back scattered electron (BSE) detector caused by a dark pulse. Charged particle beam apparatus includes: a plurality of BSE detectors configured to detect a BSE from a sample; and a controller. The controller acquires, within a period, a first peak time of a first peak included in an output signal from a first BSE detector among the plurality of BSE detectors, and a second peak time of a second peak included in an output signal from a second BSE detector other than the first BSE detector among the plurality of BSE detectors, determines, when the second peak is present where a time difference between the first peak time and the second peak time is within a threshold value, that the first peak is caused by the BSE, and determines, when the second peak is not present where the time difference is within the threshold value, that the first peak is caused by the dark pulse.

    ELECTRON BEAM APPLICATION DEVICE
    55.
    发明公开

    公开(公告)号:US20230335367A1

    公开(公告)日:2023-10-19

    申请号:US18028771

    申请日:2020-11-10

    Abstract: An activation mechanism is provided in an activation region of an electron gun, and includes a light source device 3 configured to irradiate a photocathode with excitation light, a heat generating element, an oxygen generation unit configured to generate oxygen by heating the heat generating element, and an emission current meter configured to monitor an emission current generated by electron emission when the photocathode 1 is irradiated with the excitation light from the light source device. In a surface activation process, the photocathode is irradiated with the excitation light from the light source device, an emission current amount of the photocathode is monitored by the emission current meter, the heat generating element is heated to generate oxygen by the oxygen generation unit, and the heating of the heat generating element is stopped when the emission current amount of the photocathode satisfies a predetermined stop criterion.

    ELECTRON BEAM SYSTEM
    58.
    发明公开

    公开(公告)号:US20230317404A1

    公开(公告)日:2023-10-05

    申请号:US17757133

    申请日:2022-01-26

    Inventor: Shuai LI

    CPC classification number: H01J37/1474 H01J37/10 H01J37/244 H01J37/28

    Abstract: Provided is an electron beam system, including: an electron source, configured to generate an electron beam; a first beam guide, configured to accelerate the electron beam; a second beam guide, configured to accelerate the electron beam; a first control electrode arranged between the first beam guide and the second beam guide, configured to change movement directions of backscattered electrons and secondary electrons generated by the electron beam acting on a specimen to be tested; a first detector arranged between the first beam guide and the first control electrode, configured to receive the backscattered electrons generated by the electron beam acting on the specimen to be tested. The first control electrode according to the embodiments of the present disclosure changes the movement directions of the backscattered electrons and secondary electrons generated by the electron beam generated by the electron source acting on the specimen to be tested, so that the first detector arranged between the first beam guide and the first control electrode can receive pure backscattered electrons generated by the electron beam acting on the specimen to be tested.

    Charged Particle Beam Source and Charged Particle Beam System

    公开(公告)号:US20230317400A1

    公开(公告)日:2023-10-05

    申请号:US18121931

    申请日:2023-03-15

    Applicant: JEOL Ltd.

    CPC classification number: H01J37/067 H01J37/18 H01J37/28

    Abstract: Provided is a charged particle beam source having an emitter that can be replaced easily. The charged particle beam source includes an electron gun chamber; a first unit including both a supportive insulative member mechanically supporting a cable and a first set of terminals electrically connected to the cable; and a second unit including both the emitter that releases charged particles and a second set of terminals electrically connected to the emitter. The chamber has a side wall provided with a through-hole in which the first unit is secured. The second unit can be detachably mounted to the first unit. Within the chamber, the emitter is placed on an optical axis, so that the first and second sets of terminals are brought into contact with each other.

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